Eu-doped indium tin oxide thin films fabricated by sol-gel technique

We have fabricated Eu-doped indium tin oxide thin films via the conventional sol-gel technique, and confirmed that the doped Eu atoms were chemically incorporated into the indium tin oxide lattice by substituting the In sites. Optical spectra indicated that the Eu-doped films were free of any impurities leading to additional vibrational effects. Valence states of Eu ions in our Eu-doped indium tin oxide films were discussed in connection with Eu concentration.     

Nanostructured bulk copper fabricated by accumulative roll bonding

In this study, we tried to fabricate the nanostructured bulk copper alloys by a severe plastic deformation process. The sheets of copper alloys (OFC, PMC90, and DLP) were heavily deformed to an equivalent strain of 6.4 by the accumulative roll-bonding (ARB) process. The microstructure and the mechanical property of the fabricated specimens were systematically investigated. The microstructure was finely subdivided with increasing the equivalent strain by the ARB process. The severely deformed copper alloys exhibited the ultrafine lamellar boundary structure where the mean lamella spacing was about 200 nm. The strength significantly increased with decreasing the lamella spacing in the ARB processed copper alloys. Especially, the tensile strength of the DLP alloys ARB processed by 8 cycles (the equivalent strain of 6.4) reached to 520 MPa, which was about three times higher than that of same materials with conventional grain size of 10-100 microm. On the other hand, the total elongation greatly dropped only by 1 ARB cycle corresponding to an equivalent strain of 0.8, which was around 3%. However, the total elongation increased again with increasing the number of the ARB cycle, and it reached to 10% after 8 cycles. The recovery of the total elongation could be recognized in all studied copper alloys. The obtained stress-strain curves showed that the improvement of the total elongation was caused by the increase in the post-uniform elongation. It can be concluded that the nanostructured copper alloys sheets having high strength without a large loss of ductility could be fabricated by the ARB process.     

Nanostructured thin films of indium oxide nanocrystals confined in alumina matrixes

Nanocrystals of indium oxide (In₂O₃) with sizes below 10 nm were prepared in alumina matrixes by using a co-pulverization method. The used substrates such as borosilicate glasses or (100) silicon as well as the substrate temperatures during the deposition process were modified and their effects characterized on the structural and physical properties of alumina-In₂O₃ films. Complementary investigation methods including X-ray diffraction, optical transmittance in the range 250-1100 nm and transmission electron microscopy were used to analyze the nanostructured films. The crystalline order, morphology and optical responses were monitored as function of the deposition parameters and the post-synthesis annealing. The optimal conditions were found and allow realizing suitable nanostructured films with a major crystalline order of cubic phase for the In₂O₃ nanocrystals. The optical properties of the films were analyzed and the key parameters such as direct and indirect band gaps were evaluated as function of the synthesis conditions and the crystalline quality of the films.     

Preparation of complex oxide thin films under hydrothermal and hydrothermal-electrochemical conditions

Thin-film growth of complex oxides including BaTiO₃, SrTiO₃, BaZrO₃, SrZrO₃, KTaO₃, and KNbO₃ were studied by the hydrothermal and the hydrothermal-electrochemical methods. Hydrothermal-electrochemical growth of ATiO₃ (A = Ba, Sr) thin films was investigated at temperatures from 100° to 200°C using a three-electrode cell. Current efficiency for the film growth was in the range from ca. 0.6% to 3.0%. Tracer experiments revealed that the ATiO₃ film grows at the film/substrate interface. AZrO₃ (A = Ba, Sr) thin films were also prepared on Zr metal substrates by the hydrothermal-electrochemical method. By applying a potential above ca. +2 V vs. Ag/AgCl to the Zr substrates, AZrO₃ thin films were formed uniformly. KMO₃ (M = Ta, Nb) thin films were prepared on Ta metal substrates by the hydrothermal method. Perovskite-type KTaO₃ thin films were formed in 2.0 M KOH at 300°C. Pyrochlore-type K₂Ta₂O₆ thin films were formed at lower temperatures and lower KOH concentrations. Morphotropic phase changes were also revealed in the hydrothermal system KTaO₃-KNbO₃.     

Nanostructured magnetic films of iron oxides fabricated by laser electrodispersion

Nanostructured FeO films with an average nanoparticle size of the order of 6–10 nm were fabricated by laser electrodispersion. Annealing at T = 300°C in vacuum resulted in the disproportionation of FeO particles into Fe₃O₄ and α-Fe, while the films exhibited a marked crystal orientation (texture with the [111] axis). The coercive force and the saturation magnetization of the synthesized nanostructured Fe₃O₄/α-Fe films were as large as ~660 Oe and ~520 emu/cm³, respectively. These values are considerably higher than the corresponding parameters of polycrystalline Fe₃O₄ films.     

Fabrication of copper oxide thin films by the drop chemical deposition technique

Copper oxide thin films were deposited by the drop chemical deposition technique using an aqueous solution containing CuSO₄ and Na₂SO₃. The deposited films were cubic crystalline structure and had O/Cu ratio of ～0.77 with a very small amount of sulfur. The surface morphology of the films appeared compact without any crack. In the optical transmission measurement, a clear absorption edge was observed near 800 nm wavelength. Photo-electrochemical measurement confirmed the p-type conductivity and photosensitivity of the films. Cu_xO-based heterojunctions with ZnO were fabricated, and rectification properties and weak photovoltaic effects were observed.     

Investigation of structural,optical, antibacterial,and dielectric properties of V-doped copper oxide thin films: Comparison with undoped copper oxide thin films

Vanadium doped Copper oxide (CO) thin films were prepared by the sol-gel dip-coating method. The properties of thin films were examined by X-Ray Diffractometer (XRD), UV–Visible-NIR spectrophotometry, and dielectric properties analyzer. The antibacterial and photocatalytic properties were also determined. XRD spectra revealed the dual-phase of copper oxide (cuprite and tenorite) for all percentages of V with no other impurity peak. Tauc's relation is used to probe the optical band gap which is reduced from 1.96 to 1.64 eV with an increase in vanadium doping percentage. The impurity band coalesces with the conduction band of copper oxide to decrease the band gap. Dielectric constant measurements reveal that the Ac conductivity of thin films increases with an increase in V doping percentage.     

Nanocrystalline copper doped zinc oxide produced from copper doped zinc hydroxide nitrate as a layered precursor

Undoped and copper doped nanostructured zinc oxides were synthesized by using a series of synthetic layered material, undoped and copper doped zinc hydroxide nitrates at various molar percentages of copper (2–10) within the layers as precursors. The layered materials were heat-treated at 500 °C to produce zinc oxide nanostructures with crystallite sizes in the range of 23–35 nm. Optical studies of the nanostructured copper doped zinc oxides showed the decrease in band gap with increasing content of the doping agent, copper.     

Nanostructured thin films made by dewetting method of layer-by-layer assembly

Layer-by-layer (LBL) assembly is one of the most ubiquitous coating techniques today. It also offers a pathway for multifunctional/multicomponent materials with molecular-scale control of stratified structures. However, technological applications of LBL are impeded by laborious and fluid-demanding nature of the process. While vertical organization of LBL films is natural for this technique, the control of lateral organization of the films is fairly difficult. Using the deposition of carbon nanotubes (SWNTs) and other nanoscale colloids, we introduce here a new approach to LBL based on dewetting phenomena, d-LBL. Its strengths include: (1) elimination of rinsing steps, (2) significant acceleration of the process, (3) improvement of lateral organization of LBL films, and (4) ability to produce nanostructured coatings from colloids when classical LBL fails. The generality of d-LBL can compete with traditional LBL and is demonstrated for cellulose nanowires, polyelectrolyte pairs, and semiconductor nanoparticles, metal oxides, and Au nanorods.     

Selected-control synthesis of dysprosium hydroxide and oxide nanorods by adjusting hydrothermal temperature

Dysprosium hydroxide and oxide nanorods were prepared directly from commercial bulk Dy₂O₃ crystals by facile hydrothermal process at 130 and 210 °C, respectively. The as-synthesized dysprosium hydroxide and oxide nanorods were investigated by various techniques of XRD, TEM, SEM, and EDS. In the process, the temperature was found to play important roles in determining produce dysprosium hydroxide and oxide nanorods.     

水热法合成Nd(OH)3和Nd2O3纳米棒的形貌控制研究

以工业高纯氧化钕微粉为起始原料,在不使用表面活性剂的情况下通过简单的水热合成法制备出氢氧化钕一维纳米棒,采用X射线衍射仪、扫描电子显微镜和透射电子显微镜对其组成及形貌结构进行了系统表征.研究表明,合成过程中水热体系的反应温度、pH值、反应物初始浓度及反应时间对最终产物的形貌结构具有较大影响,当反应温度为180℃、溶液体系pH值约为9.5、Nd3 浓度为0.12mol/L时,经12h反应可以大量制备形态均一、相纯度高的六方相氢氧化钕晶体纳米棒.该氢氧化钕纳米棒在空气气氛下500℃焙烧后形成具有体心立方结构的C型Nd2O3,该Nd2O3仍具有一维纳米棒形貌.     

离子束溅射生长非晶Si薄膜的研究

用离子束溅射法制备了不同衬底温度的非晶硅(a-Si)薄膜,用双四探针法测量了不同温度下的电阻率,用喇曼散射及原子力显微镜表征了薄膜显微结构.结果发现随着衬底温度的升高,薄膜的电阻率逐渐增大,衬底温度为室温的a-Si薄膜质量较好且从其表面形貌可观察到少量Si晶粒的存在.     

Preparation of transparent conductive indium tin oxide thin films from nanocrystalline indium tin hydroxide by dip-coating method

Indium tin oxide (ITO) thin films with well-controlled layer thickness were produced by dip-coating method. The ITO was synthesized by a sol-gel technique involving the use of aqueous InCl₃, SnCl₄ and NH₃ solutions. To obtain stable sols for thin film preparation, as-prepared Sn-doped indium hydroxide was dialyzed, aged, and dispersed in ethanol. Polyvinylpyrrolidone (PVP) was applied to enhance the stability of the resulting ethanolic sols. The transparent, conductive ITO films on glass substrates were characterized by X-ray diffraction, scanning electron microscopy and UV-Vis spectroscopy. The ITO layer thickness increased linearly during the dipping cycles, which permits excellent controllability of the film thickness in the range ~ 40-1160 nm. After calcination at 550 °C, the initial indium tin hydroxide films were transformed completely to nanocrystalline ITO with cubic and rhombohedral structure. The effects of PVP on the optical, morphological and electrical properties of ITO are discussed.     

铜及其氧化物薄膜对大肠杆菌的强抑制作用

采用直流磁控溅射,靶材为金属铜靶,调节氧气和氩气流量,制备了以石英玻璃为基底颗粒大小在20～50nm之间的Cu和Cu2O纳米薄膜,研究了大肠杆菌与纳米铜系氧化物薄膜的相互作用。通过紫外可见分光光度计,掠入射小角X射线衍射(GIXRD),SEM分别对样品的光学性能、晶体结构、形貌特征进行了研究,发现纳米Cu和Cu2O薄膜均对大肠杆菌具有强抑制作用。在光照下,Cu2O薄膜除了具有金属离子抗菌效应外,光催化抗菌效应表现强烈;Cu薄膜表面有部分被氧化为Cu2O,有助于协同抗菌。     

Photocurrent enhancement of d.c. sputtered copper oxide thin films

Copper oxide (CuO) thin films with photocurrent as high as 25 μA/cm² were deposited on conductive glass substrates using d.c. reactive sputtering. This was the highest reported photocurrent for sputteredp- type copper oxide measured in the electrolyte KI. The photocurrent drastically increased up to 25 (μA/cm² as the sputtering pressure and the substrate temperature were increased up to 8.5 mbar and 192°C, respectively. All the synthesized films contained single phase of CuO in this range of pressure and substrate temperature. Variation of the photocurrent, photovoltage, structure and absorbance with deposition conditions were studied in detail.     

Nickel oxide thin films by spray pyrolysis

The preparative parameters have been optimized for NiO film formation in fabricated Spray Pyrolysis System using pneumatic air pressure driven aerosol formation. The structural studies by X-ray diffractometer (XRD) have been carried out to investigate crystallographic features. It was revealed that NiO crystallizes in cubic bunsenite structure. The optical band gap for direct transitions was found to be equal to 3.67 eV. Field Emission Scanning Electron Micrographs (FESEM) have been employed to study morphological aspects of the prepared films. The elemental depth profiles of film contents have been obtained Auger Electron Spectroscopic (AES) studies.     

Hemocompatibility of lanthanum oxide films fabricated by dual plasma deposition

Lanthanum oxide films were fabricated using dual plasma deposition. X-ray photoelectron spectroscopy (XPS) showed that La existed in the + 3 oxidation state. X-ray diffraction (XRD) revealed a (101) oriented hexagonal structure. Blood platelet adhesion tests and endothelial cell cultures were used to evaluate the hemocompatibility of the as-deposited films. Scanning electron microscopy (SEM) and optical microscopy were employed to evaluate the surface morphology of the blood platelets and endothelial cells on the films. The results showed that the number of adhered, aggregated and morphologically changed platelets was reduced compared to that observed on low-temperature isotropic carbon (LTIC). Endothelial cells culture tests indicated good adhesion and proliferation of human umbilical vein endothelial (HUVE) cells in vitro. Our study suggests that lanthanum oxide films are potential blood-contacting biomedical materials.     

Nanostructured diamondlike carbon thin films for medical applications

Diamondlike carbon (DLC) is an amorphous form of carbon that may contain a high fraction of sp³-hybridized carbon atoms. DLC thin films possess high hardness values, low coefficient of friction values, chemical inertness, and compatibility with human cells. The cardiovascular, orthopedic, ophthalmic, biosensor, and microelectromechanical system (MEMS) device applications for diamondlike carbon thin films are reviewed. Finally, processing of nanostructured diamondlike carbon thin films for medical applications is presented.     

SO1-Gel法硅基PZT铁电薄膜研究

介绍了以硝酸锆、醋本以铅和钛酸四丁酯为原料用溶胶－凝胶（sol-gel）方法在硅衬底上制备Pb（Zr0.53Ti0.47)O3(PZT)铁电膜的工艺流程。对铁电薄膜的表面形貌、晶化程度、界面状态等性质进行了分析,结果表明硅基PZT薄膜形成了良好的钙伏矿结构,并在此基础上实现了制备PZT铁电薄膜的低温改进工艺。