共查询到18条相似文献,搜索用时 248 毫秒
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本文提出一种双包层结构Ge/GeO2介质膜空芯中红外光纤。先采用排布法拉制出包层带有多层空气孔的空芯毛细管,最外层涂有一层硅胶,以加强其机械强度,然后利用化学气相沉积和还原方法在空芯石英毛细管中制备出GeO2-Ge的多层介质反射膜,该膜层提高了Ge/GeO2膜层在短波段的反射效率。经光谱检测分析,该光纤可传输波长为3-12μm,并且中间没有出现大的吸收峰。 相似文献
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提出了一种计算多层介质膜空芯光纤损耗谱特性的方法,理论分析了介质—金属膜结构红外空芯光纤的传输损耗特性.将各层膜的厚度、材料色散和表面粗糙度等特性引入理论计算后,根据实测损耗谱估算了每层介质膜厚度.通过比较实测和理论计算损耗谱,调整优化了工艺参数.采用液相镀膜法,制作了在中红外波长带有低损耗特性的Ag/SiO2/AgI/SiO2三层介质膜结构空芯光纤. 相似文献
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马秀娟 《光纤光缆传输技术》2008,(2):1-3
介绍了利用化学汽相沉积法在毛细石英管内沉积GeO2/Al双层反射膜结构的空芯光纤,并对其进行了性能测试。这种方法增加了内表面膜的反射率,以降低传输损耗。叙述了GeO2/Al空芯光纤传输CO2激光的优点,最后得出结论。 相似文献
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吸收式气敏传感空芯光纤的设计和制备 总被引:3,自引:0,他引:3
研发了红外波段吸收式气敏传感空芯光纤.空芯光纤的内面镀有银膜和介质膜,在目标波长提高反射率从而降低损耗.银膜和介质膜分别采用化学银镜反应法和液相镀膜法成膜.优化介质膜的材料和膜厚.光纤在可见光到中红外波段实现了低损耗特性.空芯光纤不仅可以用作气体传感的光吸收气室,而且也可用作红外光的传输媒介.初步实验结果显示这种空芯光纤可以替代普通的气体吸收气室,实现传感系统小型化. 相似文献
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采用聚碳酸酯毛细管作为红外空芯光纤的基管材料,制作了内直径为320微米的细径红外空芯光纤.内面镀有光滑银膜的聚碳酸酯毛细管,在近红外和中远红外波段获得了平坦的损耗-波长响应特性.用224根镀银聚碳酸酯空芯光纤,制作了长度40mm,截面积约50m2的红外图像光纤束.利用该红外光纤束成功进行了加热电阻丝的红外热图像传输实验.红外聚碳酸酯空芯光纤束具有柔韧性强、无毒等特点,在医疗及工业领域有广阔的应用前景. 相似文献
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文章对传输紫外激光空芯光纤系统进行了研究,利用高斯光束传输规律和波导耦合理
论研究了紫外激光与空芯光纤的耦合,分析了在选定毛细管内镀制选定膜系可以制备传输紫外激光的空芯光纤,并针对空芯光纤内径较大而导致的输出光斑较大的问题,提出使空芯光纤输出端与透镜耦合方案。 相似文献
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Hsiao-Chang Chu Chun Hsiung Chen 《Electromagnetic Compatibility, IEEE Transactions on》1996,38(1):1-6
The plane-wave shielding and reflection properties of a single-layer composite material are analyzed, based on a filament-current phase-correction model that treats the composite material as a lossy periodic structure of fibers situated in a dielectric matrix. The scattering effect of the fibers is dealt with by calculating the scattered fields from the fiber currents, which are assumed to be concentrated along the centers of the fibers. To include the effect of the dielectric matrix, multiple reflection and transmission at the air-matrix interfaces, as well as the phase correction across the fiber grating, are incorporated in the analysis. In this study, only numerical results for the TM case are presented for graphite/epoxy composite materials. In particular, the parameters that influence the shielding and reflection characteristics, such as the angle of incidence and the frequency of the incident wave, the conductivity and radius of the fibers, and the dielectric constant of the matrix, are investigated in detail. Also included are results to illustrate the frequency-selective phenomena associated with composite structures 相似文献
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Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient 总被引:1,自引:0,他引:1
Wet-NO oxidation with or without wet NH/sub 3/ pretreatment is used to grow GeON gate dielectric on Ge substrate. As compared to dry NO oxidation, negligible growth of GeO/sub x/ interlayer and, thus, a near-perfect GeON dielectric can be obtained by the wet-NO oxidation. As a result, MOS capacitors prepared by this method show greatly reduced interface-state and oxide-charge densities and gate-leakage current. This should be attributed to the hydrolyzable property of GeO/sub x/ in water-containing atmosphere. 相似文献
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In this paper, the resonance characteristics of aperture type frequency selective surface (FSS) is presented. A systematic investigation is carried out to design the compact FSS. The optimized structure consists of rectangular Archimedean spiral with inter-digital capacitance. Resonance characteristics is verified in both single-layer as well as the double-layer approach by embedding FSS on one side of the dielectric substrate. The performances of the dual-layer are observed by varying air-gap between two FSS layers. The structure offers satisfactory resonance (transmission and reflection) characteristics at optimum air-gap of 7 mm between two layers with the 3 dB cutoff region over a frequency range (3.66–4.66 GHz). Finally, an array of 31 × 31 FSS elements of two layers is fabricated for experimental characterization. A close agreement between simulated and measured results is observed. 相似文献
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Recently, high-performance flexible pressure sensors have received considerable attention because of their potential application in fitness tracking, human–machine interfaces, and artificial intelligence. Sensitivity is a key parameter that directly affects a sensor's performance; therefore, improving the sensitivity of sensors is a vital research topic. This study developed a dual-layer dielectric structure comprising a layer of electrospun fiber and an array of microcylinders and used it to fabricate a novel high-sensitivity capacitive pressure sensor. A simple, rapid, low-cost, and controllable microstructured method that did not require complex and expensive equipment was adopted. The proposed sensor can efficiently detect capacitance changes by analyzing changes in the fiber and microcylinder structure when compressed. It has high sensitivity of 0.6 kPa−1, rapid response time of 25 ms, ultralow limit of detection of 0.065 Pa, and high durability and high reliability without any signal attenuation up to 10,000 load/unload cycles and up to 5000 bending/unbending cycles. Moreover, it yielded favorable results in real-time tests, such as pulse monitoring, acoustic tests, breathe monitoring, and body motion monitoring. Furthermore, experiments were conducted using a robotic arm, and the obtained results verify that the sensor has different capacitance responses to objects with different shapes, which is crucial for its future applications in smart machinery. Finally, the sensors were arranged as a 6 × 6 matrix, and they successfully displayed the pressure distribution in a plane. Thus, the contributions of the capacitance pressure sensor with a dual-layer dielectric structure in the field of high-performance pressure sensors were verified. 相似文献
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Volatilization of a Ge substrate may generate a large number of impurities inside the gate dielectric of a Ge-based device. Here we use density-functional theory calculations to probe the stability of Ge atoms and GeO molecules inside Al2O3 and Y2O3 high-k oxides. We identify the most stable impurity configurations and we show that both types of extrinsic species generate levels inside the energy band gap of the host systems. We also find that Ge and GeO impurities get trapped at O vacancies and replace the vacancy-related carrier traps with different types of levels in the gap. The results identify atomic-scale mechanisms that underlie gate leakage and charge trapping in Ge-based electronic systems. 相似文献