共烧温度对Pt/YSZ泵氧电极性能的影响

以钇稳定氧化锆(YSZ)为固体电解质,Pt作为电极材料,在不同温度下共烧制备了泵氧电极层原型。借助计时电流法和电化学阻抗谱(EIS)法,并结合SEM分析研究了共烧温度对泵氧电极性能的影响。结果表明,随着共烧温度的增加,泵电流先增大后减小,界面电阻先减小后增大,1 400℃共烧电极三相界面(TPB)最长,活性最强;随着共烧温度的增加,电极反应活化能略微降低。虽然1 400℃共烧电极活化能较1 450℃大,但由于其活性区域大,三相界面长,综合表现为1 400℃共烧电极催化活性最强。     

Pt/YSZ电极结构形貌的表征

根据YSZ型氧传感器中O在电极表面的吸附、扩散以及Pt/YSZ界面O(Pt电极中)/O2(YSZ中)的传递的机理,提出了一种对Pt /YSZ电极界面进行定量表征的模型。用此模型对不同烧结温度下的电极形貌Pt/空气/ YSZ三相界面长度进行了定量表征,同时,采用复阻抗测试技术和氧传感器响应测试技术对表征结果的合理性进行了验证。理论推算和试验结果都表明:采用1 000℃,1 h烧结的电极形貌具有最佳的电化学性能。     

氧化锆氧传感器Ag/Pd电极的表征

采用陶瓷注射成型技术制备了氧化锆固体电解质基体，在烧成的氧化锆基体上涂制Ag/Pd电极浆料，然后将电极在不同温度下烧结。利用扫描电镜（SEM）对所制备的电极表面微观形貌进行表征。结果表明电极烧结温度对电极微观形貌影响很大；利用电化学阻抗（EIS）研究了Ag/Pd电极的电化学性能，显示出Ag/Pd电极优良的电化学催化性能。     

氧化锆氧传感器Ag/Pd电极的表征

采用陶瓷注射成型技术制备了氧化锆固体电解质基体,在烧成的氧化锆基体上涂制Ag/Pd电极浆料,然后将电极在不同温度下烧结。利用扫描电镜(SEM)对所制备的电极表面微观形貌进行表征。结果表明电极烧结温度对电极微观形貌影响很大;利用电化学阻抗(EIS)研究了Ag/Pd电极的电化学性能,显示出Ag/Pd电极优良的电化学催化性能。     

氧化锆氧传感器Ag/Pd电极的表征

采用陶瓷注射成型技术制备了氧化锆固体电解质基体,在烧成的氧化锆基体上涂制Ag/Pd电极浆料,然后将电极在不同温度下烧结.利用扫描电镜(SEM)对所制备的电极表面微观形貌进行表征.结果表明电极烧结温度对电极微观形貌影响很大;利用电化学阻抗(EIS)研究了Ag/Pd电极的电化学性能,显示出Ag/Pd电极优良的电化学催化性能.     

NiO／YSZ凝胶注模工艺流变特性研究

用水基凝胶注法制备同体氧化物燃料电池（SOFC）阳极材料NiO／YSZ是目前的研究热点之一。本文研究了凝胶注模工艺中固相含量、分散剂和pH值对NiO／YSZ陶瓷料浆流变性质的影响。结果表明,Ni0／YSZ水基料浆为假塑性流体;当pH=9、分散剂用量为0．012g／ml、固相含量为45％（体积比）的NiO／YSZ水基料浆,稳定性好,满足浇注成型工艺要求,适合成型SOFC阳极材料NiO／YSZ。     

在GaAs基电注入阴极中的Ti/Pt/Au电极制备工艺研究

制备Ga As基电注入阴极需要在p型Ga As材料上制备周期性分布的金属薄膜电极。实验中,分别采用正性光刻胶AZ5214和负性光刻胶RPN1150作为掩膜层,利用热阻蒸发法和电子束蒸发法在材料表面沉积Ti/Pt/Au薄膜,通过薄膜剥离技术去除多余的金属薄膜,形成基极电极。实验结果表明采用负性光刻胶制备的电极质量更好,正性光刻胶制备的电极边缘粗糙,合理地沉积Ti/Pt/Au薄膜厚度可提高电注入阴极的基极电极质量,从而提升电注入阴极的性能。     

氧化钨pH电化学传感器的H+响应行为研究

采用WO3作为H＋响应敏感材料，制备了WO3pH电化学传感器，对传感器的H^＋响应行为，如响应范围、响应灵敏度、响应时间等影响因素进行了分析。制备WO3工作电极的热处理温度对传感器的H^＋响应灵敏度与速度有影响，H＋响应速度与溶液pH和温度有关，溶液中Na^＋，K^＋，F^-对H＋响应行为没有影响，但是受到I^-，NO3^-的干扰。     

TiOx层在Pt/Ti电极中对Ti扩散的抑制作用

采用直流磁控溅射方法在SiO2/Si衬底上制备出Pt/Ti和Pt/TiOx底电极。用XRD分析其晶相结构,用AFM测量其晶粒尺寸和表面粗糙度。结果表明,用TiOx层代替金属Ti后,能有效地抑制在高温环境下Ti原子向Pt层扩散,使电极表面粗糙度减小(粗糙度为2.99 nm)。     

Cr_2O_3-LSFNiO双敏感电极NO_x传感器响应特性研究

以Cr2O3和(La0.8Sr0.2)2FeNiO6-δ(LsFNiO)为敏感电极材料,经1 200℃烧结制备出了一种具有双敏感电极结构的NOx传感器,并对其气体敏感性进行了测试,最后根据实验结果得出了两敏感电极的电势关于NOx浓度的经验公式。结果表明,两敏感电极的电势均随着NO浓度的增大而减小,NO2浓度的增大而增大。Cr2O3和LsFNiO电极对NO的敏感性分别为–12.198 mV/decade和–16.477 mV/decade,对NO2的敏感性分别为37.083 mV/decade和14.005 mV/decade。两敏感电极的电势与NOx气体浓度的对数呈较好的线性关系。     

Pt／TiO2二极管湿敏传感器

Ｐｔ常被用来在金属氧化物半导体上做肖特基接触，在常温下，Ｐｔ／ＴｉＯ２界面处的电子电导对Ｐｔ／ＴｉＯ２肖特基势垒高度的变化非常敏感，本文描述了利用该性质制造的湿敏传感器的性能，并讨论了因水在Ｐｔ／ＴｉＯ２界面处的化学吸附，引起表面Ｆｅｒｍｉ能级改变，影响Ｐｔ／ＴｉＯ２肖特基势垒的高度，从而导致了Ｉ－Ｖ曲线变化的物理过程，对器件制造过程中的工艺问题所论述。     

Effects of bias-temperature cycling on electrical characteristics of YBCO/YSZ/Si SulS capacitors

A bias-temperature cycling technique is developed in the electrical characterization of YBa₂Cu₃0_7−δ/yttria-stabilized zirconia (YSZ)/Si capacitors. This technique can be used to determine the electrical properties of the material components and their interfaces in the capacitor. Capacitance-voltage (C-V) measurements under no or weak illumination at temperatures ranging from 295 to 80K reveal that hysteresis due to mobile ions decreases with cooling and become vanishingly small at about 220K. Upon further cooling, a different mechanism due to traps in the YSZ/Si interface dominates the low-temperature hysteresis and stretchout of the C-V curves, which is evidenced by measurements for the illuminated device at 80K.     

Pt/CdS Schottky紫外探测器的光电性能研究

制备了Pt/CdS Schottky紫外探测器,对Pt/CdS Schottky紫外芯片对中波红外（3～5μm）的透过率进行了研究,并对器件光电性能进行了测试分析。通过优化 Pt 电极制备条件及对 SiO2增透膜的研究,使Pt/CdS Schottky紫外芯片对中波红外波段的透过率达到85%。室温300 K下,所制备Pt/CdS Schottky紫外探测器在零偏压处的背景光电流为-0.063 nA,在＋6 V时的暗电流密度为7.6×10-7 A/cm2,R0A达到7.2×104?·cm2,其50%截止波长为510 nm。     

常温型Pt/C催化剂的催化氧化试验研究

概述了军用微量CO气体清除设备的发展，介绍了所研制的一种常温型Pt／C催化剂及采用该催化剂设计的CO清除设备，与国内同类设备相比，具有催化剂常温(25℃)活性高、抗背景气体强、抗水能力强、使用寿命长等特点。     

Improvement of the field emission characteristics of an oxidized porous polysilicon using annealed Pt/Ti surface emitter electrode

The field emission characteristics of an oxidized porous polysilicon were investigated with different annealing temperatures. Pt/Ti, Ir, and Au/NiCr were used as surface emitter electrodes, and Pt/Ti emitter showed highly efficient and stable electron emission characteristic compared with the conventional Au/NiCr electrode. Thin Ti layer played an important role in promotion of adhesion of Pt to SiO₂ surface and uniform distribution of electric field on the OPPS surface. Additionally, the Ti layer efficiently blocked the diffusion of emitter metal, which resulted in more reliable emission characteristics. Pt/Ti emitter annealed at 350 °C/1 h showed the highest efficiency of 3.36% at V_ps=16 V, which resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous polysilicon. Annealing above 400 °C showed that Pt/Ti and Ir emitter electrode were thermally more stable than Au/NiCr emitter.     

P型对称LDMOS的静电泄放响应曲线研究与优化

The ESD response characteristic in a p-type symmetric lateral DMOS （ps-LDMOS） has been investigated. The experimental results show that the ps-LDMOS has weak ESD robustness due to an absence of the ＂snapback＂ characteristic. In addition, the location of the hot spot changes little for the special device. The method for reducing the lattice temperature of the hot spot can be used to enhance the ESD capacity of the ps-LDMOS, thereby, a novel and easily-achievable ps-LDMOS structure with a p-type lightly doped drain （p-LDD） has been proposed. The special region p-LDD lowers the electric field at the edge of the poly gate, making the whole dis- tribution of the surface electric field more uniform. Therefore, the ESD robustness is improved two times and no obvious change of other electric parameters is introduced.     

Study on the failure temperature of Ti/Pt/Au and Pt5Si2-Ti/Pt/Au metallization systems

The Ti/Pt/Au metallization system has an advantage of resisting KOH or TMAH solution etching. To form a good ohmic contact, the Ti/Pt/Au metallization system must be alloyed at 400℃. However, the process temperatures of typical MEMS packaging technologies, such as anodic bonding, glass solder bonding and eutectic bonding, generally exceed 400℃. It is puzzling if the Ti/Pt/Au system is destroyed during the subsequent packaging process. In the present work, the resistance of doped polysilicon resistors contacted by the Ti/Pt/Au metallization system that have undergone different temperatures and time are measured. The experimental results show that the ohmic contacts will be destroyed if heated to 500℃. But if a 20 nm Pt film is sputtered on heavily doped polysilicon and alloyed at 700℃ before sputtering Ti/Pt/Au films, the Pt₅Si₂-Ti/Pt/Au metallization system has a higher service temperature of 500℃, which exceeds process temperatures of most typical MEMS packaging technologies.