An integrated active microstrip reflectarray element with an internal amplifier

A new active microstrip reflectarray element (unit cell) with an internal microwave integrated circuit amplifier is introduced. The amplifier resides in a small slot within the footprint of the square patch antenna and is connected between the feed points for the patch's orthogonal polarizations. This element results in reduced array element spacing, reduced transmission line losses through elimination of long feed lines, and a simplified fabrication process compared to other active reflectarray unit cells. Patch geometries with several slot shapes are studied with simulations to arrive at an antenna configuration with good return loss and isolation characteristics. The stability and gain of the system are analyzed over frequency. Measured radiation pattern and gain data for a single element and a small array agree well with predictions and demonstrate the element's capabilities. Limitations of the active element, approaches to mitigate these limitations, and directions for future work are discussed.     

Si-LDMOS high power amplifier RFIC with integrated analogue pre-distorter

A simple approach to improve the linearity of silicon (Si) laterally diffused metal oxide semiconductor (LDMOS) base-station power amplifiers (PAs) by integrating an analogue pre-distorter (APD) is presented. The Si-LDMOS APD utilises an unequal power divider/combiner and Si-LDMOS field effect transistors to provide inverse distortion characteristics. Measurement shows that this method compensates for the nonlinear gain and phase compressions of the PA, thereby resulting in a 1.5 dB increase of the 1 dB compressed output power (P_-1dB).     

L.S.A. microstrip phase-locked power amplifier

A distributed amplifier structure is described using the l.s.a. mode of operation in a microstrip transmission line where gallium arsenide replaces the dielectric. The amplifier gain against frequency is given, and various practical design criteria are discussed.     

双频/GSM 3.6V集成功率放大器

Ｍｏｔｏｒｏｌａ公司的ＭＲＦＩＣ１８５９是一款双频单电源(３．６Ｖ)ＲＦ集成功率大器,专门用于ＧＳＭ９００/ＤＣＳ１８００手持装置。做一些适当的电路变更,它也可以用于三频ＧＳＭ９００/ＤＣＳ１８００/ＰＣＳ１９００设备。其ＧＳＭ/ＤＣＳ典型性能(在３．６Ｖ)是:ＧＳＭ:３５．８ｄＢｍ(５３%ＰＡＥ),ＤＣＳ:３４ｄＢｍ(４３%ＰＡＥ)。     

基于GaN TMIC集成片上天线技术的太赫兹功率放大器

介绍了一种由矩形微带贴片天线和功率放大器一体化集成设计的发射类型单片太赫兹集成电路.该电路采用 GaN HEMT 工艺制备, 实现了高功率密度和高效集成.片上天线被设计为功率放大器输出端接的功率辐射器和频率相关的输出负载调谐器.采用负载牵引技术实现了放大器与天线之间良好的阻抗匹配.在 100~110 GHz的频带范围内, 功率放大器的平均输出功率为 25.2 dBm, 平均功率附加效率（PAE） 为5.83%.单片太赫兹集成电路具有良好的辐射特性, 芯片的10 dB带宽为 1.5 GHz, 在109 GHz估算的等效各向同性辐射功率 （EIRP） 为 25.5 dBm.     

Implementation of a fully integrated 30-dBm RF CMOS linear power amplifier with power combiner

In this paper, a fully integrated 30-dBm UHF band differential power amplifier (PA) with transformer-type combiner is designed and fabricated in a 0.18-μm CMOS technology. For the high power PA design, proposed transformer network and the number of power cells is fully analyzed and optimized to find inductors dimensions. In order to improve both the linear operating range and the power efficiency simultaneously, a parallel combination of the class AB and the class C amplifier in power cells was employed. The PA delivers an output power of 29 dBm and a power-added efficiency of 24% with a power gain of 20 dB, including the losses of the bond-wires.     

Radiation from a microstrip amplifier

A full-wave method is presented to investigate radiation from a microstrip amplifier. The spectral-domain dyadic Green's function, which takes into account both radiation and surface waves, is used to formulate an integral equation. The method of moments is then employed to find the current densities in microstrips and, subsequently, the scattering parameters of the amplifier. The radiated space and surface waves that are launched from the amplifier can be further expressed in terms of the dyadic Green's function and current densities. To verify the numerical results of scattering parameters and far-field radiation patterns, a UHF-band microstrip amplifier matching with single stubs has been implemented and measured. The comparison between simulation and measurement shows excellent agreement.     

使用预失真技术的全集成线性CMOS功率放大器

本文使用了模拟预失真技术设计了用于2.5 GHz的m-WiMAX发射机系统的基于转换器的CMOS功率放大器,功率级和驱动级的三次谐波可以在特定功率范围内相互抵消。使用标准0.18μmCMOS工艺设计的两级功放在1 dB压缩点处的功率为27.5 dBm,功率增加效率为27%。在20.5 dBm的平均功率下可以满足功率谱的要求,EVM为5.5%。测试结果表明,与传统的使用三阶跨导零点偏置技术设计的功放相比,该功放具有良好的线性度和效率。     

A highly linear fully integrated CMOS power amplifier with an analog predistortion technique

A transformer-based CMOS power amplifier（PA） is linearized using an analog predistortion technique for a 2.5-GHz m-WiMAX transmitter.The third harmonic of the power stage and driver stage can be cancelled out in a specific power region.The two-stage PA fabricated in a standard 0.18μm CMOS process delivers 27.5 dBm with 27%PAE at the 1-dB compression point(P_1dB) and offers 21 dB gain.The PA achieves 5.5%EVM and meets the spectrum mask at 20.5 dBm average power.Another conventional PA with a zero-cross-point of g_m3 bias is also fabricated and compared to prove its good linearity and efficiency.     

Fully integrated CMOS power amplifier design using the distributedactive-transformer architecture

A novel on-chip impedance matching and power-combining method, the distributed active transformer is presented. It combines several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while maintaining a 50-Ω match. It also uses virtual ac grounds and magnetic couplings extensively to eliminate the need for any off-chip component, such as tuned bonding wires or external inductors. Furthermore, it desensitizes the operation of the amplifier to the inductance of bonding wires making the design more reproducible. To demonstrate the feasibility of this concept, a 2.4-GHz 2-W 2-V truly fully integrated power amplifier with 50-Ω input and output matching has been fabricated using 0.35-μm CMOS transistors. It achieves a power added efficiency (PAE) of 41 % at this power level. It can also produce 450 mW using a 1-V supply. Harmonic suppression is 64 dBc or better. This new topology makes possible a truly fully integrated watt-level gigahertz range low-voltage CMOS power amplifier for the first time     

一种应用于WiMAX协议的全集成3.5GHzCMOS功率驱动放大器

A fully integrated CMOS differential power amplifier driver(PAD) is proposed for WiMAX applications. In order to fulfill the differential application requirements,a transmission line transformer is used as the output matching network.A differential inductance constitutes an inter-stage matching network.Meanwhile,an on chip balun realizes input matching as well as single-end to differential conversion.The PAD is fabricated in a 0.13μm RFCMOS process.The chip size is 1.1×1.1 mm~2 with all of the matching network integrated on chip. The saturated power is around 10 dBm and power gain is about 12 dB.     

Matched coupled microstrip transistor amplifier methodology

In this paper, we present a generalized methodology for synthesizing narrowband amplifiers in coupled microstrip systems and detail a novel narrowband amplifier in a three-coupled microstrip topology utilizing chip capacitors for matching networks. The purpose of such a configuration is to validate the synthesis of microwave amplifiers in coupled microstrip technology (the ground plane being common to many fabrication technologies) where the planarity inherent to coplanar designs alleviates the need for vias, thereby reducing fabrication cost.     

Coherent operation of 2-D monolithically integrated master oscillator power amplifier

Two dimensional monolithically integrated master oscillator power amplifiers (M-MOPAs) have been fabricated that emit in a single longitudinal mode to an output power of greater than 4.5 W. The spectral output is a single longitudinal mode throughout the operating range and is identical to the output of the master oscillator. The far field radiation pattern transverse to the direction of propagation is characteristic of inphase diffraction limited operation at low output powers.<>     

1 W, coherent, monolithically integrated master oscillator power amplifier

Monolithically integrated master oscillator power amplifiers (M-MOPA) have been fabricated consisting of a single mode distributed Bragg reflector oscillator coupled to a chain of nine single mode amplifiers and detuned second order grating output couplers. The M-MOPA emits in excess of 1 W in a coherent, single longitudinal mode, beam.<>     

Low-harmonic distortion in single-ended and push-pull class E power amplifier by using slotted microstrip lines

In this work, a very low-harmonic distortion with high power-added efficiency (PAE) power amplifier (PA) with slotted microstrip lines is reported. The circuit is a push-pull class E amplifier, terminated with defected structures to improve the spectrum purity and efficiency. The relationship of the second and third harmonic to the fundamental is 70 and 54 dBc, respectively. The amplifier is developed with HBT medium power transistors. The circuit works at 1.8 GHz obtaining a PAE close to 60%, delivering an output power of 24 dBm with a power gain of 13.3 dB.     

A microstrip TRAPATT amplifier for X-band operation

The performance characteristics of pulsed TRAPATT amplifiers in X-band with microstrip RF circuits are described. The amplifiers utilize the second-harmonic extraction technique to produce output powers between 10 and 20 W with efficiencies larger than 10 percent and bandwidths of several hundred megahertz.     

A CPW-fed microstrip patch quasi-optical amplifier array

A quasi-optical power-combining amplifier array based on coplanar waveguide (CPW)-fed microstrip patch antennas is introduced in this paper. Both the transmit and receive antennas employ CPW-fed patches. This amplifier is not only compatible with monolithic-microwave integrated-circuit implementations, but can also provide a greater bandwidth than circuits based on conventional microstrip-fed patch antennas. A 4×4 amplifier array was designed and constructed at X-band. Results for the gain and power compression are also presented