FeS2薄膜厚度对晶体生长及光吸收特性的作用

在单晶Si衬底上用磁控溅射Fe膜并硫化的方法,制备了不同厚度的FeS2薄膜,测定了晶体结构及光学性能.结果表明,薄膜晶体学位向分布随薄膜厚度的增大可发生一定程度的变化.随着薄膜厚度增加到330nm,晶粒尺寸增加而晶格常数减小;但当薄膜厚度大于330nm时,晶粒尺寸下降而晶格常数增大.光吸收系数以及禁带宽度均随薄膜厚度的增加而下降.相变应力、比表面积及晶体缺陷随薄膜厚度的变化是引起薄膜晶体生长行为及光吸收性能变化的主要原因.     

FeS_2薄膜厚度对晶体生长及光吸收特性的作用

在单晶Si衬底上用磁控溅射Fe膜并硫化的方法 ,制备了不同厚度的FeS2 薄膜 ,测定了晶体结构及光学性能 .结果表明 ,薄膜晶体学位向分布随薄膜厚度的增大可发生一定程度的变化 .随着薄膜厚度增加到 330nm ,晶粒尺寸增加而晶格常数减小 ;但当薄膜厚度大于 330nm时 ,晶粒尺寸下降而晶格常数增大 .光吸收系数以及禁带宽度均随薄膜厚度的增加而下降 .相变应力、比表面积及晶体缺陷随薄膜厚度的变化是引起薄膜晶体生长行为及光吸收性能变化的主要原因     

两种形貌FeS2的合成及其在染料敏化太阳能电池上的应用

通过对比FeS2颗粒两种形貌的催化活性及在染料敏化太阳能电池(DSSCs)上的表现,选择出性能更高的FeS2颗粒.通过水热法和热注入法合成了立方体和球状高纯度FeS2,将FeS2制备成对电极(CEs)并组装在DSSCs上.通过测试电池的光电转化效率及对电极的催化活性,发现球状FeS2颗粒有更高的催化活性,基于球状FeS2 CEs的电池也获得了更高的光电转化效率.在100 mW/cm2 (AM 1.5)强度的模拟光源下,基于立方体和球状高纯度FeS2 CEs的DSSCs分别获得了高达4.55％和5.69％的光电转化效率.     

稀土钕离子对立方晶型FeS2结构及光性能的影响

采用真空、无氧退火方法对立方晶型FeS2进行了稀土钕掺杂实验.利用X射线衍射仪和紫外可见分光光度计对样品的结构及光吸收谱进行了研究.利用Rietveld方法对掺杂样品的结构进行了精修.结果显示:由于稀土钕离子的进入,使得立方晶型FeS2晶格结构发生畸变,从而导致样品光电性能改变.     

Electrodeposition of Pyrite Thin Films for Solar Cell

Formation of pyrite (FeS 2) films through electrodeposition from aqueous solutions which contain different source materials has been investigated. Na 2S 2O 3·5H 2O is used as sulfur source material, FeSO 4·7H 2O, FeCl 2·4H 2O and FeCl 3·6H 2O are used as iron source materials respectively. The samples are annealed in N 2 atmosphere at 400 ℃ and 500 ℃ respectively. From XRD (X-ray diffraction) patterns of the films, it is found that there are peaks of FeS 2, FeS and Fe 7S 8 in all films, but there are sharp and more peaks characterizing FeS 2 in the film from Na 2S 2O 3 +FeSO 4 than other films, and 400 ℃ is the more suitable temperature than 500 ℃ for annealing the samples in N 2 atmosphere. In addition, one solution can be used repeatedly.     

热电池薄膜电极制备及其电化学性能

热电池因具有高能量密度、储存寿命长等优点被应用于特殊领域。随着电子设备的小型化,热电池也向着小型化、薄膜化发展。采用涂覆法将正极材料FeS2制备成薄膜材料,并与传统压制成型材料对比。涂覆法制备的材料厚度在120 μm,电流密度为100 mA?cm-2,1 A?cm-2时,放电容量分别高达821 mAh?g-1,528 mAh?g-1,相比传统方法,放电容量增加20%~30%,电池内阻仅有81 mΩ。装配成电池组的电性能更加明显,放电容量较传统提高了153%,同时在重量和体积上都具有明显的优势。     

稀土钕离子对立方晶型FeS2结构及光性能的影响

采用真空、无氧退火方法对立方晶型FeS2进行了稀土钕掺杂实验．利用X射线衍射仪和紫外可见分光光度计对样品的结构及光吸收谱进行了研究．利用Rietveld方法对掺杂样品的结构进行了精修．结果显示：由于稀土钕离子的进入，使得立方晶型FeS2晶格结构发生畸变，从而导致样品光电性能改变     

非制冷热释电薄膜红外探测器热绝缘结构的研制

采用由多孔SiO2薄膜和过渡SiO2薄膜组成的复合薄膜结构实现了非制冷热释电薄膜红外探测器的热绝缘.利用溶胶凝胶方法制备了多孔SiO2薄膜以及过渡SiO2薄膜,通过优化制备工艺,使得多孔SiO2一次成膜厚度达到3070nm,孔率达到59%;过渡SiO2一次成膜的厚度达到188nm,孔率达到4%.AFM表明,由过渡SiO2薄膜与多孔SiO2组成的复合薄膜结构的表面粗糙度远小于多孔SiO2薄膜的表面粗糙度.该热绝缘结构有利于探测器后续各层功能薄膜的集成.     

八羟基喹啉锌非晶薄膜器件的制备和开关特性

介绍了八羟基喹啉锌(Znq2)有机薄膜及器件的制备方法.X射线衍射谱指出,用真空蒸发方法制备的Znq2薄膜呈非晶态结构;通过对Znq2有机薄膜I-Ⅴ曲线的分析,揭示了Znq2薄膜的开关特性.基于分子在电场作用下的空间取向的变化,对这一现象提出了一种可能的理论解释.     

非制冷热释电薄膜红外探测器热绝缘结构的研制

采用由多孔 Si O2 薄膜和过渡 Si O2 薄膜组成的复合薄膜结构实现了非制冷热释电薄膜红外探测器的热绝缘 .利用溶胶凝胶方法制备了多孔 Si O2 薄膜以及过渡 Si O2 薄膜 ,通过优化制备工艺 ,使得多孔 Si O2 一次成膜厚度达到30 70 nm ,孔率达到 5 9% ;过渡 Si O2 一次成膜的厚度达到 1 88nm,孔率达到 4 % .AFM表明 ,由过渡 Si O2 薄膜与多孔Si O2 组成的复合薄膜结构的表面粗糙度远小于多孔 Si O2 薄膜的表面粗糙度 .该热绝缘结构有利于探测器后续各层功能薄膜的集成     

Synthesis of mackinawite FeS thin films from acidic chemical baths

The growth of monophasic iron sulfide thin films onto glass substrates has been achieved by chemical bath deposition at acidic values of pH. Powder X-ray diffraction (p-XRD) confirms the deposition of tetragonal FeS (mackinawite) with preferred orientation along (001) plane. The crystallite size estimated by Scherrer equation was found to be 14 nm. Scanning electron microscopy (SEM) shows the formation of nanoflakes as base layer and nanoflowers as top layer. Energy Dispersive X-ray (EDX) analysis of the deposited iron sulfide thin films shows the iron to sulfur ratio close to 1:1 confirming the deposition of FeS. UV–vis absorption spectroscopy showed a blueshift due to the nanosize crystallites FeS with a band gap of 1.87 eV.     

二氧化钒薄膜在激光防护上的应用研究

战场上激光武器的不断发展对激光防护提出了更高的要求。由于VO2薄膜的相变温度接近室温,具有良好的光电性能,成为相变材料中最有希望用于红外探测器的激光防护材料。介绍了VO2薄膜的光电特性,并探讨了其在激光防护应用方面的相关问题以及发展前景。     

利用制备参数的改变调整VO2薄膜的电阻温度系数

利用真空还原方法,通过合理控制时间和真空退火温度,制备出具有优良热致相变特性的VO2薄膜,并对不同真空还原时间、真空退火温度和衬底条件下制备的VO2薄膜结构和半导体相的电阻温度系数进行了研究。结果表明,不同制备参数对所得薄膜的结构的结构和价态有显著影响,从而对VO2的电阻温度系数产生较大调整。     

Preparation of Photoelectric Material--Pyrite(FeS_2) Thin Film

The preparation methods of simultaneous electro-deposition for pyrite (FeS2) thin film are introduced from aqueous solution of FeSO4 and Na2S2O3. Electrical process is studied in detail in the paper. From the experiment result, the best way of drying the sample is to dry it in vacuum. Electro-deposition method for the preparation of pyrite thin film is a safe, simple and low-cost method.     

不同沉积方式SiO2薄膜的自然时效特性

SiO2薄膜是光学薄膜领域内常用的重要低折射率材料之一。文中采用不同沉积技术在Si基底上制备了SiO2薄膜,并研究了它们光学特性的自然时效特性。采用不同贮存时间的椭偏光谱表征SiO2薄膜的光学特性,随着时间的增加,EB-SiO2薄膜和IAD-SiO2薄膜的物理厚度和光学厚度随着增加,但IBS-SiO2薄膜随着减小,变化率分别为1.0%,2.3%和-0.2%。当贮存时间达到120天时,IBS-SiO2薄膜、EB-SiO2薄膜和IAD-SiO2薄膜的物理厚度和光学厚度趋于稳定。实验结果表明,IBS-SiO2薄膜的光学特性稳定性最好,在最外层保护薄膜选择中,应尽可能选择离子束溅射技术沉积SiO2薄膜。     

Al掺杂半导体Mg2Si薄膜的制备及电学性质

采用磁控溅射方法和热处理工艺在Si衬底上制备了不同Al质量分数的Mg2Si薄膜,研究了不同Al质量分数对Mg2Si薄膜结构及其电学性质的影响.通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和四探针测试仪对Al掺杂Mg2Si薄膜的晶体结构、表面形貌和电学性质进行表征和分析.结果表明:采用磁控溅射技术在Si衬底上成功制备了不同Al质量分数的Mg2Si薄膜,样品表面表现出良好的连续性,在Mg2Si (220)面具有择优生长性.随着质量分数的增加,结晶度先增加后降低,晶粒尺寸减小,且在Al质量分数为1.58％时结晶度最好.此外,样品电阻率也随着Al质量分数的增加逐渐降低,表明Al掺杂后的Mg2Si薄膜具有更好的导电性,这对采用Mg2Si薄膜研制半导体器件有着重要的意义.     

Influence of substrate on the growth of microcrystalline silicon thin films deposited by plasma enhanced chemical vapor deposition

Microcrystalline silicon (μc-Si) thin films are widely used for silicon thin film solar cells, especially in the high performance tandem solar cells which comprise an amorphous silicon junction at the top and a μc-Si junction at the bottom. One of the major factors affecting the photovoltaic properties of μc-Si thin film solar cells of thin films is the quality of the μc-Si thin films. In this work, we investigated the effect of substrates on the crystallization characteristics and growth behaviors of μc-Si thin films grown by the plasma enhanced chemical vapor deposition method (PECVD), and found that substrates have a strong effect on the crystallization characteristics of μc-Si thin films. In addition, the growth rate of μc-Si thin films was also highly influenced by the substrates. Three types of substrates, quartz glass, single crystalline silicon and thermally oxidized single crystalline silicon, were used for growing μc-Si thin films from SiH₄/H₂ with a flow rate ratio 2:98 at different temperatures. Crystallization characteristics of these μc-Si thin films were studied by Raman scattering and X-ray diffraction techniques.     

相变型VO2薄膜的制备及其特性的研究

利用反应离子束溅射和后退火工艺制备一种新的相变型VO2薄膜,对该薄膜进行电学测试、XRD和光学透过率的测试。这种工艺制备出的相变型VO2薄膜相变温度更接近室温,XRD显示这种薄膜中有VO2、V2O5成分的存在。对这种薄膜的光学透过率测试表明,低温下薄膜的透过率是高温下薄膜透过率的近5倍。通过实验可以看出,氧气分压、退火温度、退火时间是影响制备新型相变型VO2薄膜的重要因素。     

Compartmentalized Thin Films with Customized Functionality via Interfacial Cross‐linking of Protein Cages

Hybrid thin films with a high loading and homogeneous dispersion of functional nanoparticles (and/or molecules) find applications in (bio)‐sensors and electronic devices. The fabrication of such hybrid thin films, however, suffers from the complex and diverse surface and physicochemical properties of individual nanoparticles. To address this challenge, a facile and general strategy toward compartmentalized thin films through the interfacial cross‐linking of viral protein cages is reported. Employing these protein cages, gold nanoparticles, as well as enzyme horseradish peroxidase, are encapsulated into virus‐like particles and then cross‐linked into thin films with a thickness varying from monolayer to submicron dimensions. These compartmentalized thin films not only ensure that the cargo is homogeneously dispersed, but also display good catalytic activity. This strategy is, in principle, applicable for a wide range of (bio)‐organic nanocontainers, enabling the versatile fabrication of 2D thin films with extensive application prospects.