一种提高无掩膜光刻机图形质量的方法

针对无掩膜光刻技术在进行大面积图形曝光时会出现曝光质量差,精度低,程序繁等问题,该文提出了一种改善无掩膜光刻机图形质量的方法。通过设置“L”型定位标记将图形尺寸进行精确定位,再通过单场图像格式重命名系统,解决大面积图形切割过程中的乱序问题,最后提出了一种寻找最佳曝光位置的方法,以提高单场图形的曝光质量。该文提出了一种减小大面积图形拼接误差的方法,以提高整体图形的拼接质量;同时还提出了一种二次光刻的对准方法及对准误差校正方法,该方法与已有的套刻方法有区别。通过实验进行验证和分析,结果表明,该方法能有效地提高大面积图形的曝光质量,x、y方向的拼接误差距离均缩小到1 μm内,对准误差精度达到±0.3 μm。该研究为后续的光刻工艺及湿法腐蚀工艺奠定了理论基础。     

一种适用于数字微镜无掩模光刻的图形拼接方法

针对数字投影光刻技术大面积图形曝光的需求,提出了一种基于灰度模板调制的图形拼接方法,包括图形分割、模板设计、子图形灰度调制、子图形曝光4个步骤。图形曝光前,需要将曝光图形分割为多帧大小为1024pixel×768pixel的多个子图形,然后每个子图形与对应模板相乘,实现曝光子图形的预处理。基于数字微镜(DMD)对灰度图形的调制原理,设计了可行的边界灰度调制模板。给出了图形分割的基本方法以及模板设计的原则。计算机仿真实验展示了图形拼接的过程。实验结果表明,该方法能较好地解决大面积图形曝光存在的拼接问题,改善了图形刻蚀的质量。     

同步辐射软X射线曝光工艺研究

本文介绍利用北京正负电子对撞机同步辐射软X射线光刻装置进行亚微米X射线光刻技术和深结构光刻的实验研究。通过对曝光剂量、掩模、抗蚀剂等工艺实验,初步得到适合于目前条件的较好的同步辐射X射线光刻工艺条件,并光刻出0.3μm的亚微米图形和抗蚀剂厚度为36μm深光刻图形。     

GCA3600F图形发生器数据处理技术的改进与应用

为了进一步挖掘传统光学曝光的潜力、扩展其应用范围、提高其曝光效率,对GCA3600F光学图形发生器数据处理技术开展了研究,其中包括对曝光数据的优化处理技术以及复杂图形切割算法的研究,并编制了相应的软件补偿程序.结果表明,该技术可有效提高光学图形发生器曝光效率,减少机器设备的磨损,提高光刻掩模版的精度.     

全电子束光刻制造二维光子晶体波导器件解决方案

以光子晶体Fabry-Perot腔为例,提出了全电子束光刻制作光子晶体波导器件的解决方案.曝光光子晶体区域时采用较小的曝光步长,同时引入额外的邻近效应补偿本征邻近效应,从而获得高质量的掩模图形.曝光较长的输入、输出波导时,采用较大的曝光步长以提高电子束扫描速度,同时在波导的写场(write-field)过渡区引入一个锥形波导以减小写场拼接误差对光传输效率的影响.实验结果证明,这种方法既能保持小孔制作需要的高精度,也能很大程度上提高光刻效率.     

全电子束光刻制造二维光子晶体波导器件解决方案

以光子晶体Fabry-Perot腔为例,提出了全电子束光刻制作光子晶体波导器件的解决方案.曝光光子晶体区域时采用较小的曝光步长,同时引入额外的邻近效应补偿本征邻近效应,从而获得高质量的掩模图形.曝光较长的输入、输出波导时,采用较大的曝光步长以提高电子束扫描速度,同时在波导的写场(write-field)过渡区引入一个锥形波导以减小写场拼接误差对光传输效率的影响.实验结果证明,这种方法既能保持小孔制作需要的高精度,也能很大程度上提高光刻效率.     

An All-E-Beam Lithography Process for the Patterningof 2D Photonic Crystal Waveguide Devices

以光子晶体Fabry-Perot腔为例，提出了全电子束光刻制作光子晶体波导器件的解决方案. 曝光光子晶体区域时采用较小的曝光步长，同时引入额外的邻近效应补偿本征邻近效应，从而获得高质量的掩模图形. 曝光较长的输入、输出波导时，采用较大的曝光步长以提高电子束扫描速度，同时在波导的写场（write-field）过渡区引入一个锥形波导以减小写场拼接误差对光传输效率的影响. 实验结果证明，这种方法既能保持小孔制作需要的高精度，也能很大程度上提高光刻效率.     

X射线微缩投影光刻技术

作为将来0.1μm投影光刻技术,探讨了X射线缩小投影曝光方法,该技术是在软X射线领域中,在缩小光学系统的反射镜面上形成的反射的多层膜,可作为大面积曝光实用的光学系统,并进行试制评价,非球面加工精度大致要满足0.1μm才能获得其性能,通过该光学系统的曝光实验确认可在20×0.4mm范围中构成尺寸为0.15μm图形     

大面积高分辨率光刻技术研究

以NSR1755i7A型投影曝光机为基础,分析了影响大面积精细光刻图形分辨率的主要因素。利用表面平坦化技术、BARC工艺技术和PEB工艺技术,解决了高分辨率和聚焦深度的矛盾,消除了曝光过程中出现的表面反射和因驻波造成曝光图形边缘罗纹状的现象,实现了大面积（17．5mm×17．5mm）、高长宽比（160）、高密集（占空比36％）、高分辨率亚微米（0．5um）精细线条光刻。同时提出了采用两次曝光技术在NSR1755i7A型投影曝光机上实现了厚胶高分辨率图形的制作。     

0.3微米移相掩模光刻

用移相掩模提高i线步进曝光的分辨率,这是本文讨论的问题。文中研究了重复线条,也研究了孤立线和孔状图形。为在光刻孤立窗口时,得到窄细亮线,在掩模主体狭缝的两侧附加辅助狭缝。辅助狭缝的宽度小于镜头的临界值。主体狭缝与辅助狭缝的光相位相反。辅助狭缝的作用在于减小亮线的宽度,使其小于镜头的线扩展函数值。主体狭缝及周围的四个辅助狭缝,也同样适用于小孔图形光刻。文中对移相掩模和普通掩模在片子上的光强分布进行了计算对比,并用额定分辨率为0.55μm的i线步进曝光机,将图形制作在片子上。用移相掩模光刻,0.3μm线条/间隔、0.3μm孤立窗口及0.4μm孔图形都可以分辨。而用普通掩模光刻,其图形不能分辨。对辅助狭缝光相位的变化作用,本文也进行了讨论。光强计算及实验结果表明,改变狭缝的光相位,能够控制最佳聚焦位置。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks