基于湿法腐蚀工艺的高性能黑硅光电探测器

采用基于硝酸/氢氟酸/磷酸/硫酸混合液的湿法腐蚀工艺,实现了高吸收效率的黑硅结构的制备与工艺集成,获得了具有近红外响应增强效果的黑硅PIN光电探测器,并与未集成黑硅的PIN光电探测器的性能参数进行了对比测试.测试结果显示,黑硅光电探测器在1 060 nm波长下的响应度达到0.69 A/W(量子效率80.7％),较未集成黑硅的器件提高了 116％;黑硅探测器暗电流小于8 nA,响应时间小于8 ns,电容小于9 pF,与未集成黑硅的器件相当.得益于工艺兼容性,所采用的黑硅技术具有广泛应用于硅基近红外PIN,APD,SPAD,SPM等光电探测器的潜力,可显著提高器件的响应率、量子效率、响应速度、击穿电压温度系数等性能.     

硅光电二极管的新发展

1.硅光电二极管的新发展在各种波长(蓝、近紫外)激光器迅速发展情况下,探测这些波长的激光硅光电二极管有了新的发展。蓝、近紫外激光的新应用是,用可调染料激光器进行吸收研究,对于有机分子键的分解和激光多普勒测速。 2.新产品性能新型的硅光电二极管是通过平面扩散、氧钝化制备的,响应率改进了20％～57％。美国联合探测器技术公司目前已进入试生产。表1是该公司生产的硅光电二极管样品的预计性能,从蓝光到近紫外的激光波长有     

光敏二极管的可靠性和寿命分析

在大量实验的基础上,通过理论分析和数据处理,采用威布尔概率纸图估法,评估了为某种设备的特殊需要生产的一种新型硅光电探测器的可靠性和寿命。在正常工作条件(300K)时,器件的平均寿命为1.04×108h;在40℃时,器件的失效率等级达到国家标准规定6级。详细分析了光敏二极管的失效模式及失效机理,提出了提高光敏二极管的可靠性和寿命的措施。     

1 550 nm升频单光子探测器的特性分析

分析了一种工作波长为1550 nm,利用铌酸锂周期极化波导和硅雪崩二极管构成的升频单光子探测器的性能,给出了应用这种探测器的理想通信系统的结构组成,讨论了升频单光子探测器主要参数:量子效率和暗记数及其与泵浦功率的关系.通过比较得出升频探测器优于传统的InGaAs/InP雪崩二极管单光子探测器,能很好地改善量子通信系统的性能.     

一种新型的微流体测量芯片的设计

介绍了一种新型的集成反熔丝和光敏二极管的微流体测量芯片的设计。将反熔丝发光二极管及光敏接收二极管集成到微流体装置可以通过结合集成电路技术和微加工技术来实现。这种新型的微流体芯片包括一个光敏二极管探测器,硅微通道和一个纳米级的反熔丝发光二极管。还介绍了反熔丝发光二极管的结构及工作原理、芯片的结构和制作方法、芯片的应用及其应用仿真。该芯片结合外流路装置可以检测流体的流速、通道中流体的吸收率、通道中流体在某介质中的折射参数以及液体中的气泡、微粒等。     

激光对光电探测器的损伤阈值研究

本文研究了1.06μm和0.53μm激光对硅pin光电二极管以及硅雪崩光电管的永久性损伤效应,测出了损伤阈值。实验发现,光电探测器的PN结受到激光热烧伤是造成其永久性损伤的重要因素,损伤阈值的大小与激光波长、脉冲宽度以及光电探测器结构有关。     

光通信用的硅基长波长光电探测器

硅基长波长光电探测器是最有希望与微电子集成的一种用于光通信的光电器件。介绍了当前硅基长波长光电探测器的发展现状和趋势,讨论了提高硅基长波长光电探测器性能的途径。     

网格敏感区硅光探测器

研究了网格结构硅光敏二极管，在这种结构中，网格条区为ＰＮ结区，网格孔区为高电阻率衬底材料区。在反向工作电压作用下，网孔区将被耗尽，成为ＰＮ结与表面耗尽区结构统一的光探测器。测量表明，这种结构的器件是一种高响应度、宽光谱范围的光探测器件。     

硅PIN光电探测器

利用成熟的半导体平面工艺,采用高阻硅(Si)单晶,我们已成功地制造了四种光电探测器。1.单个的 Si—PIN 光电二极管2.Si 象限探测器3.Si 光电压探测器4.其它光电二极管列阵     

1.3μm高速PIN光电二极管

综合考虑高速光电探测器的频率特性和响应度,优化设计了GaInAs／InPPIN光电二极管的结构参数,解决了长波长高速光电探测器制作中的关键技术,如高纯、超薄GaInAs／InP材料的液相外延生长、有源区的浅结扩散技术、为降低器件漏电采用的双层钝化膜技术和小光敏面的光耦合技术等,并采用同轴封装结构实现了高速光电探测器的高频封装。研制的GaInAs／InPPIN高速长波长光电探测器的3dB带宽达到20GHz,响应度为0．7A／W,暗电流小于5nA。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.