高场发射性能碳纳米管薄膜的沉积与表征

利用电泳法将碳纳米管（CNTs）沉积在表面镀覆了50～150 nm Ti薄膜的Si基底表面,900℃真空退火后形成了具有良好场发射性能的Ti-CNTs薄膜阴极.利用X射线衍射和扫描电子显微镜对制备的Ti-CNTs薄膜进行了表征.结果表明,高温退火过程中,CNTs的C原子和基底表面的Ti原子发生化学反应,在CNTs与基底之间形成了导电性钛碳化物,明显改善了CNTs与基底之间的电导性和附着力等界面接触性能;与Si基底表面直接电泳沉积的CNTs薄膜相比,制备的Ti-CNTs薄膜的开启电场从1.31 V/μm降低到1.19 V/μm;当电场强度为2.50 V/μm时,Ti-CNTs薄膜的场发射电流密度可达13.91 mA/cm^2;制备的Ti-CNTs薄膜显示出改善的发射稳定性.     

链状碳纳米管薄膜的制备及场发射特性研究

以镀有Ti层的Al2O3为衬底,在微波等离子体化学气相沉积系统中,以CH4和H2为反应气体,快速制备了链状碳纳米管薄膜(沉积时间仅1 min).通过SEM、TEM和Raman光谱观察了薄膜的表面形貌,分析了薄膜的微观结构.在高真空室中测试了薄膜场发射特性,其开启电场为0.81 V/μm,在3.15 V/μm 电场下,其场发射电流密度达到9 mA/cm2,发射稳定,是一种良好的电子发射体.     

类金刚石薄膜作为阴极阵列的场发射显示器研制

采用真空磁过滤弧沉积（FAD）的方法制备的金刚石（DLC）薄膜具有良好的场发射性能。通过离子束技术和微细加工技术可以实现DLC薄膜的图形化并能大大提高薄膜的场发射性能。测试表明，DLC薄膜孔洞阵列具有很好的电子场发射性能，阈值电场达到了2.1V/μm，当场强为14.3V/μm时，电流密度达到了1.23mA/cm^2。利用图形化的DLC薄膜作为阴极，设计和制作了矩阵选址单色场发射显示器（FED）样管。     

金刚石微米聚晶结构的生长及其场发射特性研究

在覆盖金属钛层的陶瓷上,利用微波等离子体化学气相沉积(MPCVD)法制备出类球状微米金刚石聚晶薄膜.利用扫描电子显微镜、拉曼光谱、X射线衍射,分析了薄膜的结构和表面形貌.测试了类球状微米金刚石聚晶膜的场致电子发射特性.开启电场仅为0.55V/μm,在2.18V/μm的电场下,其场发射电、流密度高达11mA/cm2.对类球状微米金刚石聚晶阵列形成机理和场发射机理进行了研究.     

非晶碳／Mo2C混合膜的场发射特性

以镀有Mo过渡层的Al2O3衬底，在微波等离子体增强化学气相沉积（MPCVD）系统中．制备了非晶碳／Mo2C混合结构薄膜．反应气体为CH4和H2。在高真空室中测量了样品场发射特性。开启场强为0．55V／μm，在18V/μm电场下样品的发射电流密度为6．8mA／cm^2。发射点点密度〉10^3／cm^2。用SEM观察了表面形貌．Raman和XRD谱分析了薄膜的微观结构和成分。实验结果表明该薄膜是一种好的场致电子发射体。     

金/硅纳米孔柱阵列的场发射

利用浸溃技术在硅纳米孔柱阵列(silicon nanoporous pillar array(简称Si-NPA))上制备了复合纳米薄膜Au/Si-NPA.测试了其场发射性能.测试结果显示,Au/Si-NPA的开启电场为约2V/μm;在7.59V/μm的外加电场下,其发射电流密度为67μA/cm2;在外加电压2000V时,其电流浮动率为21%.导致Au/Si-NPA优良的发射性能是由于其独特的表面形貌和结构所致.     

基底预处理对非晶碳/Mo_2C复合薄膜场发射性能的影响

利用微波等离子体增强化学气相沉积(MPECVD)技术在镀有过渡层金属Mo的Al2O3陶瓷基底上制备了非晶碳/Mo2C复合薄膜,研究了基底预处理对所制备薄膜的场发射特性的影响。结果表明,在同一条件下利用金刚砂研磨处理的样品具有比较好的场发射特性,利用W20金刚砂处理后制备的样品具有最好的场发射特性,其开启电场低(0.74 V/μm),同一电场(2.59 V/μm)下场发射电流密度最大(12.7 A/cm2)而且发光点分布均匀。     

碳纳米管薄膜的低温制备及其场发射性能的研究

利用电镀方法在覆盖有金属Ti的玻璃衬底上制备了Ni催化剂,采用微波等离子体化学气相沉积技术,以CH4和H2为反应气体,在450℃的低温下制备了CNTs薄膜.利用扫描电子显微镜和Raman光谱对其表面形貌和结构进行了分析,在真空度小于2×10-4 Pa的环境中测试了CNTs薄膜的场致电子发射特性,开启电场2.7 V/μm.研究表明微波等离子体化学气相沉积技术低温制备CNTs薄膜是可行的,且该薄膜具有良好的场发射性能.     

纳米金刚石掺混对碳纳米管薄膜场发射性能的影响

为了提高碳纳米管（CNT）阴极膜的场发射均匀性和稳定性,同时改善CNT膜的制作过程,本文提出一种掺混纳米金刚石（D）制作高性能丝网印刷CNT膜的方法．通过掺混碳相纳米金刚石,形成结构匹配的CNT／D复合膜,CNT膜内的间隙势垒减少,发射体分散更均匀,膜层与基底接触面积增加;同时,结合纳米金刚石的负电亲和势和场发射特性,可有效提高CNT阴极膜的导电性,增大有效发射体的密度．场发射特性测试表明CNT／D复合膜能得到1．89V／μm的低开启电场,在2．8V／μm场强下,场发射电流密度远高于普通CNT膜,达到463μA／cm2,与普通CNT阴极膜相比,CNT／D复合膜的场发射稳定性显著提高,在400℃热处理后CNT／D膜激发阳极发光更均匀．     

微图形定向碳纳米管场发射阵列冷阴极的研究

本文介绍了一种微图形化碳纳米管场发射阵列冷阴极,每个图形的直径仅为1μm,构成一个发射单元。制作工艺如下：首先在硅（100）基片上沉积氮化钛缓冲层,然后采用曝光工艺获得直径为1μm的胶孔阵列,沉积催化剂铁,最后采用直流等离子体增强化学气相沉积（DC-PECVD）生长直立的碳纳米管。并对17500个发射单元的阵列阴极进行了表面形貌表征及场发射特性测试。结果表明,碳纳米管阵列阴极的一致性较好;最低开启电场为1 V/μm;电场为17 V/μm时,测得的电流密度已达到90 mA/cm^2;发射电流为550μA时,在2.5 h内的波动小于5.6%。     

Enhanced field emission from ZnO nanoneedles on chemical vapour deposited diamond films

ZnO nanoneedles were coated on hot filament chemical vapour deposited diamond thin films to enhance the field emission properties of ZnO nanoneedles. The virgin diamond films and ZnO nanoneedles on diamond films were characterized using scanning electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. The field emission studies reveal that the ZnO nanoneedles coated on diamond film exhibit better emission characteristics, with minimum threshold field (required to draw a current density ~ 1 μA/cm²) as compared to ZnO needles on silicon and virgin diamond films. The better emission characteristic of ZnO nanoneedles on diamond film is attributed to the high field-enhancement factor resulting due to the combined effect of the ZnO nanoneedles and diamond film.     

UNCD electron emitters using Si nanostructure as a template

The electron field emission (EFE) properties of silicon nanostructures (SiNSs) coated with ultra-nanocrystalline diamond (UNCD) were characterized. The SiNS, comprising cauliflower-like grainy structure and nanorods, was generated by reaction of a Si substrate with an Au film at 1000 °C, and used as templates to grow UNCD. The UNCD films were deposited by microwave plasma-enhanced chemical vapour deposition (MPECVD) using methane and argon as reaction gases. The UNCD films can be grown on the SiNS with or without ultrasonication pretreatment with diamond particles. The EFE properties of the SiNS were improved by adding an UNCD film. The turn-on field (E₀) decreased from 17.6 V/μm for the SiNS to 15.2 V/μm for the UNCD/SiNS, and the emission current density increased from 0.095 to 3.8 mA/cm² at an electric field of 40 V/μm. Ultrasonication pretreatments of SiNS with diamond particles varied the structure and EFE properties of the UNCD/SiNS. It is shown that the ultrasonication pretreatment degraded the field emission properties of the UNCD/SiNS in this study.     

CVD金刚石膜的场发射机制

利用热灯丝化学气相沉积方法在光滑的钼上沉积了金刚石膜,用扫描电子显微镜和Raman谱对金刚石膜进行了分析。结果表明金刚石膜是由许多金刚石晶粒组成,晶粒间界主要是石墨相,并且在膜内有许多缺陷。金刚石膜的场发射结果表明高浓度CH4形成的金刚石膜场发射阈位电场较低浓度CH4形成的金刚石为低。这意味着杂质（如石墨）和缺陷（悬挂键）极大地影响了膜的场发射性能。根据以上结果,提出了一种CVD金刚石膜的场发射机制即膜内的缺陷增强膜内的电场,石墨增大电子的隧穿系数以增强CVD金刚石膜的场发射。     

Interfacial reaction and electrical properties of HfO2 film gate dielectric prepared by pulsed laser deposition in nitrogen: role of rapid thermal annealing and gate electrode

The high-k dielectric HfO(2) thin films were deposited by pulsed laser deposition in nitrogen atmosphere. Rapid thermal annealing effect on film surface roughness, structure and electrical properties of HfO(2) film was investigated. The mechanism of interfacial reaction and the annealing atmosphere effect on the interfacial layer thickness were discussed. The sample annealed in nitrogen shows an amorphous dominated structure and the lowest leakage current density. Capacitors with high-k HfO(2) film as gate dielectric were fabricated, using Pt, Au, and Ti as the top gate electrode whereas Pt constitutes the bottom side electrode. At the gate injection case, the Pt- and Au-gated metal oxide semiconductor devices present a lower leakage current than that of the Ti-gated device, as well as similar leakage current conduction mechanism and interfacial properties at the metal/HfO(2) interface, because of their close work function and chemical properties.     

电泳沉积碳纳米管的微波等离子体改性

采用电泳法在Si基底上沉积了碳纳米管(CNTs)薄膜, 并利用Ar微波等离子体对CNTs薄膜进行了改性处理, 研究了改性前后CNTs的微观结构和场发射性能. 高分辨透射电子显微镜(HRTEM)和拉曼光谱的表征结果表明, 等离子体改性明显改变了CNTs的微观结构, 形成了大量的管壁结构缺陷、纳米级突起和“针形”尖端; 场发射测试结果表明, CNTs经Ar等离子体改性处理后开启电场较改性前?略有增大, 等离子体改性10min的CNTs薄膜表现出最佳的场发射J-E特性, 阈值电场由改性前的3.12V/μm降低到2.54V/μm, 当电场强度为3.3V/μm时, 场发射电流密度由改性前的18.4mA/cm²增大到60.7mA/cm². 对Ar微波等离子体改性增强CNTs薄膜场发射性能的机理进行了分析.     

Fabrication of multi-emitter array of CNT for enhancement of current density

We studied and compared field emission properties of two kinds of emitters of randomly oriented multi-wall carbon nanotubes (MWNTs), viz. continuous film emitter (CFE) and multi-emitter array (MEA). The CFE has a continuous film of MWNTs while the MEA consists of many equidistant small circular emitters. Both types of emitters were prepared by dispersing MWNTs over a titanium (Ti) film (for CFEs) or Ti circular islands (for MEAs) deposited on tantalum (Ta) followed by rooting of MWNTs into the Ti film or the Ti islands at high temperature. Emission properties of both types of emitters were analyzed with changing their emission areas. In case of the CFEs, current density decreased with an increase in emission area whereas consistent current densities were achieved from MEAs with different emission areas. In other words, the total emission current was achieved in proportion to the emission area in the case of MEAs. Additionally a high current density of 22 A/cm² was achieved at an electric field of 8 V/μm from MEAs, which was far better than that obtained from CFEs. The high current density in MEAs was attributed to edge effect, in which higher emission current is achieved from the edge of film emitter. The results indicate that the field emission characteristics can be greatly improved if a cathode contains many small equidistant circular emitters instead of a continuous film. The outstanding stability of the CFE and the MEA has been demonstrated for 2100 and 1007 h, respectively.     

The effects of substrate and annealing on structural and electrochemical properties in LiCoO2 thin films prepared by DC magnetron sputtering

LiCoO2 thin films were fabricated by direct current magnetron sputtering method on STS304 and Ti substrates. The effects of substrate and annealing on their structural and electrochemical properties of LiCoO2 thin film cathode were studied. Crystal structures and surface morphologies of the deposited films were investigated by X-ray diffraction and field emission scanning electron microscopy. The as-deposited films on both substrates have amorphous structure. The (104) oriented perfect crystallization was obtained by annealing over 600 degrees C in STS304 substrate. The LiCoO2 thin film deposited on Ti substrate shows the (003) texture after annealing at 700 degrees C. The electrochemical properties were investigated by the cyclic voltammetry and charge-discharge measurement. The 600 degrees C-annealed LiCoO2 film deposited on STS304 substrate exhibits the inithial discharge capacity of 22 uAh/cm2 and the 96% capacity retention rate at 50th cycles. The electrochemical measurement on annealed films over 600 degrees C was impossible due to the formed TiO2 insulator layer using Ti substrate. As a result, it was found that the STS304 substrate seems to be more suitable material than the Ti substrate in fabricating LiCoO2 thin film cathode.     

Growth behavior of CVD diamond films with enhanced electron field emission properties over a wide range of experimental parameters

In this study, diamond films were synthesized on silicon substrates by microwave plasma enhanced chemical vapor deposition (CVD) over a wide range of experimental parameters. The effects of the microwave power, CH₄/H₂ ratio and gas pressure on the morphology, growth rate, composition, and quality of diamond films were investigated by means of scanning electron microscope (SEM), X-ray diffraction (XRD), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS). A rise of microwave power can lead to an increasing pyrolysis of hydrogen and methane, so that the microcrystalline diamond film could be synthesized at low CH₄/H₂ levels. Gas pressure has similar effect in changing the morphology of diamond films, and high gas pressure also results in dramatically increased grain size. However, diamond film is deteriorated at high CH₄/H₂ ratio due to the abundant graphite content including in the films. Under an extreme condition of high microwave power of 10 kW and high CH₄ concentration, a hybrid film composed of diamond/graphite was successfully formed in the absence of N₂ or Ar, which is different from other reports. This composite structure has an excellent measured sheet resistance of 10–100 Ω/Sqr. which allows it to be utilized as field electron emitter. The diamond/graphite hybrid nanostructure displays excellent electron field emission (EFE) properties with a low turn-on field of 2.17 V/μm and β = 3160, therefore it could be a promising alternative in field emission applications.     

Field emission studies of CVD diamond thin films: effect of acid treatment

Field emission from CVD diamond thin films deposited on silicon substrate has been studied. The diamond films were synthesized using hot filament chemical vapor deposition technique. Field emission studies of as-deposited and acid-treated films were carried out using ‘diode’ configuration in an all metal UHV chamber. Upon acid treatment, the field emission current is found to decrease by two orders of magnitude with increase in the turn-on voltage by 30%. This has been attributed to the removal of sp² content present in the film due to acid etching. Raman spectra of both the as-deposited and acid-treated films exhibit identical spectral features, a well-defined peak at 1333 cm⁻¹ and a broad hump around 1550 cm⁻¹, signatures of diamond (sp³ phase) and graphite (sp² phase), respectively. However upon acid treatment, the ratio (I_d/I_g) is observed to decrease which supports the speculation of removal of sp² content from the film. The surface roughness was studied using atomic force microscopy (AFM). The AFM images indicate increase in the number of protrusions with slight enhancement in overall surface roughness after acid etching. The degradation of field emission current despite an increase in film surface roughness upon acid treatment implies that the sp² content plays significant role in field emission characteristics of CVD diamond films.