Enhanced microstructure and electrical properties of Mn-modified Bi0.5(Na0.65K0.35)0.5TiO3 ferroelectric ceramics

Bi_0.5(Na_0.65K_0.35)_0.5TiO₃ (BNKT) and Mn-modified Bi_0.5(Na_0.65K_0.35)_0.5(Mn_xTi_1−x)O₃ (BNKMT-10³x), (x=0.0–0.5%) ferroelectric ceramics were synthesized by solid-state reaction method. Optimization of calcination temperature in Mn-doped ceramics was carried out for the removal of secondary phases observed in XRD analysis. BNKMT ceramics sintered at 1090 °C showed enhanced dielectric, piezoelectric and ferroelectric properties in comparison to pure BNKT. The average grain size was found to increase from 0.35 μm in BNKT to 0.52 μm in Bi_0.5(Na_0.65K_0.35)_0.5(Mn_0.0025Ti_0.9975)O₃ (BNKMT-2.5) ceramics. The dielectric permittivity maximum temperature (T_m) was increased to a maximum of 345 °C with Mn-modification. AC conductivity analysis was performed as a function of temperature and frequency to investigate the conduction behavior and determine activation energies. Significant high value of piezoelectric charge coefficient (d₃₃=176 pC/N) was achieved in BNKMT 2.5 ceramics. Improved temperature stability of ferroelectric behavior was observed in the temperature dependent P–E hysteresis loops as a result of Mn-incorporation. The fatigue free nature along with enhanced dielectric and ferroelectric properties make BNKMT-2.5 ceramic a promising candidate for replacing lead based ceramics in device applications.     

Dielectric and piezoelectric properties of lead-free (K0.44Na0.46)NbO3-0.5%MnO2 single crystals grown by the TSSG method

Lead-free (K_0.44Na_0.46)NbO₃-0.5%MnO₂ (KNN-0.5%MnO₂) single crystals with dimensions of Ф30×10 mm were successfully grown by a top seeded solution growth technique (TSSG). The X-ray diffraction pattern has shown that the as-grown crystals have an orthorhombic perovskite structure. The orthorhombic-tetragonal (T_O-T) and tetragonal-cubic phase transition temperature (the Curie temperature T_C) of the single crystal were found at 184 °C and 412 °C, respectively. The KNN-0.5%MnO₂ single crystals exhibited high piezoelectric constants d₃₃ and dielectric permittivity ε_r, being 261 pC/N and 275. Well saturated P-E hysteresis loop with remnant polarization P_r=22.06 µC/cm² and coercive field E_c=17.93 kV/cm was obtained at a maximum electric field of 3 kV/mm. A high strain (0.24%) and electromechanical coupling coefficient K_t (65.9%) were obtained along the (001) orientation. These excellent results indicated that the KNN-0.5%MnO₂ single crystals could be used as high quality lead-free material.     

High-temperature dielectric and relaxation behavior of Yb-doped Bi0.5Na0.5TiO3 ceramics

Microstructure, phase transition and dielectric properties of Yb-doped Bi_0.5Na_0.5TiO₃ (BNT) ceramics were investigated. It is found that ytterbium promotes the grain growth and densification of the ceramics while Ti-rich impurity appears due to the compensation of Ti-vacancy. The dielectric operational temperature range of the ceramics with a±15% tolerance was greatly broaden until 500 °C by ytterbium doping. Meanwhile, the diffuseness of the diffuse phase transition increases with the increase of doping Yb. BNT ceramics with 3 mol% Yb doping shows a near-plateau dielectric behavior in a broad temperature range from 147 to 528 °C and a low dielectric loss (<0.025) from 154 to 356 °C, indicating that it is a promising material for applications in high-temperature capacitor.     

Duplex structure in K0.5Na0.5NbO3-SrZrO3 ceramics with temperature-stable dielectric properties

Temperature-stable dielectric properties have been developed in the 0.86 K_0.5Na_0.5NbO₃-0.14SrZrO₃ solid solution system. High dielectric permittivity (ε′ = 2310) with low loss sustained in a broad temperature range (−55–201 °C), which was close to that of the commercial BaTiO₃-based high-temperature capacitors. Transmission electron microscopy with energy dispersive X-ray analysis directly revealed that submicron grains exhibited duplex core-shell structure. The outer shell region was similar to the target composition, whilst a slightly poor content of Sr and Zr presented in the core region. Based on Lichtenecker’s effective dielectric function analysis along with Lorentz fit of the temperature dependence of dielectric permittivity, a plausible mechanism explaining the temperature-stable dielectric response in present work was suggested. These results offer an opportunity to achieve the X8 R specification high-temperature capacitors in K_0.5Na_0.5NbO₃ based materials.     

Polarization and strain behaviors of 0.74BiNaTiO3–0.26SrTiO3/Bi0.5(Na0.8K0.2)0.5TiO3 ceramic composite

We investigated the temperature- and frequency-dependent polarization and strain of two bismuth-based perovskite materials, a matrix material and a seed material, with which we formed a composite whose properties we likewise investigated. The chosen matrix material is 0.74Bi_0.5Na_0.5TiO₃–0.26SrTiO₃ (BNT-ST) which has a transition point of ~65 °C, from the relaxor to the ferroelectric phase (T_R-F). The seed material was Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ (BNKT), which possesses a T_R-F of 120 °C. Different polarization and strain behaviors were observed in the BNT-ST/BNKT composite at different test temperatures. At T=25 °C (<T_R-F of the relaxor BNT-ST), the composite exhibited a hysteretic polarization loop and parabolic strain curves which involve an ergodic relaxor-to-normal ferroelectric phase transition with application of an external electric field and the reverse ferroelectric-to relaxor phase transition with removal of the field. When T=80 and 100 °C (>T_R-F °f the relaxor BNT-ST and <T_R-F of the ferroelectric BNKT), the BNT-ST/BNKT has a slim polarization loop and strain magnitudes that are slightly increased from those of pure BNT-ST. When T=120 °C (~T_R-F of the ferroelectric BNKT), the composite has a very slim polarization loop and strain behavior with values that are almost same as those of pure BNT-ST. In addition, the P-S relation for the BNT-ST/BNKT is identical to that of BNT-ST as the operating frequency increases up to 100 Hz. This may be because the polarization of BNT-ST is lower than that of BNKT. The electric field-induced polarization and strain of the BNT-ST/BNKT composite with respect to the temperature and frequency are related to the thermal stability of the ferroelectric seed and the degree of the phase transition in the relaxor matrix.     

Temperature-insensitive dielectric and piezoelectric properties in (1-x)K0.5Na0.5Nb0.997Cu0.0075O3-xSrZrO3 ceramics

Systematic investigation on phase transition, dielectric and piezoelectric properties of (1-x)K_0.5Na_0.5Nb_0.997Cu_0.0075O₃-xSrZrO₃ (x = 0, 0.03, 0.06, 0.09, 0.12, 0.15, abbreviated as KNNC-100xSZ) ceramics was carried out. Due to the coexistence of orthorhombic and tetragonal phase in a wide temperature range, a diffused polymorphic phase transition (PPT) region was achieved in KNNC with x ≥ 0.06. KNNC-12SZ ceramics exhibited high dielectric permittivity (∼1679), low dielectric loss (∼0.02) and small variation (Δe'/ε'_25 °C ≤ 15%) in dielectric permittivity from −78 °C to 237.3 °C. KNNC-6SZ ceramic possessed a high level of unipolar strain (∼0.15%) and maintained a smaller variation of ±12% under the corresponding electric field of 60 kV cm⁻¹ at 10 Hz from 25 °C to 175 °C. d₃₃^*, which was calculated according to the unipolar strain at 60 kV cm⁻¹, was 230 pm V⁻¹ and remained stable below 100 °C. Therefore, our work provided a new promising candidate for temperature-insensitive capacitors and piezoelectric actuators.     

Growth of (Na0.5K0.5)NbO3 single crystals by abnormal grain growth method from special shaped nano-powders

Using the composite powders of (Na_0.5K_0.5)NbO₃ (NKN) nano-particles and nano-rods as starting materials, the NKN single crystals were prepared by abnormal grain growth (AGG) method. The morphology evolution and the formation mechanism in the crystal growth process were investigated in detail. The results revealed that the average size and the apparent quantity of abnormal grains increased gradually with the increase of sintering temperature. The biggest NKN single crystals with size of about 3 mm were obtained at 950 °C for 2 h. Though the nano-particles and nano-rods have the same composition, the driving forces are distinctively different due to the diversity of grain morphology. The nano-rods have the large driving forces especially at high sintering temperature, which plays a dominant role in facilitating the formation of NKN single crystals during AGG process.     

Dielectric,ferroelectric and field-induced strain behavior of K0.5Na0.5NbO3-modified Bi0.5(Na0.78K0.22)0.5TiO3 lead-free ceramics

Lead-free piezoelectric (1 ? x)Bi_0.5(Na_0.78K_0.22)_0.5TiO₃–xK_0.5Na_0.5NbO₃ (BNKT–xKNN, x = 0–0.10) ceramics were synthesized using a conventional, solid-state reaction method. The effect of KNN addition on BNKT ceramics was investigated through X-ray diffraction (XRD), dielectric, ferroelectric and electric field-induced strain characterizations. XRD revealed a pure perovskite phase with tetragonal symmetry in the studied composition range. As the KNN content increased, the depolarization temperature (T_d) as well as maximum dielectric constant (?_m) decreased. The addition of KNN destabilized the ferroelectric order of BNKT ceramics exhibiting a pinched-type hysteresis loop with low remnant polarization (11 μC/cm²) and small piezoelectric constant (27 pC/N) at 3 mol% KNN. As a result, at x = 0.03 a significant enhancement of 0.22% was observed in the electric field-induced strain, which corresponds to a normalized strain (S_max/E_max) of ～434 pm/V. This enhancement is attributed to the coexistence of ferroelectric and non-polar phases at room temperature.     

High temperature dielectrics in the ceramic system K0.5Bi0.5TiO3-Ba(Zr0.2Ti0.8)O3-Bi(Zn2/3Nb1/3)O3

Ceramics in the system (1-x)[0.5K_0.5Bi_0.5TiO₃-0.5Ba(Zr_0.2Ti_0.8)O₃]-xBi(Zn_2/3Nb_1/3)O₃ have been fabricated by a solid-state processing route for compositions x≤0.3. The materials are relaxor dielectrics. The temperature of maximum relative permittivity, T_m, decreased from 150 °C for composition x=0, to 70 °C for x=0.2. The x=0.2 sample displayed a wide temperature range of stable relative permittivity, ε_r, such that ε_r=805±15% from −20 to 600 °C (1 kHz). Dielectric loss tangent was ≤0.02 from 50 °C to 450 °C (1 kHz), but due to the tanδ dispersion peak, the value increased to 0.09 as temperatures fell from 50 °C to −20 °C. Values of dc resistivity were of the order of ~10⁹ Ω m at 300 °C. These properties are promising in the context of developing new high temperature capacitor materials.     

Dielectric and ferroelectric properties of (1 − x)BaTiO3–xBi0.5Na0.5TiO3 ceramics

Lead-free (1 − x)BaTiO₃–xBi_0.5Na_0.5TiO₃ (x = 0.01, 0.02, 0.05, 0.1, 0.2, 0.3) ferroelectric ceramics were fabricated by the conventional ceramic technique. Sintering was made at 1200 °C for 2–4 h in air atmosphere. The crystal structure was investigated by X-ray diffraction. The dielectric and ferroelectric properties were also studied. Room temperature permittivity was found to decrease as Bi_0.5Na_0.5TiO₃ (BNT) content increases. Only the sample with 0.3 mol BNT was found to have relaxor behaviour. The T_c shifted slightly only for BNT addition lower than 0.1 mol. The highest T_c (about 150 °C) was obtained for 0.2 mol BNT addition. The remanent polarization, P_r, decreases whereas the coercive field, E_c, increases monotonously as the BNT content increases.     

Structural and dielectric properties of (Na0.5Bi0.5)0.70Ba0.30TiO3 ceramics

A (Na_0.5Bi_0.5)_0.70Ba_0.30TiO₃ ceramic has been studied by X-ray diffraction and by measurements of dielectric and ferroelectric properties between room temperature and 450 °C. A sharp increase in the electric permittivity and dielectric loss near 200 °C has been observed. This sharp increase in dielectric responses indicates a transformation between normal and relaxor ferroelectric states. It is found that polar regions can exist at higher temperatures. The X-ray diffraction study shows that the transformation corresponds to the first order phase transition from tetragonal to cubic. The use of the (Na_0.5Bi_0.5)_0.70Ba_0.30TiO₃ ceramic for device application has also been indicated.     

Compositional range and electrical properties of the morphotropic phase boundary in the Na0.5Bi0.5TiO3–K0.5Bi0.5TiO3 system

We have investigated the Na_0.5Bi_0.5TiO₃–K_0.5Bi_0.5TiO₃ (NBT–KBT) system, with its complex perovskite structure, as a promising material for piezoelectric applications. The NBT–KBT samples were synthesized using a solid-state reaction method and characterized with XRD and SEM. Room-temperature XRD showed a gradual change in the crystal structure from tetragonal in the KBT to rhombohedral in the NBT, with the presence of an intermediate morphotropic region in the samples with a compositional fraction x between 0.17 and 0.25. The fitted perovskite lattice parameters confirmed an increase in the size of the crystal lattice from NBT towards KBT, which coincides with an increase in the ionic radii. Electrical measurements on the samples showed that the maximum values of the dielectric constant, the remanent polarization and the piezoelectric coefficient are reached at the morphotropic phase boundary (MPB) (? = 1140 at 1 MHz; P_r = 40 μC/cm²; d₃₃ = 134 pC/N).     

Compositional inhomogeneity and segregation in (K0.5Na0.5)NbO3 ceramics

In this report, the effects of the calcination temperature of (K_0.5Na_0.5)NbO₃ (KNN) powder on the sintering and piezoelectric properties of KNN ceramics have been investigated. KNN powders are synthesized via the solid-state approach. Scanning electron microscopy and X-ray diffraction characterizations indicate that the incomplete reaction at 700 °C and 750 °C calcination results in the compositional inhomogeneity of the K-rich and Na-rich phases while the orthorhombic single phase is obtained after calcination at 900 °C. During the sintering, the presence of the liquid K-rich phase due to the lower melting point has a significant impact on the densification, the abnormal grain growth and the deteriorated piezoelectric properties. From the standpoint of piezoelectric properties, the optimal calcination temperature obtained for KNN ceramics calcined at this temperature is determined to be 800 °C, with piezoelectric constant d₃₃=128.3 pC/N, planar electromechanical coupling coefficient k_p=32.2%, mechanical quality factor Q_m=88, and dielectric loss tan δ=2.1%.     

Effects of Nb-doping on the micro-structure and dielectric properties of (Bi0.5Na0.5)TiO3 ceramics

Bismuth sodium titanate [(Bi_0.5Na_0.5)TiO₃ or BNT] ceramics incorporated with 0, 1, 5, 10, 15 and 20 mol% niobium were prepared by conventional solid state reaction method. The green bodies were sintered at 1050 °C for 2 h to obtain dense ceramics. The effects of substitution of niobium ion for titanium ion in BNT ceramics on micro-structure and dielectric properties were investigated. X-ray diffraction analysis showed the presence of a secondary phase when more than 5 mol% niobium was added. Within the solubility limit, Nb doping caused the grain size of BNTNb to be smaller than the undoped sample. The investigation of the dielectric properties showed that the transition temperature (T_c) was found to shift towards lower temperature as the content of Nb increased. In this research, the donor-type behavior and induced charged defects had significant influence on the electrical properties of Nb-doped BNT ceramics.     

Effect of Na0.5Bi0.5TiO3 on dielectric properties of BaTiO3 based ceramics

In this work, Na_0.5Bi_0.5TiO₃ (NBT) was used to improve the high temperature dielectric properties of Nb, Co-doped BaTiO₃ (BT). Different x was selected (x = 0, 0.02, 0.04, 0.06, 0.08, 0.1, 0.2, 0.3, 0.4) to optimize the ratio of BT to NBT in (1 ? x) BT–xNBT solid solution. The dielectric constant of the original X7R material is about 4900 at room temperature, decreasing to 2500 with NBT addition (x = 0.2). Of important is that the temperature stability was improved with dielectric constant variation being less than ±15% up to 160 °C.     

Enhanced dielectric and energy-storage properties in BiFeO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

Lead free Bi_0.5(Na_0.8K_0.2)_0.5TiO₃ thin films doped with BiFeO₃ (abbreviated as BNKT-xBFO) (x = 0, 0.02, 0.04, 0.08, 0.10) were deposited on Pt(111)/Ti/SiO₂/Si substrates by sol-gel/spin coating technique and the effects of BiFeO₃ content on the crystal structure and electrical properties were investigated in detail. The results showed that all the BNKT-xBFO thin films exhibited a single perovskite phase structure and high-dense surface. Reduced leakage current density, enhanced dielectric and ferroelectric properties were achieved at the optimal composition of BNKT-0.10BFO thin films, with a leakage current density, dielectric constant, dielectric loss and maximum polarization of < 2 × 10⁻⁴ A/cm³, ~ 978^, ~ 0.028 and ~ 74.13 μC/cm² at room temperature, respectively. Moreover, the BNKT-0.10BFO thin films possessed superior energy storage properties due to their slim P-E loops and large maximum polarization, with an energy storage density of 22.12 J/cm³ and an energy conversion efficiency of 60.85% under a relatively low electric field of 1200 kV/cm. Furthermore, the first half period of the BNKT-0.10BFO thin film capacitor was about 0.15 μs, during which most charges and energy were released. The large recoverable energy density and the fast discharge process indicated the potential application of the BNKT-0.10BFO thin films in electrostatic capacitors and embedded devices.     

High-temperature dielectrics in CaZrO3-modified Bi1/2Na1/2TiO3-based lead-free ceramics

Materials in two composition regimes, Bi_1/2Na_1/2TiO₃–BaTiO₃–CaZrO₃ (BNT–BT–CZ) and Bi_1/2Na_1/2TiO₃–BaTiO₃–K_0.5Na_0.5NbO₃–CaZrO₃ (BNT–BT–KNN–CZ), were synthesized via the mixed oxide route and their structural, dielectric and electrical properties were investigated. CZ was identified to render the two local maxima in permittivity more diffused. This resulted in temperature-insensitive relative permittivity spectra with average values from ～470 up to ～2300 and operational windows of at least ～400 °C with less than 15% of variation in the temperature range from ?100 up to above 500 °C. Moreover, loss factors are below ～10% and RC constants range from ～0.03 s up to ～4 s at 300 °C. The materials of current investigation are highly attractive for developing capacitors of wide temperature usage.     

Phase transition and electrical properties of Bi0.5(Na0.8K0.2)0.5ZrO3 modified (K0.52Na0.48)(Nb0.95Sb0.05)O3 lead-free piezoelectric ceramics

In this work, (1−x)(K_0.52Na_0.48)Nb_0.95Sb_0.05O₃−xBi_0.5(Na_0.8K_0.2)_0.5ZrO₃ [abbreviated as (1−x)KNNS−xBNKZ, x=0–0.06] lead-free ceramics were fabricated using solid-state reaction method. The effects of BNKZ contents on the phase structure, piezoelectric and ferroelectric properties were investigated. The phase boundaries including orthorhombic-tetragonal (O-T) and rhombohedral-tetragonal (R-T) multiphase coexistence were identified by XRD patterns and temperature-dependent dielectric constant by adding different content of BNKZ. A giant field induced strain (~0.25%) along with converse piezoelectric coefficient d₃₃^* (~629.4 pm/V) and enhanced ferroelectricity P_r (~38 μC/cm²) were obtained when x=0.02, while the specimen with x=0.03 presented the optimal piezoelectric coefficient d₃₃ of 215 pC/N, due to the O-T or R-T phase coexistence near room temperature respectively. These results show that the introduction of Bi_0.5(Na_0.8K_0.2)_0.5ZrO₃ is a very effective way to improve the electrical properties of (K_0.52Na_0.48)(Nb_0.95Sb_0.05)O₃ lead-free piezoelectric ceramics.     

Effects of K0.5Bi0.5TiO3 addition on dielectric properties of BaTiO3 ceramics

(1?x)BaTiO₃–xK_0.5Bi_0.5TiO₃ (abbreviated as BT–KBT, 0.10≦x≦0.15) dielectric ceramics were prepared by a conventional oxide mixing method. The effects of KBT content on the densification, microstructure and dielectric properties of BT ceramics were investigated. The density characterization results show that the addition of KBT significantly lowered the sintering temperature of BT ceramics to about 1280 °C. The XRD results showed that the phase compositions of all samples were pure tetragonal phases. The dielectric constant and dielectric loss firstly increased and then decreased with the increase of KBT. In addition, dielectric constant and dielectric loss versus frequency were characterized in the frequency range from 100 Hz to 2 MHz. It is found that the dielectric constant and the dielectric loss changed with the increase of KBT contents regularly.     

Piezoelectric properties and phase transition temperatures of the solid solution of (1 − x)(Bi0.5Na0.5)TiO3–xSrTiO3

The phase diagram of (1 ? x)(Bi_0.5Na_0.5)TiO₃–xSrTiO₃ was completed and investigations on polarization and strain in this system were carried out. (1 ? x)(Bi_0.5Na_0.5)TiO₃–xSrTiO₃-ceramics were prepared by conventional mixed oxide processing. The depolarization temperature (T_d), the temperature of the rhombohedral–tetragonal phase transition (T_r–t) and the Curie temperature (T_m) were determined by measuring the temperature dependence of the relative permittivity. All solid solutions of (1 ? x)(Bi_0.5Na_0.5)TiO₃–xSrTiO₃ show relaxor behavior (A-site relaxor). From XRD-measurements a broad maximum of the lattice parameter can be observed around x = 0.5 but no structural evidence for a morphotropic phase boundary was found. SEM-analysis revealed a decrease of the grain size for increasing SrTiO₃-content. At room temperature a maximum of strain of about 0.29% was found at x = 0.25 which coincides with a transition from a ferroelectric to an antiferroelectric phase. The temperature dependence of the displacement indicates an additional contribution from a structural transition (rhombohedral–tetragonal), which would be of certain relevance for the existence of a morphotropic phase boundary.