0．6VCMOS轨至轨运算放大器

为适应低压低功耗设计的应用,设计了一种超低电源电压的轨至轨CMOS运算放大器。采用N沟道差分对和共模电平偏移的P沟道差分对来实现轨至轨信号输入．。当输入信号的共模电平处于中间时,P沟道差分对的输入共模电平会由共模电平偏移电路降低,以使得P沟道差分对工作。采用对称运算放大器结构,并结合电平偏移电路来构成互补输入差分对。采用0．13μm的CMOS工艺制程,在0．6V电源电压下,HSpice模拟结果表明,带10pF电容负载时,运算放大器能实现轨至轨输入,其性能为：功耗390μw,直流增益60dB,单位增益带宽22MHz,相位裕度80°。     

一种D类功放中0.5 μm CMOS轨到轨比较器设计

文章设计了一种D类功放中的轨到轨比较器电路。相比于传统的比较器电路,该设计解决了共模信号输入范围大时性能不稳定的问题。仿真表明该比较器电路在-40～125℃和各种工艺角条件下,共模输入电压范围最大可以达到0～5.5V。在125℃高温和5.5V高压条件下,平均工作电流约为0.5mA,性能指标接近并部分超过一些商用芯片。该芯片已经通过0.5μm CMOS工艺流片验证,测试效果良好。     

轨到轨电压比较器的设计

比较器在模数转换及其他模拟功能模块中都是非常重要的器件,其速度和精度直接影响模块的功能.采用SMIC 0.18 CMOS混合信号工艺,设计了一种轨到轨电压比较器,电路结构主要包括前置放大器、锁存器和输出缓冲电路,此外,采用一种β倍增的自偏置基准电路提供偏置电流.结果表明,在3.3V的供电电压下,提供共模范围为300 mV～3.3 V的信号,可分辨输入信号的最小频率为200 MHz,单级运放相位裕度大于60°,输出信号占空比为40％～60％,比较阈值约为10 mV,输入输出延时小于5 ns,功耗小于18 mW,版图面积小于200 μm× 150 μm.该比较器的失真较小,在整个输入信号范围内有较高的共模抑制比,较大限度地提高了电路的性能.     

一种高共模抑制比轨到轨全差分运算放大器

针对传统全差分运算放大器电路存在输入输出摆幅小和共模抑制比低的问题,提出了一种高共模抑制比轨到轨全差分运算放大器电路。电路的输入级采用基于电流补偿技术的互补差分输入对,实现较大的输入信号摆幅;中间级采用折叠式共源共栅结构,获得较大的增益和输出摆幅;输出级采用共模反馈环路控制的A类输出结构,同时对共模反馈环路进行密勒补偿,提高电路的共模抑制比和环路稳定性。提出的全差分运算放大器电路基于中芯国际(SMIC) 0.13μm CMOS工艺设计,结果表明,该电路在3.3 V供电电压下,负载电容为5 pF时,可实现轨到轨的输入输出信号摆幅;当输入共模电平为1.65 V时,直流增益为108.9 dB,相位裕度为77.5°,单位增益带宽为12.71 MHz;共模反馈环路增益为97.7 dB,相位裕度为71.3°;共模抑制比为237.7 dB,电源抑制比为209.6 dB,等效输入参考噪声为37.9 nV/Hz^1/2@100 kHz。     

一种宽带恒定跨导轨对轨运算放大器的设计

介绍了一种具有轨对轨输入功能的CMOS输入级电路。该电路克服了一般运算放大器只能工作在一定共模输入范围的输入级的缺陷，在各种共模输入电平下有着几乎恒定的跨导，使频率补偿更容易实现，且由于其工作原理与MOS晶体管的C—V解析关系无关，对制造工艺依赖性小，适用于深亚微米工艺。在此基础上，设计出了一种宽带的运算放大器，该运算放大器具有轨对轨输入、输出能力，可以作为常用模拟电路的基本单元模块。它没有严格的共模输入限制，跨导和整体性能稳定，适于为更大规模的数字／模拟混合信号系统提供行为级模型。     

基于单一PMOS差分对的轨到轨输入运算放大器设计

基于国内某CMOS工艺设计了一种单一PMOS差分对的轨到轨输入、恒跨导CMOS运算放大器。输入级电路采用折叠共源共栅结构,通过体效应动态调节输入管的阈值电压扩展共模输入范围到正负电源轨,恒定共模输入范围内的跨导,自级联电流镜有源负载将差分输入转换为单端输出;输出级电路采用AB类结构实现轨到轨输出,线性跨导环确定输出管的静态偏置电流。在5 V电源电压,2.5 V共模电压,1 MΩ负载条件下,经Spectre仿真验证,该运算放大器开环增益为119 dB,相位裕度为58°,共模输入范围为0.0027～4.995 V,共模范围内跨导变化小于3%,实现了轨到轨输入共模范围内的跨导恒定。     

一种低压LVDS接收器输入级的设计研究

轨到轨输入预放大级是LVDS接收器设计的关键点之一,一般差分放大器只能满足有限的共模输入范围。结合LVDS接收器的特点,提出了一种接收器轨到轨输入级的电路设计,采用Chartered 0.18μm CMOS工艺和BSIM3V3模型,对电路进行了共模扫描、交流分析和瞬态分析,结果表明,该输入级电路在1.8V电源电压、500Mbps的传输速率下性能良好。     

一种轨至轨输入的低压低功耗运放的设计

本文采用0.35μm的CMOS标准工艺,设计了一种轨至轨输入,静态功耗150μW,相位增益86dB,单位增益带宽2.3MHz的低压低功耗运算放大器。该运放在共模输入电平下有着几乎恒定的跨导,使频率补偿更容易实现,可应用于VLSI库单元及其相关技术领域。     

一款基于电荷泵高压内电源的恒定跨导轨到轨运算放大器

设计了一款基于电荷泵高压内电源的恒定跨导轨到轨运算放大器.输入级采用PMOS差分对结构,通过电荷泵产生高于电源电压的输入级内电源,使运放在轨到轨输入范围能正常工作并保持输入跨导恒定.电荷泵电路所需的时钟信号通过内部振荡器电路产生,再通过电压自举电路和时序电路产生所需电平的非交叠开关控制信号,最后利用时间交织结构输出连续稳定的高压内电源.在电荷泵实现中还采用了辅助开关结合跟随运放的结构降低了主开关在切换时的毛刺.该运放在折叠式共源共栅结构中使用增益自举结构提高了总体增益,输出级采用class AB类输出结构实现轨到轨输出.该运算放大器基于0.5μm CMOS工艺完成电路与版图设计,仿真结果表明,在5 V电源电压下,直流增益为150.76 dB,单位增益带宽为53.407 MHz,相位裕度为96.1°,输入级跨导在轨到轨输入共模范围内的变化率为0.001 25%.     

一种集成轨到轨比较器电路设计

传统比较器在其输入电压过高或过低时,输入MOS对管将进入截止区,从而使电路无法正常工作。本设计采用轨到轨放大器技术,使比较器在输入电压满摆幅时都能正常工作,增加了输入电压的范围。本文基于0.18μm COMS工艺完成电路的设计,并使用Spectre进行电路仿真。结果表明,在电源电压为1.8V时,电路静态功耗为360μW,电压比较精度为80μV,时延为13.2ns。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks