合成硼碳氮体系薄膜的XPS研究

采用Ｘ射线光电子谱（ＸＰＳ）分析３００～５００℃等离子体源离子渗氮硼和碳化硼薄膜合成的氮化硼和硼碳氮薄膜。利用合成薄膜成分可控的特点,研究Ｂ、Ｃ、Ｎ对薄膜的ＸＰＳ影响。结果表明,ＸＰＳ分析合成氮化硼薄膜能够确定其化学组成,但不能确定ｓｐ＾２和ｓｐ＾３型键合结构特性;ＸＰＳ分析硼碳氮薄膜能够确定其成分和结构特性。在较高的工艺温度下,等离子体源离子渗氮合成的硼硕氮薄膜具有ｓｐ＾２和ｓｐ＾３型复合的键合     

RF等离子体CVD合成氮化碳薄膜的XPS研究

采用射频等离子体化学气相沉积技术合成氮化碳薄膜，测量其Ｘ射线光电子能谱（ＸＰＳ），获得两组Ｃ（１ｓ）电子和Ｎ（ｌｓ）电子结合能，它们是Ｅ（Ｃ＾１）＝３９８．０￣３９８．７ｅＶ，Ｅ（Ｃ＾２）＝２８４．６￣２８４．８ｅＶ；Ｅ（Ｎ＾１）＝３９８。０￣３９８．７ｅＶ，Ｅ（Ｎ＾２）＝４００．０￣４００．９ｅＶ。证实了薄膜中碳原子存在ｓｐ＾３杂化轨道成键和ｓｐ＾２杂化轨道成键两种键合形式。该方法合成的氮化碳薄     

极板负偏压对类金刚石薄膜性质的影响

用射频－直流辉光放电系统制备类金刚石薄膜，研究了极板负偏压（Ｖ）对类金刚薄膜性质的影响。结果表明，类金刚石薄膜的性质明显依赖于极板负偏压，在所研究的范围（－３００－９００Ｖ）内，随Ｖ绝对值的增加，薄膜的折射率，消光系数，生长速率，及硬度增加，电阻率下降，Ｖ的变化使膜中Ｈ一及ｓｐ＾３／ｓｐ＾２的比例发生变化，从而使膜的性质发生变化。     

磁过滤弧沉积合成生物医用掺氮无定型碳膜

用磁过滤孤沉积(FVAD)技术在Si(100)上合成了掺氮无定型碳膜,Raman散射光谱和XPS测试获得的N1s能谱用来分析掺氮碳膜的结构特点.所得薄膜具有一定的疏水性.体外血小板黏附试验表明,掺氮无定型碳膜的血小板粘附量较之NiTi和316L黏附的要少,且伪足少.     

非晶金刚石薄膜的制备及其性能研究

本文利用一种新的等离子体沉积技术－真空磁过滤弧沉积制备得到一种无氢的非晶碳膜。ＥＥＬＳ分析表明，这种非晶碳膜几乎不含有ｓ０＾２和ｓｐ杂化键，呈现出高度的金刚石特征，以致可以被称为非晶金刚石膜。     

致密非晶碳氢薄膜的结构

利用完全抑制网络结构（ＦＣＮ）模拟计算氢化非晶碳（ａ－Ｃ：Ｈ）膜的组成。形成致密ａ－Ｃ：Ｈ膜的条件是Ｈ、ｓｐ＾２Ｃ和ｓｐ＾３Ｃ应在其三元相图中的一个三角形区域内。实验数据表明,模拟结果与实验结果吻合得很好。在ａ－Ｃ：Ｈ中存在氢、四面体碳、乙烯、苯环和双苯等结构,它们的相对含量在三角形区域内变化。该理论模拟对薄膜光学间隙的实验分析给出了很好的解释。     

对向靶溅射制备CN膜的键态

使用对向靶溅射系统制备ＣＮ膜。研究了膜的结构和Ｃ与Ｎ之间的键态。膜为非晶结构,Ｎ／Ｃ随Ｎ２分压增大而增大,Ｎ与Ｃ的键合优先形成Ｎ－ｓｐ＾２Ｃ,Ｎ－ｓｐ＾３Ｃ的含量随Ｎ／Ｃ上升而增大。Ｎ含量进一步增大时,出现新的键态,Ｎ－ｓｐ＾３Ｃ含量下降。     

掺氮类金刚石薄膜的制备与性能研究

利用空心阴极放电在玻璃基底表面沉积掺氮类金刚石(DLc)薄膜.拉曼光谱(Raman)分析表明,所制备的碳膜具有典型的类金刚石结构.扫描电镜(SEM)和原子力显微镜(AFM)分析了薄膜表面形貌和粗糙度;利用摩擦磨损仪测量膜的摩擦磨损性能.结果表明,氮的掺入使得薄膜中颗粒致密平整,改变了薄膜的表面微观形貌,进而改善了薄膜的摩擦磨损性能.     

掺氮类金刚石薄膜的微观结构和光学特性研究

采用射频等离子增强化学气相沉积法( PECVD)制备掺氮类金刚石薄膜(DLC:N),通过原子力显微镜,拉曼光谱和椭圆偏振光谱等对试验样品进行研究,实验结果表明,在薄膜中,氮元素主要以C=N键的形式存在,起到了降低薄膜内应力,提高薄膜附着力的作用;此外,通过控制掺氮量可以制得折射率在1.85～1.6范围内的DLC薄膜.     

磁控溅射制备染料敏化太阳能电池氮掺杂碳膜对电极

采用双极脉冲磁控溅射法制备氮掺杂碳膜并作为对电极应用在染料敏化太阳能电池(DSSC)中。研究了氮掺杂对碳膜的结构与性能的影响。用X射线光电子能谱(XPS)对氮掺杂碳膜进行薄膜表面元素分析,用四探针测试仪对氮掺杂碳膜的方块电阻进行测试,用扫描电镜对氮掺杂碳膜表面形貌进行分析。组装电池,用太阳光模拟器测试电池的光电转化率。研究结果表明,经过氮掺杂的碳膜,表面形貌致密,当N2的体积分数为30%时,薄膜中N元素含量为15.21%,薄膜的方块电阻为9.4Ω/□,电池的光电转化率为1.16%。     

Electroanalytical performance of nitrogen-containing tetrahedral amorphous carbon thin-film electrodes

Tetrahedral amorphous carbon (ta-C) consists of a mixture of sp(3)- and sp(2)-bonded carbon ranging from 60 to 40% (sp(3)/sp(3)+sp(2)) depending on the deposition conditions. The physical, chemical, and electrochemical properties depend on the sp(2)/sp(3) bonding ratio as well as the presence of incorporated impurities, such as hydrogen or nitrogen. The ability to grow ta-C at lower temperatures (25-100 °C) on a wider variety of substrates as compared to CVD diamond is an advantage of this material. Herein, we report on the structural and electrochemical properties of nitrogen-incorporated ta-C thin films (ta-C:N). The incorporation of nitrogen into the films decreases the electrical resistivity from 613 ± 60 (0 sccm N(2)) to 1.10 ± 0.07 Ω-cm (50 sccm N(2)), presumably by increasing the sp(2)-bonded carbon content and the connectedness of these domains. Similar to boron-doped diamond, these materials are characterized by a low background voltammetric current, a wide working potential window (~ 3 V), and relatively rapid electron-transfer kinetics for aqueous redox systems, including Fe(CN)(6)(-3/-4) and Ru(NH(3))(6)(+3/+2), without conventional pretreatment. Additionally, there is weak molecular adsorption of polar molecules (methylene blue) on the ta-C surface. Overall, the properties of the ta-C and ta-C:N electrodes are such that they could be excellent new choices for electroanalytical measurements.     

Composition and Microstructure of Magnetron Sputtering Deposited Ti-containing Amorphous Carbon Films

Ti-containing carbon films were deposited by using magnetron sputtering deposition. The composition and microstructure of the carbon films were characterized in detail by combining the techniques of Rutherford backscattering spectrometry （RBS）, X-ray photoelectron spectroscopy （XPS）, X-ray diffraction （XRD） and transmission electron microscopy （TEM）. It is found that carbon films contain Ti 18 at pct; after Ti incorporation, the films consist of titanium carbide; C1s peak appears at 283.4 eV and it could be divided into 283.29 and 284.55 eV, representing sp2 and sp3, respectively, and sp2 is superior to sp3. This Ti-containing film with dominating sp2 bonds is nanocomposites with nanocrystalline TiC clusters embedded in an amorphous carbon matrix, which could be proved by XRD and TEM.     

Structure and electrochemical properties of carbon films prepared by a electron cyclotron resonance sputtering method

This paper describes the characterization, electrochemical properties, and applications of carbon films prepared by the electron cyclotron resonance (ECR) sputtering method. The ECR-sputtered carbon film was deposited within several minutes at room temperature. The optimized sputtering conditions significantly change the film structure, which includes many more sp3 bonds (sp3/sp2 = 0.702) than previously reported film (sp3/sp2 = 0.274)1 with an extremely flat surface (0.7 A). The ECR-sputtered carbon films exhibit excellent electrochemical properties. For example, they have nearly the same potential window in the positive direction as that of high-quality, boron-doped diamond (moderately doped, 10(19)-10(20) boron atoms/cm3)2 and an even wider potential window in the negative direction with a low background current, high stability, and suppression of fouling by electroactive species without pretreatment. The electron-transfer rates at ECR-sputtered carbon films are similar to those of glassy carbon (GC) for Ru(NH3)(6)(2+)/(3+) and Fe(CN)(6)(3-)/(4-), whereas they are much slower than those of GC for Fe2+/3+, dopamine oxidation, and O2 reduction due to weak interactions between electroactive species and the ECR-sputtered carbon film surface. Such a response can be attributed to the ultraflat surface and low surface O/C ratios of ECR-sputtered carbon films. ECR-sputtered carbon film is advantageous for measuring biochemicals with high oxidation potentials because of its wide potential window and high stability. Highly reproducible and well-defined cyclic voltammograms were obtained for histamine and azide ions with a peak potential at 1.25 and 1.12 V vs Ag/AgCl, respectively. The film is very stable for continuous voltammetry measurements in 10 microM bisphenol A, which usually fouls the electrode surface with oxidation products.     

电绝缘用ta-C薄膜的微观结构与电学特性

采用ta—C薄膜用于SOI结构中的绝缘层，在高温高功率器件中有很大的应用潜力。应用真空磁过滤弧源沉积(FAD)的方法制备了ta—C薄膜。通过AFM、non—RBS、IR、I—V、C—V等方法对薄膜的表面形貌、微观结构和电学性能进行了研究。研究表明，ta—C薄膜的sp^3键含量高达87％，且具有很高的表面光洁度(粗糙度低于0．5nm)及较好的电绝缘性能，击穿场强达到4．7MV／cm。     

Influence of Bias on the Properties of Carbon Nitride Films Prepared by Vacuum Cathodic Arc Method

Carbon nitride films have been synthesized in a wide range of biases from 0 to -900 V by vacuum cathodic arc method. The N content was about 12.0-22.0 at. pct. Upon increasing the biases from 0 to -100 V, the N content increased from 15.0 to 22.0 at. pct which could be attributed to the knot-on effect. While the further increasing biases led to the gradual falling of the N content to 12.0 at. pct at -900 V due to the enhancement of the sputtering effect. Below -200 V, with the increasing biases the sp2C fraction in the films decreased, as a result of vvhich the I(D)/I(G) fell in the Raman spectra and the sp peaks also showed the decreasing tendency relative to the s peaks in the VBXPS (valence band X-ray photoelectron spectroscopy). While above -200 V, the sp2C fraction increased and the films became graphitinized gradually, accompanying which the I(D)/I(G) rose from -200 V to -300 V and the Raman spectra even shovved the graphite characteristic above -300 V and the sp peaks rose again relative to the s     

Theoretical and spectroscopic investigations on the structure and bonding in B-C-N thin films

In this study, we have synthesized boron, carbon, and nitrogen containing films using RF sputter deposition. We investigated the effects of deposition parameters on the chemical environment of boron, carbon, and nitrogen atoms inside the films. Techniques used for this purpose were grazing incidence reflectance-Fourier-transform infrared spectroscopy (GIR-FTIR), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). GIR-FTIR experiments on the B-C-N films deposited indicated presence of multiple features in the 600 to 1700 cm^− 1 range for the infrared (IR) spectra. Analysis of the IR spectra, XPS and the corresponding EELS data from the films has been done in a collective manner. The results from this study suggested even under nitrogen rich synthesis conditions carbon atoms in the B-C-N films prefer to be surrounded by other carbon atoms rather than boron and/or nitrogen. Furthermore, we have observed a similar behavior in the chemistry of B-C-N films deposited with increasing substrate bias conditions. In order to better understand these results, we have compared and evaluated the relative stability of various nearest-neighbor and structural configurations of carbon atoms in a single BN sheet using DFT calculations. These calculations also indicated that structures and configurations that increase the relative amount of C-C bonding with respect to B-C and/or C-N were energetically favorable than otherwise. As a conclusion, carbon tends to phase-segregate in to carbon clusters rather than displaying a homogeneous distribution for the films deposited in this study under the deposition conditions studied.     

XPS study of carbon nitride films deposited by hot filament chemical vapor deposition using carbon filament

Amorphous carbon nitride, a-CN_x, thin films were deposited by hot filament CVD using a carbon filament with dc negative bias voltage on the substrate. The effects of the negative bias and the filament components on the binding structure of the films are investigated by XPS. The composition ratio of graphite to amorphous carbon in the filaments affects the bonding structure of carbon and nitrogen in the films, although the nitrogen content in the films is almost same as 0.1. The nitrogen content in the films changes from 0.1 to 0.3 as the negative bias changes from 0 to − 300 V.     

碳氮纳米结构材料的Raman和XPS分析

利用等离子体增强热丝化学气相沉积在不同条件下制备了不同结构的碳氮纳米结构材料。用扫描电子显微镜(SEM)、显微Raman光谱仪和X射线光电子谱(XPS)仪对它们的形貌和结构进行了分析。SEM照片表明在不同的生长条件下可制备出碳氮纳米尖锥、碳氮柱。Raman谱中位于1350和1607cm-1的D和G峰,表明制备的碳氮纳米结构材料主要由sp2碳组成。根据D和G峰的强度比,估计的sp2碳颗粒为4nm。XPS谱在398.4eV处显示出与氮有关的峰,表明制备的碳氮纳米结构材料中含有氮。对N1sXPS谱的峰进行拟合后,发现位于398.4eV的峰由位于398.3和约400.0eV的两个峰组成,分别与sp3和sp2 C—N键有关,表明材料中的部分碳原子被氮原子所替代。     

原子氢在纳米金刚石薄膜生长中的作用

探索了原子氢在各类制备条件下对纳米金刚石薄膜生长所起的作用,指出贫氢环境并不是纳米金刚石薄膜制备的必备条件,原子氢与Ar在贫氢环境和富氢环境中的作用机理不尽相同.通过施加衬底偏压能促进氢离子的产生,氢离子刻蚀sp²碳的能力比刻蚀sp³碳能力强很多,同时能产生表面缺陷,因而富原子氢环境更有利于纳米金刚石薄膜成核与生长.