共查询到19条相似文献,搜索用时 46 毫秒
1.
2.
3.
4.
5.
6.
为提高极坐标激光直写设备的性能,设计成全数字化的转台系统,增强了与平台、调焦、 光强系统的同步。提出数字锁相积分、可编程PID控制及变周期稳速判据等概念,并应用于转台控制器设计。配合改进的快速光强调制系统,使极坐标激光直写设备具备制作精确环、任意弧和变宽线条的能力。 相似文献
7.
8.
9.
基于近场静电纺丝的微/纳米结构直写技术 总被引:1,自引:0,他引:1
基于近场静电纺丝(舾),研究了可用于柔性电子制造的微/纳米结构直写技术.构建了电极、收集板可协调运动的直写实验平台,分析了电纺丝参数对微/纳米结构直写过程的影响和直写参数间的匹配.通过缩短电纺丝距离实现对直写过程的控制,分别采用直径为25μm的实心探针针尖和内径为232μm的空心注射针尖作为电纺丝喷头,可有序地直写出直径为50—500nm的纳米纤维和线宽为1—8μm的微米结构.实验结果表明:微米结构线宽随收集板速度和PEO溶液浓度的变大而变大;直写工作电压随收集板运动速度的变大而减小,随电极至收集板距离的增加而变大.协调电极与收集板运动速度,平行直写微米结构间距可控制在100-180μm之间. 相似文献
10.
11.
This paper reports on the fabrication and characterization of single-mode polymer optical waveguides at telecom and SOI compatible wavelengths; by making a comparison between an epoxy and a siloxane polymer waveguide material system (both commercially-available). The proposed waveguides can be used in short-reach optical interconnects targeting chip-to-chip communication on the interposer level or providing a coupling interface between single-mode optical fibers and photonic integrated circuits (PICs). This technology enables the integration of optoelectronic chips for photonic packaging purposes. First, the single-mode dimensions (4 × 4 μm2 and 5 × 5 μm2) for both materials at selected wavelengths (1.31 μm and 1.55 μm) were determined based on the refractive index measurements. Then, the waveguides were patterned by a direct-write lithography method. The fabricated waveguides show a high-quality surface with smooth sidewalls. The optical propagation losses were measured using the cut-back method. For the siloxane-based waveguides, the propagation losses were found to be 0.34 dB/cm and 1.36 dB/cm at 1.31 μm and 1.55 μm respectively while for the epoxy-based waveguides the losses were 0.49 dB/cm and 2.23 dB/cm at 1.31 μm and 1.55 μm respectively. 相似文献
12.
13.
14.
15.
16.
Chalcogenide thin films are used as the recording medium for phase change-type optical memory discs. The films are switched
between amorphous and crystalline states using the heat of a focussed laser beam. Large reflectivity differences between amorphous
and crystalline states are then used to store and retrieve the information. An active chalcogenide layer for this purpose
should have a high optical absorption coefficient (α), and good structural and thermal stability. It should be possible to
switch the chalcogenide layer between amorphous and crystalline states repeatedly within a short duration, the optical contrast
should be high, and the material must have large cycling capability. Keeping the above requirements in mind, we have carried
out systematic investigation of structural, optical and crystallization behaviour of thin films of various compositions of
GaGeTe, Sb2Te3 and BiSe. These studies have shown that these materials can be good candidates for use as recording media in erasable phase-change
optical recording. 相似文献
17.
本文依据功率传输方程,导出了在失配条件下镜像法测量增益的简化公式,分析了失配对增益测量的影响。给出了一个失配角锥喇叭增益的测量结果,它与标准增益符合很好。 相似文献
18.
介绍了ARRAY 2905HD底片数字化扫描仪的技术指标和用途。对其噪声、散射等特性进行了测试,给出了噪声数据和散射特性等测试结果。这些测试结果为扫描仪在胶片定量扫描时的最佳应用提供了可靠的依据。 相似文献
19.