50～75 MHz 1200 W脉冲功率LDMOS器件的研制

分析了工作于甚高频(VHF)频段的千瓦级横向扩散金属氧化物半导体(LDMOS)器件的输出功率、漏极效率及功率增益等关键参数在设计时应考虑的因素,在此基础上,采用0.8 μm LDMOS工艺成功研制了一款工作于VHF频段的脉冲大功率硅LDMOS场效应晶体管(LDMOSFET).设计了用于50～ 75 MHz频带的宽带匹配电路.研制的器件击穿电压为130 V.在工作电压为50 V,工作脉宽为1 ms,占空比为30％的工作条件下测试得到,器件的带内输出功率大于1 200 W,功率增益大于20 dB,漏极效率大于65％,抗驻波比大于10∶1.     

1.2~1.4GHz 600W硅LDMOS微波功率晶体管研制北大核心CSCD

针对雷达、通信、遥控遥测等领域对LDMOS大功率器件的迫切需求,基于南京电子器件研究所LDMOS技术平台,优化了版图布局、芯片结构,开发了50VL波段600 W硅LDMOS。该器件耐压大于115V,在50V工作电压、1.2~1.4GHz工作频率、300μs脉宽,10%占空比及15 W输入功率的工作条件下,输出功率大于630 W,增益大于16.3dB,漏极效率大于53.1%。所研制的芯片已进入相关工程应用。     

1.2~1.4GHz 600W硅LDMOS微波功率晶体管研制

针对雷达、通信、遥控遥测等领域对LDMOS大功率器件的迫切需求,基于南京电子器件研究所LDMOS技术平台,优化了版图布局、芯片结构,开发了50VL波段600 W硅LDMOS。该器件耐压大于115V,在50V工作电压、1.2~1.4GHz工作频率、300μs脉宽,10%占空比及15 W输入功率的工作条件下,输出功率大于630 W,增益大于16.3dB,漏极效率大于53.1%。所研制的芯片已进入相关工程应用。     

2000W硅LDMOS微波脉冲大功率晶体管

针对雷达、等离子体射频源、广播通信等领域对LDMOS大功率器件的迫切需求,通过热仿真优化了芯片版图布局,通过芯片级Load-pull仿真优化了芯片结构,成功开发了50V千瓦级硅LDMOS功率管。该器件耐压大于140V,在50V工作电压、230MHz工作频率、100μs脉宽、20%占空比、18W输入功率的测试条件下,输出功率大于2 000 W,增益大于20.4dB,漏极效率大于66.2%,抗失配通过10∶1。     

用于雷达的LDMOS微波功率放大器设计

硅LDMOS晶体管以其大输出功率和高效率等优点作为微波功率放大器广泛应用于雷达发射机中.在大信号S参数无法获得而厂家提供的1710 MHz～2110 MHz范围内的源阻抗和负载阻抗参数又不能用时,利用一公司的ADS软件,采用负载牵引法得到了输入和输出阻抗.在对晶体管绝对稳定性分析的基础上,运用共轭匹配,成功设计出P-1大于30W、功率增益在1580MHz～1650 MHz频率范围内、增益保持在30dB以上和PAE大于30%的2级LDMOS微波功率放大器.同时,得到了最终的版图并且运用MOMENTUM对它进行了2.5D仿真,得到了理想的结果.     

2.2～2.4 GHz 110W硅脉冲功率晶体管

微波系统对功率放大用的硅功率晶体管的微波输出功率、增益、效率等性能指标提出了越来越高的要求。南京电子器件研究所先后在 P,L,S,C波段硅微波功率晶体管研究领域取得进展。最近又研制成功工作频率 2 .2～ 2 .4GHz,脉冲宽度 1 0 0μS,占空比 1 0 % ,输出功率大于 1 1 0 W,功率增益大于 8.0 d B,效率大于 45 %的硅脉冲功率晶体管。微波功率晶体管设计制造的重点和难点主要有如下三个方面 :1 .克服微波寄生参数 ,提高微波增益性能 ;2 .克服基区大注入效应 ,提高功率容量 ,保持大功率条件下的微波性能 ;3.克服大功率应用所带来的热效应 …     

单芯片大功率RFLDMOS晶体管设计与实验

传统射频LDMOS晶体管的源区采用重掺杂p+sinker结构,该结构会占据较大的芯片面积。文中采用槽型sinker结构,可将源区sinker面积减少1/3以上。通过流片实验,得到饱和电流为170 mA/mm、击穿电压120 V、截止频率和最大振荡频率分别为5.5 GHz和10 GHz的RF LDMOS器件。在50 V工作电压、1 090 MHz频点下栅宽345 mm单芯片器件的最大输出功率362 W,功率增益15.6 dB,漏极效率38.1%。     

1.2～1.4 GHz 300 W宽带硅大功率双极晶体管研制

介绍了L波段300 W宽带硅微波脉冲大功率晶体管研制结果。采用大面积亚微米精细线条阵列加工技术、深亚微米浅结制备工艺技术、均匀热分布技术、双层金属化技术等工艺技术,研制出了L波段300 W宽带硅微波脉冲大功率晶体管。器件在1.2~1.4 GHz频带内,脉冲宽度150μs,占空比10%,工作电压40 V条件下,全频带内输出功率大于300 W,功率增益大于8.75 dB,集电极效率大于55%,并具有良好的可靠性。     

L波段250W宽带硅微波脉冲功率晶体管

南京电子器件研究所最近研制成功 L波段2 5 0 W宽带硅微波脉冲功率晶体管。该器件在 1 .2～ 1 .4GHz频带内 ,脉宽 1 5 0 μs,占空比 1 0 %和 40V工作电压下 ,全带内脉冲输出功率在 2 4 0～ 30 0W之间 ,功率增益大于 7.8d B,效率大于 5 0 %。器件设计为梳条状结构 ,单元间距 6μm,发射极和基极金属条条宽 2 .4μm,金属条间距 0 .6μm。每个器件由 6个尺寸为 1 60 0μm× 75 0μm功率芯片组成 ,每个功率芯片含有 2个子胞。整个器件包含 1 2个子胞、2 0个电容和 2 0 0多条连接金丝匹配而成。在微波功率发射等领域 ,硅微波脉冲大功率晶体管具…     

世界固体电子新闻

<正>L波段脉宽10μs输出750W的微波晶体管 据《Microwaves&RF》1992年第10期报道,菲利浦公司已研制成1030～1090 MHz MX1011B700Y型硅双极微波晶体管,典型输出功率为750W。这种晶体管适合于中等脉宽10μs,占空因子为1％的脉冲发射机。典型效率为54％,功率增益大于6dB。晶体管封装在FO91B金属陶瓷法兰盘式的管壳内。 (盛柏桢)     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.