用于布里渊分布式光纤传感的光学锁频系统

报道了一种用于布里渊分布式光纤传感器(DOFS)的高稳定光学锁频系统。一台波长为1550nm的半导体分布反馈(DFB)激光器作为主激光器用于光纤传感探测,另一台同样的激光器作为从激光器,采用光学锁相的方法将其与主激光器进行频率跟踪,使主激光器与从激光器频率差恒定为11GHz。利用该光源搭建基于自发布里渊的分布式光纤传感系统(BOTDR),可以有效地实现宽带移频,使得探测解调频率降低到百兆赫兹量级,大大降低了探测的噪声,并且降低了BOTDR系统成本。结果表明,采用此光源方案的频率波动范围为±1MHz。     

用改变激光等离子体折射率的方法稳定He-Ne激光器的频率

本文介绍一种Zeeman He-Ne气体激光器新的稳频方法,通过控制激光等离子体介质的折射率来稳定激光器的频率。系统使用普通单模He-Ne激光管,不需要特殊加工的、带压电陶瓷(PZT)的稳频激光管。由于采用了锁相技术,它的自差拍频率的变化率小于1Hz,其光频的稳定度为2.2×10~(-11)(取样时间τ=10s)。两个月内,频率再现性为2×10~(-8)。频率锁定点可在大于200MHz的范围内连续调谐。     

密集波分复用激光光源的声光偏频无调制频率锁定

利用声光调制器(AOM)的偏频特性,以CH4分子吸收线R9支一条强吸收线(λ=1.6378μm)作为参考频率,实现了对外腔式半导体激光器的无调制频率锁定。实验中在100 s内典型的频率起伏小于5.6 MHz,较激光器自由运转时的频率起伏34 MHz有了显著的改善,而误差信号的阿仑(Allan)方差平方根(即稳定度)在平均积分时间为16 s时达到最小值5.75×10-10。该方法实现了基于气体分子吸收线的半导体激光器无调制锁频,并且CH4分子在1.6~1.7μm处有丰富的振转光谱,满足光纤通信中对激光器输出波长的要求,可应用于光纤通信中激光光源的频率锁定。     

用于布里渊散射光时域分析仪的激光光源研究

在分析布里渊散射时域分析仪(BOTDA)对激光光源要求和研究现状的基础上,提出了一种新的移频及扫频方法。其特点是通过法布里珀罗干涉仪和微控制器将两台分布反馈(DFB)半导体激光器频率锁定在11GHz左右,然后根据频差微调其中一台激光器电流实现扫频,法布里珀罗干涉仪监测频差的同时将频差实时传送给传感器做数据分析。     

铟离子冷却用跃迁频率与同位素移动的精密测量

利用囚禁在Paul型离子阱中的铟单离子和飞秒光频梳实现了铟离子5s2 1So(F=9/2)-5s5p 3P1(F=11/2)230.6 nm冷却用跃迁频率的精密测量,准确度有超过两个量级的提高.一台基于半导体激光器的四倍频系统作为光源,飞秒激光光频梳作为光频测量的工具,它的参考源为一台铯原子钟.铟离子,'115In 与113In 的跃迁频率分别为1 299 648 954.54(10)MHz和1 299 649 585.36(16)MHz.该跃迁对应的纯同位素移动为630.82(19)MHz,考虑超精细相互作用后,同位素移动为695.76(1.68)MHz.     

基于共焦法布里-珀罗腔的无调制激光频率锁定

将激光器锁定到合适的参考频率上,可以有效改善激光器的频率稳定性。对于共焦法布里-珀罗(CFP)腔,沿腔轴的光路与同腔轴有一小夹角的光路对应的光程不同,因此二者对应的腔共振透射峰的频率之间会发生相对频移。这一特性可用来产生以共焦法布里-珀罗腔作为频率标准稳定激光频率的类色散型鉴频曲线,而不需要对激光频率或者共焦法布里-珀罗腔长进行调制扰动,也无需采用相敏探测。实验中实现了自制的852 nm光栅反馈半导体激光器相对于共焦法布里-珀罗腔的无调制频率锁定,由闭环锁定后的误差信号分析,30 s内典型的频率起伏小于340 kHz,较相同时间段内激光器自由运转时的频率起伏(约10 MHz)有了显著的改善。还通过调节入射到共焦法布里-珀罗腔两光束之间的夹角来改变频移量,对不同频率间隔下的类色散型鉴频曲线的斜率以及对激光器锁频后的频率稳定性作了比较。     

F-P腔锁频压窄窄线宽激光器输出波长精度测试

基于谐振式光纤陀螺系统要求窄线宽、高稳定性激光输出以满足谐振信号频差检测要求,设计了两种不同光路锁频系统并搭建了测试平台,利用波长计实时监控窄线宽激光器锁频前后两种状态下波长的变化情况。对方案二设置两种不同的仪器锁频参数,分别对激光器输出波长的锁频精度进行监控分析,得到不同设置参数可导致锁频精度降低1倍。两种方案测试结果均为锁频后的激光波长变化幅度仅为锁频前的0.2倍,且曲线频率变化光滑平缓,很大程度地压窄了窄线宽激光器输出波长变化幅度,波长变化稳定性得到了很大改善,提高了锁定信息反馈的实时性。进一步实施窄线宽激光谱线的压窄以及PI电路对窄线宽激光频率的有效快速跟踪锁定提供技术支撑。     

基于精密波长计的外腔半导体激光长期稳频系统

为抑制连续激光器的长期频率漂移,以精密波长计为参考频率标准,由计算机控制可实现连续激光无调制稳频.此方法从计算机获取波长计数据,利用数字比例积分微分(PID)计算出输出给激光器的反馈电压值,从而修正激光器腔长、实现激光器频率的锁定.此方法可用于目前商业激光器光谱范围内的任意波长,能在激光器频率可调节范围内任意频率点进行锁定.用此方法实现了对631 nm外腔半导体激光器的锁定,获得了1h频率不确定度为7.4 MHz、长期频率漂移率为±1.1 MHz/h的稳定锁定.     

相位锁定至超窄线宽激光的高相干性双光梳研究

研究并实现了一种相位锁定至超窄线宽激光的双光梳系统。实验通过将两台重复频率约为200MHz、重复频率差约为17 kHz的掺铒锁模激光器的对应梳齿,同时分别锁定到两台不同波长(1542 nm和1560 nm)的窄线宽连续激光器上,实现了相位相干且稳定度高的双光梳。锁定后单台光梳的梳齿线宽均低于5Hz(受限测试条件),两台光梳的相对线宽小于0.35Hz。该双光梳系统对于高精度光谱分析、时频传递,尤其是绝对距离测量等领域具有重要的应用价值。     

基于分布反馈注入锁定的连续可调光子微波倍频实验研究

提出了一种基于注入锁定分布反馈式(DFB)激光器的双波长差频微波/毫米波信号产生方案。方案利用正弦波光信号通过半导体光放大器(SOA)进行非线性展宽,产生高阶分量,然后注入到两个DFB激光器后进行锁定放大,产生频率连续可调的倍频信号。在实验中,注入的正弦波光信号频率为1.25GHz,得到20～40GHz频率范围内1.25GHz的任意自然数倍的连续可调微波信号,其最高倍频数为32。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.