共查询到20条相似文献,搜索用时 15 毫秒
1.
Karolina Górnicka Xin Gui Bartlomiej Wiendlocha Loi T. Nguyen Weiwei Xie Robert J. Cava Tomasz Klimczuk 《Advanced functional materials》2021,31(3):2007960
Superconductivity was first observed more than a century ago, but the search for new superconducting materials remains a challenge. The Cooper pairs in superconductors are ideal embodiments of quantum entanglement. Thus, novel superconductors can be critical for both learning about electronic systems in condensed matter and for possible application in future quantum technologies. Here two previously unreported materials, NbIr2B2 and TaIr2B2, are presented with superconducting transitions at 7.2 and 5.2 K, respectively. They display a unique noncentrosymmetric crystal structure, and for both compounds the magnetic field that destroys the superconductivity at 0 K exceeds one of the fundamental characteristics of conventional superconductors (the “Pauli limit”), suggesting that the superconductivity may be unconventional. Supporting this experimentally based deduction, first-principle calculations show a spin-split Fermi surface due to the presence of strong spin–orbit coupling. These materials may thus provide an excellent platform for the study of unconventional superconductivity in intermetallic compounds. 相似文献
2.
Karim Khan Ayesha Khan Tareen Lude Wang Muhammad Aslam Chunyang Ma Nasir Mahmood Zhengbiao Ouyang Han Zhang Zhongyi Guo 《Advanced functional materials》2021,31(3):2005957
The 2D graphene (G) nanosheets (NSs) discovery is amound the foremost revolutionary incidents in materials science history. This discovery has stimulated huge attention in the study of other novel 2D materials (2DMs). This trend might be called modern day “alchemy,” where the basic aim is to convert most of periodic table elements into G like 2D structures. Monoelemental, atomically thin 2DMs, called “Xenes” (“X” = group (III–VI)A elements, “ene” suffix that indicates one atom thick 2D layer of atoms) which are a newly invented family among nanomaterials. The number of predicted and experimentally synthesized 2D Xene materials of group IVA, i.e., G's siblings, has gained attention in nanosize devices. Such materials involve buckle structures that have recently been experimentally fabricated. The 2D Xene materials analog to G offer exciting potential for novel sensing applications. The group IVA Xenes, in cooperation with their ligand-functionalized derivatives, arrange in a honeycomb lattice analogous to G but through a changeable degree of buckling. Their electronic structure ranges from trivial insulators passing via semiconductors with tunable gaps, to semimetallic, depending on substrate, chemical functionalization, and strain. In this review, different potential synthesis methods for group IVA 2D Xenes are briefly presented. A brief overview of their properties obtained theoretically and experimentally is presented, and finally their potential sensing applications are discussed. 相似文献
3.
Seung Gyo Jeong Jin Young Oh Lin Hao Jian Liu Woo Seok Choi 《Advanced functional materials》2023,33(38):2301770
Unexpected, yet useful functionalities emerge when two or more materials merge coherently. Artificial oxide superlattices realize atomic and crystal structures that are not available in nature, thus providing controllable correlated quantum phenomena. This review focuses on 4d and 5d perovskite oxide superlattices, in which the spin–orbit coupling plays a significant role compared with conventional 3d oxide superlattices. Modulations in crystal structures with octahedral distortion, phonon engineering, electronic structures, spin orderings, and dimensionality control are discussed for 4d oxide superlattices. Atomic and magnetic structures, Jeff = 1/2 pseudospin and charge fluctuations, and the integration of topology and correlation are discussed for 5d oxide superlattices. This review provides insights into how correlated quantum phenomena arise from the deliberate design of superlattice structures that give birth to novel functionalities. 相似文献
4.
Tingting Wang Huide Wang Zongkui Kou Weiyuan Liang Xiaoling Luo Francis Verpoort Yu‐Jia Zeng Han Zhang 《Advanced functional materials》2020,30(36)
As an emerging subclass of 2D materials, Xenes (e.g., borophene, silicene, germanene, stanene, phosphorene, arsenene, antimonene, and bismuthene) consist of one single element and have opened the door for various important applications. Benefiting from their impressive characteristics, including ultrathin folded structure, ultrahigh surface–volume ratio, excellent mechanical strength and flexibility, Xenes are considered as promising electrode materials in the field of electrochemical energy with large capacity, high rate, and high safety. This review provides a comprehensive summary of selected properties, synthetic challenges, and the latest theoretical and experimental advances in the energy‐related applications of Xenes, including Li/Na ion batteries, Li–S batteries, electrocatalysis, and supercapacitors. Finally, the challenges and outlook of this emerging field are discussed. 相似文献
6.
Daekyu Koh Jaimin Kang Taehwan Kim Jisung Lee Sujung Noh Hansaem Lee JoonHyun Kwon Soogil Lee Jongsun Park Byong-Guk Park 《Advanced Electronic Materials》2023,9(4):2201073
Physical unclonable functions (PUFs), which exploit uncontrollable and unpredictable randomness of materials or devices, have been investigated as a hardware-based security primitive owing to their robustness against adversarial attacks. Spin–orbit torque (SOT) switching is one of the promising techniques for PUF applications because it can provide randomness by the stochastic switching distribution of perpendicular magnetization. In this study, the improvement in the reliability of SOT-based PUFs against external magnetic fields with write-back operation (WBO) is demonstrated. A PUF consisting of 8 × 4 array Hall-bar devices with a Ta/CoFeB/MgO structure is fabricated, where the random distribution of the SOT switching current serves as an entropy source. However, the information stored in the PUF is easily modified by the application of an external magnetic field. To improve the robustness against magnetic fields, a WBO is introduced that applies an additional current to saturate the magnetization in either the upward or downward direction depending on the magnetic state. As a result, the SOT-based PUF maintains an entropy value close to unity under a magnetic field of up to the coercive field of the CoFeB layer. Furthermore, the WBO provides a digitalized output, which potentially reduces peripheral circuitry such as analog-to-digital converters. 相似文献
7.
Zelalem Abebe Bekele Xionghua Liu Yi Cao Kaiyou Wang 《Advanced Electronic Materials》2021,7(1):2000793
Spin–orbit torque (SOT) induced perpendicular magnetization switching in Pt1-xGdx/Co/Al2O3 heterostructure with x = 0, 0.02, 0.14, 0.30, and 0.33 is investigated. With in-plane charge current flowing through the Pt1-xGdx layer, field-free current-induced magnetization switching is observed for all nonzero x due to the existence of opposite spin Hall angles (θSHA) from Pt1-xGdx alloys. Furthermore, the large θSHA of about 0.27 is obtained in the optimal Pt0.70Gd0.30 alloy films, which is about four times larger than that of the pure Pt. This work suggests a simple and scalable method for realizing field-free SOT switching, and provides potential candidates of spin Hall materials that can be used to produce highly efficient SOTs. 相似文献
8.
利用电场控制电荷的自旋流与电流相互转换是自旋电子器件的关键所在,而这种控制机制在铁电半导体GeTe中可以得到实现,因为其铁电极化可以改变自身的自旋织构.基于密度泛函理论计算,我们发现可以通过铁电极化可以进一步调节自旋霍尔电导(spin Hall conductivity,简记为SHC),通过计算得到自旋霍尔电导的一个分... 相似文献
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Jinwu Wei Hai Zhong Jiuzhao Liu Xiao Wang Fanqi Meng Hongjun Xu Yizhou Liu Xin Luo Qinghua Zhang Yao Guang Jiafeng Feng Jia Zhang Lihong Yang Chen Ge Lin Gu Kuijuan Jin Guoqiang Yu Xiufeng Han 《Advanced functional materials》2021,31(40):2100380
Complex oxides with 4d/5d transition metal ions, e.g., SrRuO3, usually possess strong spin–orbit coupling, which potentially leads to efficient charge-spin interconversion. As the electrical transport property of SrRuO3 can be readily tuned via structure control, it serves as a platform for studying the manipulation of charge-spin interconversion. Here, a factor of twenty enhancement of spin–orbit torque (SOT) efficiency via strain engineering in a SrRuO3/Ni81Fe19 bilayer is reported. The results show that an orthorhombic SrRuO3 leads to a higher SOT efficiency than the tetragonal one. By changing the strain from compressive to tensile in the orthorhombic SrRuO3, the SOT efficiency can be increased from an average value of 0.04 to 0.89, corresponding to a change of spin Hall conductivity from 27 to 441 × ħ/e (S cm−1). The first-principles calculations show that the intrinsic Berry curvature can give rise to a large spin Hall conductivity (SHC) via the strain control, which is consistent with the experimental observations. The results provide a route to further enhance the SOT efficiency in complex oxide-based heterostructures, which will potentially promote the application of complex oxides in energy-efficient spintronic devices. 相似文献
12.
Changsoo Kim Byong Sun Chun Jungbum Yoon Dongseuk Kim Yong Jin Kim In Ho Cha Gyu Won Kim Dae Hyun Kim Kyoung‐Woong Moon Young Keun Kim Chanyong Hwang 《Advanced Electronic Materials》2020,6(2)
The switching of magnetization via spin‐orbit torque has attracted much attention because of its fast switching and low power consumption. Numerous studies have focused on increasing the conversion efficiency from charge to spin current and out‐of‐plane magnetization cases. Recently, there have been reports on the fast and deterministic switching of in‐plane magnetization devices. It is reported that an in‐plane spin‐orbit torque (SOT) device can archive the oscillation, precession, and direct switching by a combination of torques—controlling the thickness of the ferromagnet and normal metal. With proper layer thicknesses, the device can show the three dynamics listed above at each current density in a macro spin simulation. Based on an understanding of the role of torque‐driving magnetization dynamics, a dynamic map of an in‐plane SOT device depending on torque efficiency and current density is shown. 相似文献
13.
Qikun Huang Yanan Dong Xiaonan Zhao Jing Wang Yanxue Chen Lihui Bai Ying Dai Youyong Dai Shishen Yan Yufeng Tian 《Advanced Electronic Materials》2020,6(3)
Voltage‐driven oxygen ion migration in ferromagnetic metal/oxide heterostructures offers a highly effective means to tailor emergent interfacial functionalities. In heterojunctions with a core structure of Pt/Co/CoO/TiO2 (TaOx), it is demonstrated that exchange coupling of magnetic moments across the Co/CoO interface provides an extra source to stabilize the perpendicular magnetic anisotropy (PMA). Moreover, the strength of this interfacial coupling can be reversibly controlled through voltage‐driven oxygen ion migration at the Co/CoO interface, resulting in electrical‐field‐controllable PMA. In combination with the spin current generated from Pt, it is revealed that the spin‐orbit torque (SOT) switching of the perpendicular magnetization of Co can be turned ON/OFF by electrical field. Tunable PMA and SOT switching makes heavy metal/ferromagnetic metal/antiferromagnetic oxide heterojunctions a promising candidate to future voltage‐controlled, ultralow‐power, and high‐density spintronics devices. 相似文献
14.
Jijun Yun Baoshan Cui Qirui Cui Xiaodong He Yuhan Chang YingMei Zhu Ze Yan Xi Guo Hongfei Xie Jianrong Zhang Qiaoning Bai Yongbo Zhai Hengyi Xu Yalu Zuo Dezheng Yang Chenglong Jia Guoqiang Yu Hao Wu Hongxin Yang Desheng Xue Li Xi 《Advanced functional materials》2023,33(33):2301731
The interfacial Dzyaloshinskii–Moriya interaction (DMI) in ferromagnetic/non-magnetic-metal bilayers is essential to stabilize chiral spin textures for potential applications. Recent works reveal that the interlayer DMI is beneficial to designing 3D chiral spin textures that possess fundamental importance and the associated technological promises. Here, the interlayer DM constants are determined quantitatively in synthetic ferromagnetic/antiferromagnetic Pt/Co/Pt/Ru/Pt/Co/Ta structures. The results demonstrate that the interlayer DMI shows uniaxial anisotropic characteristics. The first-principles calculations elucidate that the anisotropic interlayer DMI is induced by the in-plane symmetry breaking along two high symmetric directions, which favors the magnetization of adjacent ferromagnetic layers canting in different directions. The anisotropic interlayer DMI is also confirmed by spin-orbit torque driven asymmetric magnetization switching. Moreover, the interlayer DMI can be tuned by the Ru-layer-thickness and beneficial to designing 3D spin textures for future spintronic devices. 相似文献
15.
Yutao Tang;Zixian Hu;Junhong Deng;Kingfai Li;Guixin Li 《光电进展(英文版)》2024,7(12):240138-1-240138-9
Light beams carrying multiple orbital angular momentum (OAM) states, which can be realized by the structured media with phase singularities, have attracted great attentions in the fields of high dimensional optical information processing. Alternatively, a simple uniaxial crystal can be used to simultaneously generate four OAM states of light through the second harmonic generation and cascaded optical spin–orbit interaction (SOI) processes. However, two of the OAM states realized in the crystal are very weak and limit the practical applications. Here, we aim to circumvent this constraint by using the sequential optical SOI processes in two crystals with threefold rotational symmetry. Four angular momentum states of the fundamental waves are prepared after the first crystal and then are utilized to generate the corresponding second harmonic waves (SHWs) with opposite spin and doubled OAM in the second crystal. Further through a sequential SOI process, totally eight angular momentum states of the SHWs with nearly equal energy are experimentally observed. The proposed methodology may find potential applications in optical communications, parallel optical computing, optical manipulation and so on. 相似文献
16.
《Organic Electronics》2014,15(1):240-244
We studied the spin polarization phenomenon of injected charges in organic thiophene oligomer by using extended Su–Schrieffer–Heeger (SSH) model including electron–electron interaction, spin–orbit coupling as well as spin-flip effect. Our simulation shows that a charged carrier is spontaneously spin polarized, which has a lower energy than the non-polarized one. This polarization is related with the amount of injected charges and the polymerization of the molecule. 相似文献
17.
Yuying Yang Alei Li Mengmeng Wei Youpin Gong Wei Qin 《Advanced Electronic Materials》2021,7(11):2100548
The understanding of interlayer couplings should be paid much more attention owing to their importance in 2D materials with different layers. Here, through changing the number of layers, the tunability of interlayer coupling by external magnetic field in 2D material based field effect transistors is studied. External magnetic field can increase triplet electron-hole (e-h) pairs to promote interlayer coupling, where larger source-drain current is induced. Moreover, increasing the gate voltage or source-drain voltage, dipole–dipole interaction among the layers will be enhanced to weaken the tunability of source-drain current by magnetic field. This result reveals the magnetic field dependence of interlayer couplings in 2D materials and provides a guidance to develop new functional 2D material devices. 相似文献
18.
We present a model study of the effects of two mechanisms, the Rashba spin–orbit coupling and the spin-flip term, on the polaron spin inversion in an organic semiconductor. We find that, while both mechanisms can impact the polaron spin by changing the polaron level from a spin eigenstate to a spin superposition state, substantial difference can be observed in the static and dynamical properties of the polaron. Given the values of model parameters relevant to conjugated polymers, the magnitude of the polaron spin inversion caused by the spin–orbit coupling is much smaller than that by the spin-flip term. When the dynamical properties of the polaron are considered, spin oscillations induced by both mechanisms are observed when the polaron moves along the polymer chain driven by external electric field. Interestingly, the length of the polaron motion during one spin oscillation period remains constant in the case of spin–orbit coupling, while it is enhanced with increasing the driven electric field in the case of spin-flip term, in which larger spin diffusion length and longer spin relaxation time can be expected. 相似文献
19.
Hongyu An Satoshi Haku Yuito Kageyama Akira Musha Yuya Tazaki Kazuya Ando 《Advanced functional materials》2020,30(30)
External manipulation of spin‐orbit torques (SOTs) promises not only energy‐efficient spin‐orbitronic devices but also versatile applications of spin‐based technologies in diverse fields. However, the external electric‐field control, widely used in semiconductor spintronics, is known to be ineffective in conventional metallic spin‐orbitronic devices due to the very short screening length. Here, an alternative approach to control the SOTs by using gases is shown. It is demonstrated that the spin‐torque generation efficiency of a Pd/Ni81Fe19 bilayer can be reversibly manipulated by the absorption and desorption of H2 gas, which appears concomitantly with the change of the electrical resistance. It is found that compared with the change of the Pd resistance induced by the H2 absorption, the change of the spin‐torque generation efficiency is almost an order of magnitude larger. This result provides a new method to externally manipulate the SOTs and paves a way for developing more sensitive hydrogen sensors based on the spin‐orbitronic technology. 相似文献
20.
Emerging research in 2D materials has promoted the development of nanoelectronics. Ferromagnetic van der Waals (vdW) layered materials can be utilized to implement ultrathin spintronic devices with new functionalities. The theoretical investigation of 2D vdW scattering spin filters and magnetic tunnel junctions consisting of atomically thin Fe3GeTe2 (FGT) are reported. By the nonequilibrium Green's function technique, the spin polarization of ballistic transport through single‐/double‐layer FGT sandwiched between two Cu electrodes is predicted to be 53/85%. In ultrathin FGT‐hBN‐FGT heterostructures, remarkable magnetoresistance is observed, in which maximum (minimum) resistance occurs when the magnetization of two FGT layers is parallel (antiparallel) to each other. For heterostructures consisting of single‐/double‐layer FGT, the magnetoresistance reaches 183/252% at zero‐bias limit. The parallel state of a FGT magnetic tunnel junction exhibits spin polarization larger than 75%. These results suggest the application of magnetic vdW layered materials in ultrathin spintronics. 相似文献