Localized Laser‐Based Photohydrothermal Synthesis of Functionalized Metal‐Oxides

We discuss the rapid in situ hydrothermal synthesis of metal oxide materials based on the photothermal superheating of light‐absorbing metal layers for simple and facile on‐demand placement of semiconductor materials with micrometer‐scale lateral resolution. Localized heating from pulsed and focused laser illumination enables ultrafast growth of metal oxide materials with high spatiotemporal precision in aqueous precursor solution. Among many possible electronic and optoelectronic applications, the proposed method can be used for laser‐based in situ real‐time soldering of separated metal structures and electrodes with functionalized semiconductor materials. Resistive electrical interconnections of metal strip lines as well as sensitive UV detection using photohydrothermally grown metal oxide bumps are experimentally demonstrated.     

Ⅲ-Ⅴ族化合物超薄层外延生长新技术——原子层外延

本文概述了Ⅲ-Ⅴ族化合物原子层外延(ALE),重点介绍了脉冲喷射(PJ)-ALF、氯化物-ALE和增强迁移外延(MEE)。ALE生长层厚度对生长参数,如源气体分压、生长温度和生长时间都不敏感,主要取决于ALE周期数目,因此ALE又称“数字外延”。与传统的MBE和MOCVD相比,ALE具有生长层厚度更均匀、缺陷密度更低、选择外廷中无边缘生长以及侧壁外延可控制到单原子层等优点。文中还讨论了ALEⅢ-Ⅴ族化合物电学性能和应用。     

Bioinspired Controllable Electro‐Chemomechanical Coloration Films

Coloration materials and devices with broad manipulatable color spectra and precisely controllable capability are highly pursued in various applications, such as camouflage engineering, optical sensors, anticounterfeiting technology, real‐time monitoring, and so on. For achieving the goals, in the present work, a conceptually novel bioinspired coloration film is demonstrated using nanoscale amorphous silicon (a‐Si) layer deposited on a reflective metal substrate. With precisely manipulating the reversible lithiation/delithiation behaviors, such coloration films enable to present consecutively tunable chromogenic property in a broad visible band, since the simultaneous changes in both chemical components and film thickness upon electrochemical processes substantially vary the conditions of destructive interference. Accordingly, the corresponding model based on electro‐chemomechanical coupling effects confirms the coloration mechanism induced by thickness and intrinsic properties (refraction index and optical absorptivity). Additionally, such coloration films also suggest universal design ability, namely tailoring the coloration spectra via simply changing film thicknesses and metal substrates. Thus, the results promise a versatile strategy for fabricating advanced coloration materials and devices that are pursued in specular reflection, sensing, anticounterfeiting, labels, displaying, and sensors.     

Research progress of Ge on insulator grown by rapid melting growth

Ge is an attractive material for Si-based microelectronics and photonics due to its high carries mobility, pseudo direct bandgap structure, and the compatibility with complementary metal oxide semiconductor (CMOS) processes. Based on Ge, Ge on insulator (GOI) not only has these advantages, but also provides strong electronic and optical confinement. Recently, a novel technique to fabricate GOI by rapid melting growth (RMG) has been described. Here, we introduce the RMG technique and review recent efforts and progress in RMG. Firstly, we will introduce process steps of RMG. We will then review the researches which focus on characterizations of the GOI including growth dimension, growth mechanism, growth orientation, concentration distribution, and strain status. Finally, GOI based applications including high performance metal–oxide–semiconductor field effect transistors (MOSFETs) and photodetectors will be discussed. These results show that RMG is a promising technique for growth of high quality GOIs with different characterizations. The GOI grown by RMG is a potential material for the next-generation of integrated circuits and optoelectronic circuits.     

Over 1.1 eV Workfunction Tuning of Cesium Intercalated Metal Oxides for Functioning as Both Electron and Hole Transport Layers in Organic Optoelectronic Devices

In this paper, over 1.1 eV continuous tuning of metal oxides workfunction is realized by cesium intercalation, making the metal oxide function as both electron transport layer and hole transport layer in organic optoelectronic devices. The demonstrated metal oxides are commonly used molybdenum oxide and vanadium oxide. The proposed approach of synthesizing cesium intercalated metal oxides has interesting properties of room‐temperature, ambient atmosphere, water free and solution process, favoring the formation of metal oxides as carrier transport layers at different regions in multilayered devices and large scale fabrication of organic optoelectronics at low cost. Besides the wide range of controllable workfunction adjustment, band structures, and electrical properties are investigated in detail, to understand the effects of cesium intercalation on metal oxides. The device results show that, using the proposed cesium intercalation approach, each of the two investigated metal oxides can function as both ETL and HTL in organic solar cells and organic light emitting diodes with very good device performances. Consequently, with the interesting properties in film synthesis, the proposed cesium intercalated metal oxides can achieve continuously workfunction tuning over a large range and contribute to evolution of the simple route for fabricating high performance organic optoelectronic devices.     

Measurement and control of a residual oxide layer on TiSi2 films employed in ohmic contact structures

An inadvertent oxide layer is formed on a titanium disilicide (TiSi₂) film following various wet and dry processes in a manufacturing environment. The use of H₂SO₄:H₂O₂:H₂O (1:1:5) as a wet etch for excess Ti metal, prior to the high temperature anneal used to form a subsequent TiSi₂ layer, is identified as the source of the undesired oxide via multiwavelength spectroscopic ellipsometry and Auger electron spectrometry studies. This inadvertent oxide layer on TiSi₂ is shown to form bad electrical contacts and is a contributing source to large standby currents in polysilicon gate shunts. Spectroscopic ellipsometry is shown herein as a unique analytical tool to determine both the thickness and structure of this poorly structured oxide during process development. A single wavelength ellipsometer monitoring scheme for both the appearance as well as the thickness of this inadvertent oxide layer is proposed for use in high-volume manufacturing     

Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

Semiconductor‐based photodetectors (PDs) convert light signals into electrical signals via the photoelectric effect, which involves the generation, separation, and transportation of the photoinduced charge carriers, as well as the extraction of these charge carriers to external circuits. Because of their specific electronic and optoelectronic properties, metal oxide semiconductors are widely used building blocks in photoelectric devices. However, the compromise between enhancing the photoresponse and reducing the rise/decay times limits the practical applications of PDs based on metal oxide semiconductors. As the behaviors of the charge carriers play important roles in the photoelectric conversion process of these PDs, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge‐carrier behaviors and improve the photoelectric performance of related PDs. This review aims to introduce and summarize the latest researches on enhancing the photoelectric performance of PDs based on metal oxide semiconductors via charge‐carrier engineering, and proposes possible opportunities and directions for the future developments of these PDs in the last section.     

Facile Doping and Work‐Function Modification of Few‐Layer Graphene Using Molecular Oxidants and Reductants

Doping of graphene is a viable route toward enhancing its electrical conductivity and modulating its work function for a wide range of technological applications. In this work, the authors demonstrate facile, solution‐based, noncovalent surface doping of few‐layer graphene (FLG) using a series of molecular metal‐organic and organic species of varying n‐ and p‐type doping strengths. In doing so, the authors tune the electronic, optical, and transport properties of FLG. The authors modulate the work function of graphene over a range of 2.4 eV (from 2.9 to 5.3 eV)—unprecedented for solution‐based doping—via surface electron transfer. A substantial improvement of the conductivity of FLG is attributed to increasing carrier density, slightly offset by a minor reduction of mobility via Coulomb scattering. The mobility of single layer graphene has been reported to decrease significantly more via similar surface doping than FLG, which has the ability to screen buried layers. The dopant dosage influences the properties of FLG and reveals an optimal window of dopant coverage for the best transport properties, wherein dopant molecules aggregate into small and isolated clusters on the surface of FLG. This study shows how soluble molecular dopants can easily and effectively tune the work function and improve the optoelectronic properties of graphene.     

InP基MOCVD及MBE外延生长HBT的制备与分析

设计并研制了用于光电集成(OEIC)的InP基异质结双极晶体管(HBT),介绍了工艺流程及器件结构。分别采用金属有机化学气相沉积(MOCVD)及分子束外延(MBE)生长的外延片,并在外延结构、工艺流程相同的条件下,对两种生长机制的HBT直流及高频参数进行和分析。结果表明,采用MOCVD生长的InP基HBT,直流增益为30倍,截止频率约为38GHz;MBE生长的HBT,直流增益达到100倍,截止频率约为40GHz。这表明,MBE生长的HBT外延层质量更高,在相同光刻条件下,所对应的HBT器件的性能更好。     

Metallo‐Hydrogel‐Assisted Synthesis and Direct Writing of Transition Metal Dichalcogenides

Two dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted interest for their compelling nanoscale new properties and numerous potential applications including fast optoelectronic devices, ultrathin photovoltaics, and high‐performance catalysts. Large‐scale growth of uniform TMDC materials is essential for investigating their physics and for their integration into devices. However, the wafer scale deposition of TMDCs on arbitrary nonselective substrates is still beyond the current state‐of‐the‐art. In this article, a method to synthesize layered TMDCs (MoS₂ and WS₂) at the wafer‐scale by sulfurization of transition metal ions (Mo⁵⁺ and W⁶⁺) in a gelatin template (metallo‐hydrogel) is reported. This process is adaptable to versatile substrates, including amorphous silicon oxide, high‐temperature quartz, and silicon. Although the products are nominally few layer materials, direct band photoluminescent (≈1.8 eV), similar to single‐ or decoupled multilayer MoS₂ is observed. Finally, the solution‐based deposition enables contact printing of TMDC channels to be useable for device applications including thin film transistors with printed silver contacts using the same process.     

金属结的三次谐波特性分析

基于金属结的势垒模型, 分析了金属结的再辐射过程, 详细分析了金属结上直流偏置电压的动态平衡过程.给出了到达平衡状态之后, 金属结上的三次谐波电流分量的表达式.此外, 从金属结的角度出发, 经过详细的数值分析, 讨论了金属结的再辐射特性中影响三次谐波电流分量大小的因素.理论和仿真结果表明:当金属结的势垒宽度较大、金属与氧化层的接触面积较小、或金属与氧化层接触面的势垒高度较大时, 能够获得较小的三次谐波电流分量.最后, 通过实验测试验证, 金属与氧化层的接触面积较小或金属与氧化物接触面的势垒高度较大时, 三次谐波明显减弱.     

Direct Low‐Temperature Integration of Nanocrystalline Diamond with GaN Substrates for Improved Thermal Management of High‐Power Electronics

A novel approach for the direct synthetic diamond–GaN integration via deposition of the high‐quality nanocrystalline diamond films directly on GaN substrates at temperatures as low as 450–500 °C is reported. The low deposition temperature allows one to avoid degradation of the GaN quality, which is essential for electronic applications The specially tuned growth conditions resulted in the large crystalline diamond grain size of 100–200 nm without coarsening. Using the transient “hot disk” measurements it is demonstrated that the effective thermal conductivity of the resulting diamond/GaN composite wafers is higher than that of the original GaN substrates at elevated temperatures. The thermal crossover point is reached at ≈95–125 °C depending on the thickness of the deposited films. The developed deposition technique and obtained thermal characterization data can lead to a new method of thermal management of the high power GaN electronic and optoelectronic devices.     

Synthesis of a New Optoelectronic Material Based on Oriented Adsorption of Dyes to Nanoparticles Surface

Synthesis of the optoelectronic storage material with structure for coating by nanosized metal and azo-dye was reported. The characterization of composites was made by using transmission electron microscope （TEM）, ultraviolet-visible spectrometer （UV-Vis） and thermogravity analyzer （TGA）. It is found that, due to the specific structure, in which azo-dye molecules are oriented and adsorbed on the spherical surface of nanosized metal, the absorption maximum of azo-dye methyl orange shift towards shorter wavelength band. The experimental results show that the proposed technique here wouM offer a promising way to synthesize short wavelength optoelectronic storage material by doping of metal nanoparticles coated with dyes in polymer. Furthermore, the composites based on the structure can present excellent thermal properties suitable for the requirements of optical storage. This new type of material is capable of matching semiconductor laser （GaN） in optoelectronic storage technology.     

Recent progress in GeSn growth and GeSn-based photonic devices

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn content exceeds 6％. It shows great potential for laser use in optoelectronic integration circuits (OEIC) on account of its low light emission efficiency arising from the indirect bandgap characteristics of Si and Ge. The bandgap of GeSn can be tuned from 0.6 to 0 eV by varying the Sn content, thus making this alloy suitable for use in near-infrared and mid-infrared detectors. In this paper, the growth of the GeSn alloy is first reviewed. Subsequently, GeSn photodetectors, light emitting diodes, and lasers are discussed. The GeSn alloy presents a promising pathway for the monolithic integration of Si photonic circuits by the complementary metal–oxide–semiconductor (CMOS) technology.     

Laser Annealing-Induced Phase Transformation Behaviors of High Entropy Metal Alloy,Oxide, and Nitride Nanoparticle Combinations

High entropy materials made up of dissimilar elements have enormous potentials in various fields and applications such as catalysis, energy generation and bioengineering. Developments of facile rapid synthesis routes toward functional multicomponent nanoparticles (NPs) of metals and ceramics with control of single/mixed crystalline structure configurations as well as understanding their transformative behaviors to enable unexpected properties, however, has remained challenging. Here a transient laser heating strategy to generate high entropy metal alloy, oxide, and nitride nanoparticles (HE-A/O/N NPs) is described. Laser irradiation of the identical metal salt mixture under different millisecond heating times provides direct control of cooling rates and thereby results in HEA NPs with tunable single- and multiphasic solid solution characteristics, atomic compositions, nanoparticle morphologies, and physicochemical properties. Extending the elemental selection to nitride-forming precursors enables laser-induced carbothermal reduction and nitridation of high entropy tetragonal rutile oxide nanoparticlesNPs to the cubic rock salt nitride phase. The combination of laser heating with spatially resolved X-ray diffraction facilitates combinatorial studies of phase transitions and reaction pathways of multicomponent nanoparticles. These findings provide a general strategy to design nonequilibrium multicomponent metal alloys and ceramic materials amalgamations for fundamental studies and practical applications such as carbon nanotube growth, water splitting, and antimicrobial applications.     

Centimeter‐Scale and Visible Wavelength Monolayer Light‐Emitting Devices

Monolayer 2D transition metal dichalcogenides (TMDCs) have shown great promise for optoelectronic applications due to their direct bandgaps and unique physical properties. In particular, they can possess photoluminescence quantum yields (PL QY) approaching unity at the ultimate thickness limit, making their application in light‐emitting devices highly promising. Here, large‐area WS₂ grown via chemical vapor deposition is synthesized and characterized for visible (red) light‐emitting devices. Detail optical characterization of the synthesized films is performed, which show peak PL QY as high as 12%. Electrically pumped emission from the synthetic WS₂ is achieved utilizing a transient‐mode electroluminescence device structure, which consists of a single metal–semiconductor contact and alternating gate fields to achieve bipolar emission. Utilizing this aforementioned structure, a centimeter‐scale ( ≈ 0.5 cm²) visible (640 nm) display is demonstrated, fabricated using TMDCs to showcase the potential of this material system for display applications.     

利用复振幅滤波器实现激光作用区温度均匀化的理论分析

理应用连续激光诱导金属膜或氧化膜层的过程中,由于激光焦斑光强呈高斯分布,致使材料表面激光作用区温度场分布成类高斯型,梦或的馥膜厚度正均匀、金属导线加宽,故直接利用高斯光束不能满足激光诱导技术对光束作用区温度均匀性的要求。文中利用复振幅滤波器对人射高斯光束的振幅和相位进行调制实现作用区光场均匀化的结果,模拟了在材料表面产生的温度分布。模拟结果显示,高斯光束通过复振幅滤波器后,光束作用区内温度场的分布均匀性良好,并且光斑半径范围内外温差显著,可以满足诱导技术对光束质量的要求。     

Crystallization of 2D Hybrid Organic–Inorganic Perovskites Templated by Conductive Substrates

2D hybrid organic–inorganic perovskites are valued in optoelectronic applications for their tunable bandgap and excellent moisture and irradiation stability. These properties stem from both the chemical composition and crystallinity of the layer formed. Defects in the lattice, impurities, and crystal grain boundaries generally introduce trap states and surface energy pinning, limiting the ultimate performance of the perovskite; hence, an in-depth understanding of the crystallization process is indispensable. Here, a kinetic and thermodynamic study of 2D perovskite layer crystallization on transparent conductive substrates are provided—fluorine-doped tin oxide and graphene. Due to markedly different surface structure and chemistry, the two substrates interact differently with the perovskite layer. A time-resolved grazing-incidence wide-angle X-ray scattering (GIWAXS) is used to monitor the crystallization on the two substrates. Molecular dynamics simulations are employed to explain the experimental data and to rationalize the perovskite layer formation. The findings assist substrate selection based on the required film morphology, revealing the structural dynamics during the crystallization process, thus helping to tackle the technological challenges of structure formation of 2D perovskites for optoelectronic devices.     

Study of Scaling Trends in Energy Recovery Logic: An Analytical Approach

This paper presents an analytical model to study the scaling trends in energy recovery logic. The energy performance of conventional CMOS and energy recovery logic are compared with scaling the design and technology parameters such as supply voltage, device threshold voltage and gate oxide thickness. The proposed analytical model is validated with simulation results at 90 nm and 65 nm CMOS technology nodes and predicts the scaling behavior accurately that help us to design an energy-efficient CMOS digital circuit design at the nanoscale. This research work shows the adiabatic switching as an ultra-low-power circuit technique for sub-100 nm digital CMOS circuit applications.