Proton Conduction in Dense and Porous Nanocrystalline Ceria Thin Films

The electrical conductivity of ceria thin films (epitaxial as well as dense and porous nanocrystalline) is investigated in dry and wet atmosphere at temperatures below 500 °C. For the epitaxial and the fully dense nanocrystalline samples, no significant differences can be observed between dry and wet conditions. In marked contrast, the nanocrystalline porous films obtained via spin coating exhibit a considerable enhancement of the protonic conductivity below 300 °C in wet atmosphere. This outcome reveals that the residual open mesoporosity plays the key role for the enhancement of the proton transport at low temperatures and not the high density of grain boundaries. The quantitative analysis of the various pathways, along which the proton transport can take place, indicates that the observed proton conduction can arise not only from bulk water adsorbed in the open pores but also from the space charge zones on the water side of the water/oxide interface.     

On Proton Conductivity in Porous and Dense Yttria Stabilized Zirconia at Low Temperature

The electrical conductivity of dense and nanoporous zirconia‐based thin films is compared to results obtained on bulk yttria stabilized zirconia (YSZ) ceramics. Different thin film preparation methods are used in order to vary grain size, grain shape, and porosity of the thin films. In porous films, a rather high conductivity is found at room temperature which decreases with increasing temperature to 120 °C. This conductivity is attributed to proton conduction along physisorbed water (Grotthuss mechanism) at the inner surfaces. It is highly dependent on the humidity of the surrounding atmosphere. At temperatures above 120 °C, the conductivity is thermally activated with activation energies between 0.4 and 1.1 eV. In this temperature regime the conduction is due to oxygen ions as well as protons. Proton conduction is caused by hydroxyl groups at the inner surface of the porous films. The effect vanishes above 400 °C, and pure oxygen ion conductivity with an activation energy of 0.9 to 1.3 eV prevails. The same behavior can also be observed in nanoporous bulk ceramic YSZ. In contrast to the nanoporous YSZ, fully dense nanocrystalline thin films only show oxygen ion conductivity, even down to 70 °C with an expected activation energy of 1.0 ± 0.1 eV. No proton conductivity through grain boundaries could be detected in these nanocrystalline, but dense thin films.     

基于FPGA视频处理的低温设计缺陷分析与排除

通过对工业级显示器在低温试验中出现图像上下抖动故障的原因进行分析,指出其视频处理板电路设计缺陷,根据分析提出解决方案.经随后的低温试验证明,提出解决方案可以有效地解决图像上下抖动故障.同时表明了同步电路设计思想在FPGA程序设计中的重要性.     

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

The growth mechanism of indium oxide (In₂O₃) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100–300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline In₂O₃ layers via a vapor phase‐like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of In₂O₃ are grown over large area substrates at temperatures as low as 252 °C. Thin‐film transistors (TFTs) fabricated using these optimized In₂O₃ layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm² V^?1 s^?1, a value amongst the highest reported to date for solution‐processed In₂O₃ TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large‐volume manufacturing of high‐performance metal oxide thin‐film transistor electronics.