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利用椭偏光谱术与XRD对钛掺杂Ge2Sb2Te5薄膜中钛元素对体系的光学性质及其微结构的影响进行了实验研究。进而对该薄膜进行的变温阻抗实验表明,钛掺杂Ge2Sb2Te5薄膜与未掺杂的薄膜相比具有更好的热稳定性。基于对薄膜样品的数据保持能力测试的实验数据,经阿伦纽斯外推处理可知,钛掺杂Ge2Sb2Te5薄膜样品的10年数据保持温度要高于未掺杂Ge2Sb2Te5薄膜样品。本文的实验结果均证实,钛掺杂Ge2Sb2Te5薄膜更适合应用于相变随机存取存储器中。 相似文献
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研究了溅射参数对 Ge2 Sb2 Te5 薄膜的光学常数随波长变化关系的影响 ,结果表明 :(1)当溅射功率一定时 ,随溅射氩气气压的增加 Ge2 Sb2 Te5 薄膜的折射率先增大后减小 ,而消光系数先减小后增大 .(2 )当溅射氩气气压一定时 ,对于非晶态薄膜样品 ,在 5 0 0 nm波长以下 ,折射率随溅射功率的增加先增加后减小 ,消光系数则逐渐减小 ;在 5 0 0 nm以上 ,折射率随溅射功率的增加逐渐减少 ,消光系数先减小后增加 .对于晶态薄膜样品 ,在整个波长范围折射率随溅射功率的增加先减小后增加 ,消光系数则逐渐减少 .(3)薄膜样品的光学常数都随波长的变化而变化 ,在长波 相似文献
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利用椭偏仪和光谱仪研究了结晶程度对Ge2Sb2Te5相变薄膜光学常数的影响.当初始化仪转速固定时,随激光功率的增加,折射率基本随之减小,消光系数逐渐增大,透过率逐渐减小;当激光功率固定时,随转速的增大,折射率也随之增大,消光系数随之减小,透过率逐渐增加.非晶态与晶态间的变换、薄膜微结构的变化(包括原子间键合状态的变化)以及薄膜内残余应力是影响Ge2Sb2Te5相变薄膜复数折射率的主要原因.测量了CD-RW(可擦重写光盘)中Ge2Sb2Te5薄膜非晶态和晶态的反射率. 相似文献
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硫族化合物合金GeSbTe(GST)和AgInSbTe等相变材料(PCM)已经在光存储技术中得到广泛的应用,用相变电存储器件作为闪存的替代产品已成为国内外研究的热点.与此同时,相变材料在一些领域也取得了新的应用.总结了近年来国内外在相变材料的存储机制、光/电存储性能的改进以及新应用等方面的最新研究成果,并展望了相变材料的研究前景. 相似文献
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从电化学角度研究了Ge2Sb2Te5薄膜在化学机械抛光液中的作用,以及不同的pH值和H2O2浓度下的电化学特性. 采用Solartron SI1287电化学设备测试了Ge2Sb2Te5薄膜在溶液中的开路电位和动电位扫描. 开路电位结果表明:Ge2Sb2Te5在pH值为10的抛光液中表现出钝化行为;而抛光液的pH值为11时,开始向活化转变;当pH值为12时,薄膜处于活化状态. 在动电位扫描过程中,不同的pH值和H2O2浓度下,薄膜的扫描曲线形状相似,表明薄膜腐蚀具有相同的反应机理. 自制碱性抛光液,对Ge2Sb2Te5薄膜进行化学机械抛光,用SEM和EDS对抛光后的结构进行分析. 结果表明,通过CMP实现了Ge2Sb2Te5填充结构. 相似文献
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Omar A. M. Abdelraouf Aravind P. Anthur Zhaogang Dong Hailong Liu Qian Wang Leonid Krivitsky Xiao Renshaw Wang Qi Jie Wang Hong Liu 《Advanced functional materials》2021,31(48):2104627
Hybrid dielectric metasurfaces have emerged as a promising approach to enhancing near field confinement and thus high optical nonlinearity by utilizing low loss dielectric rather than relatively high loss metallic resonators. A wider range of applications can be realized if more design dimensions can be provided from material and fabrication perspectives to allow dynamic control of light. Here, tunable third harmonic generation (THG) via hybrid metasurfaces with phase change material Ge2Sb2Te5 (GST) deposited on top of amorphous silicon metasurfaces is demonstrated. Fano resonance is excited to confine the incident light inside the hybrid metasurfaces, and an experimental quality factor (Q-factor ≈ 125) is achieved at the fundamental pump wavelength around 1210 nm. Not only the switching between a turn-on state of Fano resonance in the amorphous state of GST and a turn-off state in its crystalline state are demonstrated, but also gradual multistate tuning of THG emission at its intermediate states. A high THG conversion efficiency of η = 2.9 × 10−6% is achieved, which is 32 times more than that of a GST-based Fabry–Pèrot cavity under a similar pump laser power. Experimental results show the potential of exploring GST-based hybrid dielectric metasurfaces for tunable nonlinear optical devices. 相似文献
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采用射频磁控溅射方法,分别在玻璃和具有本征氧化层的Si(100)基片上制备了Ge2Sb2Te5相变薄膜。利用X射线衍射仪、扫描电镜(SEM)、原子力显微镜(AFM)、紫外分光光度计等对薄膜进行了表征,研究了不同生长温度(室温~300℃)的Ge2Sb2Te5薄膜的表面形貌和结晶特性。分析结果表明:室温沉积的薄膜为非晶态;沉积温度为100℃~250℃时,薄膜转变为晶粒尺度约14nm的面心立方结构;300℃~350℃沉积的薄膜有少量的六方相出现。薄膜表面粗糙度随着沉积温度的升高逐渐递增,且薄膜的反射率变化与表面粗糙度有直接的关系。 相似文献
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Design Method of Tunable Pixel with Phase‐Change Material for Diffractive Optical Elements 下载免费PDF全文
Seung‐Yeol Lee Han Na Kim Yong Hae Kim Tae‐Youb Kim Seong‐Mok Cho Han Byeol Kang Chi‐Sun Hwang 《ETRI Journal》2017,39(3):390-397
In this paper, we propose a scheme for designing a tunable pixel layer based on a Ge2Sb2Te5 (GST) alloy thin film. We show that the phase change of GST can significantly affect the reflection characteristic when the GST film is embedded into a dielectric encapsulation layer. We investigate the appropriate positions of the GST film within the dielectric layer for high diffraction efficiency, and we prove that they are antinodes of Fabry–Perot resonance inside the dielectric layer. Using the proposed scheme, we can increase the diffraction efficiency by about ten times compared to a bare GST film pixel, and 80 times for the first‐to‐zeroth‐order diffraction power ratio. We show that the proposed scheme can be designed alternatively for a broadband or wavelength‐selective type by tuning the dielectric thickness, and we discuss a multi‐phase example with a double‐stack structure. 相似文献
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Hongbing Lu Erik Thelander Jürgen W. Gerlach Ulrich Decker Benpeng Zhu Bernd Rauschenbach 《Advanced functional materials》2013,23(29):3621-3627
Phase transformations between amorphous and crystallized states are induced by irradiation with a single nanosecond laser pulse in Ge2Sb2Te5 films grown by pulsed laser deposition. By adjusting the laser fluence, the two different phases are obtained and can be distinguished by their different optical reflectivity. The effect of laser fluence on the crystalline nature of the films is studied in detail. Large structural differences between the laser‐irradiated and thermally annealed films are revealed, due to the high heating rate and short duration of the laser pulse. X‐ray reflectivity measurements show a density increase of 3.58% upon laser‐induced crystallization. 相似文献
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从相变存储器(phase change random access memory,PCRAM)的基本结构和工作原理出发,首先介绍了PCRAM的技术优势、面临的技术挑战、常用的解决策略以及存在的相应问题;接着阐述了在微电子加工中广泛应用的关键工艺——侧墙技术,并将其在PCRAM中的应用成果进行了分类;然后从加热电极的制备、相变材料限制结构的制备、新相变材料的制备与表征和器件间互联等4个方面展开叙述;最后展望了该技术在相变存储领域应用发展的趋势。侧墙技术因其具备自对准的特点,制备工艺可控性好,制备精度不依赖于光刻精度,在纳米技术飞速发展的今天,侧墙技术将会在更高精度上发挥其作用。 相似文献
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只用两个量子态的星型量子密钥网络方案 总被引:4,自引:0,他引:4
要建立一个安全的保密通信通道,关键就是密钥管理。传统的密钥管理并不能完全解决安全问题,量子密码技术却可以从根本上解决这个问题。本文从实用的角度提出一个基于无源光学网络环境中建立量子密钥的实用方案,这个方法可以由一个网络控制者在一个星型网络上和多个网络用户分别建立、更新密钥。为节约量子探测设备,和通常用四个量子态的保密通信方案相比,这个方案只用了两个量子态。本文还分析了在网络的各个位置上存在窃听时网络的安全性能。 相似文献
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Sb2Te3基半导体合金是目前性能较好的热电半导体材料.将材料低维化处理可以获得较块状材料更大的热电优值.通过磁控溅射工艺制备低维Sb2Te3薄膜,并通过AFM、XRD和XPS测试方法对薄膜的成分、薄膜表面以及原子偏析进行表征.通过退火工艺去除薄膜应力,观察退火工艺前后薄膜表面形貌的变化以及退火温度对薄膜表面质量的影响.试验结果表明通过磁控溅射工艺所制备出的Sb2Te3薄膜为非晶态,随着溅射功率增大,薄膜的表面粗糙度增大.退火可使薄膜变为晶态,但是表面粗糙度增大.较大或较小溅射功率下所制备的薄膜其合金成分与合金靶材有较大偏差. 相似文献
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采用电场激活压力辅助烧结(FAPAS)技术制备了(Bi2Te3)0.2(Sb2Te3)0.8热电材料,采用无电场、低电场强度和高电场强度三种烧结方式作为对比实验,研究了烧结过程中施加电场强度对(Bi2Te3)0.2(Sb2Te3)0.8热电材料微观结构和热电性能的影响。研究结果表明,在烧结过程中施加电场,可明显提高(Bi2Te3)0.2(Sb2Te3)0.8热电材料的电导率和Seebeck系数,从而提高其综合电功率因子;而采用大电场强度烧结则会使(Bi2Te3)0.2(Sb2Te3)0.8材料出现层状结构择优取向,在电性能相对较高的情况下亦使其热导率明显减低,从而获得较高ZT值。 相似文献
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采用真空蒸镀法制备了以TeOx 薄膜为记录层的可录光盘 ,采用溅射法制备了以Ag In Sb Te O为记录层的可擦重写光盘 ,并测试了这两种光盘在波长为 5 14 .5nm的动态存储特性。实验结果表明 ,可录光盘的载噪比在波长 5 14 5nm时达到 3 0dB ,波长 780nm时达到 41dB ;可擦重写光盘的载噪比在波长 5 14 5nm时达到 2 5dB ,波长 780nm时达到 3 8dB。对光盘载噪比偏低的可能原因及改进方法进行了讨论。光盘动态存储性能测试证明了这两种薄膜可用作蓝绿光波段高密度光存储介质。 相似文献
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Hao Sang Wei Wang Zhengzhou Wang Min Hong Cheng Zhang Sen Xie Haoran Ge Fan Yan Zhaohui Wang Yujie Ouyang Yong Liu Jinsong Wu Wei Liu Xinfeng Tang 《Advanced functional materials》2023,33(3):2210213
Interfacial charge transfer has a vital role in tailoring the thermoelectric performance of superlattices (SLs), which, however, is rarely clarified by experiments. Herein, based on epitaxially grown p-type (MnTe)x(Sb2Te3)y superlattice-like films, synergistically optimized thermoelectric parameters of carrier density, carrier mobility, and Seebeck coefficient are achieved by introducing interfacial charge transfer, in which effects of hole injection, modulation doping, and energy filtering are involved. Carrier transport measurements and angle-resolved photoemission spectroscopy (ARPES) characterizations reveal a strong hole injection from the MnTe layer to the Sb2Te3 layer in the SLs, originating from the work function difference between MnTe and Sb2Te3. By reducing the thickness of MnTe less than one monolayer, all electronic transport parameters are synergistically optimized in the quantum-dots (MnTe)x(Sb2Te3)12 superlattice-like films, leading to much improved thermoelectric power factors (PFs). The (MnTe)0.1(Sb2Te3)12 obtains the highest room-temperature PF of 2.50 mWm−1K−2, while the (MnTe)0.25(Sb2Te3)12 possesses the highest PF of 2.79 mWm−1K−2 at 381 K, remarkably superior to the values acquired in binary MnTe and Sb2Te3 films. This research provides valuable guidance on understanding and rationally tailoring the interfacial charge transfer of thermoelectric SLs to further enhance thermoelectric performances. 相似文献