2D Oxides Realized via Confinement Heteroepitaxy

Novel confinement techniques facilitate the formation of non-layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaO_x, InO_x, SnO_x) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaO_x with non-periodic oxygen in a crystalline Ga matrix via air oxidation at room temperature. However, crystalline monolayer GaO₂ and bilayer Ga₂O₃ with ferroelectric wurtzite structure(FE-WZ') can then be formed via subsequent high-temperature O₂ annealing. Furthermore, the graphene/X/SiC (X = 2D Ga or Ga₂O₃) junction is tunable from Ohmic to a Schottky or tunnel barrier depending on the interface species. Finally, using vertical transport measurements and electron energy loss spectroscopy analysis, the bandgap of 2D gallium oxide is identified as 6.6 ± 0.6 eV, significantly larger than that of bulk β-Ga₂O₃ (≈4.8 eV), suggesting strong quantum confinement effects at the 2D limit. The study presented here is foundational for development of atomic-scale, vertical 2D/3D heterostructure for applications requiring short transit times, such as GHz and THz devices.     

Domain Controlling by Compound Additive toward Highly Efficient Quasi-2D Perovskite Light-Emitting Diodes

Quasi-2D perovskites with enlarged exciton binding energy and tunable bandgap are appealing for application in perovskite light-emitting diodes (PeLEDs). However, wide n domains distribution is commonly formed in solution-processed quasi-2D perovskite films due to the uncontrollable crystallization behavior, which leads to low device performance. Here, the crystallization process is successfully regulated to narrow the n domains distribution by introducing compound additive of ZrO₂ nanoparticles (NPs) and Cryptand complexant. ZrO₂ NPs can avoid the segregation of organic large and small cations by strengthening the solvent extraction capacity of antisolvent, while Cryptand offsets the poor solubility of PbBr₂ by forming an intermediate state to slow down the crystallization of high-n domains. Consequently, both high photoluminescence quantum yields over 90% and a high external quantum efficiency of 21.2% are obtained in the optimized green quasi-2D PeLEDs. Moreover, the lifetime extends about four times compared with control devices. The strategy of domain controlling by compound additive provides a powerful way to develop high-performance quasi-2D perovskite optoelectrical devices.     

Efficient Blue Perovskite Light‐Emitting Diodes Boosted by 2D/3D Energy Cascade Channels

Lead halide perovskite, as an emerging semiconductor, provides a fire‐new opportunity for high‐definition display and solid‐state lighting. Earthshaking improvements are implemented in green, red, and near‐infrared perovskite light‐emitting diodes (PeLEDs). However, blue PeLEDs are still far behind in performance, which restricts the development of PeLEDs in practical applications. Herein, a facile energy cascade channel strategy via one‐step self‐organized and controllable 2D/3D perovskite preparation by introducing guanidine hydrobromide (GABr) is developed that greatly improves the efficiency of blue PeLEDs. The 2D/3D perovskite structure boosts the energy cascade to induce energy transfer from the wide into the narrow bandgap domains and inhibit free charge diffusion, which increases the density of electrons and holes, and enhances the radiative recombination. Profiting from this energy cascade channels, the external quantum efficiency of blue PeLEDs, emitting at 492 nm, is considerably enhanced from 1.5% of initial blue device to 8.2%. In addition, device operating stability under ambient conditions is also improved by 2.6‐fold. The one‐step self‐organized 2D/3D hybrid perovskites induced by GABr pave a new and simple route toward high‐performance blue emission PeLEDs.     

2D/2D 1T‐MoS2/Ti3C2 MXene Heterostructure with Excellent Supercapacitor Performance

2D/2D heterostructures can combine the collective advantages of each 2D material and even show improved properties from synergistic effects. 2D Transition metal carbide Ti₃C₂ MXene and 2D 1T‐MoS₂ have emerged as attractive prototypes in electrochemistry due to their rich properties. Construction of these two 2D materials, as well as investigation about synergistic effects, is absent due to the instability of 1T‐MoS₂. Here, 3D interconnected networks of 1T‐MoS₂/Ti₃C₂ MXene heterostructure are constructed by magneto‐hydrothermal synthesis, and the electrochemical storage mechanisms are investigated. Improved extra capacitance is observed due to enlarged ion storage space from a synergistically interplayed effect in 3D interconnected networks. Outstanding rate performance is realized because of ultrafast electron transport originating from Ti₃C₂ MXene. This work provides an archetype to realize excellent electrochemical properties in 2D/2D heterostructures.     

Large‐Area Synthesis of Continuous and Uniform MoS2 Monolayer Films on Graphene

Heterostructures composed of multiple layers of different atomically thin materials are of interest due to their unique properties and potential for new device functionality. MoS₂‐graphene heterostructures have shown promise as photodetectors and vertical tunnel transistors. However, progress is limited by the typically micrometer‐scale devices and by the multiple alignments required for fabrication when utilizing mechanically exfoliated material. Here, the synthesis of large‐area, continuous, and uniform MoS₂ monolayers directly on graphene by chemical vapor deposition is reported, resulting in heterostructure samples on the centimeter scale with the possibility for even larger lateral dimensions. Atomic force microscopy, photoluminescence, X‐ray photoelectron, and Raman spectroscopies demonstrate uniform single‐layer growth of stoichiometric MoS₂. The ability to reproducibly generate large‐area heterostructures is highly advantageous for both fundamental investigations and technological applications.     

Holy Water: Photo-Brightening in Quasi-2D Perovskite Films under Ambient Enables Highly Performing Light-Emitting Diodes

Quasi-2D perovskites provide new opportunities for lighting and display applications due to their high radiative recombination and excellent stability. However, seldom attention has been placed on their self-stability/working operation under ambient storage. Herein, quasi-2D perovskites/Polyethylene oxide (PEO) films are studied, showing an unforeseen photo-brightening effect under ambient storage (i.e., an increase of the photoluminescence quantum yield from 55% to 74% after 100 days). In stark contrast, those stored under a dark/inert atmosphere show a significant decrease down to 38%. This counterintuitive phenomenon responds to the increasing radiative recombination rate caused by the passivation of the surface Br vacancies in the presence of physically adsorbed water molecules, as corroborated by in situ/ex situ X-ray photoelectron spectroscopy and density functional theory calculations. Capitalizing on this surprising effect, stable light-emitting diodes (LEDs) using quasi-2D perovskites/PEO color filters are fabricated, realizing high stabilities of ≈400 h@10 mA under operating ambient conditions, representing a 20-fold enhancement compared to LEDs with 3D counter partners. Hence, this study reveals a unique insight into the impact of water passivation on the optical/structural properties of quasi-2D perovskite films, broadening their applications under operating ambient conditions.     

Stacking of 2D Materials

2D layered materials have sparked great interest from the perspective of basic physics and applied science in the past few years. Extraordinarily, many novel stacked structures that bring versatile properties and applications can be artificially assembled, as exemplified by vertical van der Waals (vdW) heterostructures, twisted multilayer 2D materials, hybrid dimensional structures, etc. Compared with the ordinary synthesis process, the stacking technique is a powerful strategy to achieve high-quality and freely controlled 2D material stacked structures with atomic accuracy. This review highlights the most advanced stacking techniques involving the preparation, transfer, and stacking of high-quality single crystal 2D materials. Apart from the 2D–2D stacked structures, 2D–0D, 2D–1D, and 2D–3D structures offer a prospective platform for the increasing application of 2D materials. The assembly strategy and physical properties of these stacked structures strongly depend on the factors in the stacking process, including the surface quality, angle control, and sample size. In addition, comparative analysis tables on the techniques involved are also available. The summary of these strategies and techniques will hopefully provide a valuable reference for relevant work.     

Optoelectronics based on 2D TMDs and heterostructures

2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS₂, WS₂ and WSe₂ phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon.     

2D MoN1.2-rGO Stacked Heterostructures Enabled Water State Modification for Highly Efficient Interfacial Solar Evaporation

Improving interfacial solar evaporation performance is crucial for the practical application of this technology in solar-driven seawater desalination. Lowering evaporation enthalpy is one of the most promising and effective strategies to significantly improve solar evaporation rate. In this study, a new pathway to lower vaporization enthalpy by introducing heterogeneous interactions between hydrophilic hybrid materials and water molecules is developed. 2D MoN_1.2 nanosheets are synthesized and integrated with rGO nanosheets to form stacked MoN_1.2-rGO heterostructures with massive junction interfaces for interfacial solar evaporation. Molecular dynamics simulation confirms that atomic thick 2D MoN_1.2 and rGO in the MoN_1.2-rGO heterostructures simultaneously interact with water molecules, while the interactions are remarkably different. These heterogeneous interactions cause an imbalanced water state, which easily breaks the hydrogen bonds between water molecules, leading to dramatically lowered vaporization enthalpy and improved solar evaporation rate (2.6 kg m⁻² h⁻¹). This study provides a promising strategy for designing 2D-2D heterostructures to regulate evaporation enthalpy to improve solar evaporate rate for clean water production.     

Recent progress of the optoelectronic properties of 2D Ruddlesden-Popper perovskites

Two-dimensional(2 D) hybrid organic-inorganic perovskites have recently attracted attention due to their layered nature, naturally formed quantum well structure, large exciton binding energy and especially better long-term environmental stability compared with their three-dimensional(3 D) counterparts. In this report, we present a brief overview of the recent progress of the optoelectronic applications in 2 D perovskites. The layer number dependent physical properties of 2 D perovskites will first be introduced and then the different synthetic approaches to achieve 2 D perovskites with different morphologies will be discussed. The optical, optoelectronic properties and self-trapped states in 2 D perovskites will be described, which are indispensable for designing the new device structures with novel functionalities and improving the device performance. Subsequently, a brief summary of the advantages and the current research status of the 2 D perovskite-based heterostructures will be illustrated.Finally, a perspective of 2 D perovskite materials is given toward their material synthesis and novel device applications.     

Studying the Regimes of Silicon Surface Profiling by Focused Ion Beams

Russian Microelectronics - The regimes of submicron and nanosized profiling of the KDB-10 Si(100) wafer surface by the focused ion beam (FIB) technique are experimentally investigated. It is...     

2D Layered Material‐Based van der Waals Heterostructures for Optoelectronics

Van der Waals heterostructures (vdWHs) based on 2D layered materials with selectable materials properties pave the way to integration at the atomic scale, which may give rise to fresh heterostructures exhibiting absolutely novel physics and versatility. This feature article reviews the state‐of‐the‐art research activities that focus on the 2D vdWHs and their optoelectronic applications. First, the preparation methods such as mechanical transfer and chemical vapor deposition growth are comprehensively outlined. Then, unique energy band alignments generated in 2D vdWHs are introduced. Furthermore, this feature article focuses on the applications in light‐emitting diodes, photodetectors, and optical modulators based on 2D vdWHs with novel constructions and mechanisms. The recently reported novel constructions of the devices are introduced in three primary aspects: light‐emitting diodes (such as single defect light‐emitting diodes, circularly polarized light emission arising from valley polarization), photodetectors (such as photo‐thermionic, tunneling, electrolyte‐gated, and broadband photodetectors), and optical modulators (such as graphene integrated with silicon technology and graphene/hexagonal boron nitride (hBN) heterostructure), which show promising applications in the next‐generation optoelectronics. Finally, the article provides some conclusions and an outlook on the future development in the field.     

Air-Processed Blue Perovskite Light-Emitting Diodes Enabled by Manipulation of Adsorbed-Moisture-Dominated Crystallization Kinetics

The fabrication of blue perovskite light-emitting diodes (PeLEDs) in air conditions promises to liberate the manipulation procedures from the protection of inert atmosphere in the glovebox, which will remarkably promote the commercialization proceeding of perovskite-based optoelectronic devices in display applications. However, achieving air-processed blue PeLEDs in the interference of moisture meets great challenges in crystallization kinetics control. Herein, it is proposed that substrate-adsorbed moisture dominates the perovskite crystallization kinetics during the fabrication in air, and the limited moisture from nonhygroscopic substrate inhibits the nucleation of the large-n phase and allows the growth of the small-n phase, thus yielding blue quasi-2D perovskite films in a wide moisture range of 10–50% relative humidity. Then, air-processed blue PeLEDs are successfully achieved for the first time, showing a brightness of 968 cd m⁻², external quantum efficiency of 2.54% at stable peak emission of 483 nm, as well as an outstanding operating stability of 546 s at a peak brightness of 45 cd m⁻², which are favorably competitive with PeLEDs fabricated in the glovebox. This work provides a guideline for air-processed blue PeLEDs fabrication, which paves the way for air-processed PeLEDs in further application of commercialization display.     

Study of Ion Beam Including Deposition Modes of Platinum Nanosized Structures Using by Focused Ion Beams

The results of experimental studies of the Pt structure with the thickness ranging from (0.48 ± 0.1) to (24.38 ± 0.1) nm ion beam including deposition by focused ion beam are presented. The rate of ion beam including deposition of Pt, which depending on the modes varies from (0.28 ± 0.02) to (6.7 ± 0.5) nm/s, is determined experimentally. The deviation of Pt lateral structure sizes from those preset by the template decreases from (29.3 ± 0.07)% to (2.4 ± 0.2)% depending on the deposition duration. By the thicknesses of Pt nanosized structures larger than 3 nm, their specific resistance amounts to (23.4 ± 1.8) Ohm cm and weakly depends on the thickness. The results can be used for developing the technological processes used to form the structures of microelectronics sensorics, nanoelectronics, and nano- and microsystem engineering.     

2D Bi2O2Te Semiconductor with Single-Crystal Native Oxide Layer

Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface-sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi₂O₂Te developed recently is reported to possess large-area synthesis and controllable thermal oxidation behavior toward single-crystal native oxides. This shows that surface-adsorbed oxygen atoms are inclined to penetrate across [Bi₂O₂]_n²ⁿ⁺ layers and bond with the underlying [Te]_n²ⁿ⁻ at elevated temperatures, transforming directly into [TeO₄]_n²ⁿ⁻ with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer-by-layer manner with a low-stress sharp interface. The native oxide Bi₂TeO₆ layer (bandgap of ≈2.9 eV) exhibits visible-light transparency and is compatible with wet-chemical selective etching technology. These advances demonstrate the potential of Bi₂O₂Te in planar-integrated functional nanoelectronics such as tunnel junction devices, field-effect transistors, and memristors.     

Flexible High-Performance Photovoltaic Devices based on 2D MoS2 Diodes with Geometrically Asymmetric Contact Areas

Optoelectronic performance of 2D transition metal dichalcogenides (TMDs)-based solar cells and self-powered photodetectors remain limited due to fabrication challenges, such as difficulty in doping TMDs to form p–n junctions. Herein, MoS₂ diodes based on geometrically asymmetric contact areas are shown to achieve a high current rectification ratio of ≈10⁵, facilitating efficient photovoltaic charge collection. Under solar illumination, the device demonstrates a high open-circuit voltage (V_oc) of 430 mV and a short-circuit current density (J_sc) of −13.42 mA cm⁻², resulting in a high photovoltaic power conversion efficiency (PCE) of 3.16%, the highest reported for a lateral 2D solar cell. The diodes also show a high photoresponsivity of 490.3 mA W⁻¹, and a large photo detectivity of 4.05 × 10¹⁰ Jones, along with a fast response time of 0.8 ms under 450 nm wavelength at zero bias for self-powered photodetection applications. The device transferred on a flexible substrate shows a high photocurrent and PCE retentions of 94.4%, and 88.2% after 5000 bending cycles at a bending radius of 1.5 cm, respectively, demonstrating robustness for flexible optoelectronic applications. The simple fabrication process, superior photovoltaic properties, and high flexibility suggests that the geometrically asymmetric MoS₂ device architecture is an excellent candidate for flexible photovoltaic and optoelectronic applications.     

Nanosized Modification of the Silicon Surface by the Method of Focused Ion Beams

Russian Microelectronics - This paper presents the results of experimental studies of the modes of formation of nanosized structures on the surface of a silicon substrate by the method of focused...     

Strategies Toward Efficient Blue Perovskite Light-Emitting Diodes

Substantial progress has been made in blue perovskite light-emitting diodes (PeLEDs). In this review, the strategies for high-performance blue PeLEDs are described, and the main focus is on the optimization of the optical and electrical properties of perovskites. In detail, the fundamental device working principles are first elucidated, followed by a systematical discussion of the key issues for achieving high-quality perovskite nanocrystals (NCs) and quasi-2D perovskites. These involve ligand optimization and metal doping in enhancing the carrier transport and reducing the traps of perovskite NCs, as well as the perovskite phase modulation and defect passivation in improving energy transfer and emission efficiency of quasi-2D perovskites. The strategies for efficient 3D mixed-halide perovskite and lead-free perovskite blue LEDs are then briefly introduced. After that, other strategies, including effective charge transport layer, efficient perovskite emission system, and effective device architecture for high light outcoupling efficiency, are further discussed to boost the blue PeLED performances. Meanwhile, the testing standard of blue PeLED lifetime is suggested to enable the direct comparisons of the device operational stability. Finally, challenges and future directions for blue PeLEDs are addressed.     

Crystallization of 2D Hybrid Organic–Inorganic Perovskites Templated by Conductive Substrates

2D hybrid organic–inorganic perovskites are valued in optoelectronic applications for their tunable bandgap and excellent moisture and irradiation stability. These properties stem from both the chemical composition and crystallinity of the layer formed. Defects in the lattice, impurities, and crystal grain boundaries generally introduce trap states and surface energy pinning, limiting the ultimate performance of the perovskite; hence, an in-depth understanding of the crystallization process is indispensable. Here, a kinetic and thermodynamic study of 2D perovskite layer crystallization on transparent conductive substrates are provided—fluorine-doped tin oxide and graphene. Due to markedly different surface structure and chemistry, the two substrates interact differently with the perovskite layer. A time-resolved grazing-incidence wide-angle X-ray scattering (GIWAXS) is used to monitor the crystallization on the two substrates. Molecular dynamics simulations are employed to explain the experimental data and to rationalize the perovskite layer formation. The findings assist substrate selection based on the required film morphology, revealing the structural dynamics during the crystallization process, thus helping to tackle the technological challenges of structure formation of 2D perovskites for optoelectronic devices.     

Domain Distribution Management of Quasi-2D Perovskites toward High-Performance Blue Light-Emitting Diodes

Quasi-2D perovskites, as one of the promising materials applied in perovskite light-emitting diodes (PeLEDs), have attracted great attention for their superior semiconductor properties. The inherent multiquantum well structure can induce a strong confinement effect, which is especially suitable for blue emission. However, compared to their green counterparts, blue emitters constructed from quasi-2D perovskites are more sensitive to n domain distribution (where n represents the number of PbX₆ inorganic layers). Suffering from inefficient domain distribution management, blue PeLEDs now face a variety of negative issues, including color instability, multipeak emission, and poor fluorescence yield. In this review, the development of blue PeLEDs and the optical properties of quasi-2D perovskites are overviewed. Then, a classification and summary of strategies for domain distribution management are proposed. Finally, the challenges and potential directions of domain distribution management in quasi-2D perovskites are summarized. This review is expected to provide a comprehensive perspective and reference on domain distribution management toward efficient blue quasi-2D PeLEDs.