共查询到20条相似文献，搜索用时 15 毫秒
1.
Bablu Mukherjee Ryoma Hayakawa Kenji Watanabe Takashi Taniguchi Shu Nakaharai Yutaka Wakayama 《Advanced Electronic Materials》2021,7(1):2000925
A 2D heterostructure consisting of few-layer direct bandgap ReS2, a thin h-BN layer, and a monolayer graphene (Gr) for application to various electronic devices is investigated. Metal-insulator-semiconductor (MIS)-type devices with 2D van-der-Waals (vdW) heterostructures are recently studied as important components to realize various multifunctional device applications in analogue and digital electronics. The tunnel diodes of ReS2/h-BN/Gr exhibit light tunable rectifying behaviors with low ideality factors and nearly temperature independent electrical characteristics. The devices behave like conventional MIS-type tunnel diodes for logic gate applications. Furthermore, similar vertical heterostructures are shown to operate in field-effect transistors with a low threshold voltage and a memory device with a large memory gate for future multifunctional device applications. 相似文献
2.
Kathleen M. McCreary Aubrey T. Hanbicki Jeremy T. Robinson Enrique Cobas James C. Culbertson Adam L. Friedman Glenn G. Jernigan Berend T. Jonker 《Advanced functional materials》2014,24(41):6449-6454
Heterostructures composed of multiple layers of different atomically thin materials are of interest due to their unique properties and potential for new device functionality. MoS2‐graphene heterostructures have shown promise as photodetectors and vertical tunnel transistors. However, progress is limited by the typically micrometer‐scale devices and by the multiple alignments required for fabrication when utilizing mechanically exfoliated material. Here, the synthesis of large‐area, continuous, and uniform MoS2 monolayers directly on graphene by chemical vapor deposition is reported, resulting in heterostructure samples on the centimeter scale with the possibility for even larger lateral dimensions. Atomic force microscopy, photoluminescence, X‐ray photoelectron, and Raman spectroscopies demonstrate uniform single‐layer growth of stoichiometric MoS2. The ability to reproducibly generate large‐area heterostructures is highly advantageous for both fundamental investigations and technological applications. 相似文献
3.
Furkan Turker Chengye Dong Maxwell T. Wetherington Hesham El-Sherif Stephen Holoviak Zachary J. Trdinich Eric T. Lawson Gopi Krishnan Caleb Whittier Susan B. Sinnott Nabil Bassim Joshua A. Robinson 《Advanced functional materials》2023,33(5):2210404
Novel confinement techniques facilitate the formation of non-layered 2D materials. Here it is demonstrated that the formation and properties of 2D oxides (GaOx, InOx, SnOx) at the epitaxial graphene (EG)/silicon carbide (SiC) interface is dependent on the EG buffer layer properties prior to element intercalation. Using 2D Ga, it is demonstrated that defects in the EG buffer layer lead to Ga transforming to GaOx with non-periodic oxygen in a crystalline Ga matrix via air oxidation at room temperature. However, crystalline monolayer GaO2 and bilayer Ga2O3 with ferroelectric wurtzite structure(FE-WZ') can then be formed via subsequent high-temperature O2 annealing. Furthermore, the graphene/X/SiC (X = 2D Ga or Ga2O3) junction is tunable from Ohmic to a Schottky or tunnel barrier depending on the interface species. Finally, using vertical transport measurements and electron energy loss spectroscopy analysis, the bandgap of 2D gallium oxide is identified as 6.6 ± 0.6 eV, significantly larger than that of bulk β-Ga2O3 (≈4.8 eV), suggesting strong quantum confinement effects at the 2D limit. The study presented here is foundational for development of atomic-scale, vertical 2D/3D heterostructure for applications requiring short transit times, such as GHz and THz devices. 相似文献
4.
Petr Kovaricek Peter Nadazdy Eva Pluharova Alica Brunova Riyas Subair Karol Vegso Valentino Libero Pio Guerra Oleksandr Volochanskyi Martin Kalbac Alexander Krasnansky Pallavi Pandit Stephan Volker Roth Alexander Hinderhofer Eva Majkova Matej Jergel Jianjun Tian Frank Schreiber Peter Siffalovic 《Advanced functional materials》2021,31(13):2009007
2D hybrid organic–inorganic perovskites are valued in optoelectronic applications for their tunable bandgap and excellent moisture and irradiation stability. These properties stem from both the chemical composition and crystallinity of the layer formed. Defects in the lattice, impurities, and crystal grain boundaries generally introduce trap states and surface energy pinning, limiting the ultimate performance of the perovskite; hence, an in-depth understanding of the crystallization process is indispensable. Here, a kinetic and thermodynamic study of 2D perovskite layer crystallization on transparent conductive substrates are provided—fluorine-doped tin oxide and graphene. Due to markedly different surface structure and chemistry, the two substrates interact differently with the perovskite layer. A time-resolved grazing-incidence wide-angle X-ray scattering (GIWAXS) is used to monitor the crystallization on the two substrates. Molecular dynamics simulations are employed to explain the experimental data and to rationalize the perovskite layer formation. The findings assist substrate selection based on the required film morphology, revealing the structural dynamics during the crystallization process, thus helping to tackle the technological challenges of structure formation of 2D perovskites for optoelectronic devices. 相似文献
5.
Valerio Apicella Teslim Ayinde Fasasi Shu Wang Sipeng Lei Antonio Ruotolo 《Advanced Electronic Materials》2019,5(12)
Lateral effect, Schottky photo‐diodes are commonly used as magnetic‐ and position sensing‐ detectors. Yet, they can only respond to ultraviolet‐ and visible‐light because of the low optical transmittance in metals at long wavelengths, such as infrared light. Furthermore, Schottky contacts to narrow‐band gap semiconductors are challenging to fabricate. Here, it is shown that an extended multilayer‐graphene/silicon junction can be used as a lateral photo‐diode in the infrared range. A multilayer graphene film was grown on an intrinsic‐silicon substrate. The film shows graphene order near the interface to become amorphous carbon as the film grows in thickness. Since amorphous carbon behaves as a metal, this results in an effective metallic/2D/Si heterostructure, showing a rectifying behavior in the measured current–voltage characteristics. Moreover, photo‐induced Hall effect measurements show that the proximity to graphene increases the spectrum of absorbance of silicon. This work shows that 2D materials can be used to extend the range of application of silicon to the infrared wavelengths. 相似文献
6.
Lei Yin Feng Wang Ruiqing Cheng Zhenxing Wang Junwei Chu Yao Wen Jun He 《Advanced functional materials》2019,29(1)
Controlling the conduction behavior of 2D materials is an important prerequisite to achieve their electronic and optoelectronic applications. However, most of the reported approaches are aware of the shortcomings of inflexibility and complexity, which limits the possibility of multifunctional integration. Here, taking advantage of van der Waals heterostructure engineering, a simple method to achieve a dynamically controlled binary channel in a semivertical MoTe2/MoS2 field effect transistor is proposed. It is enabled by the high switchability between tunneling and thermal transports through simply changing the sign of voltage bias. In addition, the proposed system allows for multifunctional integration of transistor with on/off ratio >107 and diode with rectification ratio >106. Moreover, the devices show screen capability to negative photoresponse effect that is widely observed in ambipolar materials, hence improving the photodetection reliability and sensitivity. This study broadens the functionalities of van der Waals heterostructures and opens up more possibilities to realize multifunctional devices. 相似文献
7.
Huimin Yu Deyu Wang Huanyu Jin Pan Wu Xuan Wu Dewei Chu Yi Lu Xiaofei Yang Haolan Xu 《Advanced functional materials》2023,33(24):2214828
Improving interfacial solar evaporation performance is crucial for the practical application of this technology in solar-driven seawater desalination. Lowering evaporation enthalpy is one of the most promising and effective strategies to significantly improve solar evaporation rate. In this study, a new pathway to lower vaporization enthalpy by introducing heterogeneous interactions between hydrophilic hybrid materials and water molecules is developed. 2D MoN1.2 nanosheets are synthesized and integrated with rGO nanosheets to form stacked MoN1.2-rGO heterostructures with massive junction interfaces for interfacial solar evaporation. Molecular dynamics simulation confirms that atomic thick 2D MoN1.2 and rGO in the MoN1.2-rGO heterostructures simultaneously interact with water molecules, while the interactions are remarkably different. These heterogeneous interactions cause an imbalanced water state, which easily breaks the hydrogen bonds between water molecules, leading to dramatically lowered vaporization enthalpy and improved solar evaporation rate (2.6 kg m−2 h−1). This study provides a promising strategy for designing 2D-2D heterostructures to regulate evaporation enthalpy to improve solar evaporate rate for clean water production. 相似文献
8.
Xin Wang Han Li Hui Li Shuai Lin Wei Ding Xiaoguang Zhu Zhigao Sheng Hai Wang Xuebin Zhu Yuping Sun 《Advanced functional materials》2020,30(15)
2D/2D heterostructures can combine the collective advantages of each 2D material and even show improved properties from synergistic effects. 2D Transition metal carbide Ti3C2 MXene and 2D 1T‐MoS2 have emerged as attractive prototypes in electrochemistry due to their rich properties. Construction of these two 2D materials, as well as investigation about synergistic effects, is absent due to the instability of 1T‐MoS2. Here, 3D interconnected networks of 1T‐MoS2/Ti3C2 MXene heterostructure are constructed by magneto‐hydrothermal synthesis, and the electrochemical storage mechanisms are investigated. Improved extra capacitance is observed due to enlarged ion storage space from a synergistically interplayed effect in 3D interconnected networks. Outstanding rate performance is realized because of ultrafast electron transport originating from Ti3C2 MXene. This work provides an archetype to realize excellent electrochemical properties in 2D/2D heterostructures. 相似文献
9.
Kenan Elibol Clemens Mangler Tushar Gupta Georg Zagler Dominik Eder Jannik C. Meyer Jani Kotakoski Bernhard C. Bayer 《Advanced functional materials》2020,30(34)
Many applications of 2D materials require deposition of non‐2D metals and metal‐oxides onto the 2D materials. Little is however known about the mechanisms of such non‐2D/2D interfacing, particularly at the atomic scale. Here, atomically resolved scanning transmission electron microscopy (STEM) is used to follow the entire physical vapor deposition (PVD) cycle of application‐relevant non‐2D In/In2O3 nanostructures on graphene. First, a “quasi‐in‐situ” approach with indium being in situ evaporated onto graphene in oxygen‐/water‐free ultra‐high‐vacuum (UHV) is employed, followed by STEM imaging without vacuum break and then repeated controlled ambient air exposures and reloading into STEM. This allows stepwise monitoring of the oxidation of specific In particles toward In2O3 on graphene. This is then compared with conventional, scalable ex situ In PVD onto graphene in high vacuum (HV) with significant residual oxygen/water traces. The data shows that the process pathway difference of oxygen/water feeding between UHV/ambient and HV fabrication drastically impacts not only non‐2D In/In2O3 phase evolution but also In2O3/graphene out‐of‐plane texture and in‐plane rotational van‐der‐Waals epitaxy. Since non‐2D/2D heterostructures' properties are intimately linked to their structure and since influences like oxygen/water traces are often hard to control in scalable fabrication, this is a key finding for non‐2D/2D integration process design. 相似文献
10.
Bannur Nanjunda Shivananju Xiaozhi Bao Wenzhi Yu Jian Yuan Haoran Mu Tian Sun Tianyu Xue Yupeng Zhang Zhongzhu Liang Ruifeng Kan Han Zhang Bo Lin Shaojuan Li Qiaoliang Bao 《Advanced functional materials》2019,29(19)
Integrated photonics and optoelectronics devices based on graphene and related 2D materials are at the core of the future industrial revolution, facilitating compact and flexible nanophotonic devices. Tracking and detecting the motion of broadband light in millimeter to nanometer scale is an unfold science which has not been fully explored. In this work, tracking and detecting the motion of light (millimeter precision) is first demonstrated by integrating graphene with an optical fiber Bragg grating device (graphene‐FBG). When the incident light moves toward and away from the graphene‐FBG device, the Bragg wavelength red‐shifts and blue‐shifts, indicating its light motion tracking ability. Such light tracking capability can be further extended to an ultrabroad wavelength range as all‐optical photodetectors show the robust response from 400 nm to 10.768 µm with a linear optical response. Interestingly, it is found that graphene‐Bi2Te3 heterostructure on FBG shows 87% higher photoresponse than graphene‐FBG at both visible and telecom wavelengths, due to stronger phonon‐electron coupling and photo‐thermal conversion in the heterostructure. The device also shows superior stability even after 100 d. This work may open up amazing integrated nanophotonics applications such as astrophysics, optical communication, optical computing, optical logic gating, spectroscopy, and laser biology. 相似文献
11.
Graphene has been shown to be a prospective platform for active photonic devices with exotic optical properties. Employed in these devices, the graphene photodoping mechanism would allow for the remote spatiotemporal doping control by means of illumination, not restricted by the physical gate electrodes. This paper reports on the efficient graphene photodoping in graphene‐CH3NH3PbI3 perovskite heterostructure recently spotlighted for photodetector applications. To maximize the photoresponse, the heterostructure is optimized by systematically introducing additional layers of the self‐assembled monolayer of octadecyltrichlorosilane molecules, MoO3, and poly(3,4‐ethylenedioxythiophene) polystyrene sulfonate for improving interfacial charge transfer properties. The photodoping amount estimated from the photocurrent measurements is 2.7 × 1012 cm−2 at zero gate bias—more than twice higher than previously observed in graphene‐perovskite heterostructures. Without external gate bias, the estimated graphene Fermi energy varies from 0.37 to 0.43 eV due to photodoping, which is sufficient to operate graphene‐based active photonic devices at mid‐infrared frequencies, and similar to that typically achievable with the conventional electrostatic gating. Furthermore, this work highlights the missing yet important aspect of the characterization method for the phototransistors with a 2D channel, resulting from the mismatch between the units of the current and power densities. 相似文献
12.
Integrating 2D crystals into optical fibers can grant them optoelectronic properties and extend their range of applications. However, the ability to produce complicated structures is limited by the challenges of chemical vapor deposition manufacturing. Here, a 2D‐material heterostructure created on a fiber end‐face is successfully demonstrated by integrating a microscale multilayer graphene‐MoS2‐WS2 heterostructure film on it, using a simple layer‐by‐layer transferring method. The all‐in‐fiber photodetector (FPD) exhibits an ultrahigh photoresponsivity of ≈6.6 × 107 A·W−1 and a relatively fast time response of ≈7 ms at 400 nm light wavelength, due to the strong light absorption and the built‐in electric field of the heterostructure. Moreover, owing to the type‐II staggered band alignments in the MoS2‐WS2 heterostructure, the interlayer optical transition between the MoS2 and WS2 layers enables the FPD to sense the infrared light, displaying a photoresponsivity of ≈17.1 A·W−1 at 1550 nm. In addition, an inverse photoresponse is observed under high illuminating powers, indicating a competing photocurrent generation mechanism, comprising the photoconductive and photobolometric effects. It is believed that the findings will offer a new strategy for the development of novel all‐fiber optoelectronic devices based on 2D crystals. 相似文献
13.
Jian Jiang Yao Wen Hao Wang Lei Yin Ruiqing Cheng Chuansheng Liu Liping Feng Jun He 《Advanced Electronic Materials》2021,7(7):2001125
Photodetection technology has been systematically studied due to wide practical applications in temperature monitoring, thermal image technology, and light communication systems. To date, photodetectors based on multitudes of 2D materials have been reported because of their excellent performance. On account of their novel physical properties with ultrathin thickness, cost-effective preparation with mechanical transfer process, natural passivated surface without dangling bonds, various bandgaps corresponding with a wide photoresponse, and so on, new 2D materials emerge to play significant roles in the field of photodetection. In this regard, a great advance has been achieved in terms of preparation and device application, especially in the last decade. However, there are still some challenges to obtain high-performance photodetectors, such as growing high-quality 2D materials, achieving higher quantum efficiency, effectively separating the photogenerated electron–hole pairs, and so on. In this review, the recent development of the state-of-the-art photodetection composed of 2D materials is summarized. Moreover, the key parameters and mechanisms in photodetectors are highlighted, and an overview on 2D materials and their heterostructures is provided. Finally, the strategies for improving the performance of photodetectors are also highlighted. The review will provide a guide to further practical applications in photodetection devices. 相似文献
14.
2D materials including graphene and TMDs have proven interesting physical properties and promising optoelectronic applications. We reviewed the growth, characterization and optoelectronics based on 2D TMDs and their heterostructures, and demonstrated their unique and high quality of performances. For example, we observed the large mobility, fast response and high photo-responsivity in MoS2, WS2 and WSe2 phototransistors, as well as the novel performances in vdW heterostructures such as the strong interlayer coupling, am-bipolar and rectifying behaviour, and the obvious photovoltaic effect. It is being possible that 2D family materials could play an increasingly important role in the future nano- and opto-electronics, more even than traditional semiconductors such as silicon. 相似文献
15.
《Advanced Electronic Materials》2018,4(2)
Over the past decade, graphene and other 2D materials have attracted much attention in both fundamental studies and potential applications due to their extraordinary properties. In particular, heterostructures based on these van der Waals (vdW) materials have become one of the leading hot topics in the electronic and optoelectronic field. As representative photoactive 2D materials, transition metal dichalcogenides (TMDs) play a critical role in the creation of 2D optoelectronic heterojunctions themselves or in combination with other 2D materials. Here, the optoelectronics of three types of TMD‐based 2D heterostructures are reviewed: (1) heterostructures between different TMDs, including vertical vdW heterojunctions fabricated by mechanical transfer and direct synthesis, and lateral in‐plane heterostructures formed via epitaxial growth; (2) heterostructures between TMDs and graphene built by stacking, vdW epitaxy, and lateral assembly; (3) heterostructures between TMDs and other novel 2D materials, such as black phosphorus and GaTe. The operation mechanism of all these optoelectronic devices is discussed. 相似文献
17.
《Advanced Electronic Materials》2018,4(9)
2D material–based photodetectors have demonstrated the great potential in future optoelectric applications and the compatibility with the traditional semiconductor technology. However, low detectivity and difficulty of large‐scale fabrication still limit their application. Here, an ultrasensitive in‐plane lateral graphene–MoS2 heterostructure is successfully constructed using one‐step growth by chemical vapor deposition, which is suitable for large‐scale fabrication. The Schottky junction is formed in the channel with the edge contact of graphene and MoS2. It displays good rectification characteristics with an on/off ratio up to 106. As a photodetector, it exhibits excellent detectivity with the specific detectivity D* up to 1.4 × 1014 Jones and the responsivity of 1.1 × 105 A W−1, which benefit from strong absorption, the efficient separation of the photoexcited carriers, and quick charge transport in the Schottky junction device. Moreover, heterostructure photodetector array is demonstrated here which shows the large‐scale fabrication capacity. All of these results prove the potential of 2D material–based junction devices for optoelectronic devices. 相似文献
18.
19.
Two-dimensional(2 D) hybrid organic-inorganic perovskites have recently attracted attention due to their layered nature, naturally formed quantum well structure, large exciton binding energy and especially better long-term environmental stability compared with their three-dimensional(3 D) counterparts. In this report, we present a brief overview of the recent progress of the optoelectronic applications in 2 D perovskites. The layer number dependent physical properties of 2 D perovskites will first be introduced and then the different synthetic approaches to achieve 2 D perovskites with different morphologies will be discussed. The optical, optoelectronic properties and self-trapped states in 2 D perovskites will be described, which are indispensable for designing the new device structures with novel functionalities and improving the device performance. Subsequently, a brief summary of the advantages and the current research status of the 2 D perovskite-based heterostructures will be illustrated.Finally, a perspective of 2 D perovskite materials is given toward their material synthesis and novel device applications. 相似文献
20.
Chih-Hsiang Lin P. C. Chang S. J. Murry D. Zhang Rui Q. Yang S. S. Pei J. I. Malin J. R. Meyer C. L. Felix J. R. Lindle L. Goldberg C. A. Hoffman E. J. Bartoli 《Journal of Electronic Materials》1997,26(5):440-443
We report optically pumped four-constituent InAs/InGaSb/InAs/AlSb type-II quantum-well lasers emitting at 3.2–4.1 μm. Lasing
was observed up to 350K under pulsed operation, with a characteristic temperature T0 up to 68K at temperatures above ambient. 相似文献