射频ICP离子源设计研究

本文介绍了射频 (RF)感应耦合等离子体 (ICP)离子源的设计研究。对RFICP的结构、离子流的引出以及离子流的均匀性、中性化和射频匹配网络进行了研究。     

电感耦合等离子体质谱在长寿命放射性核素分析中的应用

电感耦合等离子体质谱(Inductively Coupled Plasma Mass Spectrometer,ICP-MS)具有灵敏度高、检出限低、线性动态范围宽和可以进行多元素同时测定及同位素比测量等优点,是一种具有广阔前景的痕量(超痕量)无机多元素分析技术.ICP-MS检测半衰期大于几百年的放射性核素优于放射计数...     

Synthesis and Characterization of High-Entropy CrMoNbTaVW Thin Films Using High-Throughput Methods

High-entropy alloys (HEAs) or complex concentrated alloys (CCAs) offer a huge research area for new material compositions and potential applications. Since the combination of several elements sometimes leads to unexpected and unpredictable material properties. In addition to the element combinations, the optimization of the element proportions in CCAs and HEAs is also a decisive factor in tailoring desired material properties. However, it is almost impossible to achieve the composition and characterization of CCAs and HEAs with a sufficient number of compositions by conventional experiments. Therefore, an optimized high-throughput magnetron sputtering synthesis to fabricate a new HEA gradient layer of six elements is presented. With this approach, the compositional space of the HEA system CrMoNbTaVW can be studied in different subsections to determine the influence of the individual elements and their combinations on the structure, morphology, and physical properties (hardness and resistivity). It is found that the Cr-, Ta-, and W-rich phases, which have a grain size of 10–11 nm, exhibit the hardest mechanical properties, whereas V-, Ta-, and Cr-rich compounds exhibit the highest electrical resistivity. The combination of high-throughput synthesis, automated analysis tools, and automated data interpretation enables rapid and time-efficient characterization of the novel CrMoNbTaVW gradient film.     

An Inductively Coupled Plasma Source for the Gaseous Electronics Conference RF Reference Cell

In order to extend the operating range of the GEC RF Reference Cell, we developed an inductively coupled plasma source that replaced the standard parallel-plate upper-electrode assembly. Voltage and current probes, Langmuir probes, and an 80 GHz interferometer provided information on plasmas formed in argon, chlorine, and nitrogen at pressures from 0.1 Pa to 3 Pa. For powers deposited in the plasma from 20 W to 300 W, the source produced peak electron densities between 10¹⁰/cm³ and 10¹²/cm³ and electron temperatures near 4 eV. The electron density peaked on axis with typical full-width at half maximum of 7 cm to 9 cm. Discharges in chlorine and nitrogen had bimodal operation that was clearly evident from optical emission intensity. A dim mode occurred at low power and a bright mode at high power. The transition between modes had hysteresis. After many hours of high-power operation, films formed on electrodes and walls of one Cell. These deposits affected the dim-to-bright mode transition, and also apparently caused generation of hot electrons and increased the plasma potential.     

ICP－OES法测定镀铬液中多种金属杂质元素

为简便而准确测定镀铬液中金属杂质元素的含量,采用电感耦合等离子体发射光谱法（ICP-OES）对镀铬液中A1,Mn,Fe,Co,Ni,Cu,Zn,Cd,Sb,Pb等杂质元素进行了测定,确定了仪器的最佳工作参数,选择了合适的分析谱线,研究了主量元素cr和共存元素对光谱的干扰情况。结果表明：10种金属元素的检出限为0．15～...     

电感耦合放电对双频容性耦合Ar-N_2等离子体物理特性的影响

电感耦合等离子体增强的容性耦合等离子体是一种新的等离子体源,采用这种放电方式可以获得高密度均匀的等离子体。本文主要利用朗缪尔单探针对以下几种放电方式的等离子体性质进行诊断:1双频(60,13.56 MHz)容性耦合等离子体;2电感(13.56 MHz)耦合等离子体;3电感(13.56 MHz)耦合增强的双频(60,13.56 MHz)容性耦合等离子体。通过研究电感耦合放电对容性耦合放电的影响,以及电感耦合功率、混合气体比例等宏观参量对等离子体特性的影响,获得材料处理的最佳条件。实验发现当气压是5Pa时:1双频容性耦合等离子体密度是1010 cm-3左右,极板边缘处等离子体密度较低,中心处较高。随着氩气比例增加,等离子体密度提高,电子温度降低。2电感耦合等离子体放电,随着氩气比例增加,等离子体密度增大。当氩气比例增加到70%,等离子体密度发生数量级改变,高于双频容性耦合等离子体。3电感耦合增强的双频容性耦合等离子体密度较高,当氩气比例是80%,容性电感耦合功率200 W时,组合放电等离子体密度最高,均匀性较好,电子温度升高,径向差别不大。通过实验得出,当氩气比例为80%,容性高低频功率分别为150和50 W,电感耦合功率是200 W时,双频(60,13.56 MHz)与电感(13.56 MHz)组合放电可以获得高密度均匀的等离子体。     

电感耦合等离子体原子发射光谱法测定铬铁中的铬磷硅

用电感耦合等离子体原子发射光谱法(ICP-AES)测定铬铁中铬磷硅存在的问题是一些高碳铬铁、氮化铬铁等试样难以用酸溶解,在碱熔基体中,大量的易电离元素钠的存在使得测定困难,铬铁中高含量铬和微量的磷、硅等同时测定尤为困难。ICP-AES法同时测定铬铁中铬磷硅是一种新颖的方法。通过试验研究,确定了利用氢氧化钠-过氧化钠混合熔剂熔样的样品处理方法。在用ICP进行测试时,不同谱线所受到的干扰不同。推荐选择Cr 267.716 nm、Cr 206.158 nm、P 213.617 nm、Si 251.611 nm、Si 288.158 nm为分析线;对于干扰,采用基体匹配和两点校正法消除,方法的线性相关系数在0.995以上,磷的测试精密度在5.0%,铬、硅在1.0%以下;铬、硅检出限在0.006%以下,磷为0.002%。准确度试验表明,分析结果与推荐值和手工分析结果间的分析误差在试验允许的误差范围内。     

氨气配位-电感耦合等离子体串联质谱法在镍基高温合金痕量元素检测中的应用

基于NH₃配位的价键理论,建立电感耦合等离子体串联质谱法应用于镍基高温合金多种痕量元素的检测。以Zn元素为例,选择NH₃作为反应气,Zn与NH₃发生配位反应,仅产物离子Zn(NH₃)_x被检测,进而达到消除多原子离子干扰的目的。经确定离子产物、优化气流速和抑制参数,痕量Zn的检出限低至0.13 μg/g,相对标准偏差为4.2%～5.1%,加标回收率为93.0%～103%。该方法具有检出限低、灵敏度高、准确度高的优点,有望扩展应用于镍基高温合金中Ag、Cu、V、Fe等多种痕量元素的测定。     

电感耦合等离子体对HDPE粉体的表面处理

用搅拌式电感耦合等离子体反应器对高密度聚乙烯（HDPE）粉体进行表面处理,采用水接触角、红外光谱（FT-IR）和X射线光电子能谱（XPS）对等离子体处理前后HDPE粉体的水接触角、表面成分的变化进行分析。实验结果表明,随着等离子体处理时间延长和放电功率增加,水接触角减小。在功率100W处理30min后,水接触角从处理前...     

ICP刻蚀4H-SiC栅槽工艺研究

为避免金属掩膜易引起的微掩膜,本文采用SiO2介质作为掩膜,SF6/O2/Ar作为刻蚀气体,利用感应耦合等离子体刻蚀(ICP)技术对4H-SiC trench MOSFET栅槽刻蚀工艺进行了研究。本文详细研究了ICP刻蚀的不同工艺参数对刻蚀速率、刻蚀选择比以及刻蚀形貌的影响。实验结果表明:SiC刻蚀速率随着ICP功率和RF偏压功率的增大而增加;随着气体压强的增大刻蚀选择比降低;而随着氧气含量的提高,不仅刻蚀选择比增大,而且能够有效地消除微沟槽效应。刻蚀栅槽形貌和表面粗糙度分别通过扫描电子显微镜和原子力显微镜进行表征,获得了优化的栅槽结构,RMS表面粗糙度0.4nm。     

Effects of Fe/Ni Ratio on Microstructure and Properties of FeNiCrAlNb High-Entropy Alloys

Herein, the effects of Fe/Ni ratio on the microstructure, mechanical properties, and corrosion resistance in a 3.5 wt% NaCl solution of Fe_xNi_65−xCr₂₀Al₁₀Nb₅ are investigated systematically. It is found that the phases shifted from the FCC-dominated to the BCC-dominated with the molar ratio of the Fe/Ni increased. The strength of Fe_xNi_65−xCr₂₀Al₁₀Nb₅ increases with the molar ratio of Fe/Ni further increased, while the plasticity decreases. The yield strength reaches 1,653 MPa at x = 45. The alloy exhibits the best corrosion resistance when x = 35 which is attributed to the dominant FCC phases in the dendritic region.     

Continuous Synthesis of Hollow High-Entropy Nanoparticles for Energy and Catalysis Applications

Mixing multimetallic elements in hollow-structured nanoparticles is a promising strategy for the synthesis of highly efficient and cost-effective catalysts. However, the synthesis of multimetallic hollow nanoparticles is limited to two or three elements due to the difficulties in morphology control under the harsh alloying conditions. Herein, the rapid and continuous synthesis of hollow high-entropy-alloy (HEA) nanoparticles using a continuous “droplet-to-particle” method is reported. The formation of these hollow HEA nanoparticles is enabled through the decomposition of a gas-blowing agent in which a large amount of gas is produced in situ to “puff” the droplet during heating, followed by decomposition of the metal salt precursors and nucleation/growth of multimetallic particles. The high active sites per mass ratio of such hollow HEA nanoparticles makes them promising candidates for energy and electrocatalysis applications. As a proof-of-concept, it is demonstrated that these materials can be applied as the cathode catalyst for Li–O₂ battery operations with a record-high current density per catalyst mass loading of 2000 mA g_cat.⁻¹, as well as good stability and durable catalytic activity. This work offers a viable strategy for the continuous manufacturing of hollow HEA nanomaterials that can find broad applications in energy and catalysis.     

ICP刻蚀技术在808nm激光器中的应用

主要分析了不同工艺参数对于刻蚀图形的影响，包括刻蚀侧壁角度，刻蚀表面平整度，选择比，侧向钻蚀等几个方面，及ICP刻蚀对激光器性能的影响，通过对翔蚀图形的控制，使2寸片内均匀性〈±5％，侧壁角达到79°～81°。     

电感耦合等离子体原子发射光谱内标法测定铝钼锆合金中钼锆

建立了以盐酸、硝酸和氢氟酸溶解Al-60Mo-20Zr合金样品、电感耦合等离子体发射光谱(ICP-AES)内标法测定合金中主量元素Mo、Zr的分析方法。通过优化仪器工作条件,选择Mo 202.030 nm、Zr 396.621 nm谱线作为分析线,Co 231.160 nm作为内标分析线,采用基体匹配结合内标法,消除了基体干扰效应和仪器信号漂移的影响,提高了测定主量元素Mo、Zr的稳定性。结果表明,加标回收率在98.3%—104.0%之间,精密度均小于0.78%,线性相关系数r大于0.999 8。用于样品分析的Mo、Zr测定结果与X荧光光谱法吻合,在相同的仪器条件下,本方法的精密度和准确度明显优于ICP-AES外标法。     

4H-SiC在Cl2+Ar混合气体中的ICP刻蚀工艺研究

采用C12＋Ar作为刻蚀气体进行了单晶4H-SiC材料的感应耦合等离子体（ICP）刻蚀工艺研究，分析了气体流量、气体混合比、反应室压力、1CP功率等工艺参数对刻蚀速率和刻蚀质量的影响．得到的最大蚀速率为194nm/min，表面均方根粗糙度为1．237nm，Cl／Si原子浓度比约为0．97％：99．3％。     

电感耦合等离子体原子发射光谱法测定氟钽酸钾中钙镁铁硅

采用智能样品消解仪并以硝酸、氢氟酸溶解样品,建立了电感耦合等离子体原子发射光谱仪(ICPOES)测定氟钽酸钾中钙、镁、铁、硅的分析方法。实验优化了仪器工作条件,选择Ca 396.847 nm、Mg 279.553nm、Fe 239.562 nm和Si 251.612 nm谱线作为分析线,采用基体匹配、扣除背景和标准加入法克服了基体效应和光谱干扰。结果表明,各元素的检出限为0.001 3—0.005 9μg/m L,加标回收率在94.4%—106.0%,相对标准偏差RSD≤4.19%,钙、镁、铁测定结果与直流电弧原子发射光谱法测定结果吻合,硅测定结果与甲基绿-硅钼杂多酸分光光度法的一致,具有较好准确度和精密度。