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1.
Lukas Völkel Dennis Braun Melkamu Belete Satender Kataria Thorsten Wahlbrink Ke Ran Kevin Kistermann Joachim Mayer Stephan Menzel Alwin Daus Max C. Lemme 《Advanced functional materials》2024,34(15):2300428
The 2D insulating material hexagonal boron nitride (h-BN) has attracted much attention as the active medium in memristive devices due to its favorable physical properties, among others, a wide bandgap that enables a large switching window. Metal filament formation is frequently suggested for h-BN devices as the resistive switching (RS) mechanism, usually supported by highly specialized methods like conductive atomic force microscopy (C-AFM) or transmission electron microscopy (TEM). Here, the switching of multilayer hexagonal boron nitride (h-BN) threshold memristors with two nickel (Ni) electrodes is investigated through their current conduction mechanisms. Both the high and the low resistance states are analyzed through temperature-dependent current–voltage measurements. The formation and retraction of nickel filaments along boron defects in the h-BN film as the resistive switching mechanism is proposed. The electrical data are corroborated with TEM analyses to establish temperature-dependent current–voltage measurements as a valuable tool for the analysis of resistive switching phenomena in memristors made of 2D materials. The memristors exhibit a wide and tunable current operation range and low stand-by currents, in line with the state of the art in h-BN-based threshold switches, a low cycle-to-cycle variability of 5%, and a large On/Off ratio of 107. 相似文献
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Kookjin Lee Junhee Choi Ben Kaczer Alexander Grill Jae Woo Lee Simon Van Beek Erik Bury Javier Diaz-Fortuny Adrian Chasin Jaewoo Lee Jungu Chun Dong Hoon Shin Junhong Na Hyeran Cho Sang Wook Lee Gyu-Tae Kim 《Advanced functional materials》2021,31(23):2100625
In this study, high-performance few-layered ReS2 field-effect transistors (FETs), fabricated with hexagonal boron nitride (h-BN) as top/bottom dual gate dielectrics, are presented. The performance of h-BN dual gated ReS2 FET having a trade-off of performance parameters is optimized using a compact model from analytical choice maps, which consists of three regions with different electrical characteristics. The bottom h-BN dielectric has almost no defects and provides a physical distance between the traps in the SiO2 and the carriers in the ReS2 channel. Using a compact analyzing model and structural advantages, an excellent and optimized performance is introduced consisting of h-BN dual-gated ReS2 with a high mobility of 46.1 cm2 V−1 s−1, a high current on/off ratio of ≈106, a subthreshold swing of 2.7 V dec−1, and a low effective interface trap density (Nt,eff) of 7.85 × 1010 cm−2 eV−1 at a small operating voltage (<3 V). These phenomena are demonstrated through not only a fundamental current–voltage analysis, but also technology computer aided design simulations, time-dependent current, and low-frequency noise analysis. In addition, a simple method is introduced to extract the interlayer resistance of ReS2 channel through Y-function method as a function of constant top gate bias. 相似文献
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Martin Esmann Stephen C. Wein Carlos Antón-Solanas 《Advanced functional materials》2024,34(30):2315936
In this review, the current landscape of emergent quantum materials for quantum photonic applications is described. The review focuses on three specific solid-state platforms: single emitters in monolayers of transition metal dichalcogenides (TMDs), defects in hexagonal boron nitride (hBN), and colloidal quantum dots in perovskites (PQDs). These platforms share a unique technological accessibility, enabling the rapid implementation of testbed quantum applications, all while being on the verge of becoming technologically mature enough for a first generation of real-world quantum applications. The review begins with a comprehensive overview of the current state-of-the-art for relevant single-photon sources in the solid-state, introducing the most important performance criteria and experimental characterization techniques along the way. Progress for each of the three novel materials is then benchmarked against more established (yet complex) platforms, highlighting performance, material-specific advantages, and giving an outlook on quantum applications. This review will thus provide the reader with a snapshot on latest developments in the fast-paced field of emergent single-photon sources in the solid-state, including all the required concepts and experiments relevant to this technology. 相似文献
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Tingting Han Fernando Aguirre Kaichen Zhu Bin Yuan Sebastian Pazos Nan Zhang Sui-Dong Wang Shaojuan Li Mario Lanza 《Advanced functional materials》2024,34(41):2403029
Data encryption is an essential building block in modern electronic systems to prevent spying and hacking. Every day more and more objects produce electronic data, and this needs to be encrypted before being transmitted. Hence, designing devices, circuits, and systems for data encryption that can be integrated in all kinds of objects and that consume low amounts of energy is highly necessary. Here, this work reports the fabrication of flexible and transparent electronic circuits consisting of devices that exhibit threshold-type resistive switching with a high degree of stochasticity. The cycle-to-cycle variability of switching voltages and state currents is significant but confined within a well-defined range, which is consistent across multiple devices. This allows to design an efficient protocol for true random number generation. The circuits are fabricated with only synthetic 2D materials, can be fabricated in a scalable manner, and can be integrated in any object. 相似文献
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Wei Wang Lijun Zhou Sheng Hu Konstantin S. Novoselov Yang Cao 《Advanced functional materials》2021,31(6):2005053
2D crystals with noncentrosymmetric structures exhibit piezoelectric properties that show great potential for applications in energy conversion and electromechanical devices. Quantitative visualization of piezoelectric field spatial distribution is expected to offer a better understanding of macroscopic piezoelectricity, yet remains to be realized. Here, a technique of mapping piezoelectric potential on 2D materials bubbles based on the measurements of surface potential using kelvin probe force microscope is reported. By using odd number of layers hexagonal boron nitride and MoS2 nanobubbles, strain-induced piezoelectric potential profiles are quantitatively visualized on the bubbles. The obtained piezoelectric coefficient is 3.4 ± 1.2 × 10−10 C m−1 and 3.3 ± 0.2 × 10−10 C m−1 for hBN and MoS2, in agreement with the values reported. On the contrary, homogeneous distribution of surface potential is measured on even number of layers crystals bubbles where the crystal's inversion symmetry is restored. Using such technique, in situ visualization of photogenerated charge carrier separation under piezoelectric potential is also achieved, which offers a platform of investigating the coupling between piezoelectricity and photoelectric effect, and an approach of tuning piezoelectric field. The present work should aid the understanding of local piezoelectric potential and its various affecting factors including substrate doping and external stimuli, and give insights for designing piezoelectric nanodevices based on 2D nanobubbles. 相似文献
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Pingping Zhuang Weiyi Lin Jaehyun Ahn Massimo Catalano Harry Chou Anupam Roy Manuel Quevedo‐Lopez Luigi Colombo Weiwei Cai Sanjay K. Banerjee 《Advanced Electronic Materials》2020,6(1)
Resistive switching (RS) induced by electrical bias is observed in numerous materials, including 2D hexagonal boron nitride (hBN), which has been used in resistive random access memories (RRAMs) in recent years. For practical high‐density, cross‐point memory arrays, compared with bipolar memories, nonpolar (or unipolar) devices are preferable in terms of peripheral circuit design and storage density. The non‐volatile nonpolar RS phenomenon of hBN‐based RRAMs with Ti/hBN/Au structure as a prototype is reported. Stable manual DC switching for ≈103 cycles with an average window over five orders of magnitude is demonstrated. After identifying a possible mechanism related to the Joule heat that contributes to the rupture of conductive filaments in nonpolar RS operations, this mechanism is validated by analyzing the occurrence of the “Re‐set” process. Though the intriguing physical origin still requires more comprehensive studies, the achievement of nonpolar RS should make it more feasible to use hBN in practical RRAM technology. 相似文献
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Kai Qian Roland Yingjie Tay Viet Cuong Nguyen Jiangxin Wang Guofa Cai Tupei Chen Edwin Hang Tong Teo Pooi See Lee 《Advanced functional materials》2016,26(13):2176-2184
Hexagonal boron nitride (hBN), which is a 2D layered dielectric material, sometimes referred as “white graphene” due to its structural similarity with graphene, has attracted much attention due to its fascinating physical properties. Here, for the first time the use of chemical vapor deposition ‐grown hBN films to fabricate ultrathin (≈3 nm) flexible hBN‐based resistive switching memory device is reported, and the switching mechanism through conductive atomic force microscopy and ex situ transmission electron microscopy is studied. The hBN‐based resistive memory exhibits reproducible switching endurance, long retention time, and the capability to operate under extreme bending conditions. Contrary to the conventional electrochemical metallization theory, the conductive filament is found to commence its growth from the anode to cathode. This work provides an important step for broadening and deepening the understanding on the switching mechanism in filament‐based resistive memories and propels the 2D material application in the resistive memory in future computing systems. 相似文献
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Two-dimensional (2D) materials have recently received a great deal of attention due to their unique structures and fascinating properties, as well as their potential applications. 2D hexagonal boron nitride (2D h-BN), an insulator with excellent thermal stability, chemical inertness, and unique electronic and optical properties, and a band gap of 5.97 eV, is considered to be an ideal candidate for integration with other 2D materials. Nevertheless, the controllable growth of high-quality 2D h-BN is still a great challenge. A comprehensive overview of the progress that has been made in the synthesis of 2D h-BN is presented, highlighting the advantages and disadvantages of various synthesis approaches. In addition, the electronic, optical, thermal, and mechanical properties, heterostructures, and related applications of 2D h-BN are discussed. 相似文献
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Xiaoxi Zhu Leonard W. T. Ng Guohua Hu Tien‐Chun Wu Doo‐Seung Um Nasiruddin Macadam Tawfique Hasan 《Advanced functional materials》2020,30(31)
Solution‐processable thin‐film dielectrics represent an important material family for large‐area, fully‐printed electronics. Yet, in recent years, it has seen only limited development, and has mostly remained confined to pure polymers. Although it is possible to achieve excellent printability, these polymers have low (≈2–5) dielectric constants (εr). There have been recent attempts to use solution‐processed 2D hexagonal boron nitride (h‐BN) as an alternative. However, the deposited h‐BN flakes create porous thin‐films, compromising their mechanical integrity, substrate adhesion, and susceptibility to moisture. These challenges are addressed by developing a “one‐pot” formulation of polyurethane (PU)‐based inks with h‐BN nano‐fillers. The approach enables coating of pinhole‐free, flexible PU+h‐BN dielectric thin‐films. The h‐BN dispersion concentration is optimized with respect to exfoliation yield, optical transparency, and thin‐film uniformity. A maximum εr ≈ 7.57 is achieved, a two‐fold increase over pure PU, with only 0.7 vol% h‐BN in the dielectric thin‐film. A high optical transparency of ≈78.0% (≈0.65% variation) is measured across a 25 cm2 area for a 10 μm thick dielectric. The dielectric property of the composite is also consistent, with a measured areal capacitance variation of <8% across 64 printed capacitors. The formulation represents an optically transparent, flexible thin‐film, with enhanced dielectric constant for printed electronics. 相似文献
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Yunjo Jeong Ossie Douglas Utkarsh Misra Md Rubayat-E Tanjil Kenji Watanabe Takashi Taniguchi Michael Cai Wang 《Advanced Electronic Materials》2021,7(6):2100002
Electromigration in metal interconnects remains a significant challenge in the continued scaling of integrated circuits towards ever-smaller single-nanometer nodes. Conventional damascene architectures of barrier/liner layers and conducting metal cause inevitable compromises between device performance and feature dimensions. In contrast to contemporary barrier/liner materials (e.g., Co, Ta, and Ru), an ultrathin passivation layer that can effectively mitigate electromigration is needed. At the ultimate atomically-thin limit, 2D materials are promising candidates given their exceptional mechanical properties and impermeability. Here, a facile and effective approach is presented to mitigating electromigration in copper (Cu) interconnects via passivation with insulating monolayer 2D hexagonal boron nitride (hBN). The hBN-passivated Cu interconnects, compared to otherwise identical but bare Cu interconnects, exhibit on average a >20% higher breakdown current density and a >2600% longer lifetime (at a high current density of 5.4 × 107 A cm−2). Post-mortem metrology elucidates uniform conformal contact between the hBN-passivated Cu interface and common failure features due to electromigration. 相似文献
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Ram Kumar K. Gopalakrishnan Irshad Ahmad C. N. R. Rao 《Advanced functional materials》2015,25(37):5910-5917
Composites of boron nitride (BN) and carboxylated graphene are prepared for the first time using covalent cross‐linking employing the carbodiimide reaction. The BN1–xGx (x ≈ 0.25, 0.5, and 0.75) obtained are characterized using a variety of spectroscopic techniques and thermogravimetric analysis. The composites show composition‐dependent electrical resistivity, the resistivity decreasing with increase in graphene content. The composites exhibit microporosity and the x ≈ 0.75 composite especially exhibits satisfactory performance with high stability as an electrode in supercapacitors. The x ≈ 0.75 composite is also found to be a good electrocatalyst for the oxygen reduction reaction in fuel cells. 相似文献
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Resistive Switching: Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride (Adv. Funct. Mater. 10/2017) 
下载免费PDF全文
下载免费PDF全文 Chengbin Pan Yanfeng Ji Na Xiao Fei Hui Kechao Tang Yuzheng Guo Xiaoming Xie Francesco M. Puglisi Luca Larcher Enrique Miranda Lanlan Jiang Yuanyuan Shi Ilia Valov Paul C. McIntyre Rainer Waser Mario Lanza 《Advanced functional materials》2017,27(10)
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Yafeng Deng Yixiang Li Pengfei Wang Shuang Wang Xuan Pan Dong Wang 《半导体学报》2022,43(5):052003-1-052003-5
With the atomically sharp interface and stable switching channel, van der Waals (vdW) heterostructure memristors have attracted extensive interests for the application of high-density memory and neuromorphic computing. Here, we demonstrate a new type of vdW heterostructure memristor device by sandwiching a single-crystalline h-BN layer between two thin graphites. In such a device, a stable bipolar resistive switching (RS) behavior has been observed for the first time. We also characterize their switching performance, and observe an on/off ratio of >103 and a minimum RESET voltage variation coefficient of 3.81%. Our work underscores the potential of 2D materials and vdW heterostructures for emerging memory and neuromorphic applications. 相似文献
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Chengbin Pan Yanfeng Ji Na Xiao Fei Hui Kechao Tang Yuzheng Guo Xiaoming Xie Francesco M. Puglisi Luca Larcher Enrique Miranda Lanlan Jiang Yuanyuan Shi Ilia Valov Paul C. McIntyre Rainer Waser Mario Lanza 《Advanced functional materials》2017,27(10)
The use of 2D materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while the research in 2D metallic and semiconducting materials is well established, detailed knowledge and applications of 2D insulators are still scarce. In this paper, the presence of resistive switching (RS) in multilayer hexagonal boron nitride (h‐BN) is studied using different electrode materials, and a family of h‐BN‐based resistive random access memories with tunable capabilities is engineered. The devices show the coexistence of forming free bipolar and threshold‐type RS with low operation voltages down to 0.4 V, high current on/off ratio up to 106, and long retention times above 10 h, as well as low variability. The RS is driven by the grain boundaries (GBs) in the polycrystalline h‐BN stack, which allow the penetration of metallic ions from adjacent electrodes. This reaction can be boosted by the generation of B vacancies, which are more abundant at the GBs. To the best of our knowledge, h‐BN is the first 2D material showing the coexistence of bipolar and threshold RS, which may open the door to additional functionalities and applications. 相似文献
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Bao Jin Pu Huang Qi Zhang Xing Zhou Xiuwen Zhang Liang Li Jianwei Su Huiqiao Li Tianyou Zhai 《Advanced functional materials》2018,28(20)
2D nonlayered materials that possess appealing properties are entering the researchers' vision. However, direct access to the 2D level of these materials is still a great challenge due to the instrinsic isotropic chemical bond. This work presents the initially self‐limited epitaxial growth of ultrathin nonlayered CdS flakes (as thin as 6 nm) on mica substrate with a large domain size (>40 µm) by employing In2S3 as the passivation agent. Besides, the thickness and sizes of the products could be tunable by the addition level of In2S3 amount. The growth mechanism is evidenced via experiments and theoretical calculations, which is attributed to the surface distortion effect of In–S motif and the preference of local environments for In on the CdS (0001) surface. The photodetector designed on CdS flake demonstrates a high photoswitching ratio (up to 103), a high detectivity (D* ≈ 2.71 × 109 Jones), and fast photoresponse speed (τR = 14 ms, τD = 8 ms). The as‐proposed self‐limited epitaxial growth method opens a new avenue to synthetize 2D nonlayered materials and will promote their further applications in novel optoelectronic devices. 相似文献
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Nicholas R. Glavin Christopher Muratore Michael L. Jespersen Jianjun Hu Phillip T. Hagerty Al M. Hilton Austin T. Blake Christopher A. Grabowski Michael F. Durstock Michael E. McConney Drew M. Hilgefort Timothy S. Fisher Andrey A. Voevodin 《Advanced functional materials》2016,26(16):2640-2647
Next‐generation nanoelectronics based on 2D materials ideally will require reliable, flexible, transparent, and versatile dielectrics for transistor gate barriers, environmental passivation layers, capacitor spacers, and other device elements. Ultrathin amorphous boron nitride of thicknesses from 2 to 17 nm, described in this work, may offer these attributes, as the material is demonstrated to be universal in structure and stoichiometric chemistry on numerous substrates including flexible polydimethylsiloxane, amorphous silicon dioxide, crystalline Al2O3, other 2D materials including graphene, 2D MoS2, and conducting metals and metal foils. The versatile, large area pulsed laser deposition growth technique is performed at temperatures less than 200 °C and without modifying processing conditions, allowing for seamless integration into 2D device architectures. A device‐scale dielectric constant of 5.9 ± 0.65 at 1 kHz, breakdown voltage of 9.8 ± 1.0 MV cm?1, and bandgap of 4.5 eV were measured for various thicknesses of the ultrathin a‐BN material, representing values higher than previously reported chemical vapor deposited h‐BN and nearing single crystal h‐BN. 相似文献
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Nanoelectronics: Amorphous Boron Nitride: A Universal,Ultrathin Dielectric For 2D Nanoelectronics (Adv. Funct. Mater. 16/2016) 下载免费PDF全文
下载免费PDF全文 Nicholas R. Glavin Christopher Muratore Michael L. Jespersen Jianjun Hu Phillip T. Hagerty Al M. Hilton Austin T. Blake Christopher A. Grabowski Michael F. Durstock Michael E. McConney Drew M. Hilgefort Timothy S. Fisher Andrey A. Voevodin 《Advanced functional materials》2016,26(16):2771-2771
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Xuanling Liu Ziyi Wu Han Zhong Xuanyu Wang Jianfei Yang Ziling Zhang Jianhua Han Dan Oron Hong Lin 《Advanced functional materials》2023,33(38):2304140
Nanomaterials such as quantum dots and 2D materials have been widely used to improve the performance of perovskite solar cells due to their favorable optical properties, conductivity, and stability. Nevertheless, the interfacial crystal structures between perovskites and nanomaterials have always been ignored while large mismatches can result in a significant number of defects within solar cells. In this work, cubic PbS nanosheets with (200) preferred crystal planes are synthesized through anisotropy growth. Based on the similar crystal structure between cubic PbS (200) and cubic-phase formamidinium lead triiodide (α-FAPbI3) (200), a nanoepitaxial PbS nanosheets-FAPbI3 heterostructure with low defect density is observed. Attribute to the epitaxial growth, PbS nanosheets-FAPbI3 hybrid polycrystalline films show decreased defects and better crystallization. Optimized perovskite solar cells perform both improved efficiency and stability, retaining 90% of initial photovoltaic conversion efficiency after being stored at 20 °C and 20% RH for 2500 h. Notably, the significantly improved stability is ascribed to the interfacial compression strain and chemical bonding between (200) planes of PbS nanosheets and α-FAPbI3 (200). This study provides insight into high-performance perovskite solar cells achieved by manipulating nanomaterial surfaces. 相似文献