High Optical Gain of Solution-Processed Mixed-Cation CsPbBr3 Thin Films towards Enhanced Amplified Spontaneous Emission

A solution-processed thin film made of all-inorganic CsPbBr₃ perovskite is a promising candidate for low-cost and flexible green-color lasers. However, the amplified spontaneous emission (ASE) of solution-processed CsPbBr₃ films still experiences a high threshold owing to poor morphology and insufficient optical gain. Here, a multiple-cation doping strategy is demonstrated to develop compact, smooth thin films of Cs_0.87(FAMA)_0.13PbBr₃/(NMA)₂PbBr₄ (FA: formamidinium; MA: methylammonium; NMA: naphthylmethylammonium) with a record high net modal optical gain of ≈ 3030 cm⁻¹ and low propagation loss of 1.0 cm⁻¹. The FA and MA cations improve the crystallization kinetics to form continuous films, and the NMA cations reduce the grain dimension, increase film dispersibility/uniformity, and enhance spatial confinement to promote optical gain. Room-temperature ASE is demonstrated under a low threshold of ≈ 3.8  µ J cm⁻² without degradation after four months of storage in glove box or excitation by 3 × 10⁷ laser pulses. These findings provide insights into enhancing the optical gain and lowering the threshold of perovskite lasers in terms of molecular synthesis and microstructure engineering.     

Expanded Phase Distribution in Low Average Layer-Number 2D Perovskite Films: Toward Efficient Semitransparent Solar Cells

The application of low average layer-number (〈n〉 ≤ 2) 2D perovskites in semitransparent photovoltaics (ST-PVs) has been hindered by their strong exciton binding energy and high electrical anisotropy. Here, the phase distribution is expanded fully and orderly to enable efficient charge transport in 2D (NMA)₂(MA)Pb₂I₇ (NMA: 1-naphthylmethylammonium, MA: CH₃NH₃⁺) perovskite films by regulating the sedimentation dynamics of organic cation-based colloids. Ammonium chloride is synergistically introduced to enhance the phase separation further and construct a favorable out-of-plane orientation. The wide and graded phase distribution well aligns the energy level to facilitate charge transfer. As a result, the first application of an average 〈n〉 = 2 2D perovskite is implemented in ST-PVs with visible power conversion efficiency (PCE) of 7.52% and high average visible transmittance (AVT) of 40.5%. This study offers a new candidate and an effective strategy for efficient and stable ST-PVs and is relevant to other perovskite optoelectronic devices.     

High Q-Factor and Low Threshold Continuous-Wave Near-Infrared Lasing with Quasi-2D Perovskites

Quasi-2D perovskites have shown great potential in achieving solution-processed electrically pumped laser diodes due to their multiple-quantum-well structure, which induces a carrier cascade process that can significantly enhance population inversion. However, continuous-wave (CW) optically pumped lasing has yet to be achieved with near-infrared (NIR) quasi-2D perovskites due to the challenges in obtaining high-quality quasi-2D films with suitable phase distribution and morphology. This study regulates the crystallization of a NIR quasi-2D perovskite ((NMA)₂FA_n−1Pb_nI_3n+1) using an 18-crown-6 additive, resulting in a compact and smooth film with a largely improved carrier cascade efficiency. The amplified spontaneous emission threshold of the film is reduced from 47.2 to 35.9 µJ cm⁻². Furthermore, by combining the film with a high-quality distributed feedback grating, this study successfully realizes a CW NIR laser of 809 nm at 110 K, with a high Q-factor of 4794 and a low threshold of 911.6 W cm⁻². These findings provide an important foundation for achieving electrically pumped laser diodes based on the unique quasi-2D perovskites.     

Self-Assembled Perovskite Nanoislands on CH3NH3PbI3 Cuboid Single Crystals by Energetic Surface Engineering

Organometal perovskite single crystals have been recognized as a promising platform for high-performance optoelectronic devices, featuring high crystallinity and stability. However, a high trap density and structural nonuniformity at the surface have been major barriers to the progress of single crystal-based optoelectronic devices. Here, the formation of a unique nanoisland structure is reported at the surface of the facet-controlled cuboid MAPbI₃ (MA = CH₃NH₃⁺) single crystals through a cation interdiffusion process enabled by energetically vaporized CsI. The interdiffusion of mobile ions between the bulk and the surface is triggered by thermally activated CsI vapor, which reconstructs the surface that is rich in MA and CsI with reduced dangling bonds. Simultaneously, an array of Cs-Pb-rich nanoislands is constructed on the surface of the MAPbI₃ single crystals. This newly reconstructed nanoisland surface enhances the light absorbance over 50% and increases the charge carrier mobility from 56 to 93 cm² V⁻¹ s⁻¹. As confirmed by Kelvin probe force microscopy, the nanoislands form a gradient band bending that prevents recombination of excess carriers, and thus, enhances lateral carrier transport properties. This unique engineering of the single crystal surface provides a pathway towards developing high-quality perovskite single-crystal surface for optoelectronic applications.     

Highly Sensitive Self-Powered 2D Perovskite Photodiodes with Dual Interface Passivations

2D perovskites have attracted intensive attention by virtue of their excellent optical and electrical properties along with good stabilities. Herein, a highly sensitive self-powered photodiode based on (PEA)₂(MA)₄Pb₅I₁₆ (PEA=C₆H₅(CH₂)NH₃, MA=CH₃NH₃) 2D perovskite is demonstrated by dual interface passivations. The Al₂O₃ bottom passivation can reduce the pinhole defects in the 2D perovskite film and suppress the trap-related recombination loss, bringing forward much reduced dark current and increased photocurrent. The poly (methyl methacrylate) (PMMA) top passivation can encapsulate the 2D perovskite film and thus improve the stability of the device. These results show that the 2D perovskite-based photodiode with dual interface passivations exhibits a large photo-to-dark current ratio of 10⁷, a fast response speed of 597 ns and a linear dynamic range of 160 dB without bias. Responsivity (R) and detectivity (D*) respectively reach 0.36 A W⁻¹ and 5.4 × 10¹² Jones under 532 nm laser illumination at a power density of 1.5 nW cm⁻². Moreover, the dual interface passivated device exhibits good stabilities. This study paves the road for developing low-cost, low-power, solution processed image sensors.     

Grain structure control and greatly enhanced carrier transport by CH3NH3PbCl3 interlayer in two-step solution processed planar perovskite solar cells

We report that the use of a CH₃NH₃PbCl₃ interlayer onto the PEDOT:PSS layer in the two-step solution deposition of CH₃NH₃Pbl₃ for planar p-i-n type perovskite solar cells (PSCs) can lead to a dramatic enhancement of short-circuit current density (J_sc) by 52.8% from 13.07 mA cm⁻² to 19.98 mA cm⁻². While the absorption and thus the composition of the perovskite layers remain unchanged, Incident photon-to-current efficiency (IPCE) measurement results reveal much enhanced carrier transport, which in turn can be correlated to the larger and more columnar grain structure in the perovskite layer with the use of the CH₃NH₃PbCl₃ interlayer. On the other hand, the two-step solution processed perovskite layers without the CH₃NH₃PbCl₃ interlayer exhibit smaller and more cross-hatching grain structure and yield significantly smaller J_sc. Therefore our results revealed clearly that the insertion of CH₃NH₃PbCl₃ interlayer, which affects the nucleation dynamics, may control the grain structure of the two-step solution processed perovskite layers and improve dramatically the photovoltaic performance of the resultant planar p-i-n type PSCs. Our CH₃NH₃PbCl₃ interlayer may thus serve as an effective method for p-i-n PSCs to achieve high J_sc with thicker perovskite layer.     

Exciton Dynamics and Optically Pumped Lasing in 1-Naphthylmethylamine-Based Quasi-2D Perovskite Films

Films of the quasi-2D perovskite based on 1-naphthylmethylamine (NMA) are promising as the gain medium for optically pumped lasing and future electrically pumped lasing because of its low lasing threshold and small electroluminescence efficiency rolloff. However, reasons for the low threshold and small efficiency rolloff are still unclear. Therefore, exciton dynamics are investigated in NMA-based quasi-2D perovskite films. It is found that quenching of bright excitons by other excitons or charge carriers is unlikely in NMA-based quasi-2D perovskite films, which is one reason for the low lasing threshold and small efficiency rolloff. Moreover, thermally stimulated current measurements reveal that the defect levels inside the band gap of the NMA-based quasi-2D perovskite are shallow, with a depth of ≈0.3 eV, causing a decrease in nonradiative exciton recombination through the defects. Therefore, population inversion can be easily achieved, leading to the low lasing threshold as well. For fabrication of NMA-based quasi-2D perovskite laser devices with even lower lasing thresholds, a circular-shaped optical resonator, and small-molecule-based defect passivation are used. Optically pumped lasing can be obtained from these devices, with a threshold of ≈1 µJ cm⁻², which is one of the lowest values ever reported in any perovskite lasers.     

An Interdiffusion Method for Highly Performing Cesium/Formamidinium Double Cation Perovskites

The fabrication of high‐quality cesium (Cs)/formamidinium (FA) double‐cation perovskite films through a two‐step interdiffusion method is reported. Cs_x FA_1‐x PbI_{3‐y(1‐x )}Br_{y(1‐x )} films with different compositions are achieved by controlling the amount of CsI and formamidinium bromide (FABr) in the respective precursor solutions. The effects of incorporating Cs⁺ and Br^? on the properties of the resulting perovskite films and on the performance of the corresponding perovskite solar cells are systematically studied. Small area perovskite solar cells with a power conversion efficiency (PCE) of 19.3% and a perovskite module (4 cm²) with an aperture PCE of 16.4%, using the Cs/FA double cation perovskite made with 10 mol% CsI and 15 mol% FABr (Cs_0.1FA_0.9PbI_2.865Br_0.135) are achieved. The Cs/FA double cation perovskites show negligible degradation after annealing at 85 °C for 336 h, outperforming the perovskite materials containing methylammonium (MA).     

Vertical-type 3D/Quasi-2D n-p Heterojunction Perovskite Photodetector

This research demonstrates a state-of-the-art vertical-transport photodetector with an n-type 3D MAPbI₃/p-type quasi-2D (Q-2D) BA₂MA₂Pb₃I₁₀ perovskite heterojunction. This structure introduces a ≈0.6 V built-in electric field at the n-p junction that greatly improves the characteristics of the perovskite photodetector, and the presence of Q-2D perovskite on the surface improves the life. The electrical polarities of the 3D and the Q-2D perovskite layers are simply controlled by self-constituent doping, making clearly defined n-p characteristics. Doctor-blade coating is used to fabricate the photodetector with a large area. The Q-2D materials with highly oriented (040) Q-2D (n = 2,3) planes are near the surface, and the (111) preferred planes mixed with high index Q-2D materials (n = 4,5) are found near the 3D/Q-2D interface. The stacking and interface are beneficial for carrier extraction and transport, yielding an external quantum efficiency of 77.9%, a carrier lifetime long as 295.7 ns, and a responsibility of 0.41 A W⁻¹. A low dark current density of 6.2 × 10⁻⁷ mA cm⁻² and a high detectivity of 2.82 × 10¹³ Jones are obtained. Rise time and fall time are fast as 1.33 and 10.1 µs, respectively. The results show the application potential of 3D/Q-2D n-p junction perovskite photodetectors.     

High-performance formamidinium-based perovskite photodetectors fabricated via doctor-blading deposition in ambient condition

High-purity black α-phase formamidinium lead iodide (FAPbI₃, FA is NH₂CHNH⁺) perovskite polycrystalline film was prepared using low-cost, high-output doctor-blading deposition technique in ambient condition without further annealing process and any additives. The resulting α-phase FAPbI₃ perovskite has a large domain size over 200 μm with (00l) preferential crystallographic orientation. The photodetectors with an extremely simple structure were fabricated via doctor-blading, resulting in a responsivity as high as 11.46 AW⁻¹, a ratio of photocurrent/dark current (I_light/I_dark) as large as 10⁵ and a response speed as fast as 5.4 ms. The results suggest that low-cost doctor-blading technique in ambient condition potentially pave a way to eliminate the yellow δ-phase FAPbI₃ and get a high-quality black α-FAPbI₃ perovskite film, as well as fabricate efficient FAPbI₃ perovskite optoelectronic devices.     

δ‐CsPbI3 Intermediate Phase Growth Assisted Sequential Deposition Boosts Stable and High‐Efficiency Triple Cation Perovskite Solar Cells

Cs/FA/MA triple cation perovskite films have been well developed in the antisolvent dripping method, attributable to its outstanding photovoltaic and stability performances. However, a facile and effective strategy is still lacking for fabricating high‐quality large‐grain triple cation perovskite films via sequential deposition method a, which is one of the key technologies for high efficiency perovskite solar cells. To address this issue, a δ‐CsPbI₃ intermediate phase growth (CsPbI₃‐IPG) assisted sequential deposition method is demonstrated for the first time. The approach not only achieves incorporation of controllable cesium into (FAPbI₃)_1–x(MAPbBr₃)_x perovskite, but also enlarges the perovskite grains, manipulates the crystallization, modulates the bandgap, and improves the stability of final perovskite films. The photovoltaic performances of the devices based on these Cs/FA/MA perovskite films with various amounts of the δ‐CsPbI₃ intermediate phase are investigated systematically. Benefiting from moderate cesium incorporation and intermediate phase‐assisted grain growth, the optimized Cs/FA/MA perovskite solar cells exhibit a significantly improved power conversion efficiency and operational stability of unencapsulated devices. This facile strategy provides new insights into the compositional engineering of triple or quadruple cation perovskite materials with enlarged grains and superior stability via a sequential deposition method.     

Centimeter-Sized Molecular Perovskite Crystal for Efficient X-Ray Detection

Molecular perovskites have demonstrated great potential for ferroelectrics and nonlinear optics; however, their charge transport properties for optoelectronics have rarely been explored. Here, understanding of charge transport behavior of molecular perovskite under X-ray excitation based on centimeter-scale TMCM-CdCl₃ (TMCM⁺, trimethylchloromethyl ammonium) single crystal is demonstrated. The crystal is fabricated from an aqueous solution and exhibits a large bandgap of 5.51 eV, with the valence band maximum mainly dominated by the Cl-p/Cd-d states and the conduction band minimum primarily by Cd-s/Cl-p states. Charge mobility exceeding 40 cm² V⁻¹ s⁻¹ and mobility–lifetime (µτ) product on the order of 10⁻⁴ cm² V⁻¹ for the crystal are observed. These excellent optoelectronic properties translate to an efficient photoresponse under X-ray excitation, with the sensitivity reaching 128.9 ± 4.64 µC Gy_air⁻¹ cm⁻² [fivefold higher than that of the commercialized amorphous selenium (α-Se)] and a low detection limit of 1.06 μC Gy_air⁻¹ s⁻¹ (10 V bias). This work pioneers a superior metal-based molecular perovskite single-crystal based paradigm for optoelectronic investigation, which may lead to the discovery of a new generation of X-ray detection and imaging materials.     

Direct Growth of Pyramid‐Textured Perovskite Single Crystals: A New Strategy for Enhanced Optoelectronic Performance

Even though there have been a few reports of substrate surface texturing of thin film perovskite solar cells to enhance their light trapping, there has been no direct texturing of the perovskite material, let alone perovskite single crystals (SCs). Herein, a method to prepare a pyramid‐structured perovskite CH₃NH₃PbX₃ (CH₃NH₃⁺ = MA, X = I, Br) SC surface with minimized light reflection and maximized incident light harvesting is reported. Specifically, a hard template is used to directly transfer the pyramidal texture onto the MAPbX₃ SC during its growth. A well‐shaped pyramidal texture is formed on the single‐crystal surface leading to improved light trapping. The textured MAPbBr₃ SC shows good crystallinity, prolonged carrier lifetime, and improved carrier mobility. Furthermore, the photodetector made from the textured SC shows enhanced responsivity of 321 A W^?1 and external quantum efficiency of 7191%, about two times higher than that of a control device. This method may be used to directly fabricate desired textures on general single crystal surfaces.     

Organic–Inorganic Perovskite Light‐Emitting Electrochemical Cells with a Large Capacitance

While perovskite light‐emitting diodes typically made with high work function anodes and low work function cathodes have recently gained intense interests. Perovskite light‐emitting devices with two high work function electrodes with interesting features are demonstrated here. Firstly, electroluminescence can be easily obtained from both forward and reverse biases. Secondly, the results of impedance spectroscopy indicate that the ionic conductivity in the iodide perovskite (CH₃NH₃PbI₃) is large with a value of ≈10^?8 S cm^?1. Thirdly, the shift of the emission spectrum in the mixed halide perovskite (CH₃NH₃PbI_3?xBr_x) light‐emitting devices indicates that I^? ions are mobile in the perovskites. Fourthly, this work shows that the accumulated ions at the interfaces result in a large capacitance (≈100 μF cm^?2). The above results conclusively prove that the organic–inorganic halide perovskites are solid electrolytes with mixed ionic and electronic conductivity and the light‐emitting device is a light‐emitting electrochemical cell. The work also suggests that the organic–inorganic halide perovskites are potential energy‐storage materials, which may be applicable in the field of solid‐state supercapacitors and batteries.     

Harnessing Selective Exsolution of Sn Metal to Enhance Electrical Conductivity in Oxygen-Deficient Perovskite Stannates

The versatile application of newly discovered oxide semiconductors calls for developing a simple process to generate conducting carriers. High-temperature reduction treatment leads to electrical conduction in perovskite stannate semiconductors, but carrier concentration is poorly controlled and inconsistently reported in BaSnO_3−δ films after the reduction process so far. Here, a new strategy to enhance the electrical conductivity of BaSnO_3−δ films is demonstrated by exploiting selective exsolution of Sn metals in the perovskite framework. Due to strong dependence of conductivity on initial Sn/Ba cation ratio in the reduced BaSnO_3−δ films, interestingly, only Sn-excess BaSnO_3−δ films show a dramatic increase of carrier concentration ( ∆ n_3D  = 5–7 × 10¹⁹ cm⁻³) after high-temperature reduction; exceptionally high electrical conductivity (σ  ≈  6000 S cm⁻¹) is achieved in reduced Sn-excess (La, Ba)SnO_3−δ films, which exceed full activation of La dopants in untreated (La, Ba)SnO₃. By multiple characterizations combined with theoretical calculation, it is disclosed that a small fraction of segregated β-Sn nanoparticles is likely to contribute the additional source of n_3D in the BaSnO_3−δ matrix as a result of spontaneous charge transfer from the segregated β-Sn metallic phase to BaSnO_3−δ. These original results propose a simple strategy to further increase electrical conductivity in perovskite oxide semiconductors by non-stoichiometry-driven metal exsolution.     

Flexible,hole transporting layer-free and stable CH3NH3PbI3/PC61BM planar heterojunction perovskite solar cells

Hole transporting layer (HTL)-free CH₃NH₃PbI₃/PC₆₁BM planar heterojunction perovskite solar cells were fabricated with the configuration of ITO/CH₃NH₃PbI₃/PC₆₁BM/Al. The devices present a remarkable power conversion efficiency (PCE) of 11.7% (12.5% best) under AM 1.5G 100 mW cm⁻² illumination. Moreover, the HTL-free perovskite solar cells on flexible PET substrates are first demonstrated, achieving a power conversion efficiency of 9.7%. The element distribution in the HTL-free perovskite solar cell was further investigated. The results indicated that the PbI₂ enriched near the PC₆₁BM side for chlorobenzene treatment via the fast deposition crystallization method. Without using HTL on the ITO, the device is stable with comparison to that with poly(3,4-ethylenedioxylenethiophene): poly(styrene sulfonate) (PEDOT:PSS) as HTL. In addition, the fabricating time of the whole procedure from ITO substrate cleaning to device finishing fabrication only cost about 3 h for our mentioned devices, which is much more rapid than other structure devices containing other transporting layer. The high efficient and stable HTL-free CH₃NH₃PbI₃/PC₆₁BM planar heterojunction perovskite solar cells with the advantage of saving time and cost provide the potential for commercialization printing electronic devices.     

Organic Cation‐Dependent Degradation Mechanism of Organotin Halide Perovskites

The applications of organotin halide perovskites are limited because of their chemical instability under ambient conditions. Upon air exposure, Sn²⁺ can be rapidly oxidized to Sn⁴⁺, causing a large variation in the electronic properties. Here, the role of organic cations in degradation is investigated by comparing methylammonium tin iodide (MASnI₃) and formamidinium tin iodide (FASnI₃). Through chemical analyses and theoretical calculations, it is found that the organic cation strongly influences the oxidation of Sn²⁺ and the binding of H₂O molecules to the perovskite lattice. On the one hand, Sn²⁺ can be easily oxidized to Sn⁴⁺ in MASnI₃, and replacing MA with FA reduces the extent of Sn oxidation; on the other hand, FA forms a stronger hydrogen bond with H₂O than does MA, leading to partial expansion of the perovskite network. The two processes compete in determining the material's conductivity. It is noted that the oxidation is a difficult process to prevent, while the water effect can be largely suppressed by reducing the moisture level. As a result, FASnI₃‐based conductors and photovoltaic cells exhibit much better reproducibility as compared to MASnI₃‐based devices. This study sheds light on the development of stable Pb‐free perovskite optoelectronic devices through new material design.     

Improving the Extraction of Photogenerated Electrons with SnO2 Nanocolloids for Efficient Planar Perovskite Solar Cells

Great attention to cost‐effective high‐efficiency solar power conversion of trihalide perovskite solar cells (PSCs) has been hovering at high levels in the recent 5 years. Among PSC devices, admittedly, TiO₂ is the most widely used electron transport layer (ETL); however, its low mobility which is even less than that of CH₃NH₃PbI₃ makes it not an ideal material. In principle, SnO₂ with higher electron mobility can be regarded as a positive alternative. Herein, a SnO₂ nanocolloid sol with ≈3 nm in size synthesized at 60 °C was spin‐coated onto the fuorine‐doped tin oxide (FTO) glass as the ETL of planar CH₃NH₃PbI₃ perovskite solar cells. TiCl₄ treatment of SnO₂‐coated FTO is found to improve crystallization and increase the surface coverage of perovskites, which plays a pivotal role in improving the power conversion efficiency (PCE). In this report, a champion efficiency of 14.69% (J_sc = 21.19 mA cm^?2, V_oc = 1023 mV, and FF = 0.678) is obtained with a metal mask at one sun illumination (AM 1.5G, 100 mW cm^?2). Compared to the typical TiO₂, the SnO₂ ETL efficiently facilitates the separation and transportation of photogenerated electrons/holes from the perovskite absorber, which results in a significant enhancement of photocurrent and PCE.     

Photovoltaic and Amplified Spontaneous Emission Studies of High‐Quality Formamidinium Lead Bromide Perovskite Films

This study demonstrates the formation of extremely smooth and uniform formamidinium lead bromide (CH(NH₂)₂PbBr₃ = FAPbBr₃) films using an optimum mixture of dimethyl sulfoxide and N,N‐dimethylformamide solvents. Surface morphology and phase purity of the FAPbBr₃ films are thoroughly examined by field emission scanning electron microscopy and powder X‐ray diffraction, respectively. To unravel the photophysical properties of these films, systematic investigation based on time‐integrated and time‐dependent photoluminescence studies are carried out which, respectively, bring out relatively lower nonradiative recombination rates and long lasting photogenerated charge carriers in FAPbBr₃ perovskite films. The devices based on FTO/TiO₂/FAPbBr₃/spiro‐OMeTAD/Au show highly reproducible open‐circuit voltage (V_oc) of 1.42 V, a record for FAPbBr₃‐based perovskite solar cells. V_oc as a function of illumination intensity indicates that the contacts are very selective and higher V_oc values are expected to be achieved when the quality of the FAPbBr₃ film is further improved. Overall, the devices based on these films reveal appreciable power conversion efficiency of 7% under standard illumination conditions with negligible hysteresis. Finally, the amplified spontaneous emission (ASE) behavior explored in a cavity‐free configuration for FAPbBr₃ perovskite films shows a sharp ASE threshold at a fluence of 190 μJ cm^?2 with high quantum efficiency further confirming the high quality of the films.     

Designed Giant Room-Temperature Electrocaloric Effects in Metal-Free Organic Perovskite [MDABCO](NH4)I3 by Phase–Field Simulations

Achieving a colossal room-temperature electrocaloric effect is essential for practical solid-state refrigeration applications with low-cost and high-efficiency. Here, through the design of applying external stimuli (hydrostatic pressure and misfit strain), giant room-temperature electrocaloric effects in the bulk and thin film of metal-free organic perovskite [MDABCO](NH₄)I₃ are obtained by using a combination of thermodynamic calculations and phase–field simulations. Under the hydrostatic pressure of 1 GPa, there emerges excellent room-temperature (300 K) electrocaloric performance with the temperature change (ΔT) of 8.41 K at 30 MV m⁻¹ and electrocaloric strength (ΔT/ΔE) of 0.63 K m MV⁻¹ at 10 MV m⁻¹, respectively. The prominent electrocaloric effects of MDABCO(NH₄)I₃ may be related to its rapid change rates of free energy barrier height. Additionally, it can be found that some stripe domains and non-180° domain walls form in the [MDABCO](NH₄)I₃ bulk, which is consistent with the experimental results. This work not only provides new insights into organic perovskite [MDABCO](NH₄)I₃, but also guides for further developing to realize remarkable room-temperature electrocaloric cooling.