Precursor Engineering for All‐Inorganic CsPbI2Br Perovskite Solar Cells with 14.78% Efficiency

The optoelectronic properties of perovskite films are closely related to the film quality, so depositing dense, uniform, and stable perovskite films is crucial for fabricating high‐performance perovskite solar cells (PSCs). CsPbI₂Br perovskite, prized for its superb stability toward light soaking and thermal aging, has received a great deal of attention recently. However, the air instability and poor performance of CsPbI₂Br PSCs are hindering its further progress. Here, an approach is reported for depositing high‐quality CsPbI₂Br films via the Lewis base adducts PbI₂(DMSO) and PbBr₂(DMSO) as precursors to slow the crystallization of the perovskite film. This process produces CsPbI₂Br films with large‐scale crystalline grains, flat surfaces, low defects, and long carrier lifetimes. More interestingly, PbI₂(DMSO) and PbBr₂(DMSO) adducts could significantly improve the stability of CsPbI₂Br films in air. Using films prepared by this technique, a power conversion efficiency (PCE) of 14.78% is obtained in CsPbI₂Br PSCs, which is the highest PCE value reported for CsPbI₂Br‐based PSCs to date. In addition, the PSCs based on DMSO adducts show an extended operational lifetime in air. These excellent performances indicate that preparing high‐quality inorganic perovskite films by using DMSO adducts will be a potential method for improving the performance of other inorganic PSCs.     

Dopant-Free Polymer HTM-Based CsPbI2Br Solar Cells with Efficiency Over 17% in Sunlight and 34% in Indoor Light

To abate the issue of moisture-assisted phase transition of CsPbI₂Br, caused by hygroscopic dopants used in the hole-transporting material (HTM), developing dopant-free HTMs is necessary. In this work, a new polymer, PDTDT, is developed as a dopant-free HTM for CsPbI₂Br solar cells, and the device performance and stability are systematically compared with cells employing dopant-free P3HT. CsPbI₂Br solar cells using PDTDT show an efficiency of 17.36% with V_OC of 1.42 V and FF of 81.29%, which is one of the highest values for CsPbI₂Br cells. Moreover, a record-high efficiency of 34.20% with V_OC of 1.14 V under 200 lux indoor light illumination and efficiency of 14.54% (certified efficiency of 13.86%) for a 1 cm² device under one sun are accomplished. Importantly, PDTDT shows superior/comparable device stability to P3HT, promising its potential to be an alternative to popular doped Spiro-OMeTAD and P3HT HTM.     

Uniform Stepped Interfacial Energy Level Structure Boosts Efficiency and Stability of CsPbI2Br Solar Cells

All-inorganic CsPbI₂Br perovskite has attracted great attention as an absorber for perovskite solar cells (PSCs) due to its excellent thermal and light resistance. However, its device performance is restricted by the large energy level offset between CsPbI₂Br and the most commonly used hole-transporting layer (HTL). Herein, multicarbazolyl-substituted benzonitrile (4t-5CzBn) is inserted into the interface between CsPbI₂Br and HTL to form a uniform stepped (0.24 eV) interfacial energy level structure, which reduces the energy loss and boosts the hole extraction of CsPbI₂Br PSCs. The incorporation of 4t-5CzBn induces the increase in open-circuit voltage and fill factor from 1.256 V and 74.5% to 1.335 V and 82.3%, respectively. The optimized device achieves a power conversion efficiency of 17.34%, which is among the highest reported values of CsPbI₂Br PSCs. Besides the energy level tuning effect, the tert-butyl groups in 4t-5CzBn improve the moisture-resistance of CsPbI₂Br PSCs. The unencapsulated device maintains over 75% of its initial efficiency after 700 h storage in air. These results demonstrate that the rational tuned energy level step benefits the performance improvement of CsPbI₂Br PSCs.     

One-Source Strategy Boosting Dopant-Free Hole Transporting Layers for Highly Efficient and Stable CsPbI2Br Perovskite Solar Cells

All-inorganic perovskites have emerged as promising photovoltaic materials due to their superior thermal stability compared to their organic–inorganic hybrid counterparts. However, the inferior film quality and doped hole transport layer (HTL) have a strong tendency to degrade the perovskite under high temperatures or harsh operating conditions. To solve these problems, a one-source strategy using the same polymer donor material (PDM) to simultaneously dope CsPbI₂Br perovskite films via antisolvent engineering and fabricating the HTL is proposed. The doping assists perovskite film growth and forms a top–down gradient distribution, generating CsPbI₂Br with enlarged grain size and reduced defect density. The PDM as the HTL suppresses the energy barrier and forms favorable electrical contacts for hole extraction, and assemble into a fingerprint-like morphology that improves the conductivity, facilitating the creation of a dopant-free HTL. Based on this one-source strategy using PBDB-T as PDM, the CsPbI₂Br perovskite solar cell with a dopant-free HTL achieves a power conversion efficiency (PCE) of 16.40%, which is one of the highest PCEs reported among all-inorganic CsPbI₂Br pero-SCs with a dopant-free HTL. Importantly, the devices exhibit the highest thermal stability at 85 °C and operational stability under continuous illumination even with Ag as the top electrode and present good universality.     

Controlled n‐Doping in Air‐Stable CsPbI2Br Perovskite Solar Cells with a Record Efficiency of 16.79%

Cesium‐based inorganic perovskites, such as CsPbI₂Br, are promising candidates for photovoltaic applications owing to their exceptional optoelectronic properties and outstanding thermal stability. However, the power conversion efficiency of CsPbI₂Br perovskite solar cells (PSCs) is still lower than those of hybrid PSCs and inorganic CsPbI₃ PSCs. In this work, passivation and n‐type doping by adding CaCl₂ to CsPbI₂Br is demonstrated. The crystallinity of the CsPbI₂Br perovskite film is enhanced, and the trap density is suppressed after adding CaCl₂. In addition, the Fermi level of the CsPbI₂Br is changed by the added CaCl₂ to show heavy n‐type doping. As a result, the optimized CsPbI₂Br PSC shows a highest open circuit voltage of 1.32 V and a record efficiency of 16.79%. Meanwhile, high air stability is demonstrated for a CsPbI₂Br PSC with 90% of the initial efficiency remaining after more than 1000 h aging in air.     

Anti-Dissociation Passivation via Bidentate Anchoring for Efficient Carbon-Based CsPbI2.6Br0.4 Solar Cells

Molecular passivation on perovskite surface is an effective strategy to inhibit surface defect-assisted recombination and reduce nonradiative recombination loss in perovskite solar cells (PSCs). However, the majority of passivating molecules bind to perovskite surface through weak interactions, resulting in weak passivation effects and susceptible to interference from various factors. Especially in carbon-based perovskite solar cells (C-PSCs), the molecular passivation effect is more susceptible to disturbance in subsequent harsh preparation of carbon electrodes via blade-coating route. Herein, bidentate ligand 2,2′-Bipyridine (2Bipy) is explored to passivate surface defects of CsPbI_2.6Br_0.4 perovskite films. The results indicate that compared with monodentate pyridine (Py), bidentate 2Bipy shows a stronger chelation with uncoordinated Pb(II) defects and exhibits a greater passivation effect on perovskite surface. As a result, 2Bipy-modified perovskite films display a significantly boosted photoluminescence lifetime, accompanied by excellent anchoring stability and anti-dissociation of passivating molecules. Meanwhile, the moisture resistance of the 2Bipy-modified perovskite films is also significantly enhanced. Consequently, the efficiency of C-PSCs is improved to 16.57% (J_sc = 17.16 mA cm⁻², V_oc = 1.198 V, FF = 80.63%). As far as it is known, this value represents a new record efficiency for hole transport material-free inorganic C-PSCs.     

Moisture Induced Secondary Crystal Growth Boosting the Efficiency of Hole Transport Layer-Free Carbon-Based Perovskite Solar Cells beyond 19.5%

Hole transport layer (HTL)-free carbon-based perovskite solar cells (C-PSCs) show promising commercial application potential due to their attractive advantages of low cost and high stability. However, the power conversion efficiency of C-PSCs is relatively low, mainly due to the poor crystalline quality of the C-PSC applicable perovskite films and the energy level mismatch between the perovskite and carbon electrode. Herein, a moisture-induced secondary crystal growth strategy to simultaneously improve the crystalline quality and optimize the energy level of perovskite film is proposed. The presence of moisture renders the surface of perovskite grains reactive by forming metastable intermediates. It is demonstrated that the commonly considered harmful intermediates can trigger secondary crystal growth. This secondary growth strategy results in improved crystallinity, larger grain size, and better morphology of the perovskite films, which reduce the density of defect states and also benefit the interface contact between the perovskite film and carbon electrode. Furthermore, the secondary growth modulates the surface composition of the film to achieve an optimized energy level alignment. As a result, this secondary growth strategy reduces the charge recombination loss and accelerates the charge transport process in C-PSCs. Consequently, a new record efficiency of 19.52% is achieved for HTL-free C-PSCs.     

Highly-Stable CsPbI3 Perovskite Solar Cells with an Efficiency of 21.11% via Fluorinated 4-Amino-Benzoate Cesium Bifacial Passivation

The poor interface quality between cesium lead triiodide (CsPbI₃) perovskite and the electron transport layer limits the stability and efficiency of CsPbI₃ perovskite solar cells (PSCs). Herein, a 4-amino-2,3,5,6-tetrafluorobenzoate cesium (ATFC) is designed as a bifacial defect passivator to tailor the perovskite/TiO₂ interface. The comprehensive experiments demonstrate that ATFC can not only optimize the conductivity, electron mobility, and energy band structure of the TiO₂ layer by passivation of the undercoordinated Ti⁴⁺, oxygen vacancy (V_O), and free  OH defects but also promote the yield of high-quality CsPbI₃ film by synergistic passivation of undercoordinated Pb²⁺ defects with the  CO group and F atom, and limiting I⁻ migration via F···I interaction. Benefiting from the above interactions, the ATFC-modified CsPbI₃ device yields a champion power conversion efficiency (PCE) of 21.11% and an excellent open-circuit voltage (V_OC) of 1.24 V. Meanwhile, the optimized CsPbI₃ PSC maintains 92.74% of its initial efficiency after aging 800 h in air atmosphere, and has almost no efficiency attenuation after tracking at maximum power point for 350 h.     

In-Situ Hot Oxygen Cleansing and Passivation for All-Inorganic Perovskite Solar Cells Deposited in Ambient to Breakthrough 19% Efficiency

All-inorganic perovskite CsPbI₃ has attracted extensive attention recently because of its excellent thermal and chemical stability. However, its photovoltaic performance is hindered by large energy losses (E_loss) due to the presence of point defects. In addition, hydroiodic acid (HI) is currently employed as a hydrolysis-derived precursor of intermediate compounds, which often leads to a small amount of organic residue, thus undermining its chemical stability. Herein, an in-situ hot oxygen cleansing with superior passivation (HOCP) for the triple halide-mixed CsPb(I_2.85Br_0.149Cl_0.001) perovskite solar cells (abbreviated as CsPbTh₃) deposited in an ambient atmosphere to reduce the E_loss to as low as 0.48 eV for the power conversion efficiency (PCE) to reach 19.65% is demonstrated. It is found that the hot oxygen treatment effectively removes the organic residues. Meanwhile, it passivates halide vacancies, hence reduces the trap states and nonradiative recombination losses within the perovskite layer. As a result, the PCE is increased significantly from 17.15% to 19.65% under 1 sun illumination with an open-circuit voltage enlarged to 1.23 from 1.14 V, which corresponds to an E_loss reduction from 0.57 to 0.48 eV. Also, the HOCP-treated devices exhibit better long-term stability. This insight should pave a way for decreasing nonradiative charge recombination losses for high-performance inorganic perovskite photoelectronics.     

Hybrid Perovskite Quantum Dot/Non-Fullerene Molecule Solar Cells with Efficiency Over 15%

Organic-inorganic hybrid film using conjugated materials and quantum dots (QDs) are of great interest for solution-processed optoelectronic devices, including photovoltaics (PVs). However, it is still challenging to fabricate conductive hybrid films to maximize their PV performance. Herein, for the first time, superior PV performance of hybrid solar cells consisting of CsPbI₃ perovskite QDs and Y6 series non-fullerene molecules is demonstrated and further highlights their importance on hybrid device design. In specific, a hybrid active layer is developed using CsPbI₃ QDs and non-fullerene molecules, enabling a type-II energy alignment for efficient charge transfer and extraction. Additionally, the non-fullerene molecules can well passivate the QDs, reducing surface defects and energetic disorder. The champion CsPbI₃ QD/Y6-F hybrid device has a record-high efficiency of 15.05% for QD/organic hybrid PV devices, paving a new way to construct solution-processable hybrid film for efficient optoelectronic devices.     

Inorganic Ammonium Halide Additive Strategy for Highly Efficient and Stable CsPbI3 Perovskite Solar Cells

All-inorganic perovskite cesium lead iodide (CsPbI₃) exhibits excellent prospects for commercial application as a light absorber in single-junction or tandem solar cells due to its outstanding thermal stability and proper bandgap. However, the device performance of CsPbI₃-based perovskite solar cells (PSCs) is still restricted by the unsatisfactory crystal quality and severe non-radiative recombination. Herein, inorganic additive ammonium halides are introduced into the precursor solution to regulate the nucleation and crystallization of the CsPbI₃ film by exploiting the atomic interaction between the ammonium group and the Pb–I framework. The grain boundaries and interfacial contact of the CsPbI₃ film have been improved, which leads to significant suppression in the non-radiative recombination and an enhancement in the charge transport ability. With these benefits, a high efficiency of 18.7% together with an extraordinarily high fill factor of 0.83–0.84 has been achieved, comparable to the highest records reported so far. Moreover, the cell exhibits ultra-high photoelectrical stability under continuous light illumination and high bias voltage with 96% of its initial power-conversion efficiency being sustained after 2000 h operation, even superior to the world-champion CsPbI₃ solar cell. The findings are promising for the development and application of all-inorganic PSCs using a simple inorganic additive strategy.     

Interfacial Energy Level Alignment and Defect Passivation by Using a Multifunctional Molecular for Efficient and Stable Perovskite Solar Cells

Tin oxide (SnO₂) is currently the dominating electron transport material (ETL) used in state-of-the-art perovskite solar cells (PSCs). However, there are amounts of defects distributed at the interface between ETL and perovskite to deteriorate PSC performance. Herein, a molecule bridging layer is built by incorporating 2,5-dichloroterephthalic acid (DCTPA) into the interface between the SnO₂ and perovskites to achieve better energy level alignment and superior interfacial contact. The multifunctional molecular bridging layer not only can passivate the trap states of Sn dangling bonds and oxygen vacancies resulting in improved conductivity and the electron extraction of SnO₂ but also can regulate the perovskite crystal growth and reduce defect-assisted nonradiative recombination due to its strong interaction with undercoordinated lead ions. As a result, the DCTPA-modified PSCs achieve champion power conversion efficiencies (PCEs) of 23.25% and 20.23% for an active area of 0.15 cm² device and 17.52 cm² mini-module, respectively. Moreover, the perovskite films and PSCs based on DCTPA modification show excellent long-term stability. The unencapsulated target device can maintain over 90% of the initial PCE after 1000 h under ambient air. This strategy guides design methods of molecule bridging layer at the interface between SnO₂ and perovskite to improve the performance of PSCs .     

All-Inorganic CsPbI3 Quantum Dot Solar Cells with Efficiency over 16% by Defect Control

All-inorganic CsPbI₃ quantum dots (QDs) have shown great potential in photovoltaic applications. However, their performance has been limited by defects and phase stability. Herein, an anion/cation synergy strategy to improve the structural stability of CsPbI₃ QDs and reduce the pivotal iodine vacancy (V_I) defect states is proposed. The Zn-doped CsPbI₃ (Zn:CsPbI₃) QDs have been successfully synthesized employing ZnI₂ as the dopant to provide Zn²⁺ and extra I⁻. Theoretical calculations and experimental results demonstrate that the Zn:CsPbI₃ QDs show better thermodynamic stability and higher photoluminescence quantum yield (PLQY) compared to the pristine CsPbI₃ QDs. The doping of Zn in CsPbI₃ QDs increases the formation energy and Goldschmidt tolerance factor, thereby improving the thermodynamic stability. The additional I⁻ helps to reduce the V_I defects during the synthesis of CsPbI₃ QDs, resulting in the higher PLQY. More importantly, the synergistic effect of Zn²⁺ and I⁻ in CsPbI₃ QDs can prevent the iodine loss during the fabrication of CsPbI₃ QD film, inhibiting the formation of new V_I defect states in the construction of solar cells. Consequently, the anion/cation synergy strategy affords the CsPbI₃ quantum dot solar cells (QDSC) a power conversion efficiency over 16%, which is among the best efficiencies for perovskite QDSCs.     

Blade-Coated Carbon Electrode Perovskite Solar Cells to Exceed 20% Efficiency Through Protective Buffer Layers

Perovskite solar cells with carbon electrode have a commercial impact because of their facile scalability, low-cost, and stability. In these devices, it remains a challenge to design an efficient hole transport layer (HTL) for robust interfacing with perovskite on one side and carbon on another. Herein, an organic/inorganic double planar HTL is constructed based on polythiophene (P3HT) and nickel oxide (NiOx) nanoparticles to address the named challenge. Through adding an alkyl ammonium bromide (CTAB) modified NiOx nanoparticle layer on P3HT, the planar HTL achieves a cascade type-II energy level alignment at the perovskite/HTL interfaces and a preferential ohmic contact at NiOx/carbon electrode, which greatly benefits in charge collection while suppressing charge transfer recombination. Besides, compared with the single P3HT layer, the planar composite enables a robust interfacial contact by protecting perovskite from being corroded by carbon paste during fabrication. As a result, the blade-coated FA_0.6MA_0.4PbI₃ perovskite solar cells (fabricated in ambient air in fume hood) with carbon electrode deliver an efficiency of 20.14%, the highest value for bladed coated carbon and perovskite solar cells, and withstand 275 h maximum power point tracking in air without encapsulation (95% efficiency retained).     

All Electrospray Printing of Carbon-Based Cost-Effective Perovskite Solar Cells

With the power conversion efficiencies of perovskite solar cells (PSCs) exceeding 25%, the PSCs are a step closer to initial industrialization. Prior to transferring from laboratory fabrication to industrial manufacturing, issues such as scalability, material cost, and production line compatibility that significantly impact the manufacturing remain to be addressed. Here, breakthroughs on all these fronts are reported. Carbon-based PSCs with architecture fluorine doped tin oxide (FTO)/electron transport layer/perovskite/carbon, that eliminate the need for the hole transport layer and noble metal electrode, provide ultralow-cost configuration. This PSC architecture is manufactured using a scalable and industrially compatible electrospray (ES) technique, which enables continuous printing of all the cell layers. The ES deposited electron transport layer and perovskite layer exhibit properties comparable to that of the laboratory-scale spin coating method. The ES deposited carbon electrode layer exhibits superior conductivity and interfacial microstructure in comparison to films synthesized using the conventional doctor blading technique. As a result, the fully ES printed carbon-based PSCs show a record 14.41% power conversion efficiency, rivaling the state-of-the-art hole transporter-free PSCs. These results will immediately have an impact on the scalable production of PSCs.     

Undoped Hole Transport Layer Toward Efficient and Stable Inorganic Perovskite Solar Cells

Numerous strategies have been practiced to improve the power conversion efficiency of CsPbI₂Br-based perovskite solar cells (PSCs), which definitely makes efficiency gradually approach the theoretical efficiency limit. However, sufficient device stability is still in urgent demand for commercialization, pushing to overcome some instability sources induced by hygroscopicity of spiro-OMeTAD and residual strain of perovskite layer. To address these issues, p-type semiconductor of PCPDTBT is used to replace spiro-OMeTAD, enabling dual functions of hole transport and strain regulation. On the one hand, undoped PCPDTBT performs excellent hole extraction and transport, while avoiding the perovskite degradation caused by the hygroscopicity of common additives. On the other hand, PCPDTBT assisted by a thermally spin-coating method compensates for the thermally-induced residual strain in perovskite layer owing to its high thermal expansion coefficient. Consequently, CsPbI₂Br-based PSCs with PCPDTBT layer achieve improved efficiency of 16.5% as well as enhanced stability. This study provides a simple and facile strategy to achieve efficient and stable CsPbI₂Br-based PSCs.     

Perovskite Solar Cells Consisting of PTAA Modified with Monomolecular Layer and Application to All-Perovskite Tandem Solar Cells with Efficiency over 25%

This study is on the enhancement of the efficiency of wide bandgap (FA_0.8Cs_0.2PbI_1.8Br_1.2) perovskite solar cells (PSCs) used as the top layer of the perovskite/perovskite tandem solar cell. Poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine] (PTAA) and the monomolecular layer called SAM layer are effective hole collection layers for APbI₃ PSCs. However, these hole transport layers (HTL) do not give high efficiencies for the wide bandgap FA_0.8Cs_0.2PbI_1.8Br_1.2 PSCs. It is found that the surface-modified PTAA by monomolecular layer (MNL) improves the efficiency of PSCs. The improved efficiency is explained by the improved FA_0.8Cs_0.2PbI_1.8Br_1.2 film quality, decreased film distortion (low lattice disordering) and low density of the charge recombination site, and improves carrier collection by the surface modified PTAA layer. In addition, the relationship between the length of the alkyl group linking the anchor group and the carbazole group is also discussed. Finally, the wide bandgap lead PSCs (E_g = 1.77 eV) fabricated on the PTAA/monomolecular bilayer give a higher power conversion efficiency of 16.57%. Meanwhile, all-perovskite tandem solar cells with over 25% efficiency are reported by using the PTAA/monomolecular substrate.     

Spidermen Strategy for Stable 24% Efficiency Perovskite Solar Cells

The interface energetics-modification plays an important role in improving the power conversion efficiency (PCE) among the perovskite solar cells (PSCs). Considering the low carrier mobility caused by defects in PSCs, a double-layer modification engineering strategy is adopted to introduce the “spiderman” NOBF₄ (nitrosonium tetrafluoroborate) between tin dioxide (SnO₂ and perovskite layers. NO⁺, as the interfacial bonding layer, can passivate the oxygen vacancy in SnO₂, while BF₄⁻ can optimize the defects in the bulk of perovskite. This conclusion is confirmed by theoretical calculation and transmission electron microscopy (TEM). The synergistic effect of NO⁺ and BF₄⁻ distinctly heightens the carrier extraction efficiency, and the PCE of PSCs is 24.04% with a fill factor (FF) of 82.98% and long-term stability. This study underlines the effectiveness of multifunctional additives in improving interface contact and enhancing PCE of PSCs.     

Pre-Buried ETL with Bottom-Up Strategy Toward Flexible Perovskite Solar Cells with Efficiency Over 23%

With rapid development of photovoltaic technology, flexible perovskite solar cells (f-PSCs) have attracted much attention for their light weight, high flexibility and portability. However, the power conversion efficiency (PCE) achieved so far is not yet comparable to that of rigid devices. This is mainly due to the great challenge of depositing homogeneous and high-quality perovskite films on flexible substrate. In this study, the pre-buried 3-aminopropionic acid hydroiodide (3AAH) additives into the electron transport layer (ETL) and modified the ETL/perovskite (PVK) interface by a bottom-up strategy. 3AAH treatment induced a templated perovskite grain growth and improved the quality of the ETL. By this, the residual stresses generated in PVK during the annealing-cooling process are released and converted into micro-compressive stresses. As a result, the defect density of f-PSCs with pre-buried 3AAH is reduced and the photovoltaic performance is greatly improved, reaching an exceptional PCE of 23.36%. This strategy provides a new idea to bridge the gap between flexible and rigid devices.     

δ‐CsPbI3 Intermediate Phase Growth Assisted Sequential Deposition Boosts Stable and High‐Efficiency Triple Cation Perovskite Solar Cells

Cs/FA/MA triple cation perovskite films have been well developed in the antisolvent dripping method, attributable to its outstanding photovoltaic and stability performances. However, a facile and effective strategy is still lacking for fabricating high‐quality large‐grain triple cation perovskite films via sequential deposition method a, which is one of the key technologies for high efficiency perovskite solar cells. To address this issue, a δ‐CsPbI₃ intermediate phase growth (CsPbI₃‐IPG) assisted sequential deposition method is demonstrated for the first time. The approach not only achieves incorporation of controllable cesium into (FAPbI₃)_1–x(MAPbBr₃)_x perovskite, but also enlarges the perovskite grains, manipulates the crystallization, modulates the bandgap, and improves the stability of final perovskite films. The photovoltaic performances of the devices based on these Cs/FA/MA perovskite films with various amounts of the δ‐CsPbI₃ intermediate phase are investigated systematically. Benefiting from moderate cesium incorporation and intermediate phase‐assisted grain growth, the optimized Cs/FA/MA perovskite solar cells exhibit a significantly improved power conversion efficiency and operational stability of unencapsulated devices. This facile strategy provides new insights into the compositional engineering of triple or quadruple cation perovskite materials with enlarged grains and superior stability via a sequential deposition method.