共查询到19条相似文献,搜索用时 62 毫秒
1.
针对适用于锂电池保护电路特点要求的共漏极功率MOSFET的封装结构进行了研发和展望.从传统的TSSOP-8发展到替代改进型SOT-26,一直到芯片级尺寸的微型封装外形,其封装效率越来越高,接近100%.同时,在微互连和封装结构的改进方面,逐渐向短引线或焊球无引线、平坦式引脚、超薄型封装和漏极焊盘散热片暴露的方向发展,增... 相似文献
2.
通常,在功率MOSFET的数据表中的第一页,列出了连续漏极电流ID,脉冲漏极电流IDM,雪崩电流IAV的额定值,然后对于许多电子工程师来说,他们对于这些电流值的定义以及在实际的设计过程中,它们如何影响系统以及如何选取这些电流值,常常感到困惑不解,本文将系统的阐述这些问题,并说明了在实际的应用过程中如何考虑这些因素,最后给出了选取它们的原则。 相似文献
3.
4.
5.
6.
Vishay推出采用PowerPAIR 6 mm×3.7 mm封装和TrenchFET GenⅢ技术的非对称双通道TrenchFET功率MOSFET——SiZ710DT,新器件比其前一代器件的导通电阻减小43%,同时具有更高的最大电流并提高效率。SiZ710DT在一个小尺寸封装中整合了低边和高边MOSFET,导通电阻低。SiZ710DT的低边Channel 2 MOSFET利用了非对称结构在优化空间上的 相似文献
7.
8.
9.
10.
11.
《Electron Device Letters, IEEE》1987,8(11):515-517
Significant drain leakage current can be detected at drain voltages much lower than the breakdown voltage. This subbreakdown leakage can dominate the drain leakage current at zero VG in thin-oxide MOSFET's. The mechanism is shown to be band-to-band tunneling in Si in the drain/gate overlap region. In order to limit the leakage current to 0.1 pA/µm, the oxide field in the gate-to-drain overlap region must be limited to 2.2 MV/cm. This may set another constraint for oxide thickness or power supply voltage. 相似文献
12.
We have investigated the radiation effect on MOSFET performances due to the incidence of a few ions in the gate area. We present new experimental evidence that a single ion may lead to the MOSFET drain current collapse, due to the formation of a localized oxide damaged region over a large portion of the channel width, well before the breakdown onset. We call these phenomena single event drain current collapse (SEDC2). This effect is evident in devices with small channel width (W), i.e., comparable to the size of damaged region, and fades as W increases over the size of the ion damaged region. 相似文献
13.
Cellere G. Paccagnella A. Mazzocchi A. Valentini M.G. 《Electron Devices, IEEE Transactions on》2005,52(2):211-217
Breakdown of gate dielectric is one of the most dangerous threats for reliability of MOSFET devices in operating conditions. Not only the gate leakage resulting from breakdown is a problem for power consumption issues, but the "on" drain current can be strongly affected. In this paper, we show that in recent technologies, featuring ultrathin gate dielectrics, the corruption of drain current due to breakdown can be modeled as the effect of a portion of channel being damaged by the opening of the breakdown spot. Devices featuring 2.2- and 3.5-nm-thick gate oxide and various channel widths are stressed by using a specialized setup, and the degradation of transistor parameters is statistically studied. The analysis shows that the radius of the damaged region responsible for drain current degradation can be estimated between 1.4 and 1.8 /spl mu/m. 相似文献
14.
15.
The widespread use of MOS technology in analog circuit design demands a precise and efficient circuit simulation model of the MOS transistor valid in all regions of inversion. Currently available circuit simulation models fail in the intermediate range of gate voltages, known as the moderate inversion region. Expressions characterizing the large-signal behavior of the long-channel MOS transistor in the moderate inversion region are derived. The correct dependencies on all the physical and process parameters are preserved by a careful approximation to the physical equations, based on the charge sheet assumption. Another goal is to develop expressions that treat the moderate inversion as a small, voltage-dependent correction to currently existing simplified models. This approach should allow a simple modification of the existing circuit simulation models to improve the accuracy in moderate inversion. The model was compared with a numerical charge sheet model and with experimental measurements of a long-channel, ion-implanted NMOS transistor. The expressions could serve as a basis for a comprehensive MOSFET circuit simulation model 相似文献
16.
17.
The letter is concerned with a full bridge, current-fed MOSFET inverter feeding a parallel resonant induction heating load. A means of suppressing ringing between parasitic lead inductance and drain source capacitance is described. 相似文献
18.
In the present paper, a comprehensive drain current model incorporating various effects such as drain-induced barrier lowering (DIBL), channel length modulation and impact ionization has been developed for graded channel cylindrical/surrounding gate MOSFET (GC CGT/SGT) and the expressions for transconductance and drain conductance have been obtained. It is shown that GC design leads to drain current enhancement, reduced output conductance and improved breakdown voltage. The effectiveness of GC design was examined by comparing uniformly doped (UD) devices with GC devices of various L1/L2 ratios and doping concentrations and it was found that GC devices offer superior characteristics as compared to the UD devices. The results so obtained have been compared with those obtained from 3D device simulator ATLAS and are found to be in good agreement. 相似文献
19.
In this paper, a drain current model incorporating drain-induced barrier lowering (DIBL) has been developed for Dual Material gate Cylindrical/Surrounding gate MOSFET (DMG CGT/SGT MOSFET) and the expressions for transconductance and drain conductance have been obtained. It is shown that DMG design leads to drain current enhancement and reduced output conductance. The effectiveness of DMG design was scrutinized by comparing with single metal gate (SMG) CGT/SGT MOSFET. Moreover, the effect of technology parameters variations workfunction difference has also been presented in terms of gate bias, drain bias, transconductance and drain conductance. Results reveal that the DMG SGT/CGT devices offer superior characteristics as compared to single material gate CGT/SGT devices. A good agreement between modeled and simulated results has also been obtained thus providing the validity of proposed model. 相似文献