金刚石在GaN功率放大器热设计中的应用

随着GaN功率放大器向小型化、大功率发展,其热耗不断增加,散热问题已成为制约功率器件性能提升的重要因素。金刚石热导率高达2 000 W/(m·K),是一种极具竞争力的新型散热材料,可用作大功率器件的封装载片。采用不同载片材料对一款热耗为53 W的GaN功率放大器进行封装。分别采用有限元仿真及红外热成像仪对放大器的芯片结温进行仿真和测试,结果显示,采用金刚石载片封装的放大器的结温比采用钼铜(MoCu30)载片封装的放大器的结温降低了30.01℃,约18.69%。同其他常用载片材料进行进一步对比得出,在相同工作条件下,采用金刚石载片封装的放大器结温最低,并且随着热耗增加,金刚石的散热能力更为突出。在芯片安全工作温度175℃以下,金刚石能满足GaN功率放大器100 W热耗的散热需求。     

铜钼叠层基板的热学特性仿真研究

采用有限元方法,仿真研究了不同层数和材料厚度比的铜钼叠层基板对芯片散热特性的影响。结果表明,2层和3层的铜钼叠层材料均可以有效综合Cu高热导率和Mo低膨胀系数的优点。在相同铜钼总厚度比的情况下,相比于2层材料,3层材料可以实现更好的散热特性。对于1 mm的基板厚度,铜钼铜厚度比为0.2∶0.6∶0.2时可以同时实现较低的温度和热应力。通过调整基板结构参数,可以显著改变芯片的最高温度和最大热应力,满足不同封装领域的需求。     

电子封装中高散热铜/金刚石热沉材料的电镀技术研究

随着半导体封装载板集成度的提升,其持续增加的功率密度导致设备的散热问题日益严重。金刚石-铜复合材料因其具有高导热、低膨胀等优异性能,成为满足功率半导体、超算芯片等电子封装器件散热需求的重要候选材料。文章采用复合电镀法成功制备了铜/金刚石复合材料,考察了不同复合电镀的工艺方法、金刚石含量、粒径大小对复合材料微观结构、界面结合以及导热性能的影响。并通过优化复合电镀方式,金刚石添加量等工艺参数,制备了无空洞、界面结合紧密的高导热复合材料;仅添加8.8 vol%的金刚石,使复合材料的导热率从393 W/(m.K)增加到462 W/(m.K)。本技术可以应用于半导体封装领域,并进一步增强芯片的散热性能。     

电子封装材料用金刚石/铜复合材料的研究进展

电子技术的快速发展对封装材料的性能提出了更严格的要求.针对封装材料的发展趋势,金刚石/铜复合材料作为新一代的电子封装材料受到了广泛的重视.概述了金刚石/铜复合材料作为封装材料的优良性能及其制备工艺进展,并对其发展方向进行了展望.     

铜-硼/金刚石复合材料翅片热沉散热研究

采用气压浸渗法制备了热导率为850 W ? m-1 ? K-1的铜-硼/金刚石复合材料翅片热沉,测试了其在自然冷却、强迫风冷和强迫水冷三种冷却模式下的散热效果.结果表明,热源功率越高,铜-硼/金刚石复合材料的散热效果越显著.在强迫水冷模式下,当加热片的输入功率为80 W时,使用铜-硼/金刚石复合材料翅片热沉时加热片的最高温度比使用铜翅片热沉时低14℃,比使用铝翅片热沉时低23℃.Icepak热模拟发现,在强迫水冷模式下输入功率为80 W时,与铜和铝翅片热沉相比,铜-硼/金刚石复合材料翅片热沉的整体温度更低且温度分布更均匀.研究结果证实,铜-硼/金刚石复合材料是一种高效的散热材料,在大功率电子器件散热中具有广阔的应用前景.     

超高导热金刚石铜复合材料在GaN器件中的应用

金刚石铜具有高导热率和低膨胀系数,可用于大功率芯片的散热热沉.未做处理的金刚石表面非常光滑,不易附着其他金属,由于金刚石性质非常稳定,不容易被强酸和强碱进行表面处理.采用JG-01金刚石铜粗化处理液对金刚石进行粗化处理,而对铜无损伤,提升了金刚石表面结合力.金刚石铜镀层对金锡(AuSn)和锡铅(PbSn)焊料的润湿性满足GJB548B-2005要求.GaN功率放大器芯片采用金刚石铜热沉比铜钼铜热沉结温可以降低12℃.金刚石铜载板镀层润湿性良好,焊接后芯片底部的空洞率不大于3％,热沉焊接后空洞率不大于5％,满足高功率芯片散热要求.按照产品环境适应要求,对GaN功率放大器做了高低温冲击和机械振动两种环境筛选实验,最终满足可靠性考核要求.     

基于石墨嵌入式结构的SiC功率模块热仿真与优化

SiC器件相比于Si器件,具有更高的功率密度,表现出高的器件结温和热阻。为了提高SiC功率模块的散热能力,提出了一种基于石墨嵌入式叠层DBC的SiC功率模块封装结构,并建立封装体模型。通过ANSYS有限元软件,对石墨层厚度、铜层厚度和导热铜柱直径进行分析,研究各因素对散热性能的影响,并对封装结构进行优化以获得更好的热性能。仿真结果表明,石墨嵌入式封装结构结温为61.675℃,与传统单层DBC封装相比,结温降低19.32%,热阻降低27.05%。各影响因素中石墨层厚度对封装结温和热阻影响最大,其次是铜柱直径和铜层厚度。进一步优化后,结温降低了2.1%,热阻降低了3.4%。此封装结构实现了优异的散热性能,为高导热石墨在功率模块热管理中的应用提供参考。     

基于金刚石散热结构的超高功率LED光源

金刚石是自然界导热率最高的材料,具备极佳的耐热和导热性能。基于金刚石导热的散热结构,大大提高了超高功率LED的散热能力。介绍了三种金刚石散热结构:氮化镓与金刚石直接结合实现GaN-ondiamond光与热集成的结构;在传统的LED光源中增加金刚石薄膜作为高导热层的散热结构;以金刚石复合材料做成的LED热沉结构。理论上,三种结构中第一种结构的散热效果最好,与目前最先进的碳化硅衬底LED相比,其结温降低了40%~45%。     

Ni-Cr合金钎料激光钎焊金刚石表面金属化

为了研究激光钎焊金刚石磨粒表面金属化生成物类别与形成机制, 采用第一性原理的密度泛函理论对常见碳化物进行了计算, 并采用Ni-Cr合金钎料, 借助光纤激光热源对金刚石磨粒进行了激光钎焊试验, 获得了Cr₃C₂和Cr₇C₃两种碳化物的结构和力学性能参量以及金刚石磨粒表面微结构和碳化物种类。结果表明, Cr₃C₂和Cr₇C₃两者都具有金属性, 且后者韧性更强; 激光钎焊得到的金刚石磨粒与Ni-Cr合金钎料界面冶金反应层厚度约为4μm, 金刚石磨粒表面碳化物主要为Cr₃C₂; 超声辅助激光钎焊得到的金刚石磨粒表面碳化物为Cr₃C₂和Cr₇C₃, 超声波高频振动可以促进界面反应, 进而生成含碳量低的Cr₇C₃。此研究结果对激光钎焊金刚石技术的发展具有指导意义。     

高功率CO2激光钎焊金刚石颗粒

采用高功率横流CO2激光扫描钎料合金与金刚石颗粒。研究了激光工艺参数对钎焊层结合性能及金刚石热损伤的影响,分析了钎焊层与金刚石结合机制及金刚石颗粒在激光作用下的热损伤机制。研究结果表明,激光功率和扫描速度是影响金刚石热损伤及表面浸润的主要因素。在氩气保护下,粉末厚度为0.5 mm,激光光斑直径3 mm,功率为800 W,扫描速度为8.39 mm/s时,可获得金刚石颗粒、钎料合金、金属基体三者具有最佳结合性能的钎焊层。合金粉末对金刚石颗粒浸润良好,并发生冶金化学反应,生成TiC和SiC。当激光输入能量太高时,金刚石颗粒开始与外界的氧发生氧化反应,在自由能方程中的气体分压下,金刚石一直氧化,直到与氧化物处于平衡状态。这一过程表现为金刚石颗粒石墨化,逐步氧化烧损变成气体。     

Thermodynamic prediction of interface phases at Cu/solder joints

A thermodynamic method to predict the intermetallic compound which forms first at the substrate/solder interface during the soldering process has been suggested through calculations of metastable phase equilibria between the substrate and the liquid solder and by comparison of the driving forces of formation of individual intermetallic compound phases. It has been applied to the interfacial reaction between Cu substrate and Sn-Ag, Sn-Zn eutectic solders. The prediction from thermodynamic calculations was in good agreement with observed experimental results. The solid-state growth behavior of compound phases formed at the interface of Cu/Sn-Zn and Cu/Sn-Ag eutectic solder joints was explained and a schematic diffusion path suggested through calculated ternary phase diagrams.     

Electromigration Reliability and Morphologies of Cu Pillar Flip-Chip Solder Joints with Cu Substrate Pad Metallization

The Cu pillar is a thick underbump metallurgy (UBM) structure developed to alleviate current crowding in a flip-chip solder joint under operating conditions. We present in this work an examination of the electromigration reliability and morphologies of Cu pillar flip-chip solder joints formed by joining Ti/Cu/Ni UBM with largely elongated ∼62 μm Cu onto Cu substrate pad metallization using the Sn-3Ag-0.5Cu solder alloy. Three test conditions that controlled average current densities in solder joints and ambient temperatures were considered: 10 kA/cm² at 150°C, 10 kA/cm² at 160°C, and 15 kA/cm² at 125°C. Electromigration reliability of this particular solder joint turns out to be greatly enhanced compared to a conventional solder joint with a thin-film-stack UBM. Cross-sectional examinations of solder joints upon failure indicate that cracks formed in (Cu,Ni)₆Sn₅ or Cu₆Sn₅ intermetallic compounds (IMCs) near the cathode side of the solder joint. Moreover, the ~52-μm-thick Sn-Ag-Cu solder after long-term current stressing has turned into a combination of ~80% Cu-Ni-Sn IMC and ~20% Sn-rich phases, which appeared in the form of large aggregates that in general were distributed on the cathode side of the solder joint.     

Controlling intermetallic compound growth in SnAgCu/Ni-P solder joints by nanosized Cu6Sn5 addition

Nanosized Cu₆Sn₅ dispersoids were incorporated into Sn and Ag powders and milled together to form Sn-3Ag-0.5Cu composite solders by a mechanical alloying process. The aim of this study was to investigate the interfacial reaction between SnAgCu composite solder and electroless Ni-P/Cu UBM after heating for 15 min. at 240°C. The growth of the IMCs formed at the composite solder/EN interface was retarded as compared to the commercial Sn3Ag0.5Cu solder joints. With the aid of the elemental distribution by x-ray color mapping in electron probe microanalysis (EPMA), it was revealed that the SnAgCu composite solder exhibited a refined structure. It is proposed that the Cu₆Sn₅ additives were pinned on the grain boundary of Sn after heat treatment, which thus retarded the movement of Cu toward the solder/EN interface to form interfacial compounds. In addition, wetting is an essential prerequisite for soldering to ensure good bonding between solder and substrate. It was demonstrated that the contact angles of composite solder paste was <25°, and good wettability was thus assured.     

Comparison of electroplated eutectic Bi/Sn and Pb/Sn solder bumpson various UBM systems

The effect of a reflow process and under bump metallurgy (UBM) systems on the growth of intermetallic compounds (IMC) of the 57Bi/43Sn and 37Pb/63Sn solder bump/UBM interfaces was investigated. The selected UBM systems were sputtered Al/Ti/Cu, sputtered Al/NiV/Cu, Al/electroless Ni/immersion Au, and Al/Ti/electroless Cu. An alloy electroplating method was used for the solder bumping process. The microstructure and composition of intermetallic compound (IMC) phases and their morphologies were examined using scanning electron microscopy and X-ray diffraction. The Cu₆Sn₅ η'-phase IMC appeared on all Cu containing UBM cases with Pb/Sn and Bi/Sn solders and the Cu ₃Sn ϵ-phase was detected only with Pb/Sn solder bumps. The Ni₃Sn₄ IMC was found to be the main IMC phase between Ni and solder. The Ni₃Sn secondary IMC was also detected on the electroless Ni UBM with PbSn solder after ten times reflow. Through the bump shear test, Al/NiV/Cu, Al/elNi/Au, and Al/Ti/elCu UBMs showed good stability with Bi/Sn and Pb/Sn solder in terms of metallurgical aspects     

Interfacial reactions and compound formation of Sn-Ag-Cu solders by mechanical alloying on electroless Ni-P/Cu under bump metallization

Electroless Ni-P under bump metallization (UBM) has been widely used in electronic interconnections due to the good diffusion barrier between Cu and solder. In this study, the mechanical alloying (MA) process was applied to produce the SnAgCu lead-free solder pastes. Solder joints after annealing at 240°C for 15 min were employed to investigate the evolution of interfacial reaction between electroless Ni-P/Cu UBM and SnAgCu solder with various Cu concentrations ranging from 0.2 to 1.0 wt.%. After detailed quantitative analysis with an electron probe microanalyzer, the effect of Cu content on the formation of intermetallic compounds (IMCs) at SnAgCu solder/electroless Ni-P interface was evaluated. When the Cu concentration in the solder was 0.2 wt.%, only one (Ni, Cu)₃Sn₄ layer was observed at the solder/electroless Ni-P interface. As the Cu content increased to 0.5 wt.%, (Cu, Ni)₆Sn₅ formed along with (Ni, Cu)₃Sn₄. However, only one (Cu, Ni)₆Sn₅ layer was revealed, if the Cu content was up to 1 wt.%. With the aid of microstructure evolution, quantitative analysis, and elemental distribution by x-ray color mapping, the presence of the Ni-Sn-P phase and P-rich layer was evidenced.     

Microstructure evolution of gold-tin eutectic solder on Cu and Ni substrates

The microstructures of the eutectic Au20Sn (wt.%) solder that developed on the Cu and Ni substrates were studied. The Sn/Au/Ni sandwich structure (2.5/3.75/2 μm) and the Sn/Au/Ni sandwich structure (1.83/2.74/5.8 μm) were deposited on Si wafers first. The overall composition of the Au and the Sn layers in these sandwich structures corresponded to the Au20Sn binary eutectic. The microstructures of the Au20Sn solder on the Cu and Ni substrates could be controlled by using different bonding conditions. When the bonding condition was 290°C for 2 min, the microstructure of Au20Sn/Cu and Au20Sn/Ni was a two-phase (Au₅Sn and AuSn) eutectic microstructure. When the bonding condition was 240°C for 2 min, the AuSn/Au₅Sn/Cu and AuSn/Au₅Sn/Ni diffusion couples were subjected to aging at 240°C. The thermal stability of Au20Sn/Ni was better than that of Au20Sn/Cu. Moreover, less Ni was consumed compared to that of Cu. This indicates that Ni is a more effective diffusion barrier material for the Au20Sn solder.     

热风整平工艺上锡不良问题的探讨

热风整平工艺能得到一个平滑而均匀的焊料涂覆层而被广泛的应用于PCB行业。然而,针对该工艺的品质保证绝非易事。热风整平工艺受助焊剂、温度等因素的影响,在品质上容易出现上锡不良、涂层不均匀等不良问题。本文利用X-Ray、SEM、EDS等分析手段对热风整平工艺中的上锡不良问题进行了分析探讨。结果发现:上锡不良PAD位存在克氏空孔,锡层中含有铜元素,其原因是基板中的Cu原子以扩散方式通过界面Cu6Sn5层进入锡面基体中所致,造成上锡不良,导致可焊性差。     

Sn-Zn系钎料研究及应用现状

随着钎料无铅化的发展,Sn-Zn钎料以其低廉的成本,与SnPb钎料相近的熔点成为无铅钎料研究的重点.但是Sn-Zn钎料存在易氧化,抗腐蚀性差,润湿性差的问题,通常在SnZn钎料中加入不同元素,改善其性能.主要阐述不同添加元素Bi、Al、In、Re(稀土元素)、Ag、Cu、P和多元合金对SnZn钎料自身性能和钎料与Cu结合性能的影响,概述SnZn系钎料的工业应用现状.     

Materials and processes for implementing high-temperature liquid interconnects

This paper describes the results of a study investigating liquid solder joints at elevated temperatures (up to 200/spl deg/C). The reactions of eutectic 52In/48Sn solder, which melts at 118/spl deg/C, with various metal barrier layers is presented. The main emphasis of the research was to find a combination of solder and substrate metallization which has good adhesion strength but also remains stable during temperature cycling and high-temperature storage when the solder is molten. Intermetallic growth rates and solder-substrate adhesion strength have been measured for a range of potential barrier layers including Ni, Cr, Pt, Ti, V, Nb, Ta, and W. Of these, only Nb was found to have acceptable properties for a high-temperature barrier layer to In/Sn solder. Other aspects of liquid solder interconnections that have been studied include stability of the molten solder-underfill interface under electrical bias and retention of electrical contact during vibration and phase change. Plastic ball grid array (PBGA) devices have been assembled with Nb barrier layers and liquid solder joints and their reliability during temperature cycling (-20/spl deg/C to +180/spl deg/C) has been compared to PBGA joints with Sn95.5/Ag4/Cu0.5 solder balls.     

A reliability comparison of electroplated and stencil printed flip-chip solder bumps based on UBM related intermetallic compound growth properties

The effects of under bump metallurgy (UBM) microstructures on the intermetallic compound (IMC) growth of electroplated and stencil printed eutectic Sn-Pb solder bumps were investigated. The process parameters and their effects on UBM surface morphology and UBM shear strength were studied. For the electroplating process, the plating current density was the dominant factor to control the Cu UBM microstructure. For the stencil printing process, the zincation process has the most significant effect on the Ni UBM surface roughness and Ni grain sizes. In both processes, the good adhesion of UBM to aluminum can be obtained under suitable UBM processing conditions. Samples with different UBM microstructures were prepared using the two processes. The resulting samples were thermal aged at 85/spl deg/C, 120/spl deg/C, and 150/spl deg/C. It was observed that the Cu UBM surface roughness had larger effect on the IMC growth and solder ball shear strength than the Ni UBM surface roughness. The thickness of Cu/sub 3/Sn and Cu/sub 6/Sn/sub 5/ IMC depended strongly on the UBM microstructure. However, for Ni/Au UBM, no significant dependence was observed. More likely, the thickness of Au-Ni-Sn IMC near the IMC/solder interface was controlled by the amount of gold and the gold diffusion rate in the solder. Shear tests were performed after thermal aging tests and thermal/humidity tests. Different failure modes of different sample groups were analyzed. Electroless Ni UBM has been developed because it is a mask-less, low-cost process compared to electroplated Cu UBM. This study demonstrated that the process control was much easier for Ni UBM due to its lower reactivity with Sn material. These properties made Ni UBM a promising candidate for the lead-free solder applications.