球栅阵列封装中SnPb焊点的应力应变分析

基于SnPb焊料的统一粘塑性Anand本构模型,运用ANSYS有限元软件分析了球栅阵列封装中复合SnPb焊点在热循环过程中的应力、应变的分布,观察到SnPb焊料的蠕变行为和应力松弛现象,结果证明:外侧焊点经受的应力、应变范围比内侧焊点大;焊点的最高应力区域出现在Sn60Pb40焊料的最外缘处,最高应变区域出现在Pb90Sn10焊料与UBM层接触面的最上缘处.     

热循环条件下无铅焊点可靠性的有限元分析

通过有限元数值模拟对Sn3.5Ag0.75Cu无铅焊料焊点的可靠性问题进行了分析。采用统一粘塑性Anand本构方程对焊料焊点结构进行有限元分析,研究焊点在热循环加载过程中的应力应变等力学行为。研究结果表明,在焊点内部焊点与基板结合处的应力较大,而焊点中央的应力较小;焊点在低温阶段的应力最大,在高温阶段应变最大;在升降温阶段的应力应变变化较大,而在保温阶段的应力应变变化较小。     

倒装焊SnPb焊点热循环失效和底充胶的影响

采用实验方法 ,确定了倒装焊 Sn Pb焊点的热循环寿命 .采用粘塑性和粘弹性材料模式描述了 Sn Pb焊料和底充胶的力学行为 ,用有限元方法模拟了 Sn Pb焊点在热循环条件下的应力应变过程 .基于计算的塑性应变范围和实验的热循环寿命 ,确定了倒装焊 Sn Pb焊点热循环失效 Coffin- Manson经验方程的材料参数 .研究表明 ,有底充胶倒装焊 Sn Pb焊点的塑性应变范围比无底充胶时明显减小 ,热循环寿命可提高约 2 0倍 ,充胶后的焊点高度对可靠性的影响变得不明显     

倒装焊SnPb焊点热循环失效和底充胶的影响

采用实验方法,确定了倒装焊SnPb焊点的热循环寿命．采用粘塑性和粘弹性材料模式描述了SnPb焊料和底充胶的力学行为,用有限元方法模拟了SnPb焊点在热循环条件下的应力应变过程．基于计算的塑性应变范围和实验的热循环寿命,确定了倒装焊SnPb焊点热循环失效Coffin-Manson经验方程的材料参数．研究表明,有底充胶倒装焊SnPb焊点的塑性应变范围比无底充胶时明显减小,热循环寿命可提高约20倍,充胶后的焊点高度对可靠性的影响变得不明显．     

热循环加载条件下SMT焊点应力应变过程的有限元分析

ＳＭＴ焊 热循环条件下的应力应变过程分析是ＳＭＴ焊点可靠性的重要方向。本文采用粘弹塑性材料模式描述ＳｎＰｂ钎料的力学本构响应，对非城堡型ＬＣＣＣ焊蹼结构进行三维有限元分析，考察焊点在热循环加载过程中的应力应变等力学行为。研究结果表明，焊点钎料内的高应力发生在热循环的低温阶段，升降温过程中的蠕变和非弹性应变的累积显著，蠕变应变在非弹性应变中占主导地位，应力应变滞后环在热循环的最初几个周期内就能很快稳     

板级结构参数对CSP器件焊点可靠性的影响

研究了几何因素和基板材料对无铅焊点可靠性的影响，建立了CSP封装元件的有限元模型。进行了温度循环测试，分析了焊点的应力应变情况。结果表明：基板厚度，焊点高度与焊盘直径的变化对焊点寿命有着不同的影响趋势。同时比较了FR4，Al2O3，PI材料基板与无铅焊点互连的情况，最终得出PI基板是最有利于封装器件使用的基板材料。但是由于其加工成本较高等方面的原因一般只用于高可靠性要求的军事产品领域。     

热循环过程中焊点残余应变的研究

采用激光云纹干涉法,测量了不同热循环规范下焊点内的残余应变分布及最后失效的的焊点内最大的累积残余应变(即累积塑性变形),结果表明:材料热膨胀系数的不匹配导致焊点中存在很大的剪切变形,而且焊点内的残余应变的分布是很不均匀的;对应于同一种焊料,不同的热循环规范下焊点失效时的累积塑性变形基本上相同,可以认为对于焊点来说,失效时的累积塑性变形是一个常数,这可以作为热循环过程中焊点失效的判据。     

片式元件焊点的热循环应力应变模拟技术研究

采用ANSYS软件,以0402片式元件焊点为对象,系统探讨了焊点热应变损伤的有限元仿真方法,分析了焊点在热循环过程中的应力应变响应,并基于修正的Coffin-Manson方程,预测了焊点的热疲劳寿命。结果显示:焊点应力集中区域和应变最大区域均位于焊点与PCB焊盘的交界面,基于应变失效原则,推断焊点裂纹将在此界面萌生和扩展,直至失效。指出了焊点有限元热应变损伤模拟技术的不足及未来的研究方向。     

基于扭转载荷的微尺度CSP焊点应力应变分析与优化

建立了微尺度芯片尺寸封装焊点有限元分析模型并对其进行扭转应力应变仿真分析与实验验证.分析了焊点材料、焊点直径、焊盘直径和焊点高度对焊点扭转应力应变的影响;以焊点材料、焊点直径、焊盘直径和焊点高度为设计变量,采用响应面法设计了29组不同水平组合的焊点模型并获取了相应焊点扭转应力,建立了焊点扭转应力与焊点结构参数的回归方程,结合遗传算法对焊点结构参数进行了优化.结果表明：焊点材料为SAC305时扭转应力应变最大,焊点最大扭转应力应变随焊点直径和焊盘直径增加而减小、随焊点高度增大而增大;最优焊点结构参数水平组合为：焊点材料SAC305、焊点直径0.22mm、焊盘直径0.14mm和焊点高度0.14mm;仿真验证表明最优焊点最大扭转应力下降了3.7MPa.     

CSP封装Sn-3.5Ag焊点的热疲劳寿命预测

对芯片尺寸封装(CSP)中Sn-3.5Ag无铅焊点在热循环加速载荷下的热疲劳寿命进行了预测.首先利用ANSYS软件建立CSP封装的三维有限元对称模型,运用Anand本构模型描述Sn-3.5Ag无铅焊点的粘塑性材料特性;通过有限元模拟的方法分析了封装结构在热循环载荷下的变形及焊点的应力应变行为,并结合Darveaux疲劳寿命模型预测了无铅焊点的热疲劳寿命.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.