Impact of SF6 plasma treatment on performance of AlGaN/GaN HEMT

Selective plasma treatment of an AlGaN/GaN heterostructure in the RF discharge of the electronegative SF₆ gas was studied. Shallow recess-gate etching of AlGaN (∼5 nm) was performed in CCl₄ plasma through a photoresist mask. Subsequently, recess-gate etching followed in situ by SF₆ plasma. The plasma treatment provides the following advantages in the technology of AlGaN/GaN high-electron mobility transistors (HEMT): It (1) simplifies their technology; (2) ensures sufficient selectivity; and (3) enables the technologist to set the threshold voltage of the HEMTs controllably. At the same time, the treatment can (1) provide the AlGaN/GaN heterostructure with surface passivation; (2) modify the 2DEG in any area of a HEMT channel; and (3) make it possible to convert a HEMT operation from depletion mode to enhancement mode. The treatment also improved significantly the DC and RF parameters of HEMTs studied.     

Multilayer AIN/AlGaN/GaN/AlGaN heterostructures with quantum wells for high-power field-effect transistors grown by ammonia MBE

High-power field-effect transistors (FETs) are among the main applications of heterostructures based on group III metal nitrides, which in most cases implement the classical GaN/AlGaN structure with a single junction. An alternative approach based on the use of double heterostructures with imporved two-dimensional electron gas (2DEG) confinement offers a number of advantages, but such structures are usually characterized by a lower carrier mobility and density (in GaN layers of reduced thickness) as compared to the values in the single-junction structures. Optimization of the heterostructure design and ammonia MBE growth conditions allowed us to obtain multilayer AlN/AlGaN/GaN/AlGaN heterostructures with quantum wells, which are characterized by a 2DEG carrier mobility of 1100–1300 cm²/(V s) and a sheet electron density of (1.1–1.3) × 10¹³ cm^-2. Experimental FETs based on the obtained multilayer heterostructures in a static regime exhibit working current densities up to 0.6 A/mm at a transconductance of up to 150 mS/mm and a breakdown voltage above 100 V.     

Simulations of Si and SiO2 etching in SF6 + O2 plasma

Chemical etching of Si and SiO₂ in SF₆ + O₂ plasma is considered. The concentrations of plasma components are calculated using values extrapolated from experimental data. Resulting calculations of plasma components are used for the calculation of Si and SiO₂ etching rates. It is found that the reaction constants for reactions of F atoms with Si atoms and SiO₂ molecules are equal to (3.5 ± 0.1) × 10⁻² and (3.0 ± 0.1) × 10⁻⁴, respectively. The influence of O₂ addition to SF₆ plasma on the etching rate of Si is quantified.     

Multilayer AlN/AlGaN/GaN/AlGaN heterostructures for high-power field-effect transistors grown by ammonia MBE

The results of the optimization of the ammonia MBE technology of AlN/AlGaN/GaN/AlGaN heterostructures for high-power microwave field-effect transistors (FETs) are presented. The creation of technological systems of the EPN type for the deposition of group III nitrides by ammonia MBE, in combination with the development of optimum growth and postgrowth processes, make it possible to obtain AlN/AlGaN/GaN/AlGaN based heterostructures for high-power microwave FETs with the output static characteristics on the world best level. One of the main fields of application of the semiconductor heterostructures based on group III nitrides is the technology of high electron mobility transistors (HEMTs). Most investigations in this field have been devoted to the classical GaN/AlGaN structures with a single heterojunction. An alternative approach based on the use of double heterostructures with improved two-dimensional electron gas (2DEG) confinement offers a number of advantages, but such structures are usually characterized by a lower carrier mobility as compared to that in the single-junction structures. We succeeded in optimizing the double heterostructure parameters and growth conditions so as to obtain conducting channels with a 2DEG carrier mobility of 1450, 1350, and 1000 cm²/(V s) and a sheet electron density of 1.3 × 10¹³, 1.6 × 10¹³, and 2.0 × 10¹³ cm^?2, respectively. Experimental HEMTs with 1-μm-long gates based on the obtained multilayer heterostructure with a doped upper barrier layer exhibit stable current-voltage characteristics with maximum saturation current densities of about 1 A/mm and a transconductance of up to 180 mS/mm.     

High temperature assessment of nitride-based devices

The high temperature characterization of GaN-based devices, including high electron mobility transistors (HEMTs), p-i-n photodiodes and surface acoustic wave (SAW) filters is reported. Transmission line method (TLM) measurements reveal the reversible behaviour of both the ohmic contact resistance and the two-dimensional electron gas (2DEG) mobility. AlGaN/GaN HEMTs on sapphire and SiC substrates present a reduction of the drain current and the transconductance as temperature increases. The responsivity of InGaN/GaN photodiodes is enhanced and shifted to larger wavelengths with temperature, recovering its original value after the thermal cycle. The temperature coefficient of frequency of SAW filters on AlN epilayers on different substrates has been measured. The influence of temperature on the different surface acoustic modes is compared.     

Anisotropic etching of silicon in SF6 plasma

The reactive ion etching of silicon in SF₆ plasma is considered. During the experiment, silicon substrates are etched in SF₆ plasma at different pressures and energies of incident ions. High etching anisotropy is achieved decreasing the pressure in the reactor and increasing the energy of the bombarding ions. The obtained experimental measurements are compared with theoretical calculations. It is determined that the temperature of the sidewalls decreases with the decrease of concentration of F atoms due to suppressed plasmochemical etching of silicon. The etching anisotropy increases with the decrease of concentration of F atoms due to decreased desorption of SiF₄ molecules.     

Dry etching of AlN films using the plasma generated by fluoride

The plasma produced by the mixture of fluoride and argon (SF₆/Ar) was applied for the dry etching of AlN films. Very high etching rate up to 140 nm/min have been observed. The effects of the bias voltage and the plasma component on the etching results were investigated. It shows that AlN can be effectively etched by the plasma with the moderate SF₆ concentration and the etching rate varies linearly with the bias voltage. The FTIR spectra confirm that AlF₃ is formed due to the chemical reaction of Al and F atoms. The mechanism of AlN etching in F-based plasma is probably a combination between physical sputtering and chemical etching and can be briefly outlined: (i) F⁻ ions reacts with Al atoms to form low volatile product AlF₃ and passivate the surface, and (ii) at the same time the Ar⁺ ions sputter the reaction product from the surface and keep it fluoride free to initiate further reaction. AlF₃ formed on the patterned sidewall play a passivation role during the etching process. The etching process is highly anisotropic with quite smooth surface and vertical sidewalls.     

Operation mechanism of double-mode surface acoustic wave filters with pitch-modulated IDTs and reflectors

One of the authors (KH) previously proposed pitch-modulated interdigital transducers (IDTs) and reflectors for developing low-loss and wideband longitudinally coupled double-mode SAW (DMS) filters. This paper discusses how a wide and flat passband is realized by applying the pitch-modulated IDTs and reflectors to DMS filters. It is shown that the pitch-modulated structure enables one to adjust the location of multiple resonance frequencies simultaneously by varying an effective reflective position with frequency. That is, the IDTs are pitch-modulated so that the outer portion has slightly larger pitch than the inside, and the pitch of the outermost reflectors is made largest. Accordingly, higher-order SAW resonances occur between the two pitch-modulated IDTs. The outer portion of each IDT acts as a reflector, and the inner portion is mainly responsible for SAW excitation. Lower-order SAW resonances occur between the two reflectors.     

Effect of SF6 incorporation in the cyclic process on the low temperature deposition of carbon nanofilaments

To enhance the carbon nanofilaments (CNFs) formation density, SF₆ was incorporated in the source gases (C₂H₂/H₂) during the initial deposition stage. The source gases and SF₆ were manipulated as the cyclic on/off modulation of C₂H₂/H₂/SF₆ flow in a thermal chemical vapor deposition system. The characteristics of the CNFs formation on the substrate were investigated according to the different cyclic modulation processes and the substrate temperatures. By the incorporation of SF₆ in the cyclic process CNFs could be formed at the substrate temperature as low as 350 °C. Among the different processes, mutual alternating cyclic modulation process of C₂H₂ and SF₆ could most highly enhance the CNFs formation density. The cause for the enhancement in the characteristics of as-grown CNFs by the incorporation of SF₆ was discussed in association with the slightly enhanced etching ability by the incorporation of SF₆.     

Effect of a new low pressure SF6 plasma sterilization system on polymeric devices

A low pressure RF remote plasma, with low temperature, was used as new sterilization system. This system was designed especially for thermo-sensitive materials. SF₆ plasma has been found to totally inactivate all investigated microorganisms within three minutes. The effect of the SF₆ plasma treatment (soft conditions) and following the aging on three polymers films has been investigated.The evolution of surface after plasma treatment was studied by several techniques. FTIR was used to follow the degradations and changes in the bulk polymers. The SEM images showed the etching and grafting on the polymers surfaces. The decreasing of the wettability in the treated surfaces indicates an increasing in surface hydrophobicity. The decreasing of C and O atoms on the surface and the developing of non-polar sites (F functionalities) were observed by XPS analysis. The surface modifications were found to be permanent.     

Deposition and characterization of smooth ultra-nanocrystalline diamond film in CH4/H2/Ar by microwave plasma chemical vapor deposition

The smooth ultra-nanocrystalline diamond (UNCD) films were prepared by microwave plasma chemical vapor deposition (MWCVD) using argon-rich CH₄/H₂/Ar plasmas with varying argon concentration from 96% to 98% and negative bias voltage from 0 to −150 V. The influences of argon concentration and negative bias voltage on the microstructure, morphology and phase composition of the deposited UNCD films are investigated by using scanning electron microscopy (SEM), X-ray diffraction (XRD), atom force microscopy (AFM), and visible and UV Raman spectroscopy. It was found that the introduction of argon in the plasma caused the grain size and surface roughness decrease. The RMS surface roughness of 9.6 nm (10 micron square area) and grain size of about 5.7 nm of smooth UNCD films were achieved on Si(100) substrate. Detailed experimental results and mechanisms for UNCD film deposition in argon-based plasma are discussed. The deposited highly smooth UNCD film is also expected to be applicable in medical implants, surface acoustic wave (SAW) devices and micro-electromechanical systems (MEMS).     

Black Silicon formation using dry etching for solar cells applications

A study on the formation of Black Silicon on crystalline silicon surface using SF₆/O₂ and SF₆/O₂/CH₄ based plasmas in a reactive ion etching (RIE) system is presented. The effect of the RF power, chamber pressure, process time, gas flow rates, and gas mixtures on the texture of silicon surface has been analyzed. Completely Black Silicon surfaces containing pyramid like structures have been obtained, using an optimized mask-free plasma process. Moreover, the Black Silicon surfaces have demonstrated average values of 1% and 4% for specular and diffuse reflectance respectively, feature that is suitable for the fabrication of low cost solar cells.     

Analysis of general multi-channel planar waveguides

Using the planar waveguide concept in surface acoustic wave (SAW) technology is often advantageous when the modeling of transversely distributed phenomena is indispensable for an accurate design of SAW devices. This is especially true when complex multi-track structures such as transversely coupled resonator filters (TCRFs) are under consideration where, e.g., transverse velocity and stiffness profiles have to be incorporated in the device simulation. The interdigital transducers (IDTs) and the reflector gratings composing those devices behave as planar waveguides, supporting, in principle, all kinds of modes such as bound, semi-bound, and radiation modes. Therefore, to model these SAW propagation effects, we subdivide the SAW structures in transverse direction into several parallel waveguiding channels (N regions), and take, as the wave-describing quantity, a two-dimensional scalar potential function. By doing so, we obtain a complete set of orthonormal modes into which an arbitrary transverse excitation function can be expanded to study its propagation. The general mode spectrum includes a discrete spectrum of bound modes and continuous spectra of semi-bound and radiation modes. We calculate all types of modes by making use of the stack matrix technique. The present work, which arose from the requirement of creating an efficient mathematical tool for the simulation of TCRFs, provides the complete analysis of general SAW multi-channel structures.     

Amorphous hydrogenated carbon films used as masks for silicon microtips fabrication in a reactive ion etching with SF6 plasma

A room temperature fabrication process for silicon microtips has been developed using amorphous hydrogenated carbon films as masks for silicon etching. Reactive ion etching using an SF₆ plasma has been employed to sharpen the microtips without any thermal oxidation technique.     

Combination of e-beam lithography and of high velocity AIN/diamond-layered structure for SAW filters in X band

In this work, we report on the fabrication results of surface acoustic wave (SAW) devices operating at frequencies up to 8 GHz. In previous work, we have shown that high acoustic velocities (9 to 12 km/s) are obtained from the layered AIN/diamond structure. The interdigital transducers (IDTs) made of aluminium with resolutions up to 250 nm were successfully patterned on AIN/diamond-layered structures with an adapted technological process. The uniformity and periodicity of IDTs were confirmed by field emission scanning electron microscopy and atomic force microscopy analyses. A highly oriented (002) piezoelectric aluminum nitride thin film was deposited on the nucleation side of the CVD diamond by magnetron sputtering technique. The X-ray diffraction effectuated on the AIN/diamond-layered structure exhibits high intensity peaks related to the (002) AIN and (111) diamond orientations. According to the calculated dispersion curves of velocity and the electromechanical coupling coefficient (K2), the AIN layer thickness was chosen in order to combine high velocity and high K2. Experimental data extracted from the fabricated SAW devices match with theoretical values quite well.     

Deposition of ZnO thin films on SiO2/Si substrate with Al2O3 buffer layer by radio frequency magnetron sputtering for high frequency surface acoustic wave devices

ZnO films with c-axis (0002) orientation have been grown on SiO₂/Si substrates with an Al₂O₃ buffer layer by radio frequency magnetron sputtering. Crystalline structures of the films were investigated by X-ray diffraction, atomic force microscopy and scanning electron microscopy. The center frequency of the surface acoustic wave (SAW) device with a 4.8 μm thick Al₂O₃ buffer layer was measured to be about 408 MHz, which was much higher than that (265 MHz) of ZnO/SiO₂/Si structure and approaches that (435 MHz) of ZnO/sapphire. It is a possible way as an alternative for the sapphire substrate for the high frequency SAW device applications, and is also useful to integrate the semiconductor and high frequency SAW devices on the same Si substrate.     

Detection and high-precision positioning of liquid droplets using SAW systems

The capability to accurately handle liquids in small volumes is a key point for the development of lab-on-chip devices. In this paper, we investigate an application of surface acoustic waves (SAW) for positioning micro-droplets. A SAW device based on a 2 x 2 matrix of inter-digital transducers (IDTs) has been fabricated on a (YXI)/128 degrees LiNbO3 substrate, which implies displacement and detection in two dimensions of droplets atop a flat surface. Each IDT operates at a given frequency, allowing for an easy addressing of the active channel. Furthermore, very low cross-talk effects were observed as no frequency mixing arose in our device. Continuous as well as pulsed excitations of the IDTs have been studied, yielding, respectively, continuous and step-by-step droplet displacement modes. In addition, we also have used these two excitation types to control the velocity and the position of the droplets. We also have developed a theoretical analysis of the detection mode, which has been validated by experimental assessment.     

A multi-IDT input tunable surface acoustic wave filter

Tunable surface acoustic wave (SAW) filters (TSF) have been widely used in the wireless telecommunication systems. A prototype of multi-IDT (interdigital transducer) input TSF has been developed. The device consists of 11 IDTs paralleled in the SAW propagation path. Different SAW filter configurations are realized by selecting or combining various IDTs, resulting in the tunability of both center frequency and 3 dB bandwidth. The center frequencies of the SAW filter range from 126.8 to 199.1 MHz; the 3 dB bandwidths range from 15.2 to 58.9 MHz. Impedance weighting methods have been applied. The passband ripple has been reduced from 6.44 to 1.37 dB after resistance weighting     

Infrared light absorption of silver film coated on the surface of femtosecond laser microstructured silicon in SF6

Absorptive properties of 100 nm thick silver (Ag) films coated on the surface of microstructured silicon prepared by femtosecond laser pulses irradiation in SF₆ were measured in a wavelength range of 1.33–16.7 µm. Greatly enhanced light absorption of Ag films was observed in the entire measured wavelength range. For sample with 6–8 µm spikes, the absorptance is approximately 0.9 and essentially unchanged in the wavelength region of 1.33–10 µm, and decreases slightly when λ > 10 µm, but keeps higher than 0.75 over the whole measured wavelength range. The infrared absorption is strongly related to the height and density of the spikes. While for the samples without Ag coating, the absorption is much lower than that of the Ag films. Multiple reflection of light between spikes and surface plasmon excitation of nano-particles on the spikes surface may lead to the strongly enhanced infrared absorption in such a wide wavelength range.