硅圆片表面活化工艺参数优化研究

利用正交实验,对单晶硅表面活化工艺中重要参数对活化效果的影响进行了研究,并优化了工艺.实验针对RCA活化溶液处理工艺的特点,选择溶液配比、处理时间和温度3个重要因素为研究对象,以30%盐水为测试液,以接触角为指标,评估了这3个因素对活化效果的影响规律.对实验结果的分析表明,在此三因素中,活化温度与活化效果的关系最密切,...     

紫外光辐射在硅片表面活化键合中的应用

在硅圆片表面亲水活化键合工艺中引入了紫外光照射并对其工艺参数和效果进行了评估.基于基本键合流程,通过对比实验,研究紫外光照与否,以及照射时间长短对硅片键合质量的影响.同时利用红外检测仪,拉伸强度测试仪以及原子力显微镜分别对键合面积,键合强度和表面粗糙度等因素进行了测定.此外,利用了承载率这一指标,对比了达到相同承载率时所需要克服的形变,以此对硅片的键合能力进行了评估.各项结果表明,硅片经过C波段和V波段的混合紫外光照射5min,相比于不经过紫外辐射的硅片,表面粗糙度得到了明显的改善,并获得最高的键合能力和拉伸强度.长时间的紫外辐射会破坏表面,进而影响其键合能力,使得拉伸强度降低.     

Ultra-high vacuum direct bonding of a p-n junction GaAs wafer using low-energy hydrogen ion beam surface cleaning

Low-energy hydrogen ion bombardment is used to clean GaAs surfaces. The hydrogen ions produce contamination-free surfaces without changes in surface composition (stoichiometry) and surface roughness. The wafers were brought into contact at room temperature after cleaning under ultra-high vacuum (UHV), and bonded over the whole area (2 inches) without application of external mechanical pressure. After bonding, the p-GaAs/n-GaAs wafer pair was annealed at 200 °C for 30 min under UHV conditions (<5×10⁻¹⁰ mbar) to improve the interface bonding strength and to achieve a full-area wafer bonding.Infrared (IR) imaging of the as-bonded wafers directly reveal the real bonding behaviour. High-resolution transmission electron microscopy images reveal that the wafers have been directly bonded without damage of the crystal lattice or intermediate layer and the interface is smooth. Current-voltage characterization shows near-ideal forward characteristics and the recombination in p-n junction space charge region.     

The Au/Si bonding interface studied by infrared microscope

The interface of Au/Si(100) eutectic bonding was studied by infrared microscope. During Au/Si(100) bonding, the dissolution of the Si(100) surface primarily occurs by the formation of the craters which result in many square black spots in the IR images. The formation of the craters is ascribed to the anisotropic nature of Au/Si reaction that results in three-dimensional dissolution behavior on the bare Si(100) side. In order to further test the anisotropy hypothesis, Au/Si(111) bonding was also studied. Under the same bonding conditions, triangular black spots were observed in the IR images and triangular pits were found on the Si(111) surface.     

Investigation of bonding strength and sealing behavior of aluminum/stainless steel bonded at room temperature

This article reports the direct bonding of aluminum (Al) [99.999% (5N), 99% (2N)] and stainless steel SUS (304, 316) without heating for sealing in the ultra high vacuum (UHV) components. For bonding, the smooth surfaces of the Al and SUS specimens were activated using argon fast atom beam (Ar-FAB) for 1-60 and 60 min, respectively, in a background pressure of 6.0 × 10⁻⁵ Pa followed by close contact under an external pressure of 960 N. High bonding strength resulted in the bonded mates of Al and SUS304 activated for 30 and 60 min, respectively, due to the adhesion forces of the surface atoms. Tensile pulling tests showed bulk fractures in Al with impurity dependent bonding strength. The bonding strengths for the Al5N/SUS304 and Al2N/SUS304 specimens were higher than 60 and 100 MPa, respectively. For the sealing test, the smooth surface of the SUS316 flange containing a hole was bonded with Al after surface activation 60 and 30 min, respectively. Leak rates for Al5N/SUS316 and Al2N/SUS316 specimens were 1.5 × 10⁻¹¹ and 2.0 × 10⁻¹¹ Pa m³/s, respectively. These results satisfy the permissible leakage of a large-sized UHV chamber. Time dependence of the leak test behavior for both specimens shows a stable leak rate. Therefore, the sealing of Al/SUS316 may be utilized for the fabrication of corrosion free joints for fluid flow in the cooling of electron guns of small size equipment such as portable scanning electron microscopes in UHV pressure.     

InP/GaAs低温键合的新方法

通过对 InP/GaAs 异质键合实验方法的研究,提出了包括表面活化处理、真空预键合和退火热处理的三步法,在350℃低温下实现了InP/GaAs异质材料的键合。界面电流 电压(I V)特性的研究表明,350℃样品的界面过渡层极薄,电子主要以隧穿方式通过界面,而450℃的扩散使得过渡层增厚,界面电流 电压特性可视为双肖特基二极管的反向串联。同时,对键合样品也进行了拉力测试,实验结果表明 450℃样品的键合强度优于350℃样品。最后,对InP/GaAs异质材料的键合机理进行了探讨。     

Enhancement of ceramic-to-metal adhesive bonding by excimer laser surface treatment

A silicon nitride (Si₃N₄) based ceramic cutting material and a structural alloy steel (SAE 4340) were surface-treated using a 800 mJ KrF excimer laser with an aim to improve the ceramic-to-metal bond strength. For these two materials, the effects of laser energy density and the number of pulses upon the surface morphologies of the laser-treated surfaces to be joined were examined. Conical surface microstructures were generally observed on the laser-treated surfaces of the Si₃N₄ material, and the number of conical features was found to be significantly influenced by the laser energy density. Moreover, the results of XPS have shown that the surface chemistry of the ceramic was altered after being laser treated. On the other hand, excimer laser treatment had caused the alloy steel surfaces be melted and resulted in some “beach-mark” features. However, the laser energy density has little effect on the overall surface morphology and the roughness of the treated surfaces. Shear tests were performed on adhesive bonded samples of the laser-treated ceramic and alloy steel. Significant improvement in adhesion shear strength was obtained for the laser-treated samples as compared with those tested in the as-received and mechanically abraded conditions. The required laser operation condition for achieving good shear joint strength was discussed.     

Void-free strong bonding of surface activated silicon wafers from room temperature to annealing at 600 °C

In order to investigate the high temperature application of surface activated silicon/silicon wafer bonding, the wafers were bonded at room temperature and annealed up to 600 °C followed by optical, electrical, mechanical and nanostructure characterization of the interface. Void-free interface with high bonding strength was observed that was independent of the annealing temperature. The bonding strength was as high as 20 MPa. The normalized interfacial current density was increased with the increase in the annealing temperature. A thin interfacial amorphous layer with a thickness of 8.3 nm was found before annealing, which was diminished at 600 °C. A correlation between the current density and nanostructure of the interface was observed as a function of the annealing temperature. The high quality silicon/silicon bonding indicates its potential use not only in low temperature microelectronic applications, but also in high temperature harsh environments.     

感应加热硅衬底上的金膜用于圆片键合

选用垂直于其表面的射频磁场对镀金膜的硅片进行了感应加热,由于磁场对材料加热具有选择性,感应热量首先作用于硅片上的金膜内,硅片先被传导加热到一定温度,然后被感应加热.理论上分析了该方法的可行性,初步试验结果表明,虽然金膜厚度低于感应趋肤深度,但在没有应用感应加热基座的情况下,几秒钟内就形成了金硅共晶相.另外,升温速度快,有效减少了加热过程中金对硅的扩散影响,该方法可广泛用于微系统封装中的圆片键合.     

Non-firing ceramics: Effect of adsorbed water on surface activation of silica powder via ball milling treatment

“Non-firing” ceramics have recently attracted much attention because many functional ceramics can be achieved by this method without the sintering process. The underlying idea of this method is to activate the surface of the particles by ball milling. In this study, the effect of adsorbed water on the surface of raw silica powder was investigated. Amorphous silica powder was mechanically treated by a rotating ball mill system and the surface activity of the raw and treated silica powders was measured based on the water adsorbed volume on the powder surface. The results showed that the surface activity of the silica powder increased with the increasing adsorbed water volume on the surface of the silica powder. In addition, better mechanical properties evaluated by the Vickers hardness test were achieved for the silica with more water adsorbed on its surface. The effect of milling energy and ball to powder ratio on activation of the silica was also investigated.     

Effects of boron and silicon on microstructure and isothermal solidification during TLP bonding of a duplex stainless steel using two Ni–Si–B insert alloys

Abstract

The influence of B and Si on microstructure and isothermal solidification during transient liquid phase (TLP) bonding of a duplex stainless steel using MBF-30 (Ni–4·5Si–3·2B, wt-%) and MBF-35 (Ni–7·3Si–2·2B, wt-%), was investigated. Based on experimental studies, the formation of Ni₃B within the joint centreline is dependent on B content; the morphology of Ni₃Si is dominated by Si concentration. There was a deviation between the times for complete isothermal solidification obtained by the experiment and the conventional TLP bonding model. Isothermal solidification of the liquid dependent on different solidification regimes is suggested to be a controlling factor contributing to the change in the rate of isothermal solidification observed using the two filler metals.     

真空蒸镀红荧烯薄膜及其形貌分析

红荧烯(rubrene)即5,6,11,12-四苯基并四苯,是一种重要的小分子有机半导体材料,可以用以制备红荧烯有机场效应管和太阳能光伏器件。本文首先对传统的热蒸发真空系统进行改造,使之能蒸镀有机薄膜。在一定的蒸发温度下,经过不同蒸镀时间蒸镀红荧烯薄膜,蒸镀时间分别为5,6,7,8 h,获得了具有多晶结构的红荧烯薄膜,并对其形貌进行了分析。结果表明非晶结构的红荧烯薄膜首先在硅衬底上生长,非晶红荧烯薄膜生长至一定厚度后,多晶结构的红荧烯从其中形成。     

Monte Carlo simulation of steps behavior on Si(111) surface during sublimation

Investigation of steps behavior on vicinal (111) surface during sublimation was carried out using 3D-model of diamond-like crystal. Step width periodic variations predicted by Schwoebel were found by modeling. Diamond-like crystal structure results in the asymmetry in atom fluxes to the upper or lower terraces, with the sign of asymmetry depending on the step structure. The essential effect of vacancies created on terraces on migration length of atoms was revealed.     

基于低温直接键合的血细胞计数芯片结构制备

研究了一种新颖的微流管道血细胞计数器的结构及其工作原理,采用流体动力学对其液体分层流动特性进行了仿真分析,结合图形制备和低温直接键合工艺制作了硅基微流体管道血细胞计数器结构,并采用红外透射方法对微流体管道结构进行了检测.对封闭管道的流通性及结构的键合强度也进行了测量.研究分析表明,采用上述工艺制备的微流体芯片结构与电子器件兼容性好,具有良好的化学惰性和热稳定性,而且管道结构规则,精度高,键合界面层薄,具有较好的应用前景.     

WC/Ni60真空熔烧涂层的组织结构特性

研究了真空熔烧WC Ni60复合涂层的显微组织结构特性 ,并测定了沿层深方向的显微硬度分布。研究结果表明 ,涂层与母材 4 5钢在界面处形成牢固的冶金结合 ,界面两侧的显微硬度呈连续性分布     

真空蒸镀钝化太安(PETN)薄膜的研究

对真空蒸镀钝化太安 (PETN)炸药薄膜进行了研究。分析了真空度、蒸镀温度、蒸发速率、基片表面状态等因素对形成薄膜的影响。得出了适宜蒸镀的真空条件、最佳蒸镀温度和蒸发速率 ;提出了增加薄膜和基片附着力的方法。     

A new material platform of Si photonics for implementing architecture of dense wavelength division multiplexing on Si bulk wafer

Abstract

A new materials group to implement dense wavelength division multiplexing (DWDM) in Si photonics is proposed. A large thermo-optic (TO) coefficient of Si malfunctions multiplexer/demultiplexer (MUX/DEMUX) on a chip under thermal fluctuation, and thus DWDM implementation, has been one of the most challenging targets in Si photonics. The present study specifies an optical materials group for DWDM by a systematic survey of their TO coefficients and refractive indices. The group is classified as mid-index contrast optics (MiDex) materials, and non-stoichiometric silicon nitride (SiN_x) is chosen to demonstrate its significant thermal stability. The TO coefficient of non-stoichiometric SiN_x is precisely measured in the temperature range 24–76 °C using the SiN_x rings prepared by two methods: chemical vapor deposition (CVD) and physical vapor deposition (PVD). The CVD-SiN_x ring reveals nearly the same TO coefficient reported for stoichiometric CVD-Si₃N₄, while the value for the PVD-SiN_x ring is slightly higher. Both SiN_x rings lock their resonance frequencies within 100 GHz in this temperature range. Since CVD-SiN_x needs a high temperature annealing to reduce N–H bond absorption, it is concluded that PVD-SiN_x is suited as a MiDex material introduced in the CMOS back-end-of-line. Further stabilization is required, considering the crosstalk between two channels; a ‘silicone’ polymer is employed to compensate for the temperature fluctuation using its negative TO coefficient, called athermalization. This demonstrates that the resonance of these SiN_x rings is locked within 50 GHz at the same temperature range in the wavelength range 1460–1620 nm (the so-called S, C, and L bands in optical fiber communication networks). A further survey on the MiDex materials strongly suggests that Al₂O₃, Ga₂O₃ Ta₂O₅, HfO₂ and their alloys should provide even more stable platforms for DWDM implementation in MiDex photonics. It is discussed that the MiDex photonics will find various applications such as medical and environmental sensing and in-vehicle data-communication.     

Synthesis of amorphous Si nanowires from solid Si sources using microwave irradiation

Si nanowires were synthesized from Si wafers and from thin Si films deposited on various substrates by microwave irradiation. The power and time were key determinants of the diameter and morphology of the synthesized Si nanowires. The nanowires had an amorphous structure due to the extremely high heating rate. Carbon coating of the Si nanowires was easily achieved by introducing acetylene after synthesizing the nanowires. Carbon-coated Si nanowires are potential candidates for use as the anode material in next generation Li-ion batteries.     

A new palladium-free surface activation process for Ni electroless plating on ABS plastic

A novel palladium-free and environmentally friendly surface activation process for Ni electroless plating was studied. The activation was carried out by immobilizing Ni nanoparticles as catalyst site on the ABS plastic surface. It is a cost effective activation method since Ni nanoparticles were successfully used as catalyst. The surface of ABS foils after etching and activating was investigated by XPS to get more information about the interfacial reaction mechanisms. Ni nanoparticles were uniformly formed on the substrate and a glossy and smooth Ni-P plating layer was obtained according to the SEM photographs. XRD pattern showed that the Ni-P layer is amorphous.