A novel approach for codoping in ZnO by AlN

In the present work, we have illustrated a new idea of codoping in ZnO with AlN as codopant to achieve p-ZnO. ZnO films doped with different concentrations of AlN were grown by RF magnetron sputtering. The AlN doped ZnO (ANZO) films grown on sapphire substrate were subjected to X-ray diffraction (XRD), reflectance measurements, Hall measurements, atomic force microscopy (AFM) and energy dispersive spectroscopy (EDS) analysis. XRD analysis reveals that all films have grown in the form of hexagonal wurtzite structure with (002) preferential orientation. The FWHM of (002) peak decreases till 1 mol% of AlN and increases for further addition of AlN indicating the incorporation of more impurities (dopants). The reflectance measurements suggest that the reflectance decreases at lower concentration and increases above 1 mol% of AlN in the visible region ranging from 400 to 800 nm. Hall measurements show that all the films are n-type. The electron concentration increases initially and then decreases for further addition of AlN (>1 mol%) suggesting the incorporation of nitrogen into the film at higher concentrations of AlN. The presence of N in the films is further confirmed by EDS analysis. The rms surface roughness measured by AFM decreases exponentially with dopant concentration. The figure of merit increases upon codoping with AlN.     

Influence of incidence angle and distance on the structure of aluminium nitride films prepared by reactive magnetron sputtering

Aluminum nitride (AlN) films were reactively deposited on (100) oriented silicon substrates by reactive radio frequency (RF) magnetron sputtering for different incidence angles and distances between substrate and target.X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to consider the influence of process parameters such as reactive gas flow rate, grazing incidence angle (α), and distance (d) between substrate and target surface on the property of AlN films. XRD results showed that AlN film prepared at a constant distance (d) of 3 cm and an incidence angle of 45° revealed a mixture of AlN (002), (100), and (101) planes, while the film prepared at α = 0° revealed a strong AlN (002) orientation which has a perpendicular growth direction to the substrate surface. AFM results showed that AlN film prepared at α = 0° exhibited more flat surface morphology than that of film prepared at α = 45°.     

Pulsed-DC sputtering of molybdenum bottom electrode and piezoelectric aluminum nitride films for bulk acoustic resonator applications

Various sputtering conditions were employed to explore the feasibility of depositing a suitably textured layer of molybdenum film, as a bottom-electrode of a film bulk acoustic resonator, on a silicon substrate. A fully (110)-textured Mo film, with its full width at half maximum (FWHM) of rocking curve as low as 1.1°, could be made when a 25-nm thick primer layer of aluminum nitride (AlN) film was pre-deposited between Si and Mo. In turn, the degree of the (0002) texture of a subsequently deposited AlN piezoelectric film, about 1.4 μm in thickness, was found to be largely decided by the degree of the (110) texture of the Mo film beneath it. The residual stress of this AlN piezoelectric film also varied virtually according to the texture quality of the underlying Mo film. The optimal process condition resulted in a piezoelectric AlN thin film having a (0002) FWHM as low as 0.98°, and a slightly compressive residual stress of 439 MPa at the same time.     

Synthesis of c-axis oriented AlN thin films on different substrates: A review

Highly c-axis oriented AlN thin films have been deposited by reactive sputtering on different substrates. The crystallographic properties of layered film structures consisting of a piezoelectric layer, aluminum nitride (AlN), synthesized on a variety of substrates, have been examined. Aluminum nitride thin films have been deposited by reactive pulsed-DC magnetron sputtering using an aluminum target in an Ar/N₂ gas mixture. The influence of the most critical deposition parameters on the AlN thin film crystallography has been investigated by means of X-ray diffraction (XRD) analysis of the rocking curve Full-Width at Half Maximum (FWHM) of the AlN-(0 0 0 2) peak. The relationship between the substrate, the synthesis parameters and the crystallographic orientation of the AlN thin films is discussed. A guide is provided showing how to optimize these conditions to obtain highly c-axis oriented AlN thin films on substrates of different nature.     

Detection of various self-assembled monolayers by AlN-based film bulk acoustic resonator

Various self-assembled monolayers such as carcinoembryonic antigen (CEA), beta actin, and bovine serum albumin (BSA) were detected using an AlN-based film bulk acoustic resonator (FBAR). AlN thin film was deposited by reactive RF magnetron sputtering, on a substrate of Mo (100 nm)/Ti (34 nm)/SiO₂ (480 nm)/Si (300 μm)/Si₃N₄ (300 nm). The film showed a strongly c-axis preferred orientation with a main (0 0 2) peak, as well as a good full width at half maximum (FWHM) of 2.50° in XRD and rocking curve results. The AlN-based FBAR was confirmed to have a resonant frequency of 2.477 GHz and a sensitivity of 3514 Hz cm²/ng. In beta actin, BSA, and CEA, the frequency properties showed variation values of 472.142, 932.573, and 685.421 kHz and mass sensitivities of 3530, 3506, and 3514 Hz-cm²/ng, respectively. The FBAR sensor was confirmed to be very useful for detecting target antigens through the binding of an antigen and an anti-body.     

Improvement of thickness uniformity and crystallinity of AlN films prepared by off-axis sputtering

We improved both the thickness uniformity and crystallinity of Aluminum nitride (AlN) films deposited by off-axis sputtering. The results in thickness uniformity and X-ray rocking curve full-width at half-maximum (FWHM) of AlN (0 0 0 2) are achieved to be ±0.2% and 1.4°, respectively on a 100 mm Si (1 0 0) substrate. The residual stress can be controlled from tensile to compressive by varying sputtering parameters such as gas pressure, RF power and DC bias voltage applied to a substrate without degradation in the crystallinity and thickness uniformity.     

Deposition of AlN films by reactive sputtering: Effect of radiofrequency substrate bias

Piezoelectric AlN thin films were deposited on Silicon substrates by triode reactive sputtering. The variation of residual stress versus bias voltage on the substrate was investigated. A compressive stress was always observed with a maximum value for a negative substrate bias of 50 V. For higher negative bias voltage values, the compressive stress decreases. X-ray diffraction measurements showed two kinds of growth orientation. First, without bias voltage, films are well crystallized and (002) oriented. Second, with bias voltage, the (002) orientation disappears and a small peak appears (situated in the 2θ = 32°-33° range) which can be attributed to (100) orientation. Finally, the influence of compressive stress and ion bombardment on the change of orientation is discussed.     

Fabrication of particle free epitaxal AlN thin films by reactive PLD combined with an electron beam and a rotating crucible

An AlN epitaxial film without projections or spiral growth features was successfully fabricated on a (0 0 0 1) sapphire substrate by reactive laser ablation of a liquid Al target in NH₃ using a 248 nm laser. The liquid Al target was prepared with an electron beam in a rotating crucible. The surface of the rotating liquid Al target was always smooth. Spiral growth features were greatly suppressed. AlN films have a surface roughness less than 0.3 nm. The X-ray rocking curve's narrowest FWHM was 180 arcsec, which is nearly identical to that recently reported in films grown by MOCVD or reactive MBE.     

Characteristics of laser-annealed ZnO thin film transistors

We investigated the effects of laser annealing on ZnO thin film transistors (TFTs). ZnO layers were deposited on a bottom-gate patterned Si substrate by radio-frequency sputtering at room temperature. Laser annealing of the ZnO films reduced the full width at half maximum of the ZnO (002) diffraction peak from 0.49° to 0.1°. It reveals that the crystalline quality is improved by annealing effect. A SiO₂ formed in low temperature was used as the gate dielectric. Unannealed ZnO-TFTs were operated in enhancement mode with a threshold voltage of 21.6 V. They had a field-effect mobility of 0.004 cm²/Vs and an on/off current ratio of 134. Laser annealing of the ZnO-TFTs by 200 laser pulses reduced their threshold voltage to 0.6 V and increased their field-effect mobility to 5.08 cm²/Vs. The increase of mobility is originated from the crystallization enhancement of ZnO films after laser annealing.     

Influence of aluminum nitride interlayers on crystal orientation and piezoelectric property of aluminum nitride thin films prepared on titanium electrodes

Highly c-axis-oriented aluminum nitride (AlN) thin films have been prepared on titanium (Ti) bottom electrodes by using AlN interlayers. The AlN interlayers were deposited between Ti electrodes and silicon (Si) substrates, such as AlN/Ti/AlN/Si. The crystallinity and crystal orientation of the AlN films and Ti electrodes strongly depended on the thickness of the AlN interlayers. Although the sputtering conditions were the same, the X-ray diffraction intensity of AlN (0002) and Ti (0002) planes drastically increased, and the full-width at half-maximum (FWHM) of the X-ray rocking curves decreased from 5.1° to 2.6° and from 3.3° to 2.0°, respectively. Furthermore, the piezoelectric constant d₃₃ of the AlN films was significantly improved from − 0.2 to − 4.5 pC/N.     

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Aluminum nitride (AlN) piezoelectric thin films with c-axis crystal orientation on polymer substrates can potentially be used for development of flexible electronics and lab-on-chip systems. In this study, we investigated the effects of deposition parameters on the crystal structure of AlN thin films on polymer substrates deposited by reactive direct-current magnetron sputtering. The results show that low sputtering pressure as well as optimized N₂/Ar flow ratio and sputtering power is beneficial for AlN (002) orientation and can produce a highly (002) oriented columnar structure on polymer substrates. High sputtering power and low N₂/Ar flow ratio increase the deposition rate. In addition, the thickness of Al underlayer also has a strong influence on the film crystallography. The optimal deposition parameters in our experiments are: deposition pressure 0.38 Pa, N₂/Ar flow ratio 2:3, sputtering power 414 W, and thickness of Al underlayer less than 100 nm.     

Synthesis of aluminum nitride thin films by filtered arc ion plating deposition

Thin films of aluminum nitride (AlN) were deposited on stainless steel and glass substrates by a modified deposition technique, filtered arc ion plating, at an enhanced deposition rate. X-ray diffraction spectra confirmed the exclusive presence of AlN hexagonal wurtzite phase. Under a mixed gas (Ar + N₂) pressure of 0.90 Pa and a bias voltage of − 400 V, the deposited films exhibited a fairly low surface roughness of 2.23 nm. The thin films were proved higher than 75% transparent in the visible spectral region. The bonding strength between the film and substrate was verified higher than 20 N. Thus high performance of such AlN thin films can be expected in applications.     

Effect of bias voltage on microstructure, mechanical and wear properties of Al-Si-N coatings deposited by cathodic arc evaporation

Al-Si-N coatings were deposited on tungsten carbide (WC-Co) and silicon wafer substrates using Cr and AlSi (12 at.% Si) alloy targets using a dual cathode source with short straight-duct filter in the cathode arc evaporation system. Al-Si-N coatings were synthesized under a constant flow of nitrogen, using various substrate bias voltages at a fixed AlSi cathode power. To enhance adhesive strength, the Cr/(Cr_xAl_ySi_z)N graduated layer between the top coating and the substrate was deposited as a buffer interlayer. The effects of bias voltage on the microstructure, mechanical and wear properties of the Al-Si-N films were investigated. Experimental results reveal that the Al-Si-N coatings exhibited a nanocomposite structure of nano-crystalline h-AlN, amorphous Si₃N₄ and a small amount of free Si and oxides. It was also observed that the deposition rate of as-deposited films gradually decreased from about 25.1 to 18.8 nm/min when the substrate bias was changed from − 30 to − 150 V. The XRD results revealed that h-AlN preferred orientation changed from (002) to (100) as the bias voltage increased. The maximum hardness of approximately 35 GPa was obtained at the bias voltage of −90 V. Moreover, the grain size was inversely proportional to the hardness of the film. Wear test results reveal that the Al-Si-N film had a lower coefficient of friction, between 0.5 and 0.7, than that 0.7 of the AlN film.     

High quality GaN film overgrown on GaN nanorods array template by HVPE

The high density vertically aligned GaN nanorods array was fabricated by thermal evaporation of GaN powder with the assistance of HCl gas. The GaN nanorods array was used as template for GaN film growth by hydride vapor phase epitaxy (HVPE). The full width at half maximum values (FWHM) of high-resolution X-ray diffraction (HRXRD) rocking curves for the GaN film with GaN nanorods array template are 247 arc sec (002 reflection) and 308 arc sec (102 reflection), while those for the GaN film without GaN nanorods array template are 292 and 369 arc sec, respectively. This result indicates a significant reduction of dislocation density in the overgrown GaN film with GaN nanorods array template. Photoluminescence spectra measurements reveal the compressive strain relaxation and an improvement in the quality of the overgrown GaN film with GaN nanorods array template as compared to the regrown GaN film without GaN nanorods array template, which is consistent with the trend observed by HRXRD.     

The fabrication and application of ZnO:Al thin films in low-frequency inductively coupled plasma fabricated silicon solar cell

A home-made radio frequency magnetron sputtering is used to systematically study the structural, electrical, and optical properties of aluminum doped zinc oxide (ZnO:Al) thin films. The intensity of the (002) peak exhibits a remarkable enhancement with increasing film thickness. Upon optimization, we achieved low resistivity of 4.2 × 10^− 4 Ω cm and high transmittance of ~ 88% for ZnO:Al films. Based on the present experimental data, the carrier transport mechanism is discussed. It is found that the grain boundary scattering needs to be considered because the mean free path of free carrier is comparable to the grain size. The 80 nm-ZnO:Al thin films are then deposited onto low-frequency inductively coupled plasma fabricated silicon solar cells to assess the effect of ZnO:Al thin films on the performance of the solar cells. Optimized ZnO:Al thin films are identified as transparent and conductive oxide thin film layers.     

Field emission from carbon nanotubes in DC and pulsed mode

Multi-wall Carbon Nanotube (CNT) emitters were tested in a combined diode-RF electron gun. Field emission of the nanotubes was observed at 5-30 MV/m, using a 250 ns FWHM long pulse with a peak voltage of 80-470 kV. The field emission threshold is compatible with that found from previous DC testing. We have extracted from a continuous field emitter up to a nanoCoulomb of charge and measured an emittance of 4 mm mrad with a 2 pC electron beam. The total charge emission during RF operation, using the 1.5 GHz, 2 cell RF structure, was found dependent on its period. RF operation showed that back bombarding electrons with up to 5 MeV did not impair the emission stability of the CNTs.     

Surface phonon polariton of wurtzite AlN thin film grown on sapphire

Polarized infrared attenuated total reflection (ATR) with Otto configuration was employed to access the surface phonon polariton (SPP) characteristics of wurtzite aluminium nitride (AlN) thin film grown on sapphire (Al₂O₃) substrate. The surface and guided wave polariton dispersion curves for the studied structure were derived by taking into account thin film and substrate anisotropy. From the p-polarized ATR spectrum, one prominent peak corresponds to the SPP mode of AlN thin film was clearly observed at 824 cm⁻¹. In addition, four guided wave modes were also detected at 467, 593.5, 633.5 and 668 cm⁻¹. For the s-polarized ATR spectrum, five pronounced dips associated to the guided wave modes were detected. The obtained results were in good agreement with the ATR spectra calculated based on the standard transfer matrix formulation. The origin of the observed ATR dips were verified from the dispersion curves simulated based on air/AlN epilayer/AlN buffer layer/Al₂O₃ model.     

Characterization of Pt/AlN/Pt-based structures for high temperature, microwave electroacoustic devices applications

Highly c-axis oriented AlN films, 3.15 μm thick, were grown by rf reactive sputtering technique at 200 °C on bare and Pt-covered Si(100) substrates previously oxidized to a thickness of about 2 μm in wet oxygen atmosphere. A Pt film, 2200 Å thick, was then sputtered on the free surface of the AlN/Pt/SiO₂/Si multilayer at 200 °C without breaking the vacuum in order to avoid any oxidation effects of the layers. The multilayers were then annealed in air at 900 °C for different time lengths up to 32 h in order to test the materials' resistivity to harsh environment. The influence of this high temperature annealing (HTA) on the thin films' crystallinity, as well as on the c-AlN piezoelectricity and Pt sheet resistivity was investigated at room temperature before and after each annealing. X ray diffraction investigations revealed that the films' crystallinity was improved by the HTA: the full width of half maximum of the AlN(002) and Pt(111) peaks decreases from 0.39° to 0.24°, and from 0.42° to 0.28° after 32-hours-HTA. Scanning electron microscopy, four points probe and piezoelectricity tests revealed that the morphology and the sheet resistivity (in the range from 0.6 to 0.5 Ω/sq) of the outer Pt film, as well as the AlN piezoelectric constants d₃₃ (in the range from 6.2 to 7.4⋅10⁻¹² C/N) was quite unaffected by the HTA even after 32 h of annealing.     

Measurements of the bulk, C-axis electromechanical coupling constant as a function of AlN film quality

Piezoelectric thin film AlN has great potential for on-chip devices such as thin-film resonator (TFR)-based bandpass filters. The AlN electromechanical coupling constant, K(2), is an important material parameter that determines the maximum possible bandwidth for bandpass filters. Using a previously published extraction technique, the bulk c-axis electromechanical coupling constant was measured as a function of the AlN X-ray diffraction rocking curve [full width at half maximum (FWHM)]. For FWHM values of less than approximately 4 degrees , K (2) saturates at approximately 6.5%, equivalent to the value for epitaxial AlN. For FWHM values >4 degrees , K(2) gradually decreases to approximately 2.5% at a FWHM of 7.5 degrees . These results indicate that the maximum possible bandwidth for TFR-based bandpass filters using polycrystalline AlN is approximately 80 MHz and that, for 60-MHz bandwidth PCS applications, an AlN film quality of >5.5 degrees FWHM is required.     

Structural and optical characterization of c-axis textured BaTiO<Subscript>3</Subscript> thin films on MgO fabricated by RF magnetron sputtering

In this paper, BaTiO₃ thin films were prepared by RF magnetron sputtering on MgO substrates and their properties such as the crystal structure and optical waveguide properties were investigated. The optimum deposition parameters, such as substrate temperature, deposition pressure, gas flow ratio, the RF power and the after annealing temperature, were obtained in order to get the best BaTiO₃ film quality. The XRD results show that highly c-axis textured BaTiO₃ thin films were successfully grown on MgO substrate. Films obtained under the optimum deposition parameters, substrate temperature of 650°C, RF power of 50 W, deposition pressure 18 mTorr and gas flow ratio O₂/(Ar+ O₂) of 15% namely, reaches a full width at half maximum intensity (FWHM) of BaTiO₃ (002) XRD peak of 0.25°. The FWHM of BaTiO₃ (002) XRD peak was further reduced to 0.24° via post-treatment with furnace annealing (at 800°C for 2 h) which indicates the film crystal quality is further improved. The bright and sharp TE modes measured by m-line spectroscopy of the BaTiO₃ film were observed indicating its possible application in optical waveguide.