Control of carrier concentration of p-type transparent conducting CuScO2(0001) epitaxial films

Excess oxygen and 1-at% Mg co-doped CuScO₂[3R](0001) epitaxial films were prepared on a-plane sapphire substrates by combining two-step deposition and post-annealing techniques. The optical and electrical transport properties of the co-doped epitaxial films were compared with those of the CuScO₂[3R](0001) epitaxial films. No significant increase in optical absorption was observed in the co-doped epitaxial films, and the energy gap for direct allowed transition was estimated at 3.7 eV. The carrier concentration of CuScO₂[3R](0001) epitaxial films was controlled from ~ 10¹⁶ cm^- 3 to ~ 10¹⁸ cm^- 3 at room temperature by adjusting the excess oxygen and Mg co-doping. The electrical conductivity, carrier concentration, and Hall mobility of the most conductive film were 3.6 × 10^- 2 Scm^- 1, 8.5 × 10¹⁷ cm^- 3 and 2.6 × 10^- 1 cm²V^- 1 s^- 1 at room temperature, respectively. The temperature dependence of the electrical transport properties of the film exhibited semiconducting characteristics, and the activation energy estimated from the temperature dependence of the carrier concentration was 0.50 eV.     

Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition

MgZnO (magnesium-zinc-oxide) films were grown on (11-20) sapphire substrates and Zn-polar ZnO substrates by plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) employing microwave-excited plasma. Structural, electrical and optical properties were investigated by X-ray diffraction, atomic force microscope, Hall, transmittance and photoluminescence measurement. The c-axis lattice constant decreases proportionally to an increase in the Mg content of Mg_xZn_1 − xO films. Therefore, this indicates that Mg atoms can be substituted in the Zn sites. Mg contents in films on ZnO substrates increase up to 0.11. In addition, Ga doped ZnO films were grown on (11-20) sapphire substrates. The resistivity of the films on (11-20) sapphire is controlled between 1.2 × 10^− 3 Ω cm to 1 Ω cm by changing the process conditions. The overall results indicate the promising potential of this PE-MOCVD method for related (Zn, Mg)O films formation because of the reactivity of the radicals, such as oxygen radicals (O?).     

Structural and magnetic properties of epitaxial SnFe2O4 thin films

Epitaxial thin films of SnFe₂O₄ are deposited on sapphire substrate by ablating the sintered SnFe₂O₄ target with a KrF excimer laser (λ = 248 nm and pulsed duration of 20 ns). X-ray diffraction study reveals that SnFe₂O₄ films are epitaxial along (222) direction. The optical bandgap of SnFe₂O₄ film is estimated using transmittance vs. wavelength data and is observed to be 2.71 eV. The presence of hysteresis loop at room temperature in magnetization vs. field plot indicates the ferromagnetic behavior of the film. It is observed that the coercive field and remnant magnetization decrease with increase in temperature.     

Structural, electrical and optical properties of transparent Zn1 − xMgxO nanocomposite thin films

Zn_1 − xMg_xO thin films of various Mg compositions were deposited on quartz substrates using inexpensive ultrasonic spray pyrolysis technique. The influence of varying Mg composition and substrate temperature on structural, electrical and optical properties of Zn_1 − xMg_xO films were systematically investigated. The structural transition from hexagonal to cubic phase has been observed for Mg content greater than 70 mol%. AFM images of the Zn_1 − xMg_xO films (x = 0.3) deposited at optimized substrate temperature clearly reveals the formation of nanorods of hexagonal Zn_1 − xMg_xO. The variation of the cation-anion bond length to Mg content shows that the lattice constant of the hexagonal Zn_1 − xMg_xO decreases with corresponding increase in Mg content, which result in structure gradually deviating from wurtzite structure. The tuning of the band gap was obtained from 3.58 to 6.16 eV with corresponding increase in Mg content. The photoluminescence results also revealed the shift in ultraviolet peak position towards the higher energy side.     

Wide gap p-type degenerate semiconductor: Mg-doped LaCuOSe

Hole transport and optical properties were investigated on undoped and Mg-doped LaCuOS_1−xSe_x (x=0-1) epitaxial films. Both electrical conductivity and Hall mobility were found to increase monotonously with increasing Se content in the films. The increase in Hall mobility is considered to be associated with the increase in valence band dispersion. Mg ion doping increased hole concentrations in the undoped films by an order of magnitude to ∼2×10²⁰ cm⁻³, while Mg doping reduced mobility to merely half that of undoped films. The results suggest that hole scattering due to Mg impurity ions is suppressed by natural modulation doping originating from the layered structure of LaCuOS_1−xSe_x. Hole concentrations showed no temperature dependence, indicating degenerate conduction. The largest value for conductivity, 140 S cm⁻¹, was obtained with Mg-doped LaCuOSe epitaxial film. Accompanying characteristics included moderately high optical transparency in the visible region and blue photoluminescence.     

Influence of Cu off-stoichiometry on wide band gap CIGSe solar cells

The electric properties of solar cells based on co-evaporated Cu(In,Ga)Se₂ (CIGSe) thin film show a good tolerance regarding the absorber Cu content (y = [Cu]/([In] + [Ga])) for standard Ga concentration, i.e. x = [Ga] / ([In] + [Ga]) ~ 0.3. In the present contribution, we show that this tolerance is lost when the gallium content is increased. Wide bandgap CIGSe samples (x ~ 0.55) with a variation in y from 0.97 to 0.84 have been grown. The efficiency of the cells decreases from 12.6% to 6.5% for y = 0.97 and 0.84 respectively. For the lowest y, the efficiency is harmed because of a low short-circuit current density (J_sc), an increased voltage dependency in the current collection, which affects the fill factor (FF), and a decrease of the open-circuit voltage (V_oc). For y = 0.97 and 0.84 respectively, the decrease of the activation energy (E_a) from 1.36 to 1.24 eV indicates a shift of the area of the dominant recombination from the space charge region towards the interface. There seems to be evidence that reducing the Cu-content in the CIGSe thin film will cause a decrease in the width of the space charge region. Solar cells based on Cu-rich CIGSe (1.03 < y < 1.09) have also been fabricated and characterized. A strong deterioration of their electrical properties is observed despite the KCN etch of the segregated Cu_2 − xSe binary phases at the surface, suggesting the presence of residual Cu_2 − xSe precipitates within the layer.     

Crystal growth and structural analysis of zirconium sulphoselenide single crystals

A series of zirconium sulphoselenide (ZrS _x Se_3−x , where x = 0, 0·5, 1, 1·5, 2, 2·5, 3) single crystals have been grown by chemical vapour transport technique using iodine as a transporting agent. The optimum condition for the growth of these crystals is given. The stoichiometry of the grown crystals were confirmed on the basis of energy dispersive analysis by X-ray (EDAX) and the structural characterization was accomplished by X-ray diffraction (XRD) studies. The crystals are found to possess monoclinic structure. The lattice parameters, volume, particle size and X-ray density have been carried out for these crystals. The effect of sulphur proportion on the lattice parameter, unit cell volume and X-ray density in the series of ZrS _x Se_3−x single crystals have been studied and found to decrease in all these parameters with rise in sulphur proportion. The grown crystals were examined under optical zoom microscope for their surface topography study. Hall effect measurements were carried out on grown crystals at room temperature. The negative value of Hall coefficient implies that these crystals are n-type in nature. The conductivity is found to decrease with increase of sulphur content in the ZrS _x Se_3−x series. The electrical resistivity parallel to c-axis as well as perpendicular to c-axis have been carried out in the temperature range 303–423 K. The results obtained are discussed in detail.     

Structural and physical properties of Mg-doped CuAlO2 thin films

The CuAl_1−xMg_xO₂ (x = 0, 0.01, 0.02 and 0.05) thin films were successfully deposited on quartz substrate by using the RF magnetron sputtering technique. XRD patterns indicate that the delafossite structure could be guaranteed for all CuAl_1−xMg_xO₂ films. The conductivity measured at room temperature for CuAl_0.98Mg_0.02O₂ film is three orders of magnitude higher than that of undoped CuAlO₂ film and the band gaps of CuAl_1−xMg_xO₂ (x = 0, 0.01, 0.02 and 0.05) thin films decrease with the increase of the doping concentration, which is related to the formation of impurity energy levels with increasing the doping concentration.     

Synthesis of Zn1 − xCdxO bramble-like nanostructures

Ternary Zn_1 − xCd_xO bramble-like nanostructures with a Cd incorporation of about 6.7 at.% were produced onto Au-catalyzed Si substrate by thermal evaporation of Zn and Cd. The X-ray diffraction (XRD) analysis showed that the existence of lattice expansion in the c-axis orientation. The ultra-violet (UV) near-band-edge (NBE) emission of the Zn_1 − xCd_xO nanobrambles was red-shifted from 369 nm (3.37 eV) to 397 nm (3.13 eV) due to Cd substitution. The oxygen partial pressure was deemed as the critical experimental parameter for the formation of the bramble-like Zn_1 − xCd_xO nanostructures.     

Effect of yttrium doping on the dielectric properties of CaCu3Ti4O12 thin film produced by chemical solution deposition

Pure and yttrium substituted CaCu₃Ti_4 − xY_xO_{12 − x / 2} (x = 0, 0.02, 0.1) thin films were prepared on boron doped silica substrate employing chemical solution deposition, spin coating and rapid thermal annealing. The phase and microstructure of the sintered films were examined using X-ray diffraction and scanning electron microscopy. Dielectric properties of the films were measured at room temperature using electrochemical impedance spectroscopy. Highly ordered polycrystalline CCTO thin film with bimodal grain size distribution was achieved at a sintering temperature of 800 °C. Yttrium doping was found to have beneficial effects on the dielectric properties of CCTO thin film. Dielectric parameters obtained for a CaCu₃Ti_4 − xY_xO_{12 − x / 2} (x = 0.02) film at 1 KHz were k ∼ 2700 and tan δ ∼ 0.07.     

The properties of transparent semiconductor Zn1 − xTixO thin films prepared by the sol-gel method

Transparent semiconductor thin films of Zn_1 − xTi_xO (0 ≦ x ≦ 0.12) were deposited on alkali-free glass substrates by the sol-gel method. The effects of Ti addition on the crystallization, microstructure, optical properties and resistivity of ZnO thin films were investigated. The as-coated films were preheated at 300 °C, and then annealed at 500 °C in air ambiance. X-ray diffraction results showed all polycrystalline Zn_1 − xTi_xO thin films with preferred orientation along the (002) plane. Ti incorporated within the ZnO thin films not only decreased surface roughness but also increased optical transmittance and electrical resistivity. In the present study, the Zn_0.88Ti_0.12O film exhibited the best properties, namely an average transmittance of 91.0% (an increase of ~ 12% over the pure ZnO film) and an RMS roughness value of 1.04 nm.     

Ferroic metal-oxide films grown by polymer assisted deposition

Polymer assisted deposition is a versatile technique to grow simple and complex metal-oxide thin films. In this paper we report the structural and electrical properties of ferroic materials, namely La_0.67M_0.33MnO₃ (M = Sr and Ca) and Ba_1 − xSr_xTiO₃ (x = 0.3, 0.5, and 0.7) prepared using this process. The films were prepared on single crystalline LaAlO₃ substrates. The films were highly c-axis oriented and epitaxial in nature. The ferromagnetic La_0.67Sr_0.33MnO₃ and La_0.67Ca_0.33MnO₃ films show intrinsic transport properties with maximum magnetoresistance values (at applied field of 5 T) of − 50% and − 88%, respectively. The highest dielectric constant (∼ 1010) and tunability (∼ 69%) of Ba_1 − xSr_xTiO₃ film occurs at x = 0.3 for films, which is at the phase boundary of tetragonal and cubic.     

Deposition, characterization and biological application of epitaxial Li:ZnO/Al:ZnO double-layers

Double-layers of lithium doped ZnO (LZO) and aluminum doped ZnO (AZO) are grown on r-cut sapphire (r-Al₂O₃) crystal substrates by pulsed-laser deposition. The epitaxial double-layers are a-axis lattice oriented to the substrate. The LZO/AZO/r-Al₂O₃ samples have high optical transmission in the visible range and a bandgap energy of E_g = 3.28 eV according to the absorption edge of ZnO. The AZO bottom layers are electrically conductive (resistivity at room temperature ρ ~ 10^− 3 Ω cm) and LZO top layers are highly resistive (ρ ≥ 10⁵ Ω cm). Acoustic shear mode resonances in r-Al₂O₃ are excited by employing electric fields to the piezoelectric LZO layer (frequency interval 1.5-3 GHz). For biological applications, Madin-Darby canine kidney cells are cultivated on Platinum coated LZO/AZO/r-Al₂O₃ samples. Osmotic pressure applied to the cells increases or reduces the cell volume depending on the osmolarity of the medium.     

Hydrogen absorption in epitaxial bcc V (001) thin films analysed by statistical thermodynamics

Andersson, Aits and Hjörvarsson of Uppsala University measured hydrogen uptake in epitaxial bcc (body centred cubic) vanadium (V) (001) thin films of thickness, 50 nm and 100 nm, over temperature range between 443 K and 513 K. The reported equilibrium pressure-temperature-composition (P-T-C) relationships for the epitaxial bcc V (001) thin films showed appreciable extent of enhancement of H solubility compared with that for bulk bcc V. In this work, the reported equilibrium P-T-C relationships for the epitaxial bcc V(001) thin films by Andersson et al. were analysed in terms of statistical thermodynamics for H₂ gas partial pressure p(H₂) up to 100 Pa and H/V mole atom ratio x in VH_x up to 1. The present analysis results showed that, up to x = 0.75, the state of H in the V lattice was comparable to that in bulk VH_x specimen but that, in the range of x higher than 0.75, state of H in the thin film with the constrained basal plane condition was evidently distinguishable from that in non-constrained bulk VH_x. This was concluded to be the consequence of the tetragonal distortion of the bcc lattice with biaxially constrained condition at the bottom surface of the VH_x (001) thin film in the range of x exceeding 0.75.     

Structure and magnetic property of CoFe2−xSmxO4 (x = 0–0.2) nanofibers prepared by sol–gel route

CoFe_2−xSm_xO₄ (x = 0–0.2) nanofibers with diameters about 100–300 nm have been prepared using the organic gel-thermal decomposition method. The composition, structure and magnetic properties of the CoFe_2−xSm_xO₄ nanofibers were investigated by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, inductive coupling plasma mass analyzer and vibrating sample magnetometer. The CoFe_2−xSm_xO₄ (x = 0–0.2) nanofibers obtained at 500–700 °C are of a single spinel structure. But, at 800 °C with a relatively high Sm content of 0.15–0.2 the spinel CoFe_2−xSm_xO₄ ferrite is unstable and the second phase of perovskite SmFeO₃ occurs. The crystalline grain sizes of the CoFe_2−xSm_xO₄ nanofibers decrease with Sm contents, while increase with the calcination temperature. This grain reduction effect of the Sm³⁺ ions doping is largely owing to the lattice strain and stress induced by the substitution of Fe³⁺ ions with larger Sm³⁺ ions in the ferrite. The saturation magnetization and coercivity increase with the crystallite size in the range of 8.8–57.3 nm, while decrease with the Sm content from 0 to 0.2 owing to a smaller magnetic moment of Sm³⁺ ions. The perovskite SmFeO₃ in the composite nanofibers may contribute to a high coercivity due to the interface pinning, lattice distortion and stress in the ferrite grain boundary fixing and hindering the domain wall motion.     

Variations of microstructures and electrical properties of Bi4Ti3O12/SrTiO3/(La0.5, Sr0.5)CoO3/MgO epitaxial thin films by annealing

Epitaxial thin films of a heterostructure with Bi₄Ti₃O₁₂(BIT)/SrTiO₃(ST) were successfully grown with a bottom electrode consisting of La_0.5Sr_0.5CoO₃(LSCO) on MgO(001) substrates using pulsed laser deposition. The grown BIT and ST (001) planes were parallel to the growth surface with the orientation relationship of BIT <110>//ST <010>. In the as-deposited film, the BIT (001) plane appeared to expand to relieve a lattice mismatch with the ST (001) plane. However, annealing for 20-40 min induced the BIT (001) plane to contract horizontally with its c-axis expanding, which was associated with a local perturbation in the layer stacking of the BIT structure. This structural distortion was reduced in the film annealed for 1 h, with restoration of the periodicity of the layer stacking. Correspondingly, the dielectric constant of the as-deposited film was increased from 292 to 411 by annealing for 1 h. In parallel, the film was paraelectric but became more ferroelectric, with the remanent polarization and the coercive field changing from 0.1 μC/cm² and 14 kV/cm to 1.7 μC/cm² and 69 kV/cm, respectively.     

Structural, optical and electrical properties of thermally evaporated Ag2S thin films

Thin films of Ag₂S are prepared on glass and quartz substrates by a thermal evaporation method. The structural studies show that the films are well crystallized with an acanthite structure. The optical properties of the films are investigated using spectrophotometric measurements of transmittance and reflectance at normal incidence in the wavelength range 500-2200 nm. The refractive index, n, and the absorption index, k, of Ag₂S are determined from the absolute values of the measured transmittance and reflectance. The dispersion of refractive index in Ag₂S is analyzed using the concept of the single oscillator. Within this concept the oscillator energy, E₀, and the dispersion energy, E_d, can be determined as 5 and 32.5 eV, respectively. It is interesting to note that Ag₂S appears to fall into the ionic class. The values of the lattice dielectric constant and the ratio of the carrier concentration to the effective mass are also determined as 7.77 and 1.7×10⁴⁷ kg⁻¹ m⁻³, respectively. The analysis of the spectral behavior of the absorption coefficient in the intrinsic absorption region reveals an indirect allowed transition with a band gap of 0.96 eV and associated phonons of 0.05 eV. Measurements of the dark electrical resistivity is studied as a function of film thickness and temperature. The dark electrical resistivity decreases with increasing film thickness. Graphical representation of log ρ as a function of reciprocal temperature yields two distinct linear parts indicating the existence of two activation energies ΔE₁ and ΔE₂ as 0.18 and 0.28 eV respectively. Discussion on the obtained results and their comparison with the previous published data is also given.     

Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals

Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe₂ crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0×10¹⁵ and 1.3×10¹⁶ cm⁻³, respectively. A hole and electron effective masses of 0.520m₀ and 0.325m₀, respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17.     

CuIn1 − xAlxSe2 thin films obtained by selenization of evaporated metallic precursor layers

CuIn_1 − xAl_xSe₂ (CIAS) thin films were grown by a two stage process. Cu, In and Al layers were sequentially evaporated and subsequently heated with elemental selenium in a quasi-closed graphite box. Different x values (0 ≤ x ≤ 0.6) were obtained by varying the Al and In precursor layers thicknesses. Selenization conditions such as Se amount provided during the selenization process were adjusted in order to optimize the film properties. Polycrystalline CuIn_1 − xAl_xSe₂ thin films with chalcopyrite structure were obtained. Referred to CuInSe₂ thin films the lattice parameters, the (112) orientation and the average crystallite size decreased and the band gap energy increased with increasing Al content. To optimize structural properties of the CIAS films a higher Se amount was required as the x value increased. The incorporation of Al changed the thin film morphology towards smaller grain sizes and less compact structures.