金粉和玻璃粉对厚膜金导体浆料的性能影响

探讨了不同粒径的球形金粉对金导体浆料烧结膜致密性及方阻的影响，通过对比两种不同性能玻璃粉的软化点及浸润性，来讨论其质量分数的改变对金浆性能的影响。研究结果表明：选取合适粒径范围的金粉，可以提高金浆烧结膜层致密性且降低方阻；当两种玻璃的质量分数分别为w(G1)1.5%和w(G2)0.5%时，金导体浆料的方阻较小，键合拉力最大，老化拉力最好。     

金粉形貌对金导体浆料印刷膜层性能的影响

以氯金酸为原料,研究了抗坏血酸、亚硫酸钠、草酸三种不同的还原剂对金粉形貌的影响。分别以三种金粉为导电填充料配制了适合于丝网印刷的金导体浆料,研究了金粉形貌对浆料印刷膜层性能的影响。结果表明:以明胶为分散剂、草酸为还原剂制备出的金粉所配制浆料的粘度、触变性更适合于丝网印刷工艺,其印刷膜层平整、无缺陷,烧成后膜层附着力和方阻优于抗坏血酸和亚硫酸钠作为还原剂所制备出的金粉。     

一种用于扩散连接的金浆料

研制了一种用于扩散连接的金浆料。这种浆料主要由金粉和有机载体组成。浆料的烧成特性和粘度对扩散连接强度影响较大。金粉的分散性、表面形态和颗粒尺寸会影响浆料的烧成特性和粘度。载体会影响浆料的粘度。金浆料中掺入片状金颗粒能改善扩散连接强度     

一种用于护散连接的金浆料

研制了一种用于扩散连接的金浆料。这种浆料主要由金粉和有机载体组成。浆料的烧成特性和粘度对扩散连接强度影响较大。金粉的分散性、表面形态和颗粒尺寸会影响浆料的烧成特性和粘度。载体会影响浆料的粘度。金浆料中掺入片状金颗粒能改善扩散连接强度。     

亚微米球形金粉的制备与应用

采用化学还原法,以草酸、亚硫酸钠和抗坏血酸(VC)等为还原剂,以PVP(聚乙烯吡咯烷酮)为分散剂还原雷酸金制备了亚微米球形金粉,利用SEM对所制金粉进行了表征。讨论了还原剂种类对金粉形貌的影响,优选出了弱还原性的VC作为制备亚微米球形金粉的还原剂。探讨了金溶液质量浓度、pH值、PVP用量对金粉粒径的影响。结果表明:当金溶液质量浓度为30 g/L,pH值为3.5,质量比ζ(PVP:Au)=0.5:1.0时,所制备的金粉具有规则的球形形貌和约0.3μm的粒径。该金粉制备的金导体浆料具有优良的导电性能。     

类球形金粉粒径对Au-金属化低温共烧陶瓷微观结构 及翘曲度的影响

研究和探讨了低温共烧陶瓷（LTCC）共烧过程中的收缩现象及LTCC陶瓷金属化后翘曲的主要影响因素。采用六种不同平均粒径（0.7~2.3 μm）的类球形金粉、玻璃粉及一种合适的有机载体分别制备成金导体浆料。将制备成的金导体浆料印刷在LTCC 生瓷膜上，按LTCC常规工艺叠层、共烧。分析了不同粒径金粉制备的浆料印刷在瓷片上烧结后的微观结构，测量了各瓷片的翘曲度及各浆料的方阻。实验发现采用大粒径的类球形金粉有利于减小瓷片的翘曲度，但烧结膜层致密性变差，方阻也变大。     

符合RoHS禁令的厚膜金导体浆料

出于对健康和环境的考虑,限制铅、镉和含有其它有毒物质在混合集成电路产品应用的需求越来越大。根据2006年7月1日生效的欧盟禁令(即RoHS)这些物质是禁用的,电路生产商急于找到可以替换现有含铅和镉的产品。镉氧化物在厚膜金浆料中可以起到很好的粘附作用。金厚膜浆料主要用于要求高机械强度的领域,比如医疗器械,军事应用和高频电路。现在的挑战是开发一新的和传统的含镉浆料具有相同性能的无镉导体金浆料。在过去的10年中,贺利氏超前地研发了无铅无镉厚膜产品。到目前,贺利氏已经开发并且打入一些环保型厚膜产品市场。讨论一种新开发的厚膜导体金浆料,给出了在96%氧化铝基板和绝缘体基板上分别焊接金线和铝线的线键合数据。数据显示无铅无镉金导体和RoHS规定的可锡焊导体之间的匹配性,结果表明它可以应用于混合金属电路。     

Cu/TiO_2厚膜浆料用于通孔连接

Cu浆料用于厚膜电路板激光打孔的导体连接,易出现剥落。采用添加体积分数φ为20×10~(-2)金红石型TiO_2的铜浆料使问题得以解决。     

适合铝丝键合后热老化要求的金导体浆料

研究了一种适合铝丝键合后热老化要求的金导体浆料，性能达到使用要求。在金浆中添加了少量合金元素，并选用混合型粘结剂。对金导体铝丝焊后热老化失效机理以及添加合金元素的作用，进行了讨论     

高分散超细金粉制备技术

本文介绍了利用降低还原反应速度提高粉料分散性能的超细金粉制备技术。     

Carbon Nanotube Thermal Pastes for Improving Thermal Contacts

The use of 0.6 vol.% single-walled carbon nanotubes in a poly(ethylene glycol)-based dispersion gave a thermal paste that was as effective as solder for improving thermal contacts. A thermal contact conductance of 20 × 10⁴ W m⁻² K⁻¹ was attained. An excessive amount of nanotubes (e.g. 1.8 vol.%) degraded the performance, because of conformability loss. The nanotubes were more effective than hexagonal boron nitride particles but were less effective than carbon black, which gave a thermal contact conductance of 30 × 10⁴ W m⁻² K⁻¹.     

Sintering behavior of a reactively bonded thick film gold ink

The sintering behavior of thick film reactively bonded Au films was studied using electrical re-sistance measurement and scanning electron microscopy. Isothermal firings were conducted at 350‡ to 850‡C for times up to three hours. The sintering process consists of three portions: 1) Burnoff of the binding resin at 350‡ to 450‡C. 2) A second stage involving neck growth between the gold particles with an activation energy of ∼ 15 Kcal/mole and a time exponent of 5.5 to 6.5 corresponding to surface diffusion control and 3) a third stage of densificat ion by pore annihila-tion and grain growth. The activation energy in stage III of 35–45 Kcal/mole agrees closely with bulk diffusion control. Electrical resistance change appears to be a useful method for studying particularly the initial stages of sintering.     

玻璃基板用电子浆料

钠钙视窗玻璃电气性能与氧化铝陶瓷相当 ,成本低 ,是厚膜基片廉价材料。用 Ru2 Pb2 O6 和 Ru2 Bi2 O7作导电相 ,硼硅酸铅系添加碳酸钠作玻璃料配制的钌系电阻浆料 ,与钠钙玻璃有较好的匹配性。烧成条件 6 0 0℃ ,45 min,峰值温度保温 9min。方阻为 2 0 Ω～ 1MΩ,稳定性良好 ,阻值变化 ΔRS/ RS<1%。     

多层陶瓷电容器端电极银浆料匹配问题的研究

针对多层陶瓷电容器一种自主研发的瓷料的银电极匹配问题,运用扫描电子显微镜分析了端电极烧结后的微观结构,并用能谱仪对其进行成分分析,结合实际的生产实践,找出与该瓷料匹配的银浆料。端电极用银浆由有机载体、玻璃料和银粉等组成。经封端、烘干和烧端形成ML-CC的端电极。实验结果表明:用2#银浆作端电极的MLCC具有附着力高、损耗低等特点,完全能满足该系列MLCC生产线的使用要求。     

Concentrations of native and gold defects in HgCdTe from first principles calculations

We have studied the defect formation energies of the various native (vacancies, interstitials, and antisites) and Au defects in Hg_1−xCd_xTe using density functional-based total energy calculations with ultrasoft pseudo-potentials. These studies are important for infrared (IR) detection technology where the device performance can be severely degraded because of defects. To calculate formation energies, we modeled the neutral and charged defects using supercells containing 64 atoms. From the formation energies, we have determined the defect concentrations as a function of stoichiometry and temperature. We find the prevalent neutral defects to be Au at the Hg site (Au_Hg ), Hg vacancies (V_Hg ), and Te antisites (Te_Hg ). We have also explicitly studied charged defects and have found Te _Hg ²⁺ , Au _Hg ¹⁻ , V _Hg ¹⁻ , V _Hg ²⁻ , and V _Te ²⁺ to have low formation energies. We have identified Au_Hg to be the prevalent Au defect, having concentrations several orders of magnitude greater than the other Au defects. We find that the charge state of V_Hg is primarily (1−) or (2−) depending on the electronic chemical potential.     

Contamination of silicon and oxidized silicon wafers during plasma etching

Neutron activation analysis has been used to study the type and level of contamination of silicon and oxidized silicon wafers exposed to various plasmas used in silicon device processing. Silicon wafers exposed to plasmas in a reactor previously used to remove SiN passivation layers from Au metallized wafers were found to be heavily contaminated with Au (up to ∼10¹⁴ atoms/cm²). Au contamination of oxidized silicon wafers similarly treated was two to three orders of magnitude smaller regardless of whether SiO₂ etched faster or slower than Si in the plasmas used. Wet chemical cleaning of contaminated Si subsequent to plasma exposure was relatively ineffective in removing residual Au. This is interpreted as indicating indiffusion of Au during plasma exposure of Si. Exposure to a polymer forming plasma reduced the level of Au contamination of Si by nearly two orders of magnitude due to effective “sealing” of reactor surfaces by polymer film. Further, the level of contamination of Si was observed to decrease by over two orders of magnitude with usage time of the reactor during a 300-day time period when no Au containing materials were introduced into the reactor.     

用于氮化铝陶瓷基片的电子浆料

研制了用于ＡｌＮ陶瓷基片的导体银浆和电阻浆料。采用低ＰｂＯ含量晶化玻璃料配制银导体浆料，玻璃软化点４３０～４５０℃。电阻浆料采用ＰｂＯ（质量分数小于６％）的晶化玻璃料Ｂ、Ｃ、Ｄ三种，软化点分别为５２０℃、６９０℃、６１０℃。改变ＲｕＯ２与玻璃相的质量比，能控制电阻浆料的方阻值。质量比在５０比５０至１５比８５之间。加入添加剂ＭｎＯ２可改善电阻浆料的ＴＣＲ，阻值在２０Ω／□～１ＭΩ／□范围内，ＴＣＲ绝对值小于２００×１０－６／℃。     

金丝球焊机金丝检测技术

在应用于三极管压焊的全自动金丝球焊机中,金丝检测是确保压焊过程工艺质量的关键技术。通过设计金丝的打火失球检测和第一焊点、第二焊点压焊失败检测电路,实现金丝球焊机的金丝压焊效果自动检测功能。实验证明,所设计的检测电路完全满足压焊工艺质量的要求。