TiN/n-GaAs肖特基势垒特性

本文用俄歇能谱(AES)、电流-电压(I-V)和电容-电压(C-V)电学测量等方法,研究了反应溅射制备的TiN/n-GaAs肖特基势垒特性.经800℃高温热退火后,TiN/n-GaAs势垒具有良好的整流特性和高温稳定性,其势垒高度为0.80cV,理想因子n为1.07.同时还观察到许多有意义的结果:即随着退火温度的升高(从500℃到800℃),TiN/n-GaAs肖特基二极管的势垒高度增大,势垒电容减小和二极管反向击穿电压增大.我们认为这可能与溅射过程中GaAs衬底中掺氮有关,并用Shannon模型(即金属/P-GaAs/n-GaAs结构)解释了以上结果.研究结果表明,在自对准GaAs MESFET工艺中,TiN是一种很有希望的栅材料.     

氮气氛下衬底负偏压预溅射对GaAs肖特基势垒性能的改善

本文研究了不同气氛下衬底负偏压预溅射对GaAs肖特基势垒特性的影响。我们发现,采用氮气氛下衬底负偏压预溅射新工艺能明显改善GaAs肖特基势垒特性:势垒高度增高,势垒电容减小和二极管反向击穿电压增大。这种新工艺对于GaAs肖特基势垒特性改善和GaAs MESFETs性能提高是一个非常有用的技术。     

难熔金属氮化物栅的技术研究

本文采用衬底负偏压溅射方法对比研究了ZrN薄膜及其与GaAs的肖特基势垒特性,结果表明,该法不仅能降低ZrN薄膜电阻率,而且能增高GaAs肖特基势垒高度.文中还用不同剂量的氮离子对GaAs衬底进行注入实验,可以看出,氮注入明显地改善了Ti/n-GaAs肖特基势垒特性.     

ICP刻蚀损伤对n-GaN-Ni/Au肖特基接触特性的影响

通过电流-电压法(I-V),电容-电压法(C-V)对n-GaN材料的ICP(感应耦合等离子体)刻蚀样品和未刻蚀样品上的肖特基势垒二极管的电学特性进行了分析.利用原子力显微镜(AFM)和扫描电镜(SEM)对刻蚀样品的表面形貌,以及退火前后肖特基接触金属的表面形貌变化进行了研究.试验表明,ICP刻蚀会在GaN表面引入损伤,形成电子陷阱能级从而引起肖特基二极管的势垒高度降低,理想因子增大,反向泄漏电流增大.刻蚀样品在400 ℃热退火可以恢复二极管的电特性,退火温度到600 ℃时二极管特性要好于未刻蚀的样品.     

LaB_6/GaAs肖特基势垒研究

用电子束蒸发LaB_6单晶的方法,制备了LaB_6/GsAs肖特基势垒,经800℃高温退火后,势垒高度为0.70eV,理想因子为1.15～1.2。用俄歇能谱观察到LaB_6/GaAs界面有良好的热稳定性,以LaB_6为栅得到了初步的全离子注入的MESFET特性。结果表明,LaB_6有希望用于GaAs集成电路。     

杂质分凝技术对肖特基势垒高度的调制

为降低金属或金属硅化物源漏与沟道的肖特基势垒高度以改善肖特基势垒源漏场效应晶体管(SBSD-MOSFET)的开关电流比(Ion/Ioff),采用硅化诱发杂质分凝技术(SIDS)调节NiSi/n-Si肖特基二极管(NiSi/n-Si SJD)的肖特基势垒高度,系统地研究了SIDS工艺条件如杂质注入剂量、注入能量和硅化物形成工艺对肖特基势垒高度调节的影响。实验结果表明,适当增加BF2杂质的注入剂量或能量均能显著提高有效电子势垒高度(φBn,eff),也即降低了有效空穴势垒高度(φBp,eff),从而减小反向偏置漏电流。同时,与传统的一步退火工艺相比,采用两步退火工艺形成NiSi也有利于提高有效电子势垒高度,减小反向漏电流。最后,提出了一种优化的调制肖特基势垒高度的SIDS工艺条件。     

WN_x/n-GaAs肖特基势垒特性

本文用俄歇能谱、卢瑟福背散射、电流-电压和电容-电压等方法研究了射频磁控反应溅射制备的WN_x/n-GaAs肖特基势垒特性。结果表明,经800℃快速热退火后,WN_x/n-GaAs势垒具有良好的整流特性和高温稳定性,其势垒高度为0.79ev,理想因子为1.19。在自对准GaAs MESFET工艺中,WN_x是一种好的栅材料。     

Mo/4H-SiC肖特基势垒二极管的研制

采用微电子平面工艺,射频溅射Mo作肖特基接触,电子束热蒸发金属Ni作欧姆接触,三级场限环终端表面保护.并通过对Mo接触进行合理的高温退火,不降低理想因子和反向耐压特性情况下,有效控制肖特基势垒高度在1.2～1.3 eV范围内,成功研制出高耐压低损耗Mo/4H-SiC肖特基势垒二极管.其特性测试结果为:击穿电压Vb为3000V,串联导通电阻Ron为9.2mΩ·cm2,Vb2/Ron为978MW/cm2.     

Mo/4H-SiC肖特基势垒二极管的研制

采用微电子平面工艺,射频溅射Mo作肖特基接触,电子束热蒸发金属Ni作欧姆接触,三级场限环终端表面保护.并通过对Mo接触进行合理的高温退火,不降低理想因子和反向耐压特性情况下,有效控制肖特基势垒高度在1.2～1.3 eV范围内,成功研制出高耐压低损耗Mo/4H-SiC肖特基势垒二极管.其特性测试结果为:击穿电压Vb为3000V,串联导通电阻Ron为9.2mΩ·cm2,Vb2/Ron为978MW/cm2.     

深槽Ni(Pt)Si/Si肖特基二极管特性研究

采用15nmNi/1.5nmPt/15nmNi/Si结构在600～850°C范围内经RTP退火的方法形成Ni(Pt)Si薄膜,其薄膜电阻低且均匀一致。比形成较低电阻率的NiSi薄膜的温度提高了150°C。在850°CRTP退火后形成的Ni(Pt)Si/Si肖特基势垒二极管I-V特性很好,其势垒高度ΦB为0.71eV,改善了肖特基二极管的稳定性。实验表明在肖特基二极管中引入深槽结构,可以大幅度地提高其反向击穿电压。在外延层浓度为5E15cm-3时,深槽器件的击穿电压可以达到80V,比保护环器件高约30V。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks