Microwave Dielectric Properties of Low-Fired ZnNb2O6 Ceramics with BiVO4 Addition

The BiVO₄ additive was found effective for low-temperature firing of ZnNb₂O₆ polycrystalline ceramics below 950°C in air without a serious degradation in their microwave dielectric properties. Dense BiVO₄-doped ZnNb₂O₆ samples of a relative sintered density over 95% could be prepared even at 925°C. An optimally processed specimen exhibited excellent microwave dielectric properties of Q · f = 55000 GHz, ɛ_r= 26, and τ_f=−57 ppm/°C. With increasing BiVO₄ addition up to 20 mol% relative to ZnNb₂O₆, while the quality factor Q · f was gradually decreased, the relative dielectric constant, ɛ_r, was linearly increased and the temperature coefficient of resonant frequency, τ_f, was slightly increased. The variations in Q · f and ɛ_r are surely attributable to the residual BiVO₄ in the ZnNb₂O₆ matrix. An unexpected slight increase in τ_f is probably due to the formation of the Bi(V,Nb)O₄-type solid solution.     

Mechanical Properties of Partially Dense Alumina Produced from Powder Compacts

The elastic modulus ( E ), the critical strain energy release rate ( G _c), and the flexural strength (σ) have been determined for two partially dense alumina bodies produced from the same powder but with different initial densities. The mechanical properties were measured for specimens fabricated at four different relative densities. The measured elastic modulus, critical strain energy release rate, and a calculated critical stress intensity factor ( K _c) were observed to be linearly related to (ρ–ρ₀)/(1 –ρ₀), where ρ is the current relative density and ρ₀ is the initial relative density of the powder compact. With the observed linear relations for E, G _c (or K _c), and the assumption that the crack length responsible for failure was present in the initial powder compact and shrunk in proportion to the relative density change, a Griffith equation was constructed to estimate the strength at any relative density. This relation was in good agreement with measurements.     

Reduced Dielectric Loss of Modified ZnNb2O6 Ceramics by Substituting Nb5+ with Ta5+

The effects of substituting Nb⁵⁺ with Ta⁵⁺ on the microwave dielectric properties of the ZnNb₂O₆ ceramics were investigated in this study. The forming of Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution was confirmed by the measured lattice parameters and the EDX analysis. By increasing x , not only could the Q × f of the Zn(Nb_{1− x} Ta _x )₂O₆ ( x =0–0.09) solid solution be tremendously boosted from 83 600 GHz at x =0 to a maximum 152 000 GHz at x =0.05, the highest ɛ_r∼24.6 could also be achieved simultaneously. It was mainly due to the uniform grain morphology and the highest relative density of the specimen. A fine combination of microwave dielectric properties (ɛ_r∼24.6, Q × f ∼152 000 GHz at 8.83 GHz, τ_f∼–71.1 ppm/°C) was achieved for Zn(Nb_0.95Ta_0.05)₂O₆ solid solution sintered at 1175°C for 2 h.     

Microwave Dielectric Properties of CaTiO3-Ca(Al1/2Ta1/2)O3 Ceramics

The microwave dielectric properties of CaTi_1-χ(Al_1/2Ta_1/2)_cHO₃ solid solutions (0.3 ≤χ≤ 0.5) have been investigated. The ceramic samples had perovskite structures similar to CaTiO₃. The partial substitution of Ti₄₊ by a coupled Al₃₊/Ta_s+ permitted improvement of the quality factor Q . The dielectric constant (τ_r) and temperature coefficient of resonant frequency (τ_r) decrease rapidly with an increase of χ. A new high-quality microwave dielectric material was found at χ= 0.46 with σ_r= 46.5, Q f = 27300 GHz, and π_f= 0 ppm/°C. The relationship between microstructures and dielectric properties is presented.     

Structure–Property Relations in xBaTiO3–(1−x)La(Mg1/2Ti1/2)O3 Solid Solutions

The microwave dielectric properties and microstructures of compounds in the solid solution series x BaTiO₃–(1− x )La(Mg_1/2Ti_1/2)O₃ (BTLMT) have been investigated. The structural phase transitions that occur as a function of x have been studied and are related to changes in the dielectric properties. For compounds where x ≤ 0.1, X-ray diffraction (XRD) showed evidence of 1:1 ordering between Mg and Ti cations. For x ≤ 0.3, XRD and electron diffraction revealed that compounds were tilted in both antiphase and in-phase. However, for 0.3 < x < 0.7, only antiphase tilting was present. The temperature coefficient of resonant frequency (τ_f) vs the relative permittivity (ɛ_r) was linear until x = 0.5 at which point in the solid solution the transition to a nontilted structure resulted in nonlinear behavior. τ_f values close to zero (−2 ppm/°C) were achieved at x = 0.5 (ɛ_r∼ 60), which had a quality factor ( Q · f _o) of 9600 GHz.     

Effect of Cation Substitution and Non-Stoichiometry on the Microwave Dielectric Properties of Sr(B'0.5Ta0.5)O3 [B'=Lanthanides] Perovskites

The Sr(B'_0.5Ta_0.5)O₃ ceramics where B'=La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Er, and Yb have been prepared by the conventional solid-state ceramic route and their microwave dielectric properties have been investigated. The structure and microstructure of the ceramics have been characterized by X-ray diffraction and scanning electron microscope techniques. The relative permittiviy (ɛ_r) varies linearly with B'-site ionic radii, except for La, and the temperature coefficient of resonant frequency (τ_f) varies linearly with the tolerance factor. The Sr(B'_0.5Ta_0.5)O₃ ceramics have ɛ_r in the range 25.9–32, Q _u× f =4500–54 300 GHz, and τ_f=−79 to −42 ppm/°C. A slight deviation from stoichiometry affects the dielectric properties of these double perovskites. Partial substitution of Ba for Sr could tune the dielectric properties. Addition of rutile (TiO₂) lowered the sintering temperature and improved the dielectric properties of Sr(B'_0.5Ta_0.5)O₃ ceramics.     

The Effect of Dopants on the Dielectric Properties of Ba(B'1/2Ta1/2)O3 (B'=La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb, and In) Microwave Ceramics

Low-loss dielectric ceramics based on Ba(B'_1/2Ta_1/2)O₃ (B'=La, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Y, Yb, and In) complex perovskites have been prepared by the solid-state ceramic route. The dielectric properties (ɛ_r, Q _u, and τ_f) of the ceramics have been measured in the frequency range 4–6 GHz by the resonance method. The resonators have a relatively high dielectric constant and high quality factor. Most of the compounds have a low coefficient of temperature variation of the resonant frequencies. The microwave dielectric properties have been improved by the addition of dopants and by solid solution formation. The solid solution Ba[(Y_{1− x} Pr _x )_1/2Ta_1/2]O₃ has x =0.15, with ɛ_r=33.2, Q _u× f =51,500 GHz, and τ_f≈0. The microwave dielectric properties of Ba(B'_1/2Ta_1/2)O₃ ceramics are found to depend on the tolerance factor ( t ), ionic radius, and ionization energy.     

Low-Loss Microwave Dielectrics Using Mg2(Ti1−xSnx)O4 (x=0.01–0.09) Solid Solution

Low-loss ceramics having the chemical formula Mg₂(Ti_{1− x} Sn _x )O₄ for x ranging from 0.01 to 0.09 have been prepared by the conventional mixed oxide route and their microwave dielectric properties have been investigated. X-ray powder diffraction patterns indicate the corundum-structured solid solutions for the prepared compounds. In addition, lattice parameters, which linearly increase from 8.4414 to 8.4441 Å with the rise of x from 0.01 to 0.09, also confirm the forming of solid solutions. By increasing x from 0.01 to 0.05, the Q × f of the specimen can be tremendously boosted from 173 000 GHz to a maximum 318 000 GHz. A fine combination of microwave dielectric properties (ɛ_r∼15.57, Q × f ∼318 000 GHz at 10.8 GHz, τ_f∼−45.1 ppm/°C) was achieved for Mg₂(Ti_0.95Sn_0.05)O₄ ceramics sintered at 1390°C for 4 h. Ilmenite-structured Mg(Ti_0.95Sn_0.05)O₃ (ɛ_r∼16.67, Q × f ∼275 000 GHz at 10.3 GHz, τ_f∼−53.2 ppm/°C) was detected as a second phase. The presence of the second phase, however, would cause no significant variation in the dielectric properties of the specimen, because the second phase properties are very similar to the primary phase. These unique properties, in particular, low ɛ_r and high Q × f , can be utilized as a very promising dielectric material for ultra-high-frequency applications.     

Preparation and Dielectric Properties of Low-Temperature-Sinterable (Zr0.8Sn0.2)TiO4 Powder

Low-temperature-sinterable (Zr_0.8Sn_0.2)TiO₄ powders were prepared using 3 mol% Zn(NO₃)₂ additive and then compared with powders prepared using 3 mol% ZnO additive and no additives. Sintering at 1200°C for 2 h produced a dielectric ceramic with ρ= 98.6% of theoretical density (TD), ɛ_r= 38.4, Q × f (GHz) = 42000, and τ _f =−1 ppm/°C. Sintering at 1250°C resulted in an excellent dielectric with ρ= 99% of TD, epsilon_r= 40.9, Q × f (GHz) = 49000, and τ _f =−2 ppm/°C. Scanning electron microscopy showed a microstructure with grains measuring 0.5 to 1 μm, and transmission electron microscopy revealed secondary phase in the grain boundaries.     

BiNbO4-Based Glass–Ceramic Composites for Microwave Applications

The effect of a bespoke glass sintering aid, 0.3Bi₂O₃–0.3Nb₂O₅–0.3B₂O₃–0.1SiO₂ (BN1), developed from the base ceramic composition, BiNbO₄ (BN), on the sinterability, microstructure, and microwave (MW) dielectric properties of BN ceramics has been investigated. Densities >97% theoretical could be achieved at 1020°C for samples with up to 15% BN1 additions. The resulting microstructure was composed of BN laths surrounded by a residual glass phase that contained small fibrous crystals. Some evidence of dissolution of BN crystals was observed. Optimum properties were exhibited for samples with 15 wt% of glass addition sintered for 4 h at 1020°C with a relative permittivity ɛ_r=38, a MW quality factor Q × f ₀=17 353 at 5.6 GHz, and a temperature coefficient of resonant frequency τ_f=−10 ppm/°C. The high Q × f ₀, ɛ_r, and low τ_f, coupled with a relatively low sintering temperature, suggest that the use of bespoke glass sintering aids of this type may have great potential for the fabrication of MW ceramics.     

Microwave Dielectric Properties of Low-Fired Ba5Nb4O15

The effect of B₂O₃ on the sintering temperature and microwave dielectric properties of Ba₅Nb₄O₁₅ has been investigated using X-ray powder diffraction, scanning electron microscopy, and a network analyzer. Interactions between Ba₅Nb₄O₁₅ and B₂O₃ led to formation of second phases, BaNb₂O₆ and BaB₂O₄. The addition of B₂O₃ to Ba₅Nb₄O₁₅ resulted in lowering the sintering temperature from 1400° to 925°C. Low-fired Ba₅Nb₄O₁₅ could be interpreted by measuring changes in the quality factor ( Q × f ), the relative dielectric constant (ɛ_r), and the temperature coefficient of resonant frequency (τ_f) as a function of B₂O₃ additions. More importantly, the formation of BaNb₂O₆ provided temperature compensation. The microwave dielectric properties of low-fired Ba₅Nb₄O₁₅ had good dielectric properties: Q × f = 18700 GHz, ɛ_r= 39, and τ_f= 0 ppm/°C.     

Dielectric Properties of (1−x)CaTiO3–xCa(Zn1/3Nb2/3)O3 Ceramic System at Microwave Frequency

The microwave dielectric properties of the (1− x )CaTiO₃– x Ca(Zn_1/3Nb_2/3)O₃ ceramic system have been investigated. The ceramic samples sintered at 1300°–1450°C for 4 h in air exhibit orthorhombic pervoskite and form a complete solid solution for different x value. When the x value increased from 0.2 to 0.8, the permittivity ɛ_r decreased from 115 to 42, the unloaded quality factor Q × f increased from 5030 to 13 030 GHz, and the temperature coefficient τ_f decreased from 336 to −28 ppm/°C. When x =0.7, the best combination of dielectric properties, a near zero temperature coefficient of resonant frequency of τ_f∼−6 ppm/°C, Q × f ∼10 860 GHz and ɛ_r∼51 is obtained.     

Dielectric Properties of the "Twinned" 8H-Hexagonal Perovskite Ba8Nb4Ti3O24

The dielectric properties of dense ceramics of the "twinned" 8H-hexagonal perovskite Ba₈Nb₄Ti₃O₂₄ are reported. Single-phase powders were obtained from the mixed-oxide route at 1325°C and ceramics (>92% of the theoretical X-ray density) by sintering in air or flowing O₂ at 1400°–1450°C. The ceramics are dc insulators with a band gap >3.4 eV that resonate at microwave frequencies with relative permittivity, ɛ_r∼44–48, quality factor, Q × f _r∼21 000–23 500 GHz (at f _r∼5.5 GHz) and temperature coefficient of resonant frequency, TC _f,∼+115 ppm/K.     

Microwave Dielectric Properties of Hexagonal 12R-Ba3LaNb3O12 Ceramics

The dielectric properties of dense ceramics of the n =0 member of a newly identified homologous series Ba_{3+ n} LaNb₃Ti _n O_{12+3 n} , where n =0, 1, and 2, are reported. Single-phase powders can be obtained from the mixed-oxide route at 1350°C and dense ceramics (>97% of the theoretical X-ray density) with uniform microstructures (3–5 μm) can be obtained by sintering in air at 1500°C. The ceramics are excellent dc insulators with a band gap >2.6 eV that resonate at microwave frequencies with a relative permittivity, ɛ_r∼44, a quality factor, Q × f _r, of ∼9000 at f _r∼5.5 GHz and a temperature coefficient of resonant frequency, TC_f,∼−100 ppm/K.     

Crystal Structure and Dielectric Properties of LaYbO3

The crystal structure and dielectric properties of LaYbO₃ ceramics prepared by the mixed-oxide route have been investigated. Rietveld refinements performed on X-ray and neutron diffraction data show the room-temperature structure to be best described by the orthorhombic Pnma space group [ a =6.02628(9) Å, b =8.39857(11) Å, and c =5.82717(7) Å; Z =4, and theoretical density, D _x =8.1 g/cm³] in agreement with electron diffraction experiments. LaYbO₃ ceramics fired at 1600°C for 4 h attain ∼97% of D _x and their microstructures consist of randomly distributed equiaxed grains with an average size of ∼8 μm. Conventional transmission electron microscopy shows densification to occur in the absence of a liquid phase and reveals domain-free grains. The relative permittivity, ɛ_r, of LaYbO₃ ceramics at radio frequencies is ∼26 in the range ∼10–300 K; however, a small dielectric anomaly is detected at ∼15 K. At room temperature and microwave frequencies, LaYbO₃ ceramics exhibit ɛ_r∼26, Q × f _r∼20 613 GHz (at 7 GHz), and τ_f∼−22 ppm/K. Q × f _r show complex subambient behavior, decreasing from a plateau value of ∼20 000 GHz between ∼300 and 200 K to a second plateau value of ∼6000 GHz at ∼90 K before decreasing to <1000 GHz at ∼10 K. The large decrease in Q × f _r at low temperature may be related to the onset of antiferromagnetism at ∼2.7 K. ¹     

Evaluation and Statistical Analysis of Dielectric Permittivity of BaTiO3 Powders

A slurry method was used to determine the dielectric permittivity (ɛ_r) of BaTiO₃ powders with different characteristics, such as tetragonality ( c / a ratio), density, particle size, and specific surface area. The ɛ_r of powders highly depended on their characteristics. In order to extract the effect of each characteristic, a statistical analysis was carried out to represent the ɛ_r of powders with an empirical formula. A fairly good agreement was obtained between observed data and those estimated from the formula. The ɛ_r decreased with particle size because of the size effect of BaTiO₃ and high tetragonality and density was essential to obtain high ɛ_r of powders.     

Sintering Behavior and Dielectric Properties of Bi3NbO7 Ceramics Prepared by Mixed Oxides and High-Energy Ball-Milling Methods

The sintering behavior and dielectric properties of Bi₃NbO₇ ceramics prepared by the high-energy ball milling (HEM) method and conventional mixed oxides method with V₂O₅ addition were investigated. All the samples were sintered between 840° and 960°C. For the ceramics prepared by the mixed oxides method, the pure tetragonal Bi₃NbO₇ phase formed without any cubic phase. With changing sintering temperature, the dielectric constant ɛ_r lies between 79 and 92, while the Q × f values are between 300 and 640 GHz. The samples sintered at 870°C have the best microwave dielectric properties with ɛ_r=79, Q × f =640 GHz, and the temperature coefficients of resonant frequency τ_f between 0 and −20 ppm/°C. For the ceramics prepared by the HEM, a pure cubic phase was obtained. The ɛ_r changes between 78 and 80 and Q × f were between 200 and 290 GHz.     

Dielectric Characteristics of Nd(Zn1/2Ti1/2)O3 Ceramics at Microwave Frequencies

The microwave dielectric properties and the microstructures of Nd(Zn_1/2Ti_1/2)O₃ (NZT) ceramics prepared by the conventional solid-state route have been studied. The prepared NZT exhibited a mixture of Zn and Ti showing 1:1 order in the B-site. The dielectric constant values (ɛ_r) saturated at 29.1–31.6. The quality factor ( Q × f ) values of 56 700–170 000 (at 8.5 GHz) can be obtained when the sintering temperatures are in the range of 1300°–1420°C. The temperature coefficient of resonant frequency τ_f was not sensitive to the sintering temperature. The ɛ _r value of 31.6, the Q × f value of 170 000 (at 8.5 GHz), and the τ_f value of −42 ppm/°C were obtained for NZT ceramics sintering at 1330°C for 4 h. For applications of high selective microwave ceramic resonators, filters, and antennas, NZT is proposed as a suitable material candidate.     

Synthesis of Y-Doped BaTiO3–(Bi1/2K1/2)TiO3 Lead-Free Positive Temperature Coefficient of Resistivity Ceramics and Their PTC Effects

As a lead-free positive temperature coefficient of resistivity (PTCR) material, (1– x mol%) BaTiO₃– x mol% (Bi_1/2K_1/2) TiO₃– y mol% Y₂O₃–0.5 mol% TiO₂ (BT– x BKT–2 y Y–0.5TiO₂) systems were prepared by the conventional solid-state reaction method. All samples containing <2 mol% BKT sintered in air possessed relatively low room-temperature resistivity (ρ₂₅) and high positive temperature coefficient (PTC) effect. However, when the BKT content exceeded 2 mol%, the sample was not semiconductive after sintering in air. The effects of sintering schedule on the properties of PTCR ceramics were discussed. The results showed that the optimum composition of BT–1BKT–0.2Y–0.5TiO₂, sintered at 1330°C for not-soaking and then fast quenched in air, achieved rather low ρ₂₅ of 28 Ω·cm and a high jump of resistivity (maximum resistivity [ρ_max]/minimum resistivity [ρ_min]) of 4.0 orders of magnitude with T _c about 155°C. The ρ₂₅ of the as-sintered sample could be further reduced to about 10 Ω·cm by annealing in N₂ at 450°C for 30 min, accompanied decrease on the PTC effect.     

Microwave Characteristics of BaO-TiO2 Ceramics Prepared via a Citrate Route

Microwave dielectrics of the TiO₂-rich BaO-TiO₂ system (BaTi₄O₉ and Ba₂Ti₉O₂₀) were prepared by the citrate route. Pure and well-crystallized BaTi₄O₉ and Ba₂Ti₉O₂₀ particles of nanometer size (30–50 nm) could be obtained by thermal decomposition of citrate gel precursors. After sintering at 1200°–1350°C (for 2–10 h), dense compounds with >90% of theoretical density could be obtained. Dielectric properties of disk-shaped sintered specimens, in the microwave frequency region, were measured in the TE_01δ mode. They were found to have excellent microwave characteristics: for BaTi₄O₉, ε_r= 36, Q = 4900 at 10.3 GHz, and τ_f= 16 ppm/°C; and for Ba₂Ti₉O₂₀, ε_r= 37, Q = 5300 at 10.7 GHz, and τ_f=−6.0 ppm/°C.