光电材料动态自动光谱测试仪的研究与应用

智能式光电材料动态自动光谱测试仪已在实验室研制成功。该仪器不但能用于夜视器件与材料的光谱响应响应测试，。而且能通过光纤传输光束，解决夜视器件稆的光谱响应监控测试。除此之餐，该仪器还可用于０．４－１．５μｍ范围光学材料光透射比测试。配置紫外光源，还可用地紫外光电发射材料光谱响应测试。配制３００／ｍｍ，１００／ｍｍ光栅与红外光源，可解决热成像器件的光谱响应测试问题。     

复合型Si光电发射材料

采用碱锑化合物的镀制与铯氧激活可制备复合型Ｓｉ光电发射材料（Ｓｉ－Ｎａ＿２Ｓｂ－Ｃｓ）－Ｏ－Ｃｓ，（Ｓｉ－Ｋ＿３Ｓｂ－Ｃｓ）－Ｏ－Ｃｓ，（Ｓｉ－Ｃｓ＿３Ｓｂ－·Ｃｓ）－Ｏ－Ｃｓ和（Ｓｉ－Ｎａ＿２ＫＳｂ－Ｃｓ）－Ｏ－Ｃｓ，其最高灵敏度分别可达９５０，１０５０，１５０和２０００μＡ／１ｍ，其最低逸出功分别已达１．０，０．９，０．８５和０．９ｅＶ。比较了复合型Ｓｉ光电发射材料与Ｓｉ和Ｎａ＿２ＫＳｂ（Ｃｓ）光电材料的一些性能参数，提出了复合型Ｓｉ光电材料的表面原子模型；讨论了复合型Ｓ光电材料的光电发射过程并分析了碱锑过渡层的作用。     

光电材料动态自动光谱测试仪的研究与应用

智能式光电材料动态自动光谱测试仪已在实验室研制成功。该仪器不但能用于夜视器件与材料的光谱响应测试，而且能通过光纤传输光束，解决夜视器件与材料研制过程中的光谱响应监控测试。除此之外，该仪器还可用于0．4～1．5μm范围光学材料光透射比测试。配置紫外光源，还可用于紫外光电发射材料光谱响应测试。配制300／mm，100／mm光栅与红外光源，可解决热成像器件的光谱响应测试问题。     

逸出功测试与GaAs光电发射材料的激活

采用铯氧多次交替激活可获得积分灵敏度高达１７００μＡ／ｌｍ、逸出功低至１．２～１．３ｅＶ的负电子亲和势ＧａＡｓ光电发射材料。本文介绍了ＧａＡｓ光电材料的激活系统及其逸出功测试系统，叙述了艳氧多次交替激活工艺，给出了激活过程中灵敏度与逸出功的变化曲线，分析了ＧａＡｓ光电材料导带上内光电子波函数的透射系数与逸出功之间的关系，最后讨论了逸出功测试在高性能ＧａＡｓ光电材料制备过程中的作用。     

4-N,N-二苯胺基均二苯乙烯的合成及光电性能研究

合成了化合物4-N。N-二苯胺基均二苯乙烯。通过红外光谱、核磁共振谱、质谱等手段确证了所合成化合物的结构。用紫外光谱、荧光光谱、循环伏安法(CV)、微分脉冲伏安法(DPV)测试了其光电性能,解析了其电化学行为。计算出DPAS的带隙Eg(opt．)为2．88eV,电离势为5．86eV,电子亲和势为2．98eV。结果表明该化合物是优良的空穴高效注入和传输的蓝色有机电致发光材料。     

硅光电探测器光谱响应度测量标准装置

本文介绍了硅光电探测器光谱响应度测量的原理和装置，描述了相对和绝对光谱响应度标定方法，详细分析了引起标定误差的因素和误差合成，简要分析了国际比对结果。本装置的波长范围为３００￣１０００ｎｍ，相对光谱响应的不确定度（１σ）为０．２１％￣０．８６％，绝对光谱响应的不确定度（１σ）为０．２５％￣０．８７％。     

MoS2/ZnO异质结及其在光电探测器中的研究进展

以MoS₂为代表的过渡金属硫族化合物(TMDCs)由于独特的电子结构、优异的半导体特性、可调节的带隙(1.3～1.8eV)、高迁移率和强光-物质相互作用成为发展下一代高性能光电器件的理想候选材料。然而二维材料独特的层间范德华间隙，使得扩散、注入等传统半导体的掺杂手段无法实现均匀稳定的掺杂，进而无法有效调控其相关电子器件的性能。传统的基于三维半导体的p-n结是现代电子器件的基本组成部分，将二维层状MoS₂集成到传统的半导体材料上成了提升器件性能和探索新功能的策略之一。宽禁带半导体ZnO以其优越的光电性能已广泛应用于高效率短波长探测、发光和激光器件以及智能设备上。近年来，MoS₂和ZnO组成异质结结构的研究成了热点，诸多研究报道MoS₂与ZnO组成的异质结结构可以提高光电探测器的光响应率、光谱范围和光响应速度等，展示了良好的性能。本文综述了MoS₂/ZnO异质结结构的多种制备方法，异质结特性和界面物理机制以及在光电探测器中的研究进展。     

CIS太阳电池材料的研究进展

综述了国内外太阳电池及其材料的发展概况.目前应用的光电转换材料主要有硅材料和化合物半导体材料,介绍了用这几类材料制作的太阳电池的特点,重点介绍了其光电转换效率.在薄膜电池材料中重点综述了铜铟硒(CIS)基薄膜太阳电池的研究进展.由于制约太阳电池发展的关键问题是制备成本高和转换效率低,提出了采用化学法制备CIS基薄膜材料及其梯度带隙,该方法将开辟高性能CIS基吸收层薄膜材料及其器件制备的低成本新途径.     

SiGe/Si异质结光电器件

SiGe/Si异质结光电器件及其光电集成(OEIC)是硅基光电研究的一个非常引人注目的领域.综述了SiGe/Si异质结材料的基本性质,SiGe/Si异质结光电器件的结构、性能、应用及其光电集成.重点介绍了SiGe/Si光电探测器及其与其他相关器件的集成.     

卟啉类光电功能材料的研究进展

卟啉及其衍生物是一类具有优良的光电性能的有机半导体材料．引起人们广泛的关注。本文对卟啉类光电材料在模拟生物光合作用中心的光致电荷转移和能量转移，有机太阳能电池．分子光电器件。有机电致发光和光存储等领域的研究进展做一简要介绍。     

导热有机硅封装胶的研究进展

根据导热有机硅封装胶的研发要求,着重介绍了近年来国内外为提高导热有机硅封装胶的耐老化性、导热性、力学性能等方面的最新研究成果,并对有机硅封装胶研发过程中的难点进行了分析,认为寻求高导热填料以及开发新型耐高温有机硅基体材料是导热有机硅封装胶的研发关键.     

Size and oxygen passivation induced reversal of photoconducting behaviour in CdS nanorods

The effect of oxygen adsorption and desorption on the photoconducting gain, spectral dependence of quantum efficiency and optical switching was studied in CdS nanorods with diameters of 20, 50 and 100?nm. These were found to have an increasing degree of crystallinity and consequently a decreasing overall density of defects leading to better stoichiometry being maintained. These properties, along with the complete depletion of electrons from the nanorod volume and oxygen induced passivation of defects, resulted in: (i)?a large difference in photoconducting gain, (ii)?reversal of the photoconducting behaviour on annealing in oxygen and a vacuum, and (iii) onset of an absorption edge in the spectral dependence of quantum efficiency on oxygen annealing in 20?nm diameter nanorods in comparison to the normal photoconducting behaviour expected from an n-type semiconductor observed in 50 and 100?nm diameter nanorods. Single CdS nanorod devices show stable I-V characteristics in dark and light conditions under a wide temperature range and the effect of oxygen and vacuum annealing can be clearly observed. The oxygen induced defect passivation observed in this study is important for the application of compound semiconductor nanorods in optoelectronic devices.     

On the increase in the charge carrier mobility in fullerene-containing conjugated organic systems

The effect of fullerenes C₆₀ and C₇₀ on the mobility of charge carriers in conjugated organic systems are studied. It was established that the carrier mobility in photoconducting fullerene-containing polyimide films exhibits a tenfold increase as compared to fullerene-free polymer films. A correlation between fullerene-induced changes in the spectral and photoconducting properties of these films is considered.     

Characterization of a-Si:H thin films prepared by dc glow discharge of silane

A dc glow discharge apparatus for preparing amorphous silicon films from silane gas is described. The films are characterized by electron microscopy, infrared spectroscopy, electrical conductivity and photoconductivity. The deposition parameters which give good photoconducting films are established. The Staebler-Wronski effect is studied and is found to be smaller in vacuum than in air. A photovoltage is observed in structures with gold as the Schottkybarrier metal. The conversion efficiency of the device is about 1%. The results are compared with those in the literature, and the improvements which might result in a better conversion efficiency are pointed out.     

酞菁类化合物在光导材料方面的应用

介绍了可作为有机光导材料的酚菁类化合物及其光电导性能。     

Photoconducting properties of a unit nanostructure of ZnO assembled between microelectrodes

The photoconducting properties of a unit microflower of zinc oxide are investigated as a function of wavelength from UV to IR region at constant illumination intensity. Synthesized flowers were trapped in 2 microm gap, between pre-prepared gold microelectrodes, using AC dielectrophoresis. Photocurrent drastically increases upon illumination in the UV region, whereas it gradually reduces when irradiated in visible and IR region. Higher photoconductivity in UV region is correlated to band to band transition upon illumination. In visible region, deep level transitions are expected which intern exhibits comparatively low photocurrent. Photoconduction in IR region is only due to the adsorbed surface oxygen species. This investigation suggests the potential application of ZnO nanostructures for various optoelectronic device applications.     

Improved host material design for phosphorescent guest-host systems

A series of proposed carbazole-based compounds are studied as host materials in an iridium phosphor-based guest-host organic light-emitting diode. Semi-empirical calculations are performed on each compound to predict its efficacy as a host material, and these theoretical predictions are compared to device performance for each compound, in an attempt to verify the model.     

Structural and impedance properties of KBa2V5O15 ceramics

The polycrystalline sample of KBa₂V₅O₁₅ ceramics was prepared by a mixed oxide method at low temperature (i.e., at 560 °C). The formation of the compound was confirmed using an X-ray diffraction technique at room temperature. Scanning electron micrograph of the material showed uniform grain distribution on the surface of the sample. Detailed studies of dielectric properties of the compound as a function of temperature at different frequencies suggest that the compound has a dielectric anomaly of ferroelectric to paraelectric type at 323 °C, and exhibits diffuse phase transition. Electrical properties of the material were analyzed using a complex impedance technique. The Nyquists plot showed the presence of both grain (>10³ Hz) and the grain boundary (<10³ Hz) effects in the material. Studies of electrical conductivity over a wide temperature range suggest that the compound exhibits the negative temperature coefficient of resistance behavior. The ac conductivity spectrum was found to obey Jonscher's universal power law.     

An Ultraviolet Thermally Activated Delayed Fluorescence OLED with Total External Quantum Efficiency over 9%

Owing to the difficulty in acquiring compounds with combined high energy bandgaps and lower-lying intramolecular charge-transfer excited states, the development of ultraviolet (UV) thermally activated delayed fluorescence (TADF) materials is quite challenging. Herein, through interlocking of the diphenylsulfone (PS) acceptor unit of a reported deep-blue TADF emitter (CZ-PS) by a dimethylmethylene bridge, CZ-MPS, a UV-emissive TADF compound bearing a shallower LUMO energy level and a more rigid structure than those of CZ-PS is achieved. This represents the first example of a UV-emissive TADF compound. Organic light-emitting diode (OLED) using CZ-MPS as the guest material can emit efficient UV light with emission maximum of 389 nm and maximum total external quantum efficiency (EQE_max) of 9.3%. Note that this EQE_max value is twice as high as the current record EQE_max (4.6%) for UV-OLEDs. This finding may shed light on the molecular design strategy for high-performance UV-OLED materials.     

以SA为空穴传输层的双层结构电致发光

合在了高荧光量子效率的荧光谱化合物ＦＹ和空穴传输材料的ＳＡ，制备了ＳＡ为空穴传输层，ＦＹ为发光层的双层结构电致发光器件，得到了在１２Ｖ正向电压下的绿色发光，峰值波长为５２５ｎｍ，器件的电流密度为９１ｍＡ／ｃｍ＾２，发光亮度为８０ｃｄｍ＾２。