改性纳米SiO2对PVdF-HFP膜形态和性能影响的研究

利用不同硅烷偶联剂改性纳米SiO2,并将改性物分别加入聚(偏氟乙烯-六氟丙烯)共聚物(PVdF-HFP)溶液中,制备成锂离子电池隔膜。FT-IR和TGA测试表明,偶联剂已成功接枝到纳米SiO2表面;SEM、拉伸、热收缩和交流阻抗测试结果显示,电池隔膜中纳米SiO2的分散性、膜的机械强度、热收缩及电导率都有明显的改善;电化学测试结果表明,含改性纳米SiO2的PVdF-HFP电池隔膜的放电比容量和循环稳定性均比含未改性纳米SiO2的电池隔膜有所提高,尤其是含γ-(甲基丙烯酰氧)丙基三甲氧基硅烷(KH570)改性SiO2的PVdF-HFP电池隔膜,各项性能均有较大的提高,其拉伸强度可达8.63MPa,离子电导率高达1.53×10-3 S/cm,放电比容量在充放电循环100次以内一直保持在142mAh/g以上。     

PVDF-HFP基复合多孔聚合物电解质膜的研制

聚偏氟乙烯-六氟丙烯共聚物(PVDF-HFP)多微孔膜在锂离子电池领域中具有很好的应用前景.采用Bellcore制膜法,用纳米材料对PVDF-HFP为基质的聚合物微孔膜材料进行了改性.利用XRD,SEM,交流阻抗等测试手段对电解质膜的晶体结构、微观形貌、电化学性能等进行了表征.结果表明:改性后聚合物电解质膜的孔隙率增加、结晶度降低,PVDF-HFP/SiO2和PVDF-HFP/Al2O3聚合物电解质隔膜的电导率(20℃)分别达到2.762×10-3S/cm和3.517×10-3S/cm,相应的离子迁移数分别为0.80和0.82.     

添加无机粒子的P(VDF-HFP)-PMMA复合聚合物电解质的性能

研究了以PP/PE/PP(聚丙烯/聚乙烯/聚丙烯)膜为支撑体,P(VDF-HFP)(聚(偏二氟乙烯-六氟丙烯))-PMMA(聚甲基丙烯酸甲酯)为聚合物基体,与纳米级SiO2、CaCO3进行复合构成的聚合物电解质膜(CPE)的性能。借助X射线衍射、电化学阻抗、电池的首次充放电、倍率放电和充放电循环测试,考察了复合聚合物电解质CPE(SiO2)和CPE(CaCO3)的结构以及它们与LiFePO4正极材料、金属锂的相容性。结果表明:无机粒子的加入没有改变原来聚合物P(VDF-HFP)-PMMA非晶结构;两种电解质构成的电池的首次充放电性能相差不大,但是循环性能后者优于前者;LiFePO4/CPE(CaCO3)/Li构成的电池的倍率放电性能、放电容量和容量保持率均优于LiFePO4/CPE(SiO2)/Li电池;CPE(CaCO3)与LiFePO4、金属锂的相容性更好。     

PVDF-HFP/LLTO复合锂离子电池隔膜的电化学性能研究

通过溶剂热合成法合成了平均粒径为69.4nm的钙钛矿型快锂离子导体-钛酸镧锂(LLTO),以聚偏氟乙烯-六氟丙烯(PVDF-HFP)为基体材料,掺杂不同含量的LLTO纳米颗粒,利用静电纺丝法制备PVDF-HFP/LLTO复合锂离子电池隔膜。考察分析了LLTO的含量对复合纳米纤维膜的表面形貌、热学性能及电化学性能的影响。研究结果表明,当LLTO的质量掺入量为15%时,该复合隔膜的电解液吸液率为249%,可达到商业隔膜(140%)的1.8倍,离子电导率达2.483×10~(-3)mS/cm;组装成电池后,首次放电比容量高达213mAh/g,显示出优异的电化学性能。     

聚偏氟乙烯/纳米二氧化硅/超高分子量聚乙烯锂电池复合隔膜的制备

通过静电喷涂技术成功制备出一种超高分子量聚乙烯(UHMWPE)锂电池复合隔膜。首先研究了纳米二氧化硅(SiO2)在聚偏氟乙烯(PVDF)溶液中的添加量对PVDF/SiO2共混溶液静电喷涂的影响,确定最佳喷涂条件。然后在UHMWPE膈膜上静电喷涂PVDF/SiO2微球,制备出PVDF/SiO2/UHMWPE复合隔膜。最后,对该复合隔膜的孔隙率、热稳定性、充放电性能进行测试。结果表明,该隔膜的孔隙率从46.5%提高到63.1%;纵向热收缩率从2.6%降低到1.3%;在0.2C充放电倍率下,首次放电比容量比相应的UHMWPE隔膜提高了32.5%,经过50次循环,放电比容量稳定,保持在155.7mAh/g左右。     

纳米SiO2/LiClO4/PVDF-HFP复合凝胶聚合物电解质的制备及其电化学性能

为了解决液态电解质锂离子电池存在的安全性问题,以偏氟乙烯和六氟丙烯的共聚物(PVDF-HFP)为基体,通过加入高氯酸锂(LiC1O4)、增塑剂(碳酸丙烯酯和碳酸二甲酯)、纳米二氧化硅等,制备出了具有高电导率的复合凝胶聚合物电解质.用X射线衍射仪测试聚合物电解质的结构,用交流阻抗法测定其电导率,用线性伏安扫描法研究了该聚合物电解质体系的电化学稳定性,并以其为电解质制备成锂离子电池进行充放电测试.结果表明,在20℃时复合凝胶聚合物电解质的电导率最高可达7.56×10-3S/cm,该电解质在4.6 V以下电化学窗口稳定,以其为电解质的锂离子电池具有良好的电化学性能,说明纳米SiO2/LiC1O4/PVDF-HFP复合凝胶聚合物电解质能满足锂离子电池的应用.     

氟硅改性丙烯酸酯无皂乳液的制备及性能

以纳米SiO2(Nano-SiO2)、γ-甲基丙烯酰氧乙基三甲氧基硅烷(KH570)、全氟烷基乙基丙烯酸酯(FM))等为主要原料,通过KH570改性纳米SiO2后,与FM等乙烯基单体共聚,制得了既含氟又含硅的丙烯酸酯有机/无机杂化无皂乳液。通过FT-IR、AFM及接触角测量等手段研究了共聚物的结构及性能。结果表明,氟硅单体均参与了共聚反应;乳胶膜耐热稳定性及残炭率均得以提高;加入SiO2后,涂膜凸起峰的高度和致密程度提高;当w(FM)=30%,w(SiO2)=0.5%时,涂膜对水及液体石蜡的接触角分别为125°及110°;激光粒度分布仪(DLS)分析表明,乳液平均粒径为98.37 nm。     

直接挥发法制备无纺布增强型聚合物电解质

以N,N-二甲基-甲酰胺(DMF)为溶剂, 采用直接挥发法制备无纺布增强型聚偏氟乙烯-六氟丙烯(PVDF-HFP)聚合物电解质, 并以锂为负极制备了聚合物电池.用扫描电子显微镜、交流阻抗和循环伏安对所制聚合物膜性能进行了表征,用充放电实验对所制聚合物电池电化学性能进行了测试.实验结果表明,直接挥发法制得的聚合物膜孔穴丰富,微孔呈蜂窝状,吸液率为280%,电化学稳定窗口为4.5V,浸取电解液后室温离子电导率为1.5mS/cm;以LiCoO2为正极制得的聚合物电池0.1C充放电, 放电平台为3.9V左右, 首次放电容量为137.5mAh/g,20次循环后容量保持在134mAh/g以上,充放电库仑效率高于95%,0.5C放电时放电平台为3.7V,0.5和1C放电分别能保持0.1C放电容量的96%和93%.     

PBS/SiO2纳米复合材料的制备及其结构与性能分析

以聚丁二醇丁二酸酯（PBS）为基材,经-甲基丙烯酰氧基丙基三甲氧基硅烷偶联剂（KH570）改性过的纳米SiO2和未改性的SiO2为填料,采用熔融共混法制备了PBS/SiO2纳米复合材料。研究了所得纳米复合材料的热稳定性能、力学性能和降解性能等。结果表明：当经KH570表面改性的纳米SiO2（KH570与纳米SiO2的质量之比为1：5）的添加质量分数为4%时,复合材料的维卡软化点约提高了10℃,拉伸强度约提高30%,同时复合材料的降解性能比PBS纯料的降解性能有一定的提高。     

同轴静电纺丝法制备纤维素基复合纳米纤维及其性能研究

采用同轴静电纺丝技术,以聚偏氟乙烯-六氟丙烯(PVDF-HFP)为壳层,醋酸纤维素(CA)为芯层,制备高效CA/PVDF-HFP复合纳米纤维膜,然后采用0.05mol/L的LiOH溶液对复合纳米纤维膜进行水解,得到纤维素/PVDFHFP复合纤维膜。分别采用差示扫描量热法、扫描电镜、透射电镜、接触角测量仪以及电化学工作站等对样品的性能进行了表征。结果表明:所得复合纳米纤维为壳核结构,并且其热稳定性好、孔隙率高、对电解液亲和性优良,将其用作锂离子电池隔膜,隔膜与锂电极之间的界面电阻低,因此可以推断,该复合纤维膜在锂离子电池隔膜领域的应用前景广泛。     

Structural and optical properties of AlxOy/Pt/AlxOy multilayer absorber

We report on the microstructure and optical properties of Al_xO_y–Pt–Al_xO_y interference-type multilayer films, deposited by electron beam (e-beam) deposition onto corning 1737 glass, silicon (1 1 1) and copper substrates. The structural properties were investigated by Rutherford backscattering spectrometry, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy and atomic force microscopy. The optical properties were extracted from specular reflection/transmission, diffuse reflectance and emissometer measurements. The stratification of the coatings consists of a semi-transparent middle Pt layer sandwiched between two layers of Al_xO_y. The top and bottom Al_xO_y layers were non-stoichiometric with no crystalline phases present. The Pt layer is in the fcc crystalline phase with a broad size distribution and spheroidal shape in and between the rims of Al_xO_y. The surface roughness of the stack was found to be comparable to the inter-particle distance. The optical calculations confirm a high solar absorptance of ∼0.94 and a low thermal emittance of ∼0.06 for the multilayer stack, which is attributed not only to the optimized nature of the multilayer interference stacks, but also to the specific surface morphology and texture of the coatings. These optical characteristics validate the spectral selectivity of the Al_xO_y–Pt–Al_xO_y interference-type multilayer stack for use in high temperature solar-thermal applications.     

Synthesis of a new perovskite Pb(Li14Nb34)O3

A high-pressure technique was adopted to obtain perovskite-type $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$. A new perovskite $\text{Pb(Li}{}_{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}\text{Nb}{}_{\mathrm{<mtext>3</mtext><mtext>4</mtext>}}\text{)}\text{O}{}_3$ was characterized to have a cubic symmetry with $\text{a}{}_{\mathrm{<mtext>o</mtext>}}\text{= 4.069}\text{A}\text{?}$; Li and Nb ions in the B-site of perovskite lattice may be in a random arrangement.     

Optimization of AlxOy/Pt/AlxOy multilayer spectrally selective coatings for solar-thermal applications

Spectrally selective Al_xO_y/Pt/Al_xO_y multilayer absorber coatings were deposited onto corning 1737 glass, Si (111) and copper substrates using electron beam (e-beam) vacuum evaporator at room temperature. The employment of ellipsometric measurements and optical simulation was proposed as an effective method to optimize and deposit multilayer solar absorber coatings. The optical constants (n and k) measured using spectroscopic ellipsometry, showed that both Al_xO_y layers, which used in the coatings, were dielectric in nature and the Pt layer was semi-transparent. The optimized multilayer coatings exhibited high solar absorptance α ∼ 0.94 ± 0.01 and low thermal emittance ? ∼ 0.06 ± 0.01 at 82 °C. The Rutherford backscattering spectroscopy (RBS) data of Al_xO_y/Pt/Al_xO_y multilayer absorber indicated the Al_xO_y layers present in the coating were nearly stoichiometry. The scanning electron microscope analysis (SEM) result indicated that the average diameter and inter-particles distance of Pt grains were statistically about 146 ± 0.17 nm and 6-10 ± 0.2 nm respectively.     

Bulk crystalline BaPb34Bi14O3: A ceramic superconductor

The preparation conditions of the high T_C ceramic superconductor Ba(Pb,Bi)O₃ is correlated with the superconducting transition. Transition onsets of all materials are similar, but transition widths and transition completeness is strongly dependent on firing temperature. Only materials prepared over a narrow temperature range, resulting in a nearly ideal weight loss, have a complete and narrow transition.     

Electrostriction in Pb (Zn13Nb23)O3

The electrostriction in $\text{Pb (Zn}{}_{\mathrm{<mtext>1</mtext><mtext>3</mtext>}}\text{Nb}{}_{\mathrm{<mtext>2</mtext><mtext>3</mtext>}}\text{)}\text{O}{}_3$ crystals has been investigated using a strain gauge method. In the ferroelectric phase below 140 C, the strain vs the electric field shows a hysteresis, which is ascribed to the effect of ferroelectric domains. A quadratic relation holds between the strain x and the electric polarization P as x = QP² above about 170 C in the paraelectric phase. Values of the electrostrictive Q coefficients are determined from the measurements near 190 C, as Q₁₁ = 1.6·10^?2m⁴/C², Q₁₂ = ?0.86·10^?2m⁴/C², and Q₄₄ = 0.85·10^?2m⁴/C².     

Magnetic,electrical and thermal studies on the V1−xMox02

The monoclinic-to-tetragonal structure transition of oxides V_1?xMo_x0₂ with $\text{0≤}\text{x}\text{≤0.20}$ has been studied by means of DTA, X-ray diffraction, magnetic susceptibility (powder samples) and electrical conductivity (single crystals) measurements within the temperature region 80 K to 400 K. A linear decrease of the transition temperature of 11 K per atom % Mo was observed. The magnetic susceptibility of the low temperature phase was found to be temperature independent paramagnetic for all preparations. Electrical conductivity measurements on the same phase showed crystals with $\text{x}\text{? 0.04}$ to be semiconducting, while a metallic behavior was observed in the region $\text{0.10 ?}\text{x}\text{? 0.14}$.     

n-PbTep+−Pb1−xSnxTe heterojunctions prepared by a modified hot wall technique

$\text{n-PbTe}\text{p}{}^{\mathrm{+}}\text{?}\text{Pb}{}_{\mathrm{1?x}}\text{Sn}{}_{\mathrm{x}}\text{Te}$ heterojunctions with a long wavelength spectral cutoff (λ_c ≈ 6 μm) were prepared using the double-channel hot wall technique. The electrical and photoelectrical properties of the heterojunctions at 77, 197 and 300 K were investigated. Detectors with R_oA equal to 170 Ω cm² and a quantum efficiency of 25–40% were obtained. Reasons for the shift of the long wavelength spectral cutoff of the heterojunctions towards shorter wavelengths are given.     

Reactive plasma deposited SixCyHz films

Si_xC_yH_z films have been prepared at 200°C by reactive plasma deposition from SiH₄ and CH₄ diluted in helium in a tubular reactor. These films have a ratio s (equal to $\text{Si}\text{(}\text{Si+C}\text{))}$ ranging from 0.2 to 0.8, a refractive index ranging from 1.96 to 2.6 and an optical energy band gap in the range 2.7-2.2 eV. The total quantity of hydrogen in the film is 40% when s=0.5. Infrared analysis shows that these films have large fractions of homonuclear bonds and that this material is best described as a polymer. Mass spectrometric measurements of the gaseous products formed in the SiH₄-CH₄-He plasma have been performed and the results are related to the composition of the deposited layers.     

Core-current-enhanced domain-wall pinning in nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon

We have studied the influence of surface fields H/sub p/ (generated by either direct or alternating core current) on soft magnetic properties of amorphous and nanocrystalline Fe/sub 73.5/Cu/sub 1/Nb/sub 3/Si/sub 15.5/B/sub 7/ ribbon. While in an amorphous ribbon the coercive field H/sub c/ decreases with H/sub p/, in the same optimally annealed ribbon (H/sub c/=1.3 A/m, M/sub m//spl ap/M/sub s/) H/sub c/ increases with H/sub p/ for all the explored types of H/sub p/ (static and dynamic with different phases with respect to that of the magnetizing field H). The unexpected increase of H/sub c/ in nanocrystalline ribbon is associated with the influence of H/sub p/ on the surface and main (inner) domain structure. Here, we develop a model that takes into account this influence and explains the experimental results.     

Interfacial microstructure of NiSix/HfO2/SiOx/Si gate stacks

Integration of NiSi_x based fully silicided metal gates with HfO₂ high-k gate dielectrics offers promise for further scaling of complementary metal-oxide- semiconductor devices. A combination of high resolution transmission electron microscopy and small probe electron energy loss spectroscopy (EELS) and energy dispersive X-ray analysis has been applied to study interfacial reactions in the undoped gate stack. NiSi was found to be polycrystalline with the grain size decreasing from top to bottom of NiSi_x film. Ni content varies near the NiSi/HfO_x interface whereby both Ni-rich and monosilicide phases were observed. Spatially non-uniform distribution of oxygen along NiSi_x/HfO₂ interface was observed by dark field Scanning Transmission Electron Microscopy and EELS. Interfacial roughness of NiSi_x/HfO_x was found higher than that of poly-Si/HfO₂, likely due to compositional non-uniformity of NiSi_x. No intermixing between Hf, Ni and Si beyond interfacial roughness was observed.