Ordered arrays of silicon nanowires produced by nanosphere lithography and molecular beam epitaxy

Because of their importance in fundamental research and possible applications in nanotechnology and nanoelectronics, semiconductor nanowires have attracted much interest. In addition to the growth itself, the control of the size and location is an essential problem. Here we show the growth of ordered arrays of vertically aligned silicon nanowires by molecular beam epitaxy using prepatterned arrays of gold droplets on Si(111) substrates. The ordered arrays of gold particles were produced by nanosphere lithography.     

Fabrication of polypyrrole-based nanoelectrode arrays by colloidal lithography

This paper describes a novel technique to produce polypyrrole-based nanoelectrodes for electrochemical detection purpose. The fabrication process relies on the creation of patterned nanotemplates i.e., nanometric gold spots surrounded by an electrically insulating material (SiO(x)). From these templates, polypyrrole nanopillars are grown by classical electrochemical methods. Atomic force microscopy demonstrates that polypyrrole grows selectively inside the gold nanotemplates. The electrochemical characterization by cyclic voltammetry showed a sigmoidal-shaped voltammogram characterizing the typical nanoelectrode array behavior.     

Fabrication of large number density platinum nanowire arrays by size reduction lithography and nanoimprint lithography

Large number density Pt nanowires with typical dimensions of 12 microm x 20 nm x 5 nm (length x width x height) are fabricated on planar oxide supports. First sub-20 nm single crystalline silicon nanowires are fabricated by size reduction lithography, and then the Si nanowire pattern is replicated to produce a large number of Pt nanowires by nanoimprint lithography. The width and height of the Pt nanowires are uniform and are controlled with nanometer precision. The nanowire number density is 4 x 10(4) cm(-1), resulting in a Pt surface area larger than 2 cm(2) on a 5 x 5 cm(2) oxide substrate. Bimodal nanowires with different width have been generated by using a Pt shadow deposition technique. Using this technique, alternating 10 and 19 nm wide nanowires are produced.     

Polycarbonate-based ordered arrays of electrochemical nanoelectrodes obtained by e-beam lithography

Ordered arrays of nanoelectrodes for electrochemical use are prepared by electron beam lithography (EBL) using polycarbonate as a novel e-beam resist. The nanoelectrodes are fabricated by patterning arrays of holes in a thin film of polycarbonate spin-coated on a gold layer on Si/Si(3)N(4) substrate. Experimental parameters for the successful use of polycarbonate as high resolution EBL resist are optimized. The holes can be filled partially or completely by electrochemical deposition of gold. This enables the preparation of arrays of nanoelectrodes with different recession degree and geometrical characteristics. The polycarbonate is kept on-site and used as the insulator that separates the nanoelectrodes. The obtained nanoelectrode arrays (NEAs) exhibit steady state current controlled by pure radial diffusion in cyclic voltammetry for scan rates up to approximately 50 mV s( - 1). Electrochemical results showed satisfactory agreement between experimental voltammograms and suitable theoretical models. Finally, the peculiarities of NEAs versus ensembles of nanoelectrodes, obtained by membrane template synthesis, are critically evaluated.     

Plasmon hybridization in stacked double crescents arrays fabricated by colloidal lithography

We apply colloidal lithography to construct stacked nanocrescent dimer structures with an exact vertical alignment and a separation distance of approximately 10 nm. Highly ordered, large arrays of these nanostructures are accessible using nonclose-packed colloidal monolayers as masks. Spatially separated nanocrescent dimers are obtained by application of spatially distributed colloids. The polarization dependent optical properties of the nanostructures are investigated in detail and compared to single crescents. The close proximity of the nanocrescents leads to a coupling process that gives rise to new optical resonances which can be described as linear superpositions of the individual crescents' plasmonic modes. We apply a plasmon hybridization model to explain the spectral differences of all polarization dependent resonances and use geometric arguments to explain the respective shifts of the resonances. Theoretical calculations are performed to support the hybridization model and extend it to higher order resonances not resolved experimentally.     

Large-scale ordered silicon microtube arrays fabricated by Poisson spot lithography

A novel approach based on the Poisson spot effect in a conventional optical lithography system is presented for fabricating large-scale ordered ring patterns at low cost, in which the pattern geometries are tuned by controlling the exposure dose and deliberate design of the mask patterns. Following this by cryogenic deep etching, the ring patterns are transferred into Si substrates, resulting in various vertical tubular Si array structures. Microscopic analysis indicates that the as-fabricated Si microtubes have smooth interior and exterior surfaces that are uniform in size, shape and wall-thickness, which exhibit potential applications as electronic, biological and medical devices.     

Ordered arrays of faceted gold nanoparticles obtained by dewetting and nanosphere lithography

Nanoparticle arrays have potential applications in many areas, such as optics and electronics. Earlier work is mostly concentrated on the synthesis of such arrays, whereas we would like to focus on the control of particle size and shape, which has a great influence on the particle properties. In this study three different types of arrays of faceted nanoparticles were synthesized; it is shown that the particle size and shape in such arrays can be modified by the annealing treatment. By taking advantage of this, a novel method for the production of lines of faceted particles was demonstrated. These structures have potential applications as plasmon waveguides.     

Fabrication of TiO2 memristive arrays by step and flash imprint lithography

Identical patterns and characteristics of sub-100 nm TiO2-based memristive systems on 4 inch silicon substrates were demonstrated using Step and flash imprint lithography (SFIL). SFIL is a nanoimprint lithography technique that offers the advantagess of a high aspect-ratio, reliable nano-patterns, and a transparent stamp that can be used to facilitate overlay techniques. The overlay process from the alignment system in IMPRIO 100 was appropriate for the fabrication of nanoscale crossbar arrays in this study. High-density crossbar arrays that consisted of TiO2 resistive switching material that was sandwiched between Pt electrodes with a width of 80 nm and a half-pitch of 100 nm were in turn replicated through successive imprinting and etching processes. The use of the direct metal etching process enhanced the uniformity of the TiO2/Pt interface. The electrical property of the crossbar arrays showed the bipolar switching behavior that resulted in the application of the nonvolatile resistive memory.     

Color variation in periodic Ag line arrays patterned by using electron-beam lithography

Periodic Ag line arrays with different line pitches from 500 nm to 950 nm on ITO coated glass substrates have been fabricated by using electron-beam lithography (EBL) technique for studying the color light guide in a display system. The patterned Ag line array is used as a light outcoupling and color-selection component due to the emission wavelength changed by the Ag line arrays with different periodic distances that could achieve color variation. We have demonstrated that the ITO coated glass substrates containing periodic Ag line arrays with varied line pitches can be used as a color filter in a display device. This means that with a proper metallic nanostructure layer, the red, green, and blue colors in a display system can be obtained without a traditional color filter for modern multi-applications of optoelectronic display devices.     

Self-assembled molecular pattern by chemical lithography and interfacial chemical reactions

The fabrication of lipid-modified molecular patterns by Chemical Lithography combined with interfacial chemical reactions is reported. In this method, self-assembled monolayers (SAMs) of 4'-nitro-1,1'-biphenyl-4-thiol (NBT) were structured by Chemical Lithography which produced cross-linked 4'-amino-1,1'-biphenyl-4-thiol (cABT) monolayers within a nitro-terminated (NBT) matrix. The terminal amino groups in the cABT monolayer were diazotized to create diazo cations, and the lipid monolayer with negative charge was assembled on the diazo regions by electrostatic attraction. Under the exposure of UV light, the photoreaction occurs. The diazonium groups interacting with the lipid headgroups via electrostatic attraction decompose and release N2 which leads to the lipid monolayer covalently attaching to the cABT region. The presence of phosphorus in X-ray photoelectron spectra (XPS) reveals the binding of the phospholipid layer to the cABT surface. Atomic force microscopy (AFM) images display that lipid-modified molecular patterns with different sizes and shapes and with a thickness of ca. 2.5 nm have been formed. The resulting lipid-modified molecular patterns are considered to be a first step towards obtaining stable biointerfacing patterns and studying biomolecular recognition.     

Inherently reproducible fabrication of plasmonic nanoparticle arrays for SERS by combining nanoimprint and copolymer lithography

We present an inherently reproducible route to realizing high-performance SERS substrates by exploiting a high-throughput top-down/bottom-up fabrication scheme. The fabrication route employs self-assembly of amphiphilic copolymers to create high-resolution molds for nanoimprint lithography (NIL) spanning entire 100 mm Si wafers. The nanoporous polymer templates obtained upon NIL are subjected to galvanic displacement reactions to create gold nanorod arrays. Nanorods are subsequently converted to nanodiscs by thermal annealing. The nanodiscs were found to perform as robust SERS substrates as compared with the nanorods. The SERS performance of these substrates and its generality for catering to diverse molecules is demonstrated through the excellent Raman peak resolution and intensity for three different molecules, exhibiting different interaction modes on surface. Numerical simulations using FDTD shows plasmonic coupling between the particles and also brings out the influence due to size distribution. The approach combines distinct advantages of high-precision and repeatability offered by NIL with low-cost fabrication of high-resolution NIL molds by copolymer self-assembly.     

Non-lift-off block copolymer lithography of 25 nm magnetic nanodot arrays

Although nanolithographic techniques based on self-assembled block copolymer templates offer tremendous potential for fabrication of large-area nanostructure arrays, significant difficulties arise with both the lift-off and etch processes typically used for pattern transfer. These become progressively more important in the limit of extreme feature sizes. The few techniques that have been developed to avoid these issues are quite complex. Here, we demonstrate successful execution of a nanolithographic process based on solvent annealed, cylinder-forming, easily degradable, polystyrene-b-polylactide block copolymer films that completely avoids lift-off in addition to the most challenging aspects of etching. We report a "Damascene-type" process that overfills the polystyrene template with magnetic metal, employs ion beam milling to planarize the metal surface down to the underlying polystyrene template, then exploits the large etch rate contrast between polystyrene and typical metals to generate pattern reversal of the original template into the magnetic metal. The process is demonstrated via formation of a large-area array of 25 nm diameter ferromagnetic Ni(80)Fe(20) nanodots with hexagonally close-packed order. Extensive microscopy, magnetometry, and electrical measurements provide detailed characterization of the pattern formation. We argue that the approach is generalizable to a wide variety of materials, is scalable to smaller feature sizes, and critically, minimizes etch damage, thus preserving the essential functionality of the patterned material.     

Ordered binary arrays of Au nanoparticles derived from colloidal lithography

By using angle-resolved colloidal lithography and O2-plasma etched bilayers of hexagonally packed spheres as templates, we succeeded in fabrication of highly ordered binary arrays of gold nanoparticles with varied shapes, for instance, with a shuttlecock-like shape composed of a small crescent-shaped nanoparticle and a big fan-shaped one. The size and shape of both small and big nanoparticles obtained were manipulated by the plasma etching period and the incidence angle of Au vapor flow. The subsequent thermal annealing led to binary arrays of round Au nanoparticles with a rather narrow distribution in terms of size and shape. Our approach should pave a simple and versatile colloidal way to form binary nanoparticle arrays, holding immense promise for technical applications such as nanoelectronics and nanophotonics.     

Freeform lens arrays for off-axis illumination in an optical lithography system

We propose a method of designing a freeform lens array for off-axis illumination (OAI) in optical lithography to produce desired OAI patterns and improve efficiency. Based on the Snell law and the conservation law of energy, a set of first-order partial differential equations are derived and the coordinate relations for each OAI pattern are established. The contours of the freeform lens unit are calculated numerically by solving the partial differential equations, and the freeform lens array is obtained by arraying the lens units. Moreover, the optical performance for each OAI pattern is simulated and analyzed by software. Simulation results show that the irradiance distribution of each OAI pattern can be well controlled with a maximum uniformity of 92.45% and a maximum efficiency of 99.35%. Also, analysis indicates that this method has the advantages of reducing the complexity of the exposure system and having good tolerance to the input intensity variations of the laser beam.     

Synthesis of silicon nanowires and nanofin arrays using interference lithography and catalytic etching

We report results on the synthesis of silicon nanostructures that were fabricated using a combination of interference lithography and catalytic etching. With this technique, we were able to create nanostructures that are perfectly periodic over very large areas (1 cm(2) or more), where the cross-sectional shapes and the array ordering can be varied. Furthermore this technique can readily and independently control the sizes and spacings of the nanostructures down to spacings of 200 nm or less. These characteristics cannot be achieved using other known techniques.     

Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography

Abstract

This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.     

pH- and salt-dependent molecular combing of DNA: experiments and phenomenological model

λ-DNA as well as plasmids can be successfully deposited by molecular combing on hydrophobic surfaces, for pH values ranging from 4 to 10. On polydimethylsiloxane (PDMS) substrates, the deposited DNA molecules are overstretched by about 60-100%. There is a significant influence of sodium ions (NaCl) on the surface density of the deposited DNA, with a maximum near to 100 mM NaCl for a DNA solution (28 ng μl(-1)) at pH 8. The combing process can be described by a micromechanical model including: (i) the adsorption of free moving coiled DNA at the substrate; (ii) the stretching of the coiled DNA by the preceding meniscus; (iii) the relaxation of the deposited DNA to the final length. The sticky ends of λ-DNA cause an adhesion force in the range of about 400 pN which allows a stable overstretching of the DNA by the preceding meniscus. The exposing of hidden hydrophobic bonds of the overstretched DNA leads to a stable deposition on the hydrophobic substrate. The pH-dependent density of deposited DNA as well as the observed influence of sodium ions can be explained by their screening of the negatively charged DNA backbone and sticky ends, respectively. The final DNA length can be derived from a balance of the stored elastic energy of the overstretched molecules and the energy of adhesion.     

Formation of nanometer-scale structures using conventional optical lithography

We investigated a new method to form the line-and-space patterns with a nanometer-scale using the conventional optical lithography technique and the metal deposition/liftoff process. The ashing of the negative photo resist defined by the conventional optical lithography technique results in the proper profiles including a high aspect ratio (i.e., height/width value of the patterns) for the formation of nanometer-scale structures. We demonstrated that the metal electrodes with the nanometer-scale gap of 20 nm or less can be easily obtained by the newly proposed method without employing the highly sophisticated lithography tools including an electron beam lithography.     

Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography

Monocrystalline, vertically aligned and faceted GaN nanorods with controlled diameter have been synthesized by selective organometallic vapor phase epitaxy (OMVPE) onto GaN exposed at the bottom of pores in silicon dioxide templates patterned by reactive ion etching through self-organized porous anodic alumina films. This process is free of foreign catalysts, and the nanorod diameter control is achieved without the need for low-throughput nanolithographic techniques. The use of conventional OMVPE growth conditions allows for the straightforward adaptation of conventional doping and heterostructure growth as will be necessary for the fabrication of nanorod-based strain-relaxed electrically pumped lasers and light-emitting diodes.     

Ordered arrays of <100>-oriented silicon nanorods by CMOS-compatible block copolymer lithography

Dense, ordered arrays of <100>-oriented Si nanorods with uniform aspect ratios up to 5:1 and a uniform diameter of 15 nm were fabricated by block copolymer lithography based on the inverse of the traditional cylindrical hole strategy and reactive ion etching. The reported approach combines control over diameter, orientation, and position of the nanorods and compatibility with complementary metal oxide semiconductor (CMOS) technology because no nonvolatile metals generating deep levels in silicon, such as gold or iron, are involved. The Si nanorod arrays exhibit the same degree of order as the block copolymer templates.