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1.
本文报道了利用低压金属有机物汽相外延(LP-MOVPE)技术,在(001)InP衬底上生长In_(1-x)Ga_xAs体材料及In_(1-x)Ga_xAs/InP量子阶结构材料的结果.对于TMG/TEIn源,In_(1-x)Ga_xAs材料的非故意掺杂载流子依匿为7.2×1016cm-3,最窄光致发光峰值半宽为18.9meV,转靶X光衍射仪对量子阶结构材料测到±2级卫星峰;而对于TMG/TMIn源,非故意掺杂载流于浓度为3.1×10 ̄15cm ̄(-3),最窄光致发光峰值半宽为8.9meV,转靶X光衍射仪对量子阶  相似文献   

2.
本文利用透射电镜(TEM)和X射线能谱(EDS)对铕-二苯甲酰甲烷配合物(Eu(DBM)3)在溶液中的分形聚集进行了研究,结果表明:Eu(DBM)3超细微粒在表面活性剂形成的溶胶中,以及在溶胶中长时间静置后,其聚集体均具有分形特征,Hausdorff分形维数Df分别为1.66、1.68。  相似文献   

3.
Mo/Si多层膜界面离子束处理及TEM观察薛钰芝R.Schlatmann,林纪宁A.Keppel,J.Verhoeven(大连铁道学院,大连116022)(荷兰FOM原子分子物理研究所)软X射线多层膜(MultilayersforSoftX-rayO...  相似文献   

4.
重点介绍了TI(TEXAS INSTRUMENTS)公司的定点信号处理芯征--TMS320C5X。然后,描述利用TMS320C50实现的可变速率可变时序的复分接器。  相似文献   

5.
测试与测量     
Linux仪器控制方案NationalInstruments公司将其VXI和VME控制方案扩展到了Linux平台,其中包括LabVIEW(TM)、GPIB和嵌入及远程控制。NI开发的针对VXIpc(TM)和MXI(TM)-2的Linux解决方案满足了来自教育、研究和工业界日益增长的支持Linux操作系统的要求。原来利用NI-VXI/VISA和VXI-PCI8000系列套件或嵌入控制器构建VXI/VME系统的用户,利用VXI/VME-PCI8026套件或VXIpc-870控制器,不需要修改代码就可…  相似文献   

6.
钨和钼的氮化物是很少研究的过渡金属氮化物。r-Mo2N,δ-MoN,β-W2N和δ-WN这些难熔固体具有工业上有用的性能,如极高的硬度和耐磨性。这些氮化物因性能的不同而分别用作包装材料、结构材料和催化剂。本研究检查了在掺有少量甲苯的氮中研磨(湿磨)的W和Mo的结构转变。试样研磨70、160、260、600和850小时,用X线衍射仪、TEM、SEM、DSC、DTA和TGA进行分析。用TGA和氧化分析  相似文献   

7.
加弧辉光离子渗钛层相组成的研究   总被引:3,自引:0,他引:3  
本文采用加弧辉光离子渗金属技术,实现了在不同含碳量普通碳钢表面的渗钛。对渗层合金元素的分布进行了测定;并应用X射线衍射及透射电镜测试方法,研究了渗钛层的相组成及相分布。分析结果表明:在低碳钢(0.1wt.%C)试样表面形成的渗层为固溶了一定钛元素的合金铁素体α相,同时含有ξ-FeTi中间相及碳化物γ-TiC,当含碳量高时(0.6,1.2wt.%C),试样表面形成以碳化物γ-TiC为主的化合物渗层。  相似文献   

8.
本通过测量SI-GaAs抛光晶片及其本体(腐蚀了晶片的亚表面损伤层)的X射线回摆曲线FWHM,与抛光晶片的TEM观测相结合,作出晶片回擂曲线FWHM的比率R与TEM观测的晶片亚表面损伤层厚度D的关系曲线,建立了一种定量检测SI-GaAs抛光晶片的亚表面损伤层厚度技术,中将对这种技术进行描述并作讨论。  相似文献   

9.
新品传真     
无限商机推出中国第一个自主产权的Voicexml人机对话平台 近日,无限商机通信技术有限公司基于VOICEXML的平台产品——TEL-win(天赢)100企业级人机对话平台和 Tel-Win(天赢)1000电信级人机对话平台正式对外推出。这是中国第一个开发完成的具有自主产权的VXML人机对话平台,它整合了VoiceXML 浏览器、ASR、TTS。以TEL-win平台为基础,无限商机还针对企业与行业用户同时推出了企业智能总机(TEL-win1.0Inside)和VoiceXML智能呼叫中心(TEL-…  相似文献   

10.
众所周知,在扫描电镜X射线能谱分析中,杂散X射线的存在,将影响能谱分析的精度。上海永新彩管公司使用的仪器系进口的SX-40ASEM和PGT-IMIXEDS,在分析样品时,经常发现有杂散Cu峰干扰。严重影响了测试工作的开展。为此,作者就杂散X射线的产生...  相似文献   

11.
The effects of Co addition on the undercooling, microstructure, and microhardness of Sn-3.5Ag solder (all in wt.% unless specified otherwise) and interfacial reactions with Ni-P under bump metallurgy (UBM) are investigated when the Co content varies from 0.01 wt.% to 0.7 wt.%. When more than 0.02 wt.% Co was added to Sn-3.5Ag solder, the undercooling of the Sn-3.5Ag solder was significantly reduced and the microstructures coarsened with the increased eutectic region. In addition, the hardness value increased as the Co content in Sn-3.5Ag increased. In the interfacial reactions with Ni-P UBM, a spalling phenomenon of intermetallic compounds (IMCs) during reflow was prevented in the Sn-3.5Ag-xCo (x ≥ 0.02 wt.%). However, when more than 0.05 wt.% Co was added to Sn-3.5Ag, the IMC morphology changed from a bulky shape to a plate-like shape. The bulky IMCs were Ni3Sn4 and the plate-like IMCs were Sn-Ni-Co ternary compounds. The main issues discussed include the relations between the morphological changes and the IMC phases, the effects of Co addition on the prevention of IMC spalling, and the optimum level of Co addition.  相似文献   

12.
Aluminum was added into Sn-3.0Ag (wt.%) solder to investigate the effect of aluminum concentration on the interfacial reaction of Sn-3.0Ag-xAl solders with copper or electroless nickel immersion gold (ENIG) metallizations. Four different Sn-3.0Ag-xAl solders (= 0 wt.%, 0.1 wt.%, 0.5 wt.%, and 1.0 wt.%) were used for comparison. It was found that the composition, morphology, and thickness of interfacial reaction products were strongly dependent on aluminum concentration. At low aluminum concentration (0.1 wt.%), the typical Cu6Sn5 layer was formed at the interface. When the aluminum concentration was 0.5 wt.%, a continuous CuAl2 layer spalled off from the interfacial Cu-Sn intermetallic compound (IMC) layer. Only a planar CuAl2 layer was observed at the interface when the aluminum concentration was increased to 1.0 wt.%. In Sn-Ag-Al/ENIG reactions, Ni3Sn4 was formed and spallation occurred near the interface in the Sn-3.0Ag and Sn-3.0Ag-0.1Al solder joints. When the aluminum concentration was higher than 0.1 wt.%, a thin planar AuAl compound formed at the interface. There was no P-rich phase formation that retarded the spalling phenomenon. The aluminum additive in Sn-Ag solder inhibited the growth of IMCs in the reaction with copper or ENIG metallizations, which was favorable for the reliability of solder joints.  相似文献   

13.
The solder joint microstructures of immersion Ag with Sn-xZn (x = 0 wt.%, 1 wt.%, 5 wt.%, and 9 wt.%) solders were analyzed and correlated with their drop impact reliability. Addition of 1 wt.% Zn to Sn did not change the interface microstructure and was only marginally effective. In comparison, the addition of 5 wt.% or 9 wt.% Zn formed layers of AgZn3/Ag5Zn8 at the solder joint interface, which increased drop reliability significantly. Under extensive aging, Ag-Zn intermetallic compounds (IMCs) transformed into Cu5Zn8 and Ag3Sn, and the drop impact resistance at the solder joints deteriorated up to a point. The beneficial role of Zn on immersion Ag pads was ascribed to the formation of Ag-Zn IMC layers, which were fairly resistant to the drop impact, and to the suppression of the brittle Cu6Sn5 phase at the joint interface.  相似文献   

14.
Small amounts of the rare-earth element Ce were added to the Sn-rich lead-free eutectic solders Sn-3.5Ag-0.7Cu, Sn-0.7Cu, and Sn-3.5Ag to improve their properties. The microstructures of the solders without Ce and with different amounts (0.1 wt.%, 0.2 wt.%, and 0.5 wt.%) of Ce were compared. The microstructure of the solders became finer with increasing Ce content. Deviation from this rule was observed for the Sn-Ag-Cu solder with 0.2 wt.% Ce, and for the Sn-0.7Cu eutectic alloy, which showed the finest microstructure without Ce. The melting temperatures of the solders were not affected. The morphology of intermetallic compounds (IMC) formed at the interface between the liquid solders and a Cu substrate at temperatures about 40°C above the melting point of the solder for dipping times from 2 s to 256 s was studied for the basic solder and for solder with 0.5 wt.% Ce addition. The morphology of the Cu6Sn5 IMC layer developed at the interface between the solders and the substrate exhibited the typical scallop-type shape without significant difference between solders with and without Ce for the shortest dipping time. Addition of Ce decreased the thickness of the Cu6Sn5 IMC layer only at the Cu/Sn-Ag-Cu solder interface for the 2-s dipping. A different morphology of the IMC layer was observed for the 256-s dipping time: The layers were less continuous and exhibited a broken relief. Massive scallops were not observed. For longer dipping times, Cu3Sn IMC layers located near the Cu substrate were also observed.  相似文献   

15.
The results of a study of film composites based on polyvinylidene fluoride with carbon nanotubes (CNTs) by dielectric relaxation spectroscopy are presented. For composite samples containing more than 0.5 wt % of nanotubes, nonlinear current–voltage characteristics are obtained. The concentration dependences of the electrical conductivity of the composites are examined and the percolation threshold for the samples under study is determined. It is shown that an insignificant increase in the electrical conductivity of the composites is observed even upon filling with 0.2 wt % of CNTs, whereas the electrical conductivity becomes three orders of magnitude higher upon the introduction of 1 wt% of CNTs and is seven orders of magnitude higher at more than 3 wt %, compared with the unfilled polymer. This confirms that CNTs are promising for the development of electrically conducting composites and film materials on the basis of polyvinylidene fluoride.  相似文献   

16.
In the present study, Sn-Cu solders were synthesized using pure tin with varying weight percentage of nanosized copper particles (0 wt.%, 0.25 wt.%, 0.43 wt.%, 0.86 wt.%, and 1.35 wt.%) by a powder metallurgy route incorporating microwave-assisted sintering. Intermetallic compound (IMC) layer formation between Sn-Cu solders and Cu substrates was investigated following a reflow process. Isothermal aging studies were also conducted on selected Sn-Cu solders at 150°C for up to 4 weeks. Results revealed that the average IMC layer thickness decreases with the addition of nanocopper up to 0.43 wt.%. Beyond 0.43 wt.% Cu addition, the IMC layer thickness started to increase, and the maximum IMC layer thickness was found for Sn with 1.35 wt.% Cu addition. An attempt was made in this study to correlate the effect of nanocopper additions and aging time on the IMC layer thicknesses.  相似文献   

17.
The effects of 1 wt.%, 5 wt.%, and 10 wt.% additions of indium (In) on the microstructure and compound morphology of Sn-Ag-Sb lead-free solder joints␣were examined. The results showed that In prompts the formation of Ag3(Sn,In), Ag2(In,Sn), and InSb compounds within the solder matrix. As the amount of In was increased, the Sn atoms in the Ag3Sn compound were gradually replaced by In atoms, prompting a transformation from Ag3Sn to Ag3(Sn,In) and finally to Ag2(In,Sn). This transformation occurs more readily under high-temperature conditions. The Ag2(In,Sn) compound formed in Sn-Ag-Sb-xIn/Cu solder joints was found to have either a leaf-like morphology or an antler-like morphology. Finally, with In additions greater than 5 wt.%, the Cu6Sn5 interfacial compounds in the solder/Cu joints transformed into Cu6(Sn,In)5.  相似文献   

18.
Nickel plating has been used as the under bump metallization (UBM) in the microelectronics industry. The electroplated Ni-P UBM with different phosphorous contents (7 wt.%, 10 wt.%, and 13 wt.%) was used to evaluate the interfacial reaction between Ni-P UBM and Sn-3Ag-0.5Cu solder paste during multiple reflow. (Cu,Ni)6Sn5 intermetallic compounds (IMC) formed in the SnAgCu solder/Ni-P UBM interface after the first reflow. For three times reflow, (Ni,Cu)3Sn4 IMC formed, while (Cu,Ni)6Sn5 IMC spalled into the solder matrix. With further increasing cycles of reflow, the Ni-Sn-P layer formed between (Ni,Cu)3Sn4 IMC and Ni-P UBM for Ni-10wt.%P and Ni-13wt.%P UBM. However, almost no Ni-Sn-P layer was revealed for the Ni-7wt.%P UBM even after ten cycles of reflow. In consideration of the wettability of Ni-P UBM, the interfacial reaction of SnAgCu/Ni-P, and dissolution of Ni-P UBM, the optimal phosphorous selection in Ni-P UBM was proposed and also discussed.  相似文献   

19.
This study aims to investigate the shear and tensile impact strength of solder ball attachments. Tests were conducted on Ni-doped and non-Ni-doped Sn-0.7wt.% Cu, Sn-37wt.% Pb and Sn-3.0wt.% Ag-0.7wt.% Cu solder ball grid arrays (BGAs) placed on Cu substrates, which were as-reflowed and aged, over a wide range of displacement rates from 10 to 4000 mm/s in shear and from 1 to 400 mm/s in tensile tests. Ni additions to the Sn-0.7wt.% Cu solders has slowed the growth of the interface intermetallic compounds (IMCs) and made the IMC layer morphology smooth. As-reflowed Ni-doped Sn-0.7wt.% Cu BGA joints show superior properties at high speed shear and tensile impacts compared to the non-Ni-doped Sn-0.7wt.% Cu and Sn-3.0wt.% Ag-0.7wt.% Cu BGAs. Sn-3.0wt.% Ag-0.7wt.% Cu BGAs exhibit the least resistance in both shear and tensile tests among the four compositions of solders, which may result from the cracks in the IMC layers introduced during the reflow processes.  相似文献   

20.
This work investigates the effects of 0.1?wt.% and 0.5?wt.% Al additions on bulk alloy microstructure and tensile properties as well as on the thermal behavior of Sn-1Ag-0.5Cu (SAC105) lead-free solder alloy. The addition of 0.1?wt.% Al reduces the amount of Ag3Sn intermetallic compound (IMC) particles and leads to the formation of larger ternary Sn-Ag-Al IMC particles. However, the addition of 0.5?wt.% Al suppresses the formation of Ag3Sn IMC particles and leads to a large amount of fine Al-Ag IMC particles. Moreover, both 0.1?wt.% and 0.5?wt.% Al additions suppress the formation of Cu6Sn5 IMC particles and lead to the formation of larger Al-Cu IMC particles. The 0.1?wt.% Al-added solder shows a microstructure with coarse ??-Sn dendrites. However, the addition of 0.5?wt.% Al has a great effect on suppressing the undercooling and refinement of the ??-Sn dendrites. In addition to coarse ??-Sn dendrites, the formation of large Sn-Ag-Al and Al-Cu IMC particles significantly reduces the elastic modulus and yield strength for the SAC105 alloy containing 0.1?wt.% Al. On the other hand, the fine ??-Sn dendrite and the second-phase dispersion strengthening mechanism through the formation of fine Al-Ag IMC particles significantly increases the elastic modulus and yield strength of the SAC105 alloy containing 0.5?wt.% Al. Moreover, both 0.1?wt.% and 0.5?wt.% Al additions worsen the elongation. However, the reduction in elongation is much stronger, and brittle fracture occurs instead of ductile fracture, with 0.5?wt.% Al addition. The two additions of Al increase both solidus and liquidus temperatures. With 0.5?wt.% Al addition the pasty range is significantly reduced and the differential scanning calorimetry (DSC) endotherm curve gradually shifts from a dual to a single endothermic peak.  相似文献   

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