Influence of H2S concentration on the properties of Cu2ZnSnS4 thin films and solar cells prepared by sol-gel sulfurization

Cu₂ZnSnS₄ (CZTS) thin films prepared by a non-vacuum process based on the sulfurization of precursor coatings, consisting of a sol-gel solution of Cu, Zn, and Sn, under H₂S+N₂ atmosphere were investigated. The structure, microstructure, and electronic properties of the CZTS thin films as well as solar cell parameters were studied in dependence on the H₂S concentration. The sulfurization process was carried out at 500 °C for 1 h in an H₂S+N₂ mixed-gas atmosphere with H₂S concentrations of 3%, 5%, 10%, and 20%. As the H₂S concentration decreased from 20% to 5%, the S content of the CZTS thin films decreased. However, when the H₂S concentration was decreased below 3%, the S content of the films began to increase. A CZTS thin film prepared with an H₂S concentration of 3% had grains in the order of 1 μm in size, which were larger than those of films prepared at other H₂S concentrations. Furthermore, the most efficient solar cell, with a conversion efficiency of 2.23%, was obtained from a sample sulfurized at an H₂S concentration of 3%.     

Structure, composition and optical properties of Cu2ZnSnS4 thin films deposited by Pulsed Laser Deposition method

Polycrystalline Cu₂ZnSnS₄ (CZTS) thin films have been directly deposited on heating Mo-coated glass substrates by Pulsed Laser Deposition (PLD) method. The results of energy dispersive X-ray spectroscopy (EDX) indicate that these CZTS thin films are Cu-rich and S-poor. The combination of X-ray diffraction (XRD) results and Raman spectroscopy reveals that these thin films exhibit strong preferential orientation of grains along [1 1 2] direction and small Cu_2−xS phase easily exists in CZTS thin films. The lattice parameters and grain sizes have been examined based on XRD patterns and Atom Force Microscopy (AFM). The band gap (E_g) of CZTS thin films, which are determined by reflection spectroscopy varies from 1.53 to 1.98 eV, depending on substrate temperature (T_sub). The optical absorption coefficient of CZTS thin film (T_sub=450 °C) measured by spectroscopic ellipsometry (SE) is above 10⁴ cm⁻¹.     

Preparation and characterization of spray-deposited Cu2ZnSnS4 thin films

Thin films of Cu₂ZnSnS₄ (CZTS), a potential candidate for absorber layer in thin film heterojunction solar cell, have been successfully deposited by spray pyrolysis technique on soda-lime glass substrates. The effect of substrate temperature on the growth of CZTS films is investigated. X-ray diffraction studies reveal that polycrystalline CZTS films with better crystallinity could be obtained for substrate temperatures in the range 643-683 K. The lattice parameters are found to be a=0.542 and c=1.085 nm. The optical band gap of films deposited at various substrate temperatures is found to lie between 1.40 and 1.45 eV. The average optical absorption coefficient is found to be >10⁴ cm⁻¹.     

Chemical composition dependence of morphological and optical properties of Cu2ZnSnS4 thin films deposited by sol-gel sulfurization and Cu2ZnSnS4 thin film solar cell efficiency

The properties of Cu₂ZnSnS₄ (CZTS) thin films deposited by sol-gel sulfurization were investigated as a function of the chemical composition of the sol-gel solutions used. The chemical composition ratio Cu/(Zn+Sn) of the sol-gel solution was varied from 0.73 to 1.00, while the ratio Zn/Sn was kept constant at 1.15. CZTS films deposited using sol-gel solutions with Cu/(Zn+Sn)<0.80 exhibited large grains. In addition, the band gaps of these Cu-poor CZTS thin films were blue shifted. Solar cells with the structure Al/ZnO:Al/CdS/CZTS/Mo/soda lime glass were fabricated under non-vacuum conditions. The solar cell with the CZTS layer deposited using the sol-gel solution with Cu/(Zn+Sn)=0.80 exhibited the highest conversion efficiency of 2.03%.     

Studies on Cu2ZnSnS4 (CZTS) absorber layer using different stacking orders in precursor thin films

Cu₂ZnSnS₄ (CZTS) thin films were deposited by sputtering on glass substrates using stacked precursors. The stacked precursor thin films were prepared from Cu, SnS₂ and ZnS targets at room temperature with different stacking orders of Cu/SnS₂/ZnS/glass (A), ZnS/Cu/SnS₂/glass (B) and SnS₂/ZnS/Cu/glass (C). The stacked precursor thin films were sulfurized using a tubular rapid thermal annealing system in a mixed N₂ (95%)+H₂S (5%) atmosphere at 550 °C for 10 min. The effects of the stacking order in the precursor thin films on the structural, morphological, chemical, electrical and optical properties of the CZTS thin films were investigated. X-ray diffraction, Raman spectroscopy and X-ray photoelectron spectroscopy studies showed that the annealed CZTS thin film using a stacking order A had a single kesterite crystal structure without secondary phases, whereas stacking orders B and C have a kesterite phase with secondary phases, such as Cu_2−xS, SnS₂ and SnS. The annealed CZTS thin film using stacking order A showed a very dense morphology without voids. On the other hand, the annealed CZTS thin films using stacking orders B and C contained the volcano shape voids (B) and Sn-based secondary phases (C) on the surface of the annealed thin films. The direct band gap energies of the CZTS thin films were approximately 1.45 eV (A), 1.35 eV (B) and 1.1 eV (C).     

Fabrication and characterization of a co-fired La0.6Sr0.4Co0.2Fe0.8O3−δ cathode-supported Ce0.9Gd0.1O1.95 thin-film for IT-SOFCs

A dense membrane of Ce_0.9Gd_0.1O_1.95 on a porous cathode based on a mixed conducting La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ was fabricated via a slurry coating/co-firing process. With the purpose of matching of shrinkage between the support cathode and the supported membrane, nano-Ce_0.9Gd_0.1O_1.95 powder with specific surface area of 30 m² g⁻¹ was synthesized by a newly devised coprecipitation to make the low-temperature sinterable electrolyte, whereas 39 m² g⁻¹ nano-Ce_0.9Gd_0.1O_1.95 prepared from citrate method was added to the cathode to favor the shrinkage for the La_0.6Sr_0.4Co_0.2Fe_0.8O_3−δ. Bi-layers consisting of <20 μm dense ceria film on 2 mm thick porous cathode were successfully fabricated at 1200 °C. This was followed by co-firing with NiO–Ce_0.9Gd_0.1O_1.95 at 1100 °C to form a thin, porous, and well-adherent anode. The laboratory-sized cathode-supported cell was shown to operate below 600 °C, and the maximum power density obtained was 35 mW cm⁻² at 550 °C, 60 mW cm⁻² at 600 °C.     

Preparation of Cu(In,Ga)(S,Se)2 thin films by sequential evaporation and annealing in sulfur atmosphere

Cu(In,Ga)(S,Se)₂ thin films with high Ga/III ratio (around 0.8) were prepared by sequential evaporation from CuGaSe₂, CuInSe₂, In₂Se₃ and Ga₂Se₃ compounds and then annealing in H₂S gas atmosphere. The annealing temperature was varied from 400 to 500 °C. These samples were characterized by means of XRF, EPMA, XRD and SEM. The S/(S+Se) mole ratio in the thin films increased with increase in the annealing temperature, keeping the Cu, In and Ga contents nearly constant. The open circuit voltage increased and the short circuit current density decreased with increase in the annealing temperature. The best solar cell using Cu(In,Ga)(S,Se)₂ thin film with Ga/(In+Ga)=0.79 and S/(S+Se)=0.11 annealed at 400 °C demonstrated V_oc=535 mV, I_sc=13.3 mA/cm², FF=0.61 and efficiency=4.34% without AR-coating.     

Ba0.5Sr0.5Co0.8Fe0.2O3 − δ + LaCoO3 composite cathode for Sm0.2Ce0.8O1.9-electrolyte based intermediate-temperature solid-oxide fuel cells

A novel Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3 − δ + LaCoO₃ (BSCF + LC) composite oxide was investigated for the potential application as a cathode for intermediate-temperature solid-oxide fuel cells based on a Sm_0.2Ce_0.8O_1.9 (SDC) electrolyte. The LC oxide was added to BSCF cathode in order to improve its electrical conductivity. X-ray diffraction examination demonstrated that the solid-state reaction between LC and BSCF phases occurred at temperatures above 950 °C and formed the final product with the composition: La_0.316Ba_0.342Sr_0.342Co_0.863Fe_0.137O_3 − δ at 1100 °C. The inter-diffusion between BSCF and LC was identified by the environmental scanning electron microscopy and energy dispersive X-ray examination. The electrical conductivity of the BSCF + LC composite oxide increased with increasing calcination temperature, and reached a maximum value of ∼300 S cm⁻¹ at a calcination temperature of 1050 °C, while the electrical conductivity of the pure BSCF was only ∼40 S cm⁻¹. The improved conductivity resulted in attractive cathode performance. An area-specific resistance as low as 0.21 Ω cm² was achieved at 600 °C for the BSCF (70 vol.%) + LC (30 vol.%) composite cathode calcined at 950 °C for 5 h. Peak power densities as high as ∼700 mW cm⁻² at 650 °C and ∼525 mW cm⁻² at 600 °C were reached for the thin-film fuel cells with the optimized cathode composition and calcination temperatures.     

Development of thin film solar cell based on Cu2ZnSnS4 thin films

Cu₂ZnSnS₄ (hereafter CZTS) thin films were successfully formed by vapor-phase sulfurization of precursors on a soda lime glass substrate (hereafter SLG) and a Mo-coated one (hereafter Mo-SLG). From the optical properties, we estimate the band-gap energy of this thin film as 1.45–1.6 eV which is quite close to the optimum value for a solar cell. By using this thin film as an absorber layer, we could fabricate a new type of thin film solar cell, which was composed of Al/ZnO:Al/CdS/CZTS/Mo-SLG. The best conversion efficiency achieved in our study was 2.62% and the highest open-circuit voltage was 735 mV. These device results are the best reported so far for CZTS.     

Electrochemical performance of (Ba0.5Sr0.5)0.9Sm0.1Co0.8Fe0.2O3−δ as an intermediate temperature solid oxide fuel cell cathode

This study presents the electrochemical performance of (Ba_0.5Sr_0.5)_0.9Sm_0.1Co_0.8Fe_0.2O_3−δ (BSSCF) as a cathode material for intermediate temperature solid oxide fuel cells (IT-SOFC). AC-impedance analyses were carried on an electrolyte supported BSSCF/Sm_0.2Ce_0.8O_1.9 (SDC)/Ag half-cell and a Ba_0.5Sr_0.5Co_0.8Fe_0.2O_3−δ (BSCF)/SDC/Ag half-cell. In contrast to the BSCF cathode half-cell, the total resistance of the BSSCF cathode half-cell was lower, e.g., at 550 °C; the values for the BSSCF and BSCF were 1.54 and 2.33 Ω cm², respectively. The cell performance measurements were conducted on a Ni-SDC anode supported single cell using a SDC thin film as electrolyte, and BSSCF layer as cathode. The maximum power densities were 681 mW cm⁻² at 600 °C and 820 mW cm⁻² at 650 °C.     

Ga homogenization by simultaneous H2Se/H2S reaction of Cu-Ga-In precursor

The compositional distribution of Ga and S in Cu(InGa)(SeS)₂ films fabricated by a simultaneous selenization and sulfization process was systematically investigated. At low H₂Se/H₂S reaction temperature (490 °C), most Ga remains at the back of the film adjacent to the Mo back contact. However, the Ga/III ratios at the top and bottom of the Cu(InGa)(SeS)₂ layer monotonically increase and decrease with reaction temperatures, respectively. At T>550 °C, homogeneous distribution of elemental Ga and In through film is achieved. Further increase of the reaction temperature (e.g., T>550 °C) causes phase segregation on the surface of the Cu(InGa)(SeS)₂ film confirmed by XRD, GIXRD and EDS analysis.     

Evaluation of Sr substituted Nd2CuO4 as a potential cathode material for intermediate-temperature solid oxide fuel cells

The Nd_1.7Sr_0.3CuO₄ (NSCu) material with perovsikite-related structure was synthesized and evaluated as a new cathode for intermediate-temperature solid oxide fuel cells (IT-SOFCs). The crystal structure, thermal expansion, electrical conductivity and electrochemical performance of NSCu have been investigated by X-ray diffraction, a dilatometer, DC four-probe method, AC impedance and cyclic voltammetry (CV) techniques. The polarization resistances of NSCu cathode on Sm-doped ceria (SDC) electrolyte in air were 0.07 Ω cm², 0.24 Ω cm² and 1.60 Ω cm² at 800 °C, 700 °C and 600 °C, respectively. The results demonstrated that both impedance and CV methods are consistent with high exchange current density i₀ (390.7 mA/cm² and 76.1 mA/cm² at 800 °C and 700 °C.), making NSCu a promising cathode material for the IT-SOFCs based on doped ceria electrolytes.     

Preparation and evaluation of Cu2ZnSnS4 thin films by sulfurization of E---B evaporated precursors

By sulfurization of E---B evaporated precursors, CZTS(Cu₂ZnSnS₄) films could be prepared successfully. This semiconductor does not consist of any rare-metal such as In. The X-ray diffraction pattern of CZTS thin films showed that these films had a stannite structure. This study estimated the optical band gap energy as 1.45 eV. The optical absorption coefficient was in the order of 10⁴cm⁻¹. The resistivity was in the the order of 10⁴ Ω cm and the conduction type was p-type. Fabricated solar cells, Al/ZnO/CdS/CZTS/Mo/Soda Lime Glass, showed an open-circuit voltage up to 400 mV.     

A novel one-step electrodeposition to prepare single-phase CuInS2 thin films for solar cells

Copper indium disulfide (CuInS₂) thin films have been successfully prepared on Ni substrates using a novel one-step potentiostatic electrodeposition combined with a potassium hydrogen phthalate (C₈H₅KO₄) complexing agent, accompanied by annealing at 350 °C. Electrodeposition in the solution of Cu and In salts and sodium thiosulfate (Na₂S₂O₃) containing an adequate concentration of C₈H₅KO₄ (e.g., [C₈H₅KO₄]=23 mM) provides thin films comprised of a CuInS₂ single phase as the bulk composition, without forming Cu_xS secondary phases. In addition to the effect on bulk-phase compositions, the adjustment of [C₈H₅KO₄] causes variation in morphology and atomic composition of the film surface. The surface states of the films change from the Cu-rich rough surface at low [C₈H₅KO₄] (15 mM) to the In-rich smooth surface at high [C₈H₅KO₄] (23 mM). The higher [C₈H₅KO₄] induces the grains constructing the film to interconnect and form a densely packed CuInS₂ film without voids and pinholes. The single-phase and void-free CuInS₂ film shows a band gap of 1.54 eV, satisfying the requirement of the absorber layers in solar cells. The electrical properties tests denote its n-type conductivity with a resistivity of 9.6×10⁻⁵ Ω cm, a carrier concentration of 2.9×10²¹ cm⁻³ and a carrier mobility of 22.2 cm² V⁻¹ s⁻¹.     

In situ high temperature neutron powder diffraction study of La2Ni0.6Cu0.4O4+δ in air: Correlation with the electrical behaviour

The knowledge of the thermal evolution of the crystal structure of a cathode material across the usual working conditions in solid oxide fuel cells is essential to understand not only its transport properties but also its chemical and mechanical stability in the working environment. In this regard, high-resolution neutron powder diffraction (NPD) measurements have been performed in air from 25 to 900 °C on O₂-treated (350 °C/200 bar) La₂Ni_0.6Cu_0.4O_4+δ. The crystal structure was Rietveld-refined in the tetragonal F4/mmm space group along all the temperature range. The structural data have been correlated with the transport properties of this layered perovskite. The electrical conductivity of O₂-treated La₂Ni_0.6Cu_0.4O_4+δ exhibits a metal (high T)-to-semiconductor (low T) transition as a function of temperature, displaying a maximum value of 110 S cm⁻¹ at around 450 °C. The largest conductivity corresponds, microscopically, to the shortest axial Ni–O2 distance (2.29(1) Å), revealing a major anisotropic component for the electronic transport. We have also performed a durability test at 750 °C for 560 h obtaining a very stable value for the electrical conductivity of 87 S cm⁻¹. The thermal expansion coefficient was 12.8 × 10⁻⁶ K⁻¹ very close to that of the usual SOFC electrolytes. These results exhibit La₂Ni_0.6Cu_0.4O_4+δ as a possible alternative cathode for IT-SOFC.     

Electrochemical performance of La1.6Sr0.4NiO4-Ag composite cathodes for intermediate-temperature solid oxide fuel cells

La_1.6Sr_0.4NiO₄-Ag (LSN-Ag) composite cathodes are prepared and characterized by XRD and SEM, respectively. The electrochemical properties of the composite cathodes are investigated using AC impedance and DC polarization methods from 500 to 700 °C under different oxygen partial pressures. The polarization resistance (R_p) decreases with the increase of Ag content in the composite electrode. The addition of 5 vol.% Ag in LSN results in the lowest R_p of 0.21 Ω cm² at 700 °C in air. Oxygen partial pressure dependence study indicates that the charge transfer process is the reaction rate limiting step, while the diffusion process has no sensitive to the Ag loading. LSN-5Ag cathode exhibits the lowest overpotential of about 32 mV at a current density of 144 mA cm⁻² at 700 °C in air.     

Comparative study of Cu2ZnSnS4 film growth

We fabricated Cu₂ZnSnS₄ (CZTS) thin films using two different methods, spray pyrolysis and sulfurization of Cu-Zn-Sn metallic films. Spray pyrolysis was carried out under air ambient with modified ultrasonic spray system. Sulfurizations of metallic Cu-Zn-Sn films were done for stacked metallic films, Cu/Sn/Zn/glass, Cu/Sn/Cu/Zn/glass and Sn/Cu/Zn/glass, which were prepared by sputtering method in high vacuum chamber. The sprayed films were not observed to be grown well with good crystallinity, compared with CZTS films made by sulfurization of stacked metallic films. However, it was found that application of additional sulfurization to sprayed CZTS films induced great improvement of crystallinity to the level of the sulfurized metallic films. This implicates that spray pyrolysis with additional sulfurization is a good method for fabrication of CZTS films, especially as a low-cost fabrication technique. All CZTS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS) and Raman spectroscopy measurements.     

Electrochemical studies of low-temperature processed nano-crystalline LiMn2O4 thin film cathode at 55 °C

LiMn₂O₄ thin films with nano-crystals less than 100 nm were successfully grown on polished stainless steel substrates at 400 °C and 200 m Torr of oxygen by pulsed laser deposition. A maximum discharge capacity of 62.4 μAh cm⁻² μm⁻¹ cycled between 3.0 and 4.5 V with a current density of 20 μAh cm⁻² was achieved. The effect of several overdischarge cycles was negligible, and both the effect of Jahn–Teller distortion at low potentials on capacity loss and structure instability at high potentials were effectively inhibited in this nano-crystalline film, resulting in an excellent cycling stability with a very low fading rate of capacity up to 500 cycles at 55 °C.     

La substituted Sr2MnO4 as a possible cathode material in SOFC

Sr_2−xLa_xMnO_4+δ (x = 0.4, 0.5, 0.6) oxides were studied as the cathode material for solid oxide fuel cells (SOFC). The reactivity tests indicated that no reaction occurred between Sr_2−xLa_xMnO_4+δ and CGO at annealing temperature of 1000 °C, and the electrode formed good contact with the electrolyte after being sintered at 1000 °C for 4 h. The total electrical conductivity, which has strong effect on the electrode properties, was determined in a temperature range from 100 to 800 °C. The maximum value of 5.7 S cm⁻¹ was found for the x = 0.6 phase at 800 °C in air. The cathode polarization and AC impedance results showed that Sr_1.4La_0.6MnO_4+δ exhibited the lowest cathode overpotential. The area specific resistance (ASR) was 0.39 Ω cm² at 800 °C in air. The charge transfer process is the rate-limiting step for oxygen reduction reaction on Sr_1.4La_0.6MnO_4+δ electrode.     

Electrochemical performance of a solid oxide fuel cell based on Ce0.8Sm0.2O2−δ electrolyte synthesized by a polymer assisted combustion method

A polyvinyl alcohol assisted combustion synthesis method was used to prepare Ce_0.8Sm_0.2O_2−δ (SDC) powders for an intermediate temperature solid oxide fuel cell (IT-SOFC). The XRD results showed that this combustion synthesis route could yield phase-pure SDC powders at a relatively low calcination temperature. A thin SDC electrolyte film with thickness control was produced by a dry pressing method at a lower sintering temperature of 1250 °C. With Sm_0.5Sr_0.5Co₃-SDC as the composite cathode, a single cell based on this thin SDC electrolyte was tested from 550 to 650 °C. The maximum power density of 936 mW cm⁻² was achieved at 650 °C using humidified hydrogen as the fuel and stationary air as the oxidant.