A broad-band MQW semiconductor optical amplifier with high saturation output power and low noise figure

A broad-band semiconductor optical amplifier (SOA) that achieves both a high chip saturation output power and a low chip noise figure (NF) was developed by using a thin multiquantum well with low internal loss. The SOA exhibited a high chip saturation output power of >+19.6 dBm and a low chip NF of <4.5 dB over a 3-dB gain bandwidth of 120 nm (1450-1570 nm). For the amplification of optical signals modulated at 40-Gb/s nonreturn-to-zero format, a penalty-free amplification was confirmed up to an average chip output power of +18.1 dBm.     

采用半导体光放大器的多波长光纤环形激光器

报道了一种插入马赫-曾德尔(M-Z)光纤干涉仪的半导体光放大器(SOA)多波长光纤环形激光器,实现了信道间隔为100 GHz的稳定的多波长连续光激射,其输出光谱3 dB带宽为19.5 nm,消光比大于30 dB.其中在17.9 nm范围内获得了22个波长的连续光,功率不平坦度为1.2 dB,总输出功率为5.1 dBm.对该结构的多波长激光器输出光谱宽,不同波长间功率波动小的特性进行了分析,提出在较低环腔损耗下,半导体光放大器的增益饱和及四波混频(FWM)效应的共同作用使环腔内多波长光功率获得自动均衡;并对实验观测到的激光器输出光谱带宽及中心波长随半导体光放大器驱动电流降低或环腔损耗增大而减小的现象进行了讨论.     

High-gain mode-adapted semiconductor optical amplifier with12.4-dBm saturation output power at 1550 nm

A mode-adapted semiconductor optical amplifier (SOA) has been fabricated and packaged. At the gain peak, 1500 nm, the fiber to fiber gain was measured to be 32.5 dB. Statistics for eight packaged devices indicate that a fiber-to-fiber gain of 26.3 dB ± 1.3 dB and a saturation output power of 12.4 dBm ± 0.4 dBm are typical at a bias of 500 mA for λ = 1550 nm. Polarization sensitivity at 1550 nm was measured to be 1.1 dB ± 0.4 dB and the transverse electric (TE) polarization state noise figure (NF) was determined to be 7.0 dB ± 0.5 dB. The coupling loss was 1.3 dB ± 0.1 dB per facet. This SOA, with a 1.3-nm filter, was used as an optical preamplifier in a 10-Gb/s return-to-zero (RZ) system testbed with a pseudorandom binary sequence (PRBS) of 2³¹ -1. A 14.5-dB improvement in receiver sensitivity was observed at a bit error rate (BER) of 10^-11     

Fabrication and characterization of 1 550 nm polarization-insensitive semiconductor optical amplifiers

Semiconductor Optical Amplifiers (SOAs) can beused asin-line amplifier ,preamplifier ,optical switch,andwavelength converter in future optical systems[1-3].Po-larization-independent gain,high output power and lowgain ripple are desirable features for most…     

AlGaInAs-InP材料系1550nm偏振无关半导体光放大器

采用低压金属有机气相外延设备生长并制作了1550nm AlGaInAs-InP偏振无关半导体光放大器,有源区为3周期的张应变量子阱结构,应变量为-0.40%.器件制作成脊型波导结构,并采用7°斜腔结构以有效抑制腔面反射.经蒸镀减反膜后,半导体光放大器的自发辐射功率的波动小于0.3dB,3dB带宽为56nm.半导体光放大器小信号增益近20dB,带宽大于55nm.在1500～1590nm波长范围内偏振灵敏度小于0.8dB,峰值增益波长的饱和输出功率达7.2dBm.     

高增益偏振不灵敏InGaAs/InP体材料半导体光放大器

采用三元InGaAs体材料为有源区，通过直接在InGaAs体材料中引入0．20％张应变来加强TM模的增益，研制了一种适合于作波长变换器的偏振不灵敏半导体光放大器(SOA)。在低压金属有机化学气相外延(LPMOVPE)的过程中，只需调节三甲基Ga的源流量便可获得所要求的张应变量。制作的半导体光放大器在200mA的注入电流下，获得了50nm宽的3dB光带宽和小于0．5dB的增益抖动；重要的是，半导体光放大器能在较大的电流和波长范围里实现小于1．1dB的偏振灵敏度。对于1．55gm波长的信号光，在200mA的偏置下，其偏振灵敏度小于1dB，同时获得了大于14dB光纤到光纤的增益，3dBm的饱和输出功率和大于30dB的芯片增益。用作波长变换器，可获得较高的波长变换效率。进一步提高半导体光放大器与光纤的耦合效率，可得到性能更佳的半导体光放大器。     

An ultrawide-band semiconductor optical amplifier having an extremely high penalty-free output power of 23 dBm achieved with quantum dots

A semiconductor optical amplifier (SOA) having a gain of >25 dB, noise figure of <5 dB, and 3-dB saturation output power of >19 dBm, over the record widest bandwidth of 90 nm among all kinds of optical amplifiers, and also having a penalty-free output power of 23 dBm, the record highest among all the SOAs, was realized by using quantum dots.     

4$,times,$25-Gb/s 40-km PHY at 1310 nm for 100 GbE Using SOA-Based Preamplifier

We present extensive numerical simulations of an optical link deploying four electroabsorption modulated lasers (EMLs) at 25 Gb/s over up to 40 km of standard single-mode fiber. The receiver comprises a semiconductor optical amplifier (SOA) as a preamplifier. We analyze the bit error ratio (BER) along different link lengths under varying conditions such as output power and extinction ratio of the EML transmitters, the noise figure of the SOA preamplifier and the bit and word alignment of the four wavelength channels. We demonstrate that the EML transmitters require a minimum extinction ratio of 8 to 10 dB and a minimum output power of +2 to +4 dBm in order to meet the BER requirements for 100 Gigabit Ethernet (100 GbE) using 4 times 25-Gb/s physical media dependent (PMD) devices. Furthermore, we show that single-channel performance analyses can be used to estimate the behavior for multichannel amplification in the SOA preamplifier.     

增益钳制掺铒光纤放大器特性研究

报道了一种新型基于环形激光腔的增益钳制掺铒光纤放大器。得到了较好的增益钳制效果和增益平坦度,利用980nm半导体激光器泵浦12m长掺铒光纤形成激光增益,观测到 30nm增益带宽。通过反馈1520nm 激光,在可变衰减器不同值测量了输入信号从- 40 ～10dBm的增益,其小信号增益被钳制在16dB。可为40个波分复用(WDM)信道波长提供增益钳制及平坦的放大功能。     

1.3μm高增益偏振无关应变量子阱半导体光放大器

采用低压金属有机化学气相外延法 (LP MOVPE)生长并制作了 1 3μm脊型波导结构偏振无关半导体光放大器 (SOA) ,有源区为基于四个压应变量子阱和三个张应变量子阱交替生长的混合应变量子阱 (4C3T)结构 ,压应变阱宽为 6nm ,应变量 1 0 % ,张应变阱宽为 11nm ,应变量 - 0 95 % ;器件制作成 7°斜腔结构以有效抑制腔面反射。半导体光放大器腔面蒸镀Ti3 O5/Al2 O3 减反 (AR)膜以进一步降低腔面剩余反射率至 3× 10 -4以下 ;在 2 0 0mA驱动电流下 ,光放大器放大的自发辐射 (ASE)谱的 3dB带宽大于 5 0nm ,光谱波动小于 0 4dB ,半导体光放大器管芯的小信号增益近 30dB ,在 12 80～ 1340nm波长范围内偏振灵敏度小于 0 6dB ,饱和输出功率大于 10dBm ,噪声指数 (NF)为 7 5dB。     

Wavelength and power dependence of injected C-band laser on pumpconversion efficiency of L-band EDFA

The effect of wavelength and power of an injected C-band laser on the pump conversion efficiency of a L-band erbium-doped fiber amplifier was studied via numerical simulation and experiment. In the studied C-band wavelength range of 1530-1560 nm, for higher injected power with longer wavelength, the backward output amplified spontaneous emission power is compressed more; but the residual laser power is greater due to the smaller emission coefficient at longer wavelength. Thus there is a best choice for injection wavelength and power. With an injection of -2 dBm at 1550 nm, 4.3 and 2.5 dB of gain enhancement for -12 and -2.6 dBm input at 1586 nm were achieved, respectively     

1.55 μm polarisation independent semiconductor optical amplifierwith 25 dB fiber to fiber gain

Using a tapered in width square active waveguide and bulk InGaAsP/InP material we demonstrate a polarisation independent amplifier structure operating at 1550 nm with a reduced far-field divergence. Improvement of coupling efficiency enables us to achieve a 25 dB fiber to fiber gain together with 9 dBm fiber saturation output power for 150 mA bias current. A 200 ps gain recovery time allows fast gating or wavelength conversion     

Gain-shifted dual-wavelength-pumped thulium-doped fiber amplifierfor WDM signals in the 1.48-1.51-μm wavelength region

We constructed a gain-shifted dual-wavelength-pumped (1.05/1.56 μm) thulium doped fiber amplifier (TDFA) for wavelength-division-multiplexing (WDM) signals in the 1.48-1.51-μm, wavelength region. We obtained a gain of larger than 20 dB and a noise figure of less than 7 dB in the range from 1478 to 1505 nm. Amplifier saturated output power was +20.1 dBm with an optical-to-optical conversion efficiency of 9.1% for 12-channel WDM signals. We also obtained a successful bit error rate performance for signals modulated at 10 Gb/s when the gain-shifted TDFA was used in an optical preamplifier configuration. These results confirm the feasibility of using the gain-shifted TDFA as both a booster and an optical preamplifier in WDM networks     

Low threshold tunable soliton source

An actively mode-locked erbium-fiber laser with continuous wavelength tuning over the range 1528-1565 nm has been demonstrated. A gain-saturated InGaAsP NTW semiconductor optical amplifier (SOA) is used as the active mode locking element, functioning as an amplitude modulator which provides gain and has <1 dB polarization dependence. The fiber laser is diode pumped at 1480 nm with a threshold of 6 mW, and provides pulses of 25 ps (FWHM) with a transform product of 0.4 and >12 dBm peak power     

SOA-pumped erbium-doped ASE fibre source with flattened spectrum and high power density

A spectrum-flattened two-stage amplified spontaneous emission (ASE) fibre source is proposed and experimentally demonstrated. The source is structured by an erbium-doped fibre simultaneously pumped by a 980 nm laser and a semiconductor optical amplifier (SOA) source. In the wavelength range of 1526?1563 nm, a spectrum ripple of ±0.5 dB and an average power density of 214 dBm/0.1 nm are achieved.     

Fluoride-based erbium-doped fiber amplifier with inherently flat gain spectrum

We successfully developed a fluoride-based Er/sup 3+/-doped fiber amplifier (F-EDFA). An average signal gain of 26 dB was achieved for 8 channel wavelength division multiplexed (WDM) signals in the 1532-1560 nm wavelength region with a gain excursion of less than 1.5 dB at an input signal power of -20 dBm per channel. Furthermore, we studied the amplification characteristics of the F-EDFA for WDM signals. The following experimental results were obtained. (1) For an 8-channel WDM signal in the 1532 to 1560 nm wavelength region, the gain excursion between channels can be suppressed to within 1.5 dB. However, the wavelength region allowing a gain excursion of 1.5 dB, is between 1536-1560 nm for the silica-based Er/sup 3+/-doped fiber amplifier. (2) F-EDFAs have a flat gain region between 1534-1542 nm. The gain excursion of this region is less than 0.2 dB for WDM signals.     

Comparison between regenerative-feedback and cofeedback gain-clamped EDFA

The erbium-doped fiber amplifier (EDFA) with regenerative feedback is compared with the cofeedback scheme. Without the bandpass filter, the injected signal experiences regenerative amplification and results in a higher signal gain. Such an above-threshold regenerative amplifier also exhibits a lower noise figure due to a higher inversion for the transition corresponding to the signal wavelength of 1550 nm. A near quantum-limited noise figure of 3.1 dB is achieved at the maximum pump power of 134.5 mW, showing nearly complete inversion at the EDF input end in the regenerative-feedback scheme. A low (<10/sup -10/) bit-error rate has been achieved with saturation input signal power above -12 dBm.     

Quantum-Dot Semiconductor Optical Amplifiers

This paper reviews the recent progress of quantum-dot semiconductor optical amplifiers developed as ultrawideband polarization-insensitive high-power amplifiers, high-speed signal regenerators, and wideband wavelength converters. A semiconductor optical amplifier having a gain of > 25 dB, noise figure of < 5 dB, and 3-dB saturation output power of > 20 dBm, over the record widest bandwidth of 90 nm among all kinds of optical amplifiers, and also having a penalty-free output power of 23 dBm, the record highest among all the semiconductor optical amplifiers, was realized by using quantum dots. By utilizing isotropically shaped quantum dots, the TM gain, which is absent in the standard Stranski-Krastanow QDs, has been drastically enhanced, and nearly polarization-insensitive SOAs have been realized for the first time. With an ultrafast gain response unique to quantum dots, an optical regenerator having receiver-sensitivity improving capability of 4 dB at a BER of 10^-9 and operating speed of > 40 Gb/s has been successfully realized with an SOA chip. This performance achieved together with simplicity of structure suggests a potential for low-cost realization of regenerative transmission systems.     

Fabrication of Butt‐Coupled SGDBR Laser Integrated with Semiconductor Optical Amplifier Having a Lateral Tapered Waveguide

We have demonstrated a high‐power widely tunable sampled grating distributed Bragg reflector (SGDBR) laser integrated monolithically with a semiconductor optical amplifier (SOA) having a lateral tapered waveguide, which is the first to emit a fiber‐coupled output power of more than 10 dBm using a planar buried heterostructure (PBH). The output facet reflectivity of the integrated SOA using a lateral tapered waveguide and two‐layer AR coating of TiO₂ and SiO₂ was lower than 3 × 10^?4 over a wide bandwidth of 85 nm. The spectra of 40 channels spaced by 50 GHz within the tuning range of 33 nm were obtained by a precise control of SG and phase control currents. A side‐mode suppression ratio of more than 35 dB was obtained in the whole tuning range. Fiber‐coupled output power of more than 11 dBm and an output power variation of less than 1 dB were obtained for the whole tuning range.     

High-gain, high-power 1.3 μm compressive strained MQW opticalamplifier

A high-gain and high-saturation output power optical amplifier operating in the 1.3-μm wavelength region that was fabricated using a compressive-strained multiple-quantum-well active region is described. It is shown that optical gain as high as 27 dB and 3-dB saturation output power as high as 14 dBm were obtained simultaneously