Design and consideration of wafer level micropackaging for distributed RF MEMS phase shifters

A novel packaging structure which is performed using wafer level micropackaging on the thin silicon substrate as the distributed RF MEMS phase shifters wafer with vertical feedthrough is presented. The influences of proposed structure on RF performances of distributed RF MEMS phase shifters are investigated using microwave studio (CST). Simulation results show that the insertion loss (S₂₁) and return loss (S₁₁) of packaged MEMS phase shifters are −0.4–1.84 dB and under −10 dB at 1–50 GHz, respectively. Especially, the phase shifts have well linear relation at the range 1–48 GHz. At the same time, this indicated that the proposed pacakaging structure for the RF MEMS phase shifter can provide the maximum amount of linear phase shift with the minimum amount of insertion loss and return loss of less than −10 dB.     

A novel design of RF MEMS dual band phase shifter

In this paper a novel design of RF MEMS dual band phase shifter is presented. The new design is switched-line type phase shifter which has been constructed by distributed MEMS transmission line (DMTL). Since the constant phase of DMTL can be changed, the proposed design has capability for working at two or more frequencies. The performances of the new design are compared with conventional switched-line design that has been constructed by transmission line of coplanar waveguide. The results show the feasibility of the new design and also show the new design reduces the size and loss of the structure compared with conventional switched-line design. The proposed design is unique approach to achieve a dual band phase shifter using MEMS technology which has low loss and weight with high linearity respect to the other technologies. This dual band phase shifter has very small size than the other passive dual band phase shifters.     

MEMS variable‐capacitor phase shifters part I: Loaded‐line phase shifter

This article describes the design and characterization of a continuously variable loaded‐line phase shifter using micro‐electro‐mechanical system (MEMS) variable capacitors as phase shifting components. The design and characterization of micro‐electro‐mechanical system (MEMS) variable capacitors for operation at 26.5 GHz is described. A lumped‐element model is obtained from measurements and physical consideration. Experimental results show a capacitance‐tuning ratio of 3.7:1. The capacitor's characterization results are used for designing the phase shifter. A phase shift of 40.5° at 26.5 GHz for a loaded‐line type has been measured. There is good agreement between simulated and measured results. A companion article (Part II) describes the application of these variable capacitors to the design of reflection‐type phase shifters. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 321–337, 2003.     

MEMS variable‐capacitor phase shifters part II: Reflection‐type phase shifters

A novel design procedure for reflection‐type phase shifters using capacitive devices is developed. Using this approach, a phase shifter for operation at 26.5 GHz is developed using MEMS variable capacitors reported in Part I of this article. A design optimization procedure is discussed. Design of a CPW hybrid at 26.5 GHz (as needed for this phase shifter) is also discussed. Experimental results validate the design procedure and yield a phase shift of 179.30° at 26.5 GHz. © 2003 Wiley Periodicals, Inc. Int J RF and Microwave CAE 13: 415–425, 2003.     

A low cost approach for the fabrication of microwave phase shifter on laminates

This paper presents a simple and low cost fabrication approach using extended printed circuit board processing techniques for an electrostatically actuated phase shifter on a common microwave laminate. This approach uses 15 μm thin copper foils for realizing the bridge structures as well as for a spacer. A polymeric thin film deposited by spin coating and patterned using lithographic process is used as a dielectric layer to improve the reliability of the device. The prototype of the phase shifter for X-band operation is fabricated and tested for electrical and electromechanical performance parameters. The realized devices have a figure of merit of 70°/dB for a maximum applied bias potential of 85 V. Since these phase shifters can be conveniently fabricated directly on microwave substrates used for feed distribution networks of phased arrays, the overall addition in cost, dimensions and processing for including these phase shifters in these arrays is minimal.

     

Differential phase shifters based on Schiffman type‐C and type‐F networks with wide phase shift range

This study proposes a class of differential phase shifters based on the Schiffman type‐C and type‐F networks with wide phase shift range. After the phase and bandwidth properties of these two distinct networks are numerically analyzed, two unique advantages of wide phase shift range and wide phase shift bandwidth are revealed. Next, the optimal design parameters for different phase shift values up to 405° are presented to allow for a quick design process. To verify the proposed approach, a 180° differential phase shifter is designed, fabricated and measured. Good performance is achieved with an impedance ratio of 1.959 and 3.7° phase deviation over a phase shift bandwidth of 61%.     

Wideband filtering balun power dividers using modified Schiffman phase shifter

Two novel wideband bandpass filtering balun power dividers using modified Schiffman phase shifter are proposed in this article. Two types of wideband Wilkinson power dividers are adopted, respectively, in the two structures for wide passband. The Schiffman phase shifters are used in the structures for realizing 180° phase shift between output ports modified by connecting each of them with a short‐ended stub for weak coupling coefficient. In addition, two transmission zeros are realized by an open‐ended stub connected in parallel at the input port to realize the filtering characteristic. To verify the proposed structures, two wideband bandpass filtering balun power dividers (εr = 3.66,h = 0.762 mm, tanδ = 0.004) centering at 2GHz are designed and fabricated. The simulated and measured results are discussed.     

Notice of Violation of IEEE Publication PrinciplesKa-band distributed MEMS phase shifters on silicon using AlSi suspended membrane

Notice of Violation of IEEE Publication Principles

"Both the authors and the Editor-in-Chief of Volume 13, number 3 of the IEEE/ASME JMEMS (June 2004, pp. 542-549) of the paper numbered JMEMS 1041 have agreed that this paper, "Ka-Band Distributed MEMS Phase Shifters on Silicon Using AlSi Suspended Membrane," should not have been published. The paper would have been withdrawn had this fact been discovered before the IEEE/ASME JMEMS print date for June 2004. The authors have indicated that they will work to provide a new version their paper that will be considered for publication if it is submitted in the future. For help in coming to this decision, I would like to thank those concerned individuals, including the authors, JMEMS editors, and highly respected researchers in the MEMS and microwave communities who contributed their time and consideration to help us assure the integrity of our journal."

Richard S. Muller, Editor-in-Chief, IEEE/ASME JMEMS

This paper presents the design, fabrication, and testing of distributed MEMS phase shifters for Ka-band communication systems. The phase shift can be obtained by changing MEMS bridge capacitors located periodically over the transmission line. Simulation results of phase shifters with various structural parameters are analyzed to develop the optimized designs. The phase shifters are fabricated on the high-resistivity silicon substrate, using suspended AlSi bridge membrane. The measured results demonstrate a phase shift of 286° at 36 GHz with the actuation voltage of 25 V, and a return loss better than 10 dB over 0-40 GHz band. In addition, lifetimes of 3×10/sup 6/ cycles have been achieved for the fabricated phase shifter with all MEMS bridges held to be valid. It shows that AlSi alloy has a nice compromise between strength and resilience.     

MEMS-Based Electronically Steerable Antenna Array Fabricated Using PCB Technology

In this paper, a MEMS-based electronically steerable antenna array (ESA) fabricated using printed circuit processing techniques is reported. A Kapton polyimide film is used as the structural layer for fabricating MEMS varactors. The MEMS varactors have been used in the bistable mode to design loaded- line-type MEMS phase shifters. These MEMS phase shifters have been monolithically integrated with the ESA on a Duroid substrate using printed circuit processing techniques. For proof-of-concept demonstration of the proposed MEMS-based ESA, a 3-bit MEMS phase shifter has been monolithically integrated with a two- element double-folded slot-antenna array on a Duroid substrate. An X-band ESA prototype with a beam steering angle of 20deg at 9.1 GHz is presented.     

A low cost approach for the fabrication of microwave phase shifter on laminates

This paper presents a simple and low cost fabrication approach using extended printed circuit board processing techniques for an electrostatically actuated phase shifter on a common microwave laminate. This approach uses 15???m thin copper foils for realizing the bridge structures as well as for a spacer. A polymeric thin film deposited by spin coating and patterned using lithographic process is used as a dielectric layer to improve the reliability of the device. The prototype of the phase shifter for X-band operation is fabricated and tested for electrical and electromechanical performance parameters. The realized devices have a figure of merit of 70°/dB for a maximum applied bias potential of 85?V. Since these phase shifters can be conveniently fabricated directly on microwave substrates used for feed distribution networks of phased arrays, the overall addition in cost, dimensions and processing for including these phase shifters in these arrays is minimal.     

Distributed transmission line phase shifter using MEMS switches and inductors

Distributed MEMS transmission line (DMTL) phase shifter has been developed using planar inductors. The design consists of a coplanar waveguide line capacitively and inductively loaded by the periodic set of electrostatic force actuated microelectromechanical system switches as capacitors and inductors. By applying a single bias voltage on the line, the characteristic impedance can be changed, which in turn changes the phase velocity of the line and creates a true time delay phase shift. The governing equations for the impedance and loss are derived. The ABCD matrix is defined for a unit and multi-cell DMTL phase shifter to extract scattering parameters equations. The device containing 15 cells calculated, simulated, and fabricated. Fabricated results show that the device can be considered as a new type of the DMTL phase shifter with small size, higher phase shift and acceptable scattering parameters.     

高精度磁场式时栅传感器激励信号对测量误差的影响分析及系统设计

为提高磁场式时栅传感器测量精度,本文从理论上推导分析了时栅传感器激励信号源幅值和相位不一致产生的谐波成分对时栅传感器测量精度的影响,提出了一种基于DDS原理并采用完整闭环调节的高性能时栅激励信号源设计方案。以FPGA为微处理器,通过编程分频系统时钟,设置频率、相位控制字对DDS输出的信号频率、相位进行调节,使用增益控制器配合相位累加器实现相位到幅值精确转换。搭建了信号调理电路和信号反馈电路,通过实时对比反馈控制,解决了系统电路阻抗不匹配及干扰导致的激励信号相位不正交性和幅值不一致性的问题。实验结果表明：本文所设计的激励信号源输出信号幅值相对误差只有0.4%,正交性相对误差只有0.05%,并且采用该激励信号源,磁场式时栅传感器测角原始误差从±103.4"降低到了±20.3",有效抑制由于激励信号源幅值不一致和相位不正交带来的谐波误差。经修正后对极内角位移测量误差只有±1.3",整周角位移测量精度达到±2",满足高精度位移测量要求。     

A small size Ka band six-bit DMTL phase shifter using new design of MEMS switch

Microsystem Technologies - This paper presents a new design of MEMS switch to achieve a six-bit small size and low loss DMTL phase shifter. In the proposed structure two electrodes are added to the...     

基于分布式射频MEMS移相器电容开关的分析与设计

通过分析MEMS电容开关的工作原理,设计出一种适合分布式射频MEMS移相器电路的新型电容开关.采用Intel lisuiteTM软件优化电容开关的驱动电压、响应时间、释放时间和机械振动模式.结果表明,开关驱动电压为2.5 V、响应时间小于30μs,释放时间大于60 μs和所有振动模式固有频率都大于15 KHz.与普通开关结构比较,该新型电容开关结构具有优越射频机电性能和响应时间,同时也对电容开关的制备工艺进行分析.     

高速四相时钟电路设计

基于IHP 130 nm SiGe BiCMOS工艺,设计了一个由基于RC网络相移特性的polyphase移相器和差分时钟缓冲器组成的2 GHz四相时钟电路.因单阶polyphase带宽不足而设计了三阶polyphase级联提高带宽.采用HBT(heterojuntion bipolar transistor)差分时钟缓冲取代MOS(metal oxide semiconductor)单端时钟缓冲,实现更高时钟频率的同时,差分结构也能有效抑制流入采样电容的时钟信号馈通.各模块版图设计均采用高度对称结构来消除相位误差.仿真结果表明,差分输入2 GHz正弦波时,可输出4路相位相差90°方波时钟信号,时钟上升时间约15 ps,4路时钟相位误差小于2.2°,应用到4通道采样保持电路后可成功采样和保持8 GHz正弦输入信号.     

一种仿生原理的矢量水听器结构设计与数值研究

受奥米亚棕蝇听觉系统特有结构的启发,提出一种能够测向的微机电(MEMS)矢量水听器设计思路,并进行了数值仿真研究.这种思路是利用MEMS表面牺牲层工艺设计一种微型差分电容检测水听器,可实现低频声源测向定位.利用COMSOL多物理场耦合仿真软件对水听器的模态和耦合放大效果进行了模拟仿真,结果显示在0°~180°范围,在谐振频率333Hz处,水听器差分电容敏感单元能够对声信号幅值差和相位差实现有效放大,显示出巨大的测向潜力.     

一种新型的分布式MEMS移相器的小型化设计

通过在共面波导信号线上贴敷低介电常数的薄层绝缘介质,使得MEMS金属桥与共面波导信号线在“关“态下形成MIM电容的方法,实现了提高“关““开“两种状态下的电容比,从而提高了单位长度上的相移量.与传统的设计方法相比,在达到同样相移量指标的情况下仅需少量的MEMS金属桥就可以实现,工作的可靠性得到提高,未封装MEMS移相器器件的总体尺寸可以减小60%左右,此外由于在“关“态下,金属桥直接贴敷在介质表面上而不会随着外界环境震动,因此移相器的相移精度显著的提高.     

Synthesis of frequency‐independent phase shifters using negative group delay active circuit

This article describes a synthesis method dedicated to the design of frequency‐independent phase shifters (PSs). This innovative PS structure consists in a transmission line cascaded with a negative group delay (NGD) active circuit so that the absolute constant group delays generated by both of them are identical but of opposite signs. So, in principle, it exhibits a constant overall phase and a group delay close to zero. Broadband linear positive phase slopes are obtained through use of an NGD active circuit whose characteristics are recalled prior to the extraction of the PS synthesis relations. The design and simulations of a PS of compact size are reported. The experimental results confirm the expected frequency‐independent transmission‐phase value of 145° ± 10° with an insertion gain of 2 ± 2 dB over a 160% relative frequency band. At last, future prospects allowed by the specific properties of this PS are presented. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2010.     

Reconfigurable multibeam feed network for 38 GHz application

A feed network based on substrate integrated waveguide for 38 GHz application is proposed in this article. The network consists of a 90° hybrid, a 180° hybrid, a power divider, and a switchable phase shifter. There are two input ports in the reconfigurable multibeam feed network (RMBFN) and a set of symmetrical radiation pattern will be excited by the two input ports. In addition, the other symmetrical patterns will be obtained by adjusting the different states of the switchable phase shifter. The simulated results show that the S₁₁ and S₂₂ are found to be better than ?13 dB over 37‐40 GHz. Meanwhile, the amplitude of the three output ports is about ?6.6 ± 1 dB, and the phase difference is ±60 ± 10° or ±120 ± 10°. When the proposed RMBFN feeds for an antenna array, four different beams with the main beam pointing to the ±22 ± 3° and ±43 ± 3° are obtained.     

A new active structure of high frequency wide band differential phase shifters

The design and performance of a wide band active GaAs IC 180° differential phase shifter are presented. A two-stage GaAs IC was developed containing a microwave differential amplifier and a matched common-gate input. The active phase shifter achieved a 10° phase unbalance and an isolation at the output ports of better than 10 dB in the 1-10-GHz band. A large percentage of the GaAs chip contains active devices thereby providing a very large operating bandwidth and a reduced surface area. This active phase shifter presents an interesting alternative to the passive rat-race or an equivalent coupler for radio mobile communications. © 1996 John Wiley & Sons, Inc.