ZrO_2溅射膜的柱状生长机制

气相沉积ZrO2 膜常为柱状结构 ,要更好地控制ZrO2 膜性能 ,需要研究ZrO2 膜中柱状结构的形成和演化规律 .在射频溅射条件下沉积了ZrO2 膜 ,发现该膜的柱状晶具有 { 111}面织构 ,其底层可能还有等轴晶 .提出以下柱状晶形成机制 :在光滑 (玻璃 )基片上形成的柱状晶源自于在基片表面形成的具有 { 111}面织构的最初晶核 ;在较为粗糙 (多晶Al2 O3)基片表面上形成的柱状晶源自于〈111〉晶向与沉积物质流方向一致的晶核择优生长及随后对其它取向的小晶核的吞噬而形成的晶核群 .基片表面粗糙时 ,由于柱状晶核经过晶核筛选产生 ,柱状晶底部可能有等轴晶层 ;若温度较低 ,出现等轴晶层可能性更大     

莫来石晶粒柱状生长对莫来石基陶瓷力学性能的影响

将AlF3加入莫来石(莫来石/氧化锆)先质中,生坯试样经密闭处理及常压烧结,可获得莫来石柱状晶粒生长.实验结果表明:莫来石柱状生长使莫来石陶瓷在其强度不下降的前提下,韧性提高,且随柱状晶粒粒径增大而增加有类似架桥作用.ZTM(含AlF3)材料韧性的提高是由于莫来石柱状晶粒生长使t-ZrO2形态发生了变化,具有较大长径比或有尖角的不规则形态的t-ZrO2晶粒容易发生应力诱导相变,使材料力学性能得到明显提高.     

勃姆石凝胶膜（020）面织构生长

研究发现勃姆石凝胶膜存在面织构，γ－ＡｌＯＯＨ粒子的面平行于凝胶膜的顶面。勃姆石溶胶的粘度，凝胶膜的热处理温度，膜厚对勃姆石凝胶膜的织构度有影响。溶胶的粘度越大，形成的凝胶膜的择优取向度越大；热处理温度越高，凝胶膜的择优取向度也越大，但在接近勃姆石转化为γ－氧化铝的晶型转变温度时，凝胶膜的择优取向织构度迅速降低，在晶型转变温度，γ－ＡｌＯＯＨ凝胶膜的择优取向织构现象完全消失。     

ZrO2膜中的应力

用射频溅射制备了ZrO     

ZrO2膜的相结构与显微组织

本文用X射线衍射和扫描电镜研究了ZrO2膜的晶体结构和显微组织。结果表明ZrO2膜的相结构为立方氧化锆（c-ZrO2）,晶粒尺寸细微。发现ZrO2膜中存在具有{111}面织构柱状晶结构,这种结构可用基片负偏压消除。     

柱状自生长莫来石的制备及显微结构

通过对莫来石材料的分析,设计了在莫来石先质中添加ＡｌＦ３进行密封条件下热处理,生成莫来石晶须晶种,并以其作为生长点,在以后的烧结过程中发育成为柱状颗粒,获得类昌须复合材料的显微结构的实验线路,含ＡｌＦ３莫来石先质试样密闭处理的温度条件是１１５０℃,大于这个温度处理的试样无法获得致密烧结。莫来石柱状生长条件是富铝莫来石晶粒的存在和液相的产生。本工作中经１１５０℃处理后的试样获得良好的烧结密度,材料的     

ZrO2纤维隔热板的制备

为开发体积密度小、热导率低的保温隔热材料,以Y2O3稳定Zr O2纤维和Y2O3稳定Zr O2微粉为原料,以Zr O2溶胶和淀粉溶液为结合剂,采用压滤成型工艺,经干燥、热处理制备了Zr O2纤维隔热板。并研究了Zr O2微粉加入量(其质量分数分别为5%、10%、15%、20%和25%)和热处理温度(分别为1 600、1 700、1 800和1 900℃)对其线收缩率、物相组成、显微结构及热导率的影响。结果表明:Zr O2纤维隔热板在1 700℃基本不收缩,1 800℃收缩0.98%,400℃热导率仅为0.070 W·(m·K)-1;1 800℃高温处理后,隔热板中的纤维仍保持纤维状形态,纤维晶粒明显长大,出现竹节形状;高温处理后,组成隔热板的晶相为立方相结构,没有出现其他晶相。     

双离子束溅射非晶SiOxNy薄膜的光致发光研究

采用双离子束溅射法制备了SiOxNy薄膜,用X射线衍射分析(XRD),透射电子显微镜(TEM),X射线光电子能谱(XPS),傅立叶变换红外(FTIR)等对薄膜的结构进行了表征,分析了样品的光致发光(PL)特性。X射线衍射(XRD),透射电子显微镜(TEM)结果表明该薄膜具有非晶结构。XPS测试表明N1s的特征峰位于398eV,对应于N-Si键。在光吸收谱中,与Si-SiO2薄膜相比,SiOxNy的光学带隙得到展宽。在225nm的激光激发下,样品在室温下可发射可见光,峰位位于590nm,与N的缺陷有关。     

Growth and Characterization of Tungsten Oxide Thin Films using the Reactive Magnetron Sputtering System

WO₃ thin film is one of the most important and applied metal oxide semiconductors that have attracted the scientist’s attention in recent decades. WO₃ thin films by two different methods: reactive and non-reactive RF magnetron sputtering deposited on soda lime glass. The effect of presence and absence of oxygen gas in system and RF power on structural, morphological and optical properties of thin films were investigated. The XRD analysis of the films shows the amorphous structure. Spectrophotometer analysis and calculation show that the optical properties of reactive sputtered layers were better than the non-reactive sputtered thin films. By changing deposition parameters, over 70 % transmission achieved for WO₃ films. The results showed that reactive sputtering method improved the optical properties of layers and increased band gap up to 3.49 eV and on the other hand reduced roughness of thin films. On the whole, presence of oxygen in the chamber during sputtering improved properties of WO₃ thin films.     

Characterization of Co/ZrO2 de-NOX Thin Film Catalysts Prepared by Magnetron Sputtering

This paper reports the preparation and characterization of Co/ZrO₂ thin film catalysts. ZrO₂ thin films (S_BET～25 m² g^-1) have been prepared at low temperature by magnetron sputtering. This procedure is typically used to get compact thin films and has been modified to prepare porous catalyst layers. The obtained results prove that this can be an interesting alternative for catalyst shaping of interest for different applications. Incorporation on the zirconia support of a well-dispersed cobalt phase is achieved by electrochemical and wetness impregnation methods. Catalyst thin films deposited on stainless-steel plates have been characterized by SEM and XPS. BET measurements, carried out according to a special procedure, have been used to determine the specific surface area of the thin film catalysts. Catalytic tests for NO (1000?ppm) reduction with CH₄ or C₃H₈ (2500 ppm) in the presence or absence of O₂ (3%;) in the reactant flow show that the thin film catalyst depicts a similar catalytic behavior than a Co/ZrO₂ powder catalyst prepared by conventional methods. The results can be summarized as follows: (i) with CH₄ in the absence of O₂, a maximum of 50% reduction of NO to N₂ was obtained at 823 K; (ii) a similar conversion was obtained at 623 K when O₂ was present in the reaction flow; (iii) with C₃H₈ a 90%; conversion was obtained at 823 K without O₂, while no conversion at all was detected in the presence of O₂, although 90%; of the hydrocarbon was oxidized to CO₂ and H₂O at this temperature. The advantages and possibilities of using non-conventional methods of synthesis of thin film catalysts are highlighted.     

Low Vacuum Deposition of Aluminum Nitride Thin Films by Sputtering

Conventionally, sputtering deposition of thin films requires a low base pressure (high vacuum) to minimize influences of residual gases. Here, a high base pressure (low vacuum) was used, which can reduce significantly the overall processing time. Aluminum nitride ( AlN ) was selected as a model system of dielectric nitrides. All the analyses revealed that the obtained films under a low vacuum environment within specific processing windows exhibited characteristics similar to those of high‐vacuum made AlN films. Such a low vacuum deposition technique takes advantages of kinetically favorable formation of the nitride films and hence, has great potentials in many more technological applications.     

Optical and Structural Properties of TiO2 Thin Films Deposited by RF Magnetron Sputtering

Silicon - Titanium dioxide thin films were grown by RF magnetron sputtering. After that, deposited TiO2 films were annealed at 300 °C for 2 h. Having used different oxygen flow rates as a...     

磁控溅射法制备纳米Cu薄膜及其微结构的研究

采用磁控溅射法制备出以ITO为基底的纯Cu薄膜,考察溅射时间和基底温度等工艺条件对生长Cu薄膜的影响.用电子扫描显微镜(SEM)、X射线衍射仪(XRD)对薄膜的形貌、厚度和结构进行表征.实验结果表明:在一定范围内调控衬底温度和溅射时间,可获得不同形貌、尺寸和厚度的Cu薄膜,所得薄膜的晶体结构为面心立方结构,均沿(111...     

磁控溅射制备Cu2ZnSnS4薄膜太阳电池

为解决硫化过程中Sn元素损失的问题以及减少MoS2的厚度,采用磁控溅射技术,在基于钼的钠钙玻璃衬底上采用双周期溅射的方法,以ZnO/SnO2/Cu的顺序制备了含氧的Cu-Zn-Sn预制层.结果表明:SnO2以及ZnO的使用很好的抑制了Sn元素的损失以及MoS2层的形成,而且在590℃的硫化温度下能制备出表面平整、晶粒致...     

射频磁控溅射制备PZT铁电薄膜的工艺研究

在SiO2/Si基片上采用直流对靶溅射技术制备出Pt/Ti底电极;应用射频磁控溅射方法,利用快速热处理(RTA)工艺,制备出了具有良好铁电性能的Pb(Zr0.52Ti0.48)O3铁电薄膜.将样品进行10min快速热退火处理,退火温度700℃.测试分析表明:薄膜厚度比较均匀、表面基本平整、没有裂纹和孔洞、致密性好、薄膜样品的矫顽场强(Ec)为28.6kV/cm,剩余极化强度(Pr)为18.7μC/cm2,自发极化强度(Ps)为37.5μC/cm2,是制备铁电薄膜存储器的优选材料.     

Preparation of Nanostructured ZnO Thin Films Using Magnetron Sputtering for the Gas Sensors Applications

ZnO is one of the most promising transparent conducting oxide materials, which widely used in thin film gas sensors. In this research, the dependence of the thermal oxidation time on structural, morphological and gas sensing properties of ZnO thin films is investigated. ZnO nanostructures are synthesized by using DC magnetron sputtering for deposition of pure zinc layers on glass substrates and then thermal oxidation of deposited zinc layers to produce zinc oxide (ZnO) thin films. Obtained results from X-ray diffraction revealed that the degree of crystallinity and the average grain size of the ZnO deposited thin films enhance with increasing the thermal oxidation time. Surface topography and growth behavior of ZnO thin films have important role in optimization of gas sensing properties of these films. In this study, scanning electron microscopy and atomic force microscopy have been used to investigate the effective parameters related to the surface topography of the films. Obtained results from these analyzes revealed that the surface topography of ZnO deposited samples strongly depend on thermal oxidation time. Also the effect of thermal oxidation time on the performance of ZnO gas sensors is investigated. The results indicated that the ethanol gas sensing properties of ZnO samples improve with decreasing the size of grains.     

低含量铁掺杂纳米TiO_2薄膜的制备及其抗菌机理研究

采用溶胶凝胶-浸渍提拉法,制备了玻璃基底上生长的Fe/TiO2薄膜.利用XRD、XPS、AFM等对样品进行表征,研究了铁掺杂对TiO2薄膜晶体结构和表面形貌的影响,并研究了不同掺铁量TiO2薄膜对大肠杆菌的抗菌性能.结果表明,铁掺杂TiO2薄膜的抗菌性能均优于纯TiO2薄膜,其中掺铁量为0.1%时薄膜的抗菌性能最佳,高达98%.     

工艺因素对磁控溅射法制备钛酸锶钡薄膜性能的影响

磁控溅射技术在薄膜制备领域有着广泛的应用.本文在介绍磁控溅射法制备薄膜材料的基本原理和流程基础之上,详细分析了溅射工艺参数(溅射功率、温度、溅射气压、氧分压)对BST薄膜性能的影响,并提出了研究中需要解决的一些问题.