Microstructure and tribological properties of ternary BCN thin films with different carbon contents

Boron carbon nitrogen (BCN) thin films with different carbon contents are deposited on high-speed steel substrates by reactive magnetron sputtering (RMS) and their microstructure and tribological properties are studied. The BCN films with carbon contents from 26.9 wt.% to 61.3 wt.% have an amorphous structure with variable amounts of carbon bonds (sp²C–C, sp²C–N and sp³C–N bonds). A higher carbon content enhances the film hardness but reduces the friction coefficient against GCr15 steel balls in air. BCN films with higher hardness, lower friction coefficient, and better wear resistance can be obtained by increasing the carbon content.     

Tribological study of amorphous BC4N coatings

Amorphous BC₄N thin films with a thickness of ∼ 2 μm have been deposited by Ion Beam Assisted Deposition (IBAD) on hard steels substrates, in order to study the wear behavior under high loads and the applicability as protective coatings. The bonding structure of the a-BC₄N film was assessed by X-ray Absorption Near Edge Spectroscopy (XANES) and Infrared Spectroscopy, indicating atomic mixing of B–C–N atoms, with a proportion of ∼ 70% sp² hybrids and ∼ 30% sp³ hybrids. Nanoindentation shows a hardness of ∼ 18 GPa and an elastic modulus of ∼ 170 GPa. A detailed tribological study is performed by pin-on-disk tests, combined with spectromicroscopy of the wear track at the coating and wear scar at pin. The tests were performed at ambient conditions, against WC/Co counterface balls under loads up to 30 N, with the sample rotating at 375 rpm. The coatings suffer a continuous wear, at a constant rate of 2 × 10^− 7 mm³/Nm, without catastrophic failure due to film spallation, and show a coefficient of friction of ∼ 0.2.     

Structure and mechanical properties of oxygen doped diamond-like carbon thin films

In this study, structure and mechanical properties of doped diamond-like carbon (DLC) films with oxygen were investigated. A mixture of methane (CH₄), argon (Ar) and oxygen (O₂) was used as feeding gas, and the RF-PECVD technique was used as a deposition method. The thin films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy (RS), attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) and a combination of elastic recoil detection analysis and Rutherford backscattering (ERDA-RBS). Nano-indentation tests were performed to measure hardness. Also, the residual stress of the films was calculated by Stoney equation. The XPS and ERDA-RBS results indicated that by increasing the oxygen in the feeding gas up to 5.6 vol.%, the incorporation of oxygen into the films' structure was increased. The ratio of sp² to sp³ sites was changed by the variation of oxygen content in the film structure. The sp²/sp³ ratios are 0.43 and 1.04 for un-doped and doped DLC films with 5.6 vol.% oxygen in the feeding gas, respectively. The Raman spectroscopy (RS) results showed that by increasing the oxygen content in doped DLC films, the amount of sp² CC aromatic bonds was raised and the hydrogen content reduced in the structure. The attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) confirmed the decrease of hydrogen content and the increase the ratio of CC aromatic to olefinic bonds. Hardness and residual stress of the films were raised by increasing the oxygen content within the films' structure. The maximum hardness (19.6 GPa) and residual stress (0.29 GPa) were obtained for doped DLC films, which had the maximum content of oxygen in structure, while the minimum hardness (7.1 GPa) and residual stress (0.16 GPa) were obtained for un-doped DLC films. The increase of sp³ CC bonds between clusters and the decrease of the hydrogen content, with a simultaneous increase of oxygen in the films' structure is the reason for increase of hardness and residual stress.     

X-ray photoemission spectroscopy of nitrogen-doped UNCD/a-C:H films prepared by pulsed laser deposition

Nitrogen-doped ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) films were deposited by pulsed laser deposition (PLD). Nitrogen contents in the films were controlled by varying a ratio in the inflow amount between nitrogen and hydrogen gases. The film doped with a nitrogen content of 7.9 at.% possessed n-type conduction with an electrical conductivity of 18 Ω^? 1 cm^? 1 at 300 K. X-ray photoemission spectra, which were measured using synchrotron radiation, were decomposed into four component spectra due to sp², sp³ hybridized carbons, C=N and C–N. A full-width at half-maximum of the sp³ peak was 0.91 eV. This small value is specific to UNCD/a-C:H films. The sp²/(sp³ + sp²) value was enhanced from 32 to 40% with an increase in the nitrogen content from 0 to 7.9 at.%. This increment probably originates from the nitrogen incorporation into an a-C:H matrix and grain boundaries of UNCD crystallites. Since an electrical conductivity of a-C:H does not dramatically enhance for this doping amount according to previous reports, we believe that the electrical conductivity enhancement is predominantly due to the nitrogen incorporation into grain boundaries.     

High-density plasma chemical vapor deposition of amorphous carbon films

This work investigated the influence of the plasma parameters pressure and RF power on the characteristics of amorphous carbon films deposited by high-density plasma chemical vapor deposition, using inductively coupled methane plasmas. These films show several good electrical characteristics: high resistivity, low dielectric constant and high breakdown field. After deposition, the films were characterized as follows: the thickness was measured with a step height meter and an ellipsometer; Fourier transform infrared spectroscopy was used to identify the sp² and sp³ hybridization of C and CH bonds and other possible bonds that can appear because of the hydrogen presence; atomic force microscopy was used to measure the film roughness and I–V and C–V measurements to determine the dielectric constant, the electric resistivity and the breakdown electric field. The films deposited with high-density plasmas showed good characteristics for several applications, when compared to deposition with conventional RF plasmas. These films show a better structural quality with a high sp³ to sp² ratio. Even with this high sp³ to sp² ratio, the RMS surface roughness of an approximately 300 nm thick film was only 0.24 nm. For microelectronic applications, a very low dielectric constant of only 1.68 and a high resistivity of 1.5×10¹⁴ Ω cm were obtained.     

Deposition of hard amorphous hydrogenated carbon films by radiofrequency parallel-plate hollow-cathode plasmas

Hard amorphous hydrogenated carbon (a-C:H) films were deposited by plasma decomposition of CH₄ gas in a RF parallel-plate hollow-cathode system. The deposition system was built by placing a metallic plate in parallel to and in electrical contact with an usual RF-PECVD planar cathode. Self-bias versus RF power curves were used to make an initial characterization of plasma discharges in nitrogen gas atmospheres, for pressures between 10 and 100 mTorr. The strongly increased power consumption to obtain the same self-bias in the hollow-cathode system evidenced an increase in plasma density. The a-C:H films were deposited onto Si single crystalline substrates, in the − 50 to − 500 V self-bias range, at 5, 10 and 50 mTorr deposition pressures. The film deposition rate was found to be about four times than that usually observed for single-cathode RF-PECVD-deposited films, under methane atmosphere, at similar pressure and self-bias conditions. Characterization of film structure was carried out by Raman spectroscopy on films deposited at 10 and 50 mTorr pressures. Gaussian deconvolution of the Raman spectra in its D and G bands shows a continuous increase in the I_D/I_G integrated band intensity ratio upon self-bias increase, obeying the expected increasing behavior of the sp² carbon atom fraction. The peak position of the G band was found to increase up to − 300 V self-bias, showing a nearly constant behavior for higher self-bias absolute values. On the other hand, the G band width showed a nearly constant behavior within the entire self-bias range. Nanohardness measurements have shown that films deposited with self-bias greater than 300 V are as hard as films obtained by the usual PECVD techniques, showing a maximum hardness of about 18 GPa. Films were also found to develop high internal compressive stress. The stress dependence on self-bias showed a strong maximum at about − 200 V self-bias, with a maximum stress value of about 5 GPa.     

Preparation of tetrahedral amorphous carbon films by filtered cathodic vacuum arc deposition

Tetrahedrally bonded amorphous carbon (ta-C) and nitrogen doped (ta-C:N) films were obtained at room temperature in a filtered cathodic vacuum arc (FCVA) system incorporating an off-plane double bend (S-bend) magnetic filter. The influence of the negative bias voltage applied to substrates (from −20 to −350 V) and the nitrogen background pressure (up to 10⁻³ Torr) on film properties was studied by scanning electron microscopy (SEM), electron energy loss spectroscopy (EELS), Raman spectroscopy, X-ray photoemission spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and X-ray reflectivity (XRR). The ta-C films showed sp³ fractions between 84% and 88%, and mass densities around 3.2 g/cm³ in the wide range of bias voltage studied. In contrast, the compressive stress showed a maximum value of 11 GPa for bias voltages around −90 V, whereas for lower and higher bias voltages the stress decreased to 6 GPa. As for the ta-C:N films grown at bias voltages below −200 V and with N contents up to 7%, it has been found that the N atoms were preferentially sp³ bonded to the carbon network with a reduction in stress below 8 GPa. Further increase in bias voltage or N content increased the sp² fraction, leading to a reduction in film density to 2.7 g/cm³.     

Deposition and characterization of diamond-like carbon films by microwave resonator microplasma at one atmosphere

Diamond-like carbon (DLC) films have been deposited at atmospheric pressure by microwave-induced microplasma for the first time. Typical precursor gas mixtures are 250 ppm of C₂H₂ in atmospheric pressure He. Chemically resistant DLC films result if the Si (100) or glass substrate is in close contact with the microplasma, typically at a standoff distance of 0.26 mm. The films deposited under this condition have been characterized by various spectroscopic techniques. The presence of sp³ CH bonds and ‘D’ and ‘G’ bands were observed from FTIR and Raman spectroscopy, respectively. The surface morphology has been derived from SEM and AFM and shows columnar growth with column diameters of approximately 100 nm. Likely due to the low energy of ions striking the surface, the hardness and Young's modulus for the films were found to be 1.5 ± 0.3 GPa and 60 ± 15 GPa respectively with a film thickness of 2 μm. The hypothesis that a high flux of low energy ions can replace energetic ion bombardment is examined by probing the plasma. Rapid deposition rates of 4–7 μm per minute suggest that the method may be scalable to continuous coating systems.     

Mechanical properties of PECVD thin ceramic films

Silicon dioxide (thickness 350 nm and 969 nm) and silicon nitride (thickness 218 nm) films deposited on silicon substrate using plasma enhanced chemical vapor deposition process were investigated using a Berkovich nanoindenter. The load-depth measurements revealed that the oxide films have lower modulus and hardness compared to the silicon substrate, where as the nitride film has a higher hardness and slightly lower modulus than the substrate. To delineate the substrate effect, a phenomenological model, that captures most of the ‘continuous stiffness measurement’ data, was proposed and then extended on both sides to determine the film and substrate properties. The modulus and hardness of the oxide film were around 53 GPa and 4–8 GPa where as those of the nitride film were around 150 GPa and 19 GPa, respectively. These values compare well with the measurements reported elsewhere in the literature.     

Mechanical and electrical properties of micron-thick nitrogen-doped tetrahedral amorphous carbon coatings

The effect of nitrogen doping on the mechanical and electrical performance of single-layer tetrahedral amorphous carbon (ta-C:N) coatings of up to 1 μm in thickness was investigated using a custom-made filtered cathode vacuum arc (FCVA). The results obtained revealed that the hardness and electrical resistance of the coatings decreased from 65 ± 4.8 GPa (3 kΩ/square) to 25 ± 2.4 GPa (10 Ω/square) with increasing nitrogen gas ratio, which indicates that nitrogen doping occurs through substitution in the sp² phase. Subsequent AES analysis showed that the N/C ratio in the ta-C:N thick-film coatings ranged from 0.03 to 0.29 and increased with the nitrogen flow rate. Variation in the G-peak positions and I(D)/I(G) ratio exhibit a similar trend. It is concluded from these results that micron-thick ta-C:N films have the potential to be used in a wide range of functional coating applications in electronics.     

Influence of substrate bias voltage on structure and properties of hard Si–B–C–N films prepared by reactive magnetron sputtering

We systematically investigated the effect of the rf induced negative substrate bias voltage, U_b, on characteristics of novel quaternary Si–B–C–N films. The films were deposited on Si(100) or glass substrates by reactive dc magnetron co-sputtering of silicon, boron and carbon from a single C–Si–B or B₄C–Si target in nitrogen–argon gas mixtures at substrate temperatures of 180–350 °C. Elemental compositions of the films, their surface bonding structure, and mechanical and electrical properties were primarily controlled by the U_b values, varied from a floating potential (being between − 30 and − 40 V) to U_b = − 700 V. The energy and flux of ions bombarding the target and the growing films were evaluated on the basis of the measured discharge characteristics. The films were found to be amorphous with thickness up to 5 μm and density around 2.4 g/cm³. They exhibited hardness up to 44 GPa, modified Young's modulus between 170 and 280 GPa, elastic recovery up to 82% and good adhesion to substrates at a low compressive stress (0.6–1.8 GPa). The results of stress measurements were compared with predictions of the model developed by Davis and a beneficial role of silicon in reducing the compressive stress in the films was proved. Electrical conductivity of the semiconductive Si–B–C–N films with a high (approximately 40 at.%) carbon content was controlled by the nitrogen–argon gas mixture composition and the U_b values.     

Mechanical properties and thermal stability of SiBCN films prepared by ion beam assisted sputter deposition

The high hardness, exceptional high temperature stability, and oxidation resistance of bulk Si–B–C–N ceramics have led to the expectation that these materials will be good candidates for superior coating materials in high-temperature applications. In this study, SiBCN films were prepared using ion beam assisted sputter (IBAS) deposition, and the mechanical properties and thermal stabilities of the films at 600, 700, and 800 °C in air were investigated. In particular, the effects of the ion beam assist on the properties of the SiBCN films were examined. The SiBCN films were deposited on Si plates by sputtering a target composed of Si + BN + C using a 2-keV Ar⁺ ion beam. A low-energy N₂⁺ and Ar⁺ mixed ion beam irradiated the samples during the sputter deposition. The Si content in the SiBCN films was controlled by changing the Si/(BN + C) ratio of the target. BCN films were also deposited for comparison. The composition and chemical bonding structure of the prepared films were investigated by X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. We found that c-BN bonds were formed in the ion-assisted BCN film. The oxide layer thickness on the SiBCN films after thermal annealing decreased due to the IBAS deposition and an increase in the Si content. Ion-assisted SiBCN films annealed at 800 °C showed the highest hardness of 20 GPa.     

A superhard diamond-like carbon film

A superhard hydrogen-free amorphous diamond-like carbon (DLC) film was deposited by pulsed arc discharge using a carbon source accelerator in a vacuum of 2×10⁻⁴ Pa. The growth rate was about 15 nm/min and the optimum ion-plasma energy was about 70 eV. The impact of doping elements (Cu, Zr, Ti, Al, F(Cl), N) on the characteristics of DLC films deposited on metal and silicon substrates was studied aiming at the choice of the optimum coating for low friction couples. The microhardness of thick (≥20 μm) DLC films was studied by Knoop and Vickers indentations, medium thick DLC films (1–3 μm) were investigated using a ‘Fischerscope’, and Young's module of thin films (20–70 nm) was studied by laser induced surface acoustic waves. The bonds in DLC films were investigated by electron energy loss spectroscopy (EELS), X-ray excited Auger electron spectroscopy (XAES), and X-ray photoelectron spectroscopy (XPS). The adhesion of DLC films was defined by the scratch test and Rockwell indentation. The coefficient of friction of the Patinor DLC film was measured by a rubbing cylinders test and by a pin-on-disk test in laboratory air at about 20% humidity and room temperature. The microhardness of the Patinor DLC film was up to 100 GPa and the density of the film was 3.43–3.65 g/cm³. The specific wear rate of the Patinor DLC film is comparable to that of other carbon films.     

Changes in chemical bonding of diamond-like carbon films by atomic-hydrogen exposure

We have deposited unhydrogenated diamond-like carbon (DLC) films on Si substrate by pulsed laser deposition using KrF excimer laser, and investigated the effects of atomic-hydrogen exposure on the structure and chemical bonding of the DLC films by photoelectron spectroscopy (PES) using synchrotron radiation and Raman spectroscopy. The fraction of sp³ bonds at the film surface, as evaluated from C1s spectra, increased at a substrate temperature of 400 °C by atomic-hydrogen exposure, whereas the sp³ fraction decreased at 700 °C with increasing exposure time. It was found that the sp³ fraction was higher at the surfaces than the subsurfaces of the films exposed to atomic hydrogen at both the temperatures. The Raman spectrum of the film exposed to atomic hydrogen at 400 °C showed that the clustering of sp² carbon atoms progressed inside the film near the surface even at such a low temperature as 400 °C.     

Temperature effect on bonding structures of amorphous carbon containing more than 30at.% silicon

Bonding evolution of amorphous carbon incorporated with Si or a-C(Si) in a thermal process has not been studied. Unhydrogenated a-C(Si) films were deposited by magnetron sputtering to undergo two different thermal processes: i) sputter deposition at substrate temperatures from 100 to 500 °C; ii) room temperature deposition followed by annealing at 200 to 1000 °C. The hardness of the films deposited at high temperature exhibits a monotonic decrease whereas the films deposited at room temperature maintained their hardness until 600 °C. X-ray photoelectron spectroscopy and Raman spectroscopy were used to analyze the composition and bonding structures. It was established that the change in the mechanical property is closely related to the atomic bonding structures, their relative fractions and the evolution (conversion from C–C sp³ → CC sp² or CC sp² → C–Si sp³) as well as clustering of sp² structures.     

Diamond-like carbon overcoat for TFMH using filtered cathodic arc system with Ar-assisted arc discharge

The deposition system described for sub-30 Å and thicker carbon (ta-C) overcoat that includes two RF ion beam guns and Filtered Cathodic Arc (FCA) module mounted on a single vacuum chamber. The system is capable of flattening the Thin Film Magnetic Heads (TFMH) surface by ion beam etching; smoothing scratches, trenches, steps on boundaries of different materials, and enhancing the adhesion by ion assisted ion beam sputtering. It provides the highly controllable deposition of carbon using an FCA module with Ar-assisted arc discharge. Low-level particulates are achieved on the deposited film surface (< 5/cm² ). It was shown that crucial impact on filtering the particles with size < 1 μm has the electrostatic field distribution across the plasma guide that can be controlled by duct bias. Mechanical and electrical properties, optical and Raman spectra of ta-C films were investigated as a function of Ar flow in the arc discharge area. At Ar flow rates 0–12 sccm, stress of the films was varied in a range 2.9–7.5 GPa while hardness and Young's Modulus stayed in ranges of 45–60 GPa, and 230–300 GPa, respectively. Density of the obtained films was greater than 2.8 g/cm³. Optical absorption and electrical conductivity of ta-C films showed a significant rise while stress came down with Ar flow. Raman G-peak was higher for ta-C films with lower stress and shifted to lower energy. The low stress films versus high stress films showed a few orders reduced electrical resistance and anisotropy of specific resistance with respect to substrate plane: ρ_⊥ ≫ ρ_∥. In situ ellipsometric control of growing film thickness was implemented on the system. Run-to-run standard deviation was less than 1 Å for 20–25 Å thick films. High corrosion resistance of FCA coatings was exhibited. The impact of Ar gas–carbon plasma interaction on the deposition conditions and microstructure of ta-C films was discussed.     

Hardness of nanocomposite a-C:Si films deposited by magnetron sputtering

Hydrogen-free a-C:Si films with Si concentration from 3 to 70 at.% were prepared by magnetron co-sputtering of pure graphite and silicon at room temperature. Mechanical properties (hardness, intrinsic stress), film composition (EPMA and XPS) and film structure (electron diffraction, Raman spectra) were investigated in dependence on Si concentration, substrate bias and deposition temperature. The film hardness was maximal for ∼ 45 at.% of Si and deposition temperatures 600 and 800 °C. Reflection electron diffraction indicated an amorphous structure of all the films. Raman spectra showed that the films in the range of 35–70 at.% of Si always contain three bands corresponding to the Si, SiC and C clusters. Photoelectron spectra showed dependency of Si–C bond formation on preparation conditions. In the films close to the stoichiometric SiC composition, the surface and sub-surface carbon atoms exhibited dominantly sp³ bonds. Thus, the maximal hardness was observed in nanocomposite a-C:Si films with a small excess of carbon atoms.     

Very hard ZrC thin films grown by pulsed laser deposition

Thin ZrC films were grown on (1 0 0) Si substrates at temperatures from 30 to 500 °C by the pulsed laser deposition technique. Auger electron spectroscopy investigations found that films contained oxygen concentration below 2.0 at%, while X-ray photoelectron spectroscopy investigations showed that oxygen is bonded in an oxy-carbide type of compound. The films’ mass densities, estimated from X-ray reflectivity curve simulations, and crystallinity improved with the increase of the substrate temperature. Williamson–Hall plots and residual-stress measurements using the modified sin² ψ method for grazing incidence X-ray diffraction showed that the deposited films are nanostructured, with crystallite sizes from 6 to 20 nm, under high micro-stress and compressive residual stress. Nanoindentation investigations found hardness values above 40 GPa for the ZrC films deposited at substrate temperatures higher than 300 °C. The high density of the deposited films and the nm-size crystallites are the key factors for achieving such high hardness values.     

Tribological study of hydrogenated amorphous carbon films with tailored microstructure and composition produced by bias-enhanced plasma chemical vapour deposition

We investigated the mechanical and tribological properties of hydrogenated amorphous carbon (a-C:H) films on silicon substrates by nanoindentation, ball-on-disc tribotesting and scratch testing. The a-C:H films were deposited from an argon/methane gas mixture by bias-enhanced electron cyclotron resonance chemical vapour deposition (ECR-CVD). We found that substrate biasing directly influences the hardness, friction and wear resistance of the a-C:H films. An abrupt change in these properties is observed at a substrate bias of about ?100 V, which is attributed to the bias-controlled transition from polymer- to fullerenelike carbon coatings. Friction coefficients in the range of 0.28–0.39 and wear rates of about 7 × 10^?5 mm³/Nm are derived for the polymeric films when tested against WC–Co balls at atmospheric test conditions. On the other hand, the fullerenelike hydrogenated carbon films produced at ion energies > 100 eV display a nanohardness of about 17 GPa, a strong reduction in the friction coefficient (～ 0.10) and a severe increase in the wear resistance (～ 1 × 10^?7 mm³/Nm). For these films, relative humidity has a detrimental effect on friction but no correlation with the wear rate was found.     

Influence of negative bias voltage on microstructure and property of Al-Ti-N films deposited by multi-arc ion plating

In this study, we systematically investigated the effects of negative bias voltage on the composition, deposition efficiency, microstructure, and mechanical properties of multi-arc ion plated (MAIP) AlTiN films. The films were deposited on high-speed steel substrates by MAIP at various negative bias voltages. The results indicated that the Al content [Al/(Al+Ti) ratio] and the deposition efficiency were significantly altered by the application of negative bias voltages. X-ray photoelectron spectroscopy analysis showed that the AlTiN films were composed of Ti–N and Al–N bonds. The macroparticles (MPs) on the film surface decreased with increasing negative bias voltage. We also discussed the different types of MPs found on the films and their influence on the process of determining the hardness of the films. The microhardness of the films depends on the negative bias voltages. The films deposited at −250 V exhibited a maximum hardness of ~45 GPa. The adhesion and frictional tests revealed that the film deposited at −150 V demonstrated the highest cracking resistance, the best adhesion under a critical load of 78 N, highest adhesion strength, and the lowest and stablest coefficient of friction at 0.23.