直流磁过滤电弧源沉积氧化钛薄膜的光学特性

为了探索电弧源离子镀技术制备的氧化钛薄膜的透射率、消光系数和折射率,利用直流磁过滤电弧源在K9玻璃基底上制备了氧化钛薄膜,通过分光光度计和椭偏仪对薄膜的透射率、折射率和消光系数等光学特性和沉积速率进行分析研究.研究结果表明：波长在400～700nm之间,氧化钛薄膜的折射率为2.3389～2.1189;消光系数在10-3数量级上,消光系数小,薄膜吸收小,薄膜峰值透射率接近K9基底的透射率;沉积时间30min,薄膜的厚度是678.2nm,电弧源离子镀技术沉积氧化钛薄膜的平均速率为22.6nm/min.     

基体粗糙度和硬度对TiAlCN附着力的影响

在不同粗糙度和硬度的GCr15轴承钢基体上,利用多弧离子镀技术低温(175℃)沉积TiAlCN涂层.利用扫描电子显微镜(SEM)、AFM、EPMA、XRD和附着力测试仪等研究了薄膜形貌和性质.结果表明:基体越平整,制备的涂层表面也就越平整;薄膜附着力随着表面粗糙度的增大而减小,在基体粗糙度为0.01μm时,薄膜附着力达到最大值42.8N;基体硬度越高,膜/基附着力越大,在基体硬度为835HV0.01时,附着力达到最大值31.2N;在涂层中,发现了晶体结构为fcc-TiN结构,衍射图中没有AlN相出现,这是TiN相优于AlN相而形成的缘故.     

脉冲偏压对铝合金上TiN膜生长的影响

为了研究在铝合金上硬质膜的性能,促进硬质TiN膜在铝合金构件上的应用,利用电弧离子镀在7075铝合金上沉积TiN膜层,并通过改变脉冲偏压幅值研究其对薄膜生长过程的影响.结果表明,生长的TiN膜具有柱状特征,在无偏压或低偏压时,柱状特征明显,但随着负偏压值的增大,柱状特征变得不明显,膜层中Ti和N的原子比率增加,由无偏压、低偏压时近似为1.0增加到-200V偏压时的1.2.在0～-200V偏压范围内,沉积膜的平均生长速率由1.5μm/h增加到11.3μm/h.随着负偏压的增加,TiN膜的(111)方向的择优取向越来越明显,而(200)方向强度越来越小.沉积膜呈柱状生长,具有明显的择优取向,其程度受脉冲偏压影响.     

脉冲负偏压对TiN-Cu复合膜结构与性能的影响

为了研究薄膜的生长过程对薄膜结构和性能的影响并促进该类薄膜的商业应用,利用电弧离子镀在不同脉冲负偏压下沉积了TiN-Cu复合膜,并对其表面形貌、晶体结构、能谱、硬度、结合强度和耐磨性进行研究.结果表明,在50~300 V范围内,随脉冲负偏压值增加,沉积薄膜中Cu原子分数逐渐减少;薄膜中最大的Cu原子分数低于Cu-Ti合金靶中Cu原子分数.沉积膜中TiN相存在明显的(111)晶面织构,并且脉冲负偏压值增大,薄膜的织构程度增加.脉冲负偏压值增加,沉积的TiN-Cu复合膜的硬度和耐磨性降低,但结合强度增加.沉积膜结构与性能的变化与脉冲偏压引起薄膜中Cu原子分数的变化有一定关系.     

降低DLC薄膜应力的方法研究

为了沉积出高硬度、低应力、高膜-基结合强度的类金刚石硬质薄膜,利用脉冲电弧离子镀技术在高速钢基底上制备类金刚石薄膜,采用退火、增加Ti过渡层、Ti离子轰击等方法减小DLC薄膜应力.结果表明:单层DLC薄膜的应力可达7.742 GPa;以Ti为过渡层的DLC薄膜的应力减小为2.027 GPa;对Ti/DLC薄膜进行退火热处理,薄膜应力减小到0.359GPa.利用Ti作过渡层,并且对薄膜进行退火处理,可以使DLC薄膜产生的高应力在Ti层中得到明显减小,提高膜-基结合力,增加硬度.     

电弧离子镀制备TiAlN膜工艺研究

采用阴极电弧离子镀技术在1Cr18Ni9Ti不锈钢基材上制备TiAlN膜层,镀膜装置为俄罗斯科学院UVN 0.5D2I电弧离子镀膜机,该设备由一个大功率的气体离子源和两个金属蒸发源组成.气体离子源具有气体离子轰击和辅助沉积的特点.研究了电弧电流、负偏压和气体离子源功率等工艺参数对膜层的影响规律.实验结果表明:气体离子源具有明显的细化金属颗粒的作用.提出了制备TiAlN膜层的最佳工艺,得到了厚度为5 ～10μm、相结构为Ti0.5Al0.5N、显微硬度为1200HV0.01的TiAlN膜层.     

MoS2/Zr复合薄膜的制备工艺研究

采用中频磁控溅射及多弧离子镀相结合的复合镀膜工艺,在硬质合金YT14基体上制备了MoS2/Zr复合薄膜.采用扫描电子显微镜(SEM)考察了复合薄膜表面及截面的形貌,利用能谱分析(EDX)薄膜的成分组成.研究了沉积温度、基体负偏压及Zr电流等沉积工艺参数对复合薄膜的结合力、显微硬度、厚度等性能的影响.结果表明:沉积工艺参数对MoS2/Zr复合薄膜的性能影响很大,合理选择沉积工艺参数能够明显提高和改善复合薄膜的性能,并分析了沉积参数对性能的影响机理.在本实验条件下,最佳沉积工艺参数为:沉积温度200 ℃,基体偏压180 V,Zr电流30 A,制备的MoS2/Zr复合薄膜结构致密,其结合力约为60 N,厚度约为2.4 μm,显微硬度约为HV900.     

玻璃衬底沉积氮化硅薄膜性能研究

为了改善玻璃衬底上制备的薄膜太阳电池的转换效率,采用高纯氮气作为等离子体气源,以质量分数为5%的SiH_4(Ar稀释)作为前驱气源,利用电子回旋共振-等离子体增强化学气相沉积技术在玻璃衬底上低温制备了氮化硅薄膜;利用各种测试设备分析了薄膜的成分、光学性能和表面形貌.结果表明:实验制备的非晶薄膜含氢量较低;薄膜的折射率随着衬底温度和微波功率的增加而增加.在衬底温度为350℃、微波功率为650 W时,薄膜的折射率在2.0左右,平均粗糙度为1.45 nm,还说明薄膜具有良好的光学性能和较高的表面质量.在此条件下,薄膜的沉积速率达到10.7 nm/min,表明本实验能在较高的沉积速率下制备均匀、平整、优质的SiN薄膜.     

调制比对多层DLC薄膜性能的影响

针对DLC薄膜内应力大,膜基结合强度较差的问题.本文通过磁过滤真空阴极电弧设备,沉积不同偏压下的单层DLC薄膜,并以此为基础控制沉积多层DLC薄膜时各个阶段的偏压,镀制不同调制比下三层结构的DLC薄膜,最终使用纳米压痕划痕仪测试薄膜硬度、弹性模量和膜基结合强度,探讨了不同调制比对DLC薄膜机械性能的影响.实验结果表明:...     

UBMS和PVAD法制备DLC薄膜表面微观形貌分析

光学薄膜的表面粗糙度是影响薄膜光学特性的重要因素,薄膜表面产生的散射损耗将影响薄膜的光学质量.采用非平衡磁控溅射(Unbalance Magnetron Sputtering,UBMS)和脉冲真空电弧沉积(Pulsed Vacuum Arc Deposition,PVAD)制备类金刚石薄膜(DiamondLike Carbon,DLC),利用泰勒霍普森表面轮廓仪,研究了不同工艺参数、不同薄膜厚度下所沉积的DLC薄膜表面粗糙度变化规律.结果表明:两种沉积技术下,随着薄膜厚度的增加,其表面均方根粗糙度先减小后增大.真空度和脉冲频率对表面粗糙度有显著影响.真空度在0.4~0.8 Pa范围变化时,表面均方根粗糙度变化范围为0.888 6~1.610 4 nm,脉冲频率在1~5Hz范围变化时,表面均方根粗糙度变化范围为1.040 7~1.545 8 nm.     

Adhesion of NiCu Films DC Biased Plasma-Sputter-Deposited on MgO (001)

NiCu films about 60nm thick were deposited on MgO (001) substrates at 230℃ by DC plasma-sputtering at 2.7kV and 8mA in pure Ar gas using a Ni90Cu10 target. A DC bias voltage of 0, 60, 110 or 140V was applied to the substrate during deposition. The adhesion of the film to the substrate was studied using a scratch test as a function of . The application of is very effective in increasing the adhesion of the film to the substrate. In conclusion, the adhesion increases with cleaning the substrate surface by sputtering off impurity admolecules during the film initial formation due to the energetic Ar ion particle bombardment.     

Effect of Change in Thickness of Ag Toplayer on the Structure and Magnetic Properties of FePd Films Grown on Glass Substrate

A series of FePd based alloy films were deposited on glass substrates by DC magnetron sputtering. The Ag toplayer effect was studied using FePd(67.5 nm)/Ag(3.875, 7.75, 15.50, 31 and 38.75 nm) films annealed at 600 ℃ for different time in order to find the role of the Ag toplayer in disorder-order of FePd film. The results show that the Ag toplayer can accelerate the phase transition from FCC to FCT in films. The magnetic easy axis of the crystallites in this film is in-plane of substrate. The Ag toplayer can greatly enhance the coercive of FePd films. When the thickness of Ag is equal to 31 nm, the film has a very large in-plane coercivity of 2.8 kOe and a very low out-of-plane coercivity of 1.04 kOe.     

利用同质缓冲层溅射生长c轴择优取向氮化铝薄膜

采用射频反应磁控溅射技术，利用低温低功率下生长的氮化铝（AlN）作为缓冲层，在铟锡复合氧化物（ITO）玻璃衬底上制备出具有良好c轴择优取向的多晶AlN薄膜.采用X射线衍射仪（XRD）、原子力显微镜（AFM）和场发射扫描电子显微镜（FESEM）研究了缓冲层对薄膜结晶特性和表面形貌的影响.结果表明，该缓冲层在提高AlN薄膜结晶质量的同时，薄膜的表面粗糙度由19.1 nm减小到2.5 nm，使薄膜表面更为平滑、致密.剖面扫描电子显微镜（SEM）照片显示AlN晶粒呈高度一致的柱状生长体制.通过分析样品的透射光谱，计算得到AlN薄膜的折射率和消光系数分别为2.018 7和0.007 7.     

Structures and properties of [CoPt/Ag]_n multilayer films

In recent years there has been considerable interest in atomically ordered L10-CoPtfilms as potential materials for ultrahigh density magnetic recording (UDMR) media[1].The L10 phase CoPt alloy has high anisotropy constant of 107—108 erg/cm3, which is ofcrucial importance for UDMR media with a small grain size below 10 nm, because highmagnetocrystalline anisotropy is needed to create a barrier to thermally activatedswitching of the magnetization[2, . The as-deposited CoPt film with equi…     

离子轰击对HDPE膜表面性能的影响

采用真空镀膜机中的轰击设备,在低真空度下对高密度聚乙烯（HDPE）膜进行离子轰击,通过原子力显微镜（AFM）、接触角测试仪及衰减全反射-傅里叶变换红外光谱仪（ATR-FTIR）对膜表面性能进行表征,采用胶带法对得到的真空蒸镀复合膜（Ag／HDPE）进行镀层与基材间粘接牢度的测试．结果表明,随着轰击时间的延长,HDPE膜的表面粗糙度、表面羰基指数和极性都随之增加;轰击预处理后的HDPE基膜与无机Ag镀层间的粘接牢度得到很大程度的提高．     

YT类硬质合金成形铣刀的金刚石涂层工艺研究

针对YT15硬质合金B212型成形铣刀片,以两种不同的化学方式对硬质合金基体进行预处理,而后采用热丝化学气相沉积的方法在其表面沉积微米级金刚石薄膜.使用扫描电子显微镜观察金刚石薄膜颗粒的大小及均匀度,激光拉曼光谱仪检测金刚石涂层的成分,压痕法检验金刚石涂层刀片的膜-基附着强度,并就不同预处理的基体表面对金刚石薄膜的质量、附着性能的影响进行分析.结果表明,经预处理后的YT类硬质合金表面粗糙度较YG类降低约10%,采用平行布置热丝方式和现有的沉积工艺在YT类硬质合金衬底涂覆的金刚石薄膜均匀性较好,且经酸碱预处理的金刚石薄膜表现出良好的附着力,附着强度介于600~1 000 N,醇碱预处理对衬底表面原有的光洁度损坏较小,有助于细化金刚石晶粒,但膜-基附着强度不高.     

Structures and properties of [CoPt/Ag]<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> multilayer fims

The magnetic properties and structures of [CoPt/Ag] _n , multilayer films deposited by DC magnetron sputtering have been studied. During the deposited process, two kinds of deposited sequences, that is Ag layer (FDAG) first deposited or CoPt layer (FDCP) first deposited, have been chosen. The results show that the microstructures and coercivities were strongly influenced by the deposited sequence and the thickness of films. The coercivities of [Ag/CoPt] _n with FDAG are obviously higher than those of [CoPt/Ag] _n with FDCP. Especially, when the thickness of films is 8 nm, the difference of coercivities between the FDAG film and the FDCP film is the largest. It is possibly because Ag plays a role of underlayer in FDAG multilayers, which can induce both the transformation from fcc to fct and the oriented growth along c-axis. In addition, δM curves reveal that the [CoPt/Ag]₈ multilayer, film has a lower intergrain interaction than the CoPt/Ag bilayer film.     

氧氩比和退火温度对AZO薄膜结构与性能的影响

在通氩气和不同比率氧氩混合气体的条件下,利用射频磁控溅射法在玻璃衬底上制备铝(Al)掺杂氧化锌(AZO)薄膜(溅射功率为180W,衬底温度为300℃),并对部分薄膜样品进行400℃或500℃退火处理.采用X射线衍射仪(XRD)、原子力显微镜(AFM)和分光光度计对薄膜的结构、表面形貌和光学性能进行测试研究.结果表明,制备的所有薄膜均呈现(002)晶面择优生长;与氩气溅射相比,当采用氧氩混合气体溅射时,生长的AZO薄膜晶粒尺寸显著增大;退火处理使2类薄膜的表面粗糙度都明显减小,晶粒也有所增大(7%~13%).其中,在氧氩比为1∶2的混合气体中制备的薄膜,经过500℃退火后,晶粒尺寸最大(39.4nm),薄膜表面更平整致密,在可见光区平均透过率接近最大(89.3%).     

A direct atomic layer deposition method for growth of ultra-thin lubricant tungsten disulfide films

We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide (WS₂) films. The WS₂ films were deposited on a Si (100) substrate and a zinc sulfide (ZnS) film coated the Si (100) substrate using tungsten hexacarbonyl and hydrogen sulfide as precursors. The ZnS film served as an intermediate layer to facilitate the nucleation and growth of the WS₂ films. The thickness of the WS₂ films was measured via scanning electron microscope, the microstructure was probed with an X-ray diffractometer and a transmission electron microscope. The friction coefficient was measured with a ball-on-disk tester under dry nitrogen. The results reveal that the WS₂ films deposited on both substrates are ~175 nm and have (002) and (101) crystal orientations. The WS₂ film deposited on the ZnS coated Si substrate exhibits a stronger (002) orientation and a denser crystal structure than that deposited on the Si substrate. The WS₂ films on both substrates have low friction coefficients. However, due to the stronger (002) orientation and denser crystal structure, the friction coefficient of the WS₂ film deposited on ZnS coated Si substrate is smaller with longer wear life.