Fabrication of low-density GaN/AlN quantum dots via GaN thermal decomposition in MOCVD

With an appropriate high anneal temperature under H₂ atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10⁸ cm^-2. X-ray photoelectron spectroscopy (XPS) analysis demonstrates that the GaN QDs were formed without Ga droplets by thermal decomposition of GaN.     

有机相微波合成AgInS2量子点及其白光发光二极管应用研究

AgInS₂量子点(AIS QDs)由于具有绿色环保、发射波长可调、荧光寿命长、斯托克斯位移大等优势,在光电和生物医药领域具有广阔的应用前景。采用微波辅助加热法在十八烯溶剂中制备了AIS QDs。通过X射线衍射、透射电子显微镜、光致发光光谱系统研究了反应时间对AIS QDs的物相、形貌及荧光性能的影响,采用傅里叶红外光谱和X射线光电子能谱表征了量子点表面结合的情况。实验结果表明：当微波功率为800 W、反应时间为5~25 min时均可以制备出AIS QDs。随着反应时间的延长,AIS QDs的粒径由3 nm增加至4 nm,发光峰位在592.0~619.6 nm范围内调谐;同时AIS QDs的荧光强度逐渐提高,并在15 min达到峰值,量子产率(PLQY)达到16.16%。进一步采用ZnS作为包覆壳层有效钝化量子点表面缺陷、提高荧光性能,制备出的AIS@ZnS QDs的PLQY增加至31.21%。将AIS@ZnS QDs和商用荧光粉共同作为发光层制备成白光发光二极管(WLED)器件,在20 mA电流驱动下发光效率(LE)为74.90 lm/W,显色指数(CRI)和色温(CCT)分别为83.31和3823 K,表明制备的量子点在固态照明领域具有潜在的应用前景。     

Structural and optical properties of InGaN/GaN triangular-shape quantum wells with different threading dislocation densities

Structural and optical properties of InGaN/GaN multiple triangular quantum well (QW) structures with different threading dislocation (TD) densities of 1.5×108 (sample A) and 4.5×108 cm^-2 (sample B) have been studied. High resolution transmission electron microscopy and x-ray diffraction analysis showed more fluctuation of local In composition in the sample B, which was attributed to the stress field created by the dislocations as it provides a driving force for the migration of In atoms towards dislocations. Severe degradation of photoluminescence intensity of the sample B was also observed at < 50 K. The optical and structural properties of the InGaN/GaN triangular QW structures are overall substantially affected by the TD density. This paper is dedicated to Professor Hyun-Ku Rhee on the occasion of his retirement from Seoul National University.     

Effects of growth variables on structural and optical properties of InGaN/GaN triangular-shaped quantum wells

Structural and optical properties of InGaN/GaN triangular-shaped multiple quantum well (QW) structures were investigated under various conditions of growth parameters such as growth temperature, flow rate of Ga and/ or In composition, and well and barrier widths. The optical properties affected by the growth parameters were well correlated with an In band gap, which is determined by the potential depth and the In composition in the well region. The emission peak energy was almost independent of the barrier width due to the relaxation of the piezoelectric fields in the triangular-shaped QWs. Photoluminescence spectra of the InGaN/GaN multiple QW structures showed a parabolic curve centered at 2.66 eV. The optical property of the triangular-shaped multiple QWs was substantially improved due to formation of quantum dot-like In composition fluctuations.     

Optimization of the light-emitting diode daylight simulator based on the CIE metamerism index method

By using spectral loss simulation, it was found that six spectral bands are needed to produce a daylight simulator with good performance. The optimization model for both Commission Internationale de l'Eclairage metamerism index and luminous efficacy (LE) of light-emitting diode (LED) daylight simulator (LDS) was developed. The optimal LDSs with AA grade for D50, D55, D65, and D75 illuminants should consist of the violet LEDs with violet phosphor excited by an ultraviolet chip, and the white LEDs with green, yellow, and red phosphors excited by a blue chip. Their limit luminous efficacies under the ideal case could reach 179 to 204 lm/W. And finally, a scheme for a spectrally tunable LDS with AA grade was presented.     

Long-wavelength room-temperature luminescence from InAs/GaAs quantum dots with an optimized GaAsSbN capping layer

An extensive study on molecular beam epitaxy growth conditions of quaternary GaAsSbN as a capping layer (CL) for InAs/GaAs quantum dots (QD) was carried out. In particular, CL thickness, growth temperature, and growth rate were optimized. Problems related to the simultaneous presence of Sb and N, responsible for a significant degradation of photoluminescence (PL), are thereby solved allowing the achievement of room-temperature (RT) emission. A particularly strong improvement on the PL is obtained when the growth rate of the CL is increased. This is likely due to an improvement in the structural quality of the quaternary alloy that resulted from reduced strain and composition inhomogeneities. Nevertheless, a significant reduction of Sb and N incorporation was found when the growth rate was increased. Indeed, the incorporation of N is intrinsically limited to a maximum value of approximately 1.6% when the growth rate is at 2.0 ML s⁻¹. Therefore, achieving RT emission and extending it somewhat beyond 1.3 μm were possible by means of a compromise among the growth conditions. This opens the possibility of exploiting the versatility on band structure engineering offered by this QD-CL structure in devices working at RT.

PACS

81.15.Hi (molecular beam epitaxy); 78.55.Cr (III-V semiconductors); 73.21.La (quantum dots)     

Multi-colored type-I Ag-doped ZnCdS/ZnS core/shell quantum dots with intense emission

Although doped quantum dots (d-dots) with intense and tunable emission have been studied for long time, there are still great efforts to prepare new ones with promising characteristics. In the present work, we used a mild/effective strategy for preparing high quality and aqueous-soluble Ag:ZnCdS/ZnS core/shell quantum dots (QDs) with N-acetyl-l-cysteine as the capping agent. Through investigating the experimental variables, the impurity-related emission intensity of the as-prepared samples was optimized. The capability of the present work on creating quantum structures with tunable emission across the entire visible spectrum was approved through simple but effective variation in Zn-to-Cd molar ratio. Indeed, as the Zn:Cd molar ratio changed from 2:0 to 0:2, the emission color was changed significantly from blue to red color with a satisfactory photoluminescence quantum yield. The quantum yield value reached ～41% for the as-prepared core/shell d-dots without any pre/post-treatment, which is a remarkable result for such aqueous-soluble structures. XRD, EDX, ICP, and TEM measurements were applied to determine the structural features of the QDs in a strong quantum confinement regime. The generality of preparation route, its biocompatibility, along with a multi-color emission, can create new opportunities especially for the white light emitting technologies, or multi-color bioimaging for theranostics.     

Fabrication and characterization of WO3/Ag/WO3 multilayer transparent anode with solution-processed WO3 for polymer light-emitting diodes

ABSTRACT: The dielectric/metal/dielectric (DMD) multilayer is suitable for a transparent electrode because of its high optical and high electrical properties; however, it is fabricated by an expensive and inefficient multistep vacuum process. We present a WO3/Ag/WO3 (WAW) multilayer transparent anode with solution-processed WO3 for polymer light-emitting diodes (PLEDs). This WAW multilayer not only has high transmittance and low resistance but also can be easily and rapidly fabricated. We devised a novel method to deposit a thin WO3 layer by a solution process in an air environment. A tungstic acid solution was prepared from an aqueous solution of Na2WO4 and then converted to WO3 nanoparticles (NPs) by a thermal treatment. Thin WO3 NP layers form WAW multilayer with a thermal evaporated Ag layer, and they improve the transmittance of the WAW multilayer because of its high transmittance and refractive index. Moreover, the surface of the WO3 layer is homogeneous and flat with low roughness because of the WO3 NP generation from the tungstic acid solution without aggregation. We performed optical simulation and experiments, and the optimized WAW multilayer had a high transmittance of 85% with a sheet resistance of 4 /sq. Finally, PLEDs based on the WAW multilayer anode achieved a maximum luminance of 35550 cd/m2 at 8 V, and this result implies that the solution-processed WAW multilayer is appropriate for use as a transparent anode in PLEDs.     

InAs/GaAs quantum dots with wide-range tunable densities by simply varying V/III ratio using metal-organic chemical vapor deposition

The complicated behaviors of InAs/GaAs quantum dots with increasing V/III ratio associated with several competing mechanisms have been described. The results demonstrate that the densities of InAs quantum dots can be tuned in a wide range from 10⁵ to 10¹⁰ cm⁻² by simply manipulating V/III ratio via metal-organic chemical vapor deposition. These results are mainly ascribed to the changes of coverage and In adatom migration length due to the increasing V/III ratio.     

In situ accurate control of 2D-3D transition parameters for growth of low-density InAs/GaAs self-assembled quantum dots

A method to improve the growth repeatability of low-density InAs/GaAs self-assembled quantum dots by molecular beam epitaxy is reported. A sacrificed InAs layer was deposited firstly to determine in situ the accurate parameters of two- to three-dimensional transitions by observation of reflection high-energy electron diffraction patterns, and then the InAs layer annealed immediately before the growth of the low-density InAs quantum dots (QDs). It is confirmed by micro-photoluminescence that control repeatability of low-density QD growth is improved averagely to about 80% which is much higher than that of the QD samples without using a sacrificed InAs layer.