Dot size effects of nanocrystalline germanium on charging dynamics of memory devices

The dot size of nanocrystalline germanium (NC Ge) which impacts on the charging dynamics of memory devices has been theoretically investigated. The calculations demonstrate that the charge stored in the NC Ge layer and the charging current at a given oxide voltage depend on the dot size especially on a few nanometers. They have also been found to obey the tendency of initial increase, then saturation, and lastly, decrease with increasing dot size at any given charging time, which is caused by a compromise between the effects of the lowest conduction states and the capacitance of NC Ge layer on the tunneling. The experimental data from literature have also been used to compare and validate the theoretical analysis.     

Quantum chemical study of the electronic structure of new nanotubular systems: α-graphyne-like carbon, boron-nitrogen and boron-carbon-nitrogen nanotubes

Single-wall BN and BCN nanotubes in assumed α-graphyne-like wall structures are studied by means of the tight-binding band theory. The electron density of states, total energies and interatomic bond indices (crystal orbital overlap populations) are analyzed as a function of the composition, atomic structure and diameters of zigzag and armchair BN and BCN tubes. The results obtained are compared with the electronic properties of α-graphyne carbon- and graphite-like BN nanotubes.