直流磁控溅射法制备含氦铝膜

采用氦氩混合气氛下直流磁控溅射沉积方法制备含有氦原子的金属铝膜。经碳原子弹性前冲散射分析（C-ERDA），薄膜中氦原子浓度可达约7％，且分布均匀。实验研究了薄膜中的氦含量与溅射真空室气氛中氦的相对含量、基底偏压及沉积温度间的关系。薄膜的X射线衍射分析结果显示：膜中的氦含量变化并未引起明显的峰位移，只是随氦含量增加谱峰宽化。热释放实验证实，氦在薄膜中稳定存在，约500℃以上时方出现氦的释放。     

氧氩比对低活化马氏体钢表面氧化铪涂层性能的影响

本文采用射频磁控溅射法在不同氧氩比下制备氧化铪涂层.研究了涂层的沉积速率、表面形貌、微观结构和电绝缘特性随氧氩比的变化.结果表明用此方法在低活化马氏体钢上制备的氧化铪涂层表面致密、无明显孔洞;低活化马氏体钢为衬底时涂层较易结晶为以单斜相为主的晶体结构;且涂层的绝缘特性受氧氩比影响较大,氧氩比为0.7和1.2下制备的涂层击穿场强小于1 MV/cm,电绝缘特性较差,在较低氧氩比下制备的涂层有较理想的绝缘性能.     

Preparation of Al thin films charged with helium by DC magnetron sputtering

Helium atoms, up to 6.9 at.%, were introduced into Al films by DC magnetron sputtering in a He/Ar mixed atmosphere and distributed evenly in it. The relation between the He/Ar flux ratio, bias voltage, substrate temperature and helium concentration is studied. The helium concentration can be easily controlled by change of the process parameters and it greatly affects the morphology of film. TEM analysis suggests that small helium bubbles with a diameter of 1 nm are formed in the grain.     

高质量类金刚石薄膜的制备与性能分析

采用直流/射频耦合磁控溅射法在Si(100)衬底上成功制备出类金刚石(DLC)薄膜。利用Raman光谱仪、X射线光电子能谱仪表征不同射频功率下所制备薄膜的化学结构,讨论射频功率对薄膜化学结构的影响。采用X射线小角反射法表征薄膜的质量密度,利用曲率弯曲法表征薄膜的残余内应力,采用扫描电镜和原子力显微镜表征所制备薄膜的表面形貌与粗糙度。研究表明:薄膜中sp3键的含量随着射频功率的增加而呈现出先增大后减小的趋势,且在射频功率为40 W时达到最大值45.6%。随着射频功率的增加,薄膜的表面粗糙度呈现出先减小后增大的趋势,当射频功率为40 W时薄膜的表面粗糙度最小,为1.6 nm。直流/射频耦合磁控溅射法在不同射频功率下制备出的薄膜,其内应力均低于1.0 GPa,薄膜质量密度的变化范围为2.26~2.44 g/cm~3,有望成功制备出内应力低、密度高的高质量DLC薄膜。     

氢气流量对类金刚石薄膜结构与性能的影响

采用直流/射频耦合反应磁控溅射法在Si（100）衬底上成功制备出类金刚石（DLC）薄膜。利用表面轮廓仪、Raman光谱仪、X射线光电子能谱仪表征所制备薄膜在不同氢气流量下的沉积速率和化学结构,讨论了氢气流量对薄膜沉积速率和化学结构的影响;利用纳米压痕技术及曲率弯曲法表征薄膜的力学性能;利用扫描电镜和原子力显微镜表征薄膜的表面形貌与粗糙度。研究表明：随着氢气流量的增加,所制备薄膜的沉积速率逐渐减小,而薄膜中sp³键的含量逐渐增大。当氢气流量为25 mL/min时,薄膜中sp³键的含量为36.3%,薄膜的硬度和体弹性模量分别达到最大值17.5 GPa和137 GPa。同时,所制备薄膜的内应力均低于0.5 GPa,有望成功制备出低内应力的高质量DLC厚膜。随着氢气流量的增加,DLC薄膜的表面变得更致密光滑,且表面均方根粗糙度由5.40 nm降为1.46 nm。     

Effects of Annealing on Luminescence of ZnO Films Deposited on Si Substrates by RF Magnetron Sputtering

Effects of growth ambience, annealing ambience and temperature on the photoluminescence (PL) emission properties of ZnO films deposited on Si (100) substrates by RF magnetron sputtering have been investigated. After annealing, the crystal quality of ZnO films was markedly improved, and the intensity of UV emission peak increased obviously. By varying the flow rate ratio of O2/Ar, annealing atmosphere in oxygen-deficient or oxygen-rich ambience and heating temperature during deposition, the evolution of peak intensities and positions for blue and green emission is formed. This is attributed to the deposition and annealing parameters that control the desorptions and adsorptions of oxygen atoms on the films, and leads to the changes of concentrations of Zinc and oxygen vacancies in the films.     

Effect of O2 in O2/Ar Gas Mixture on Morphological and Optical Properties of TiO2 Thin Films Deposited by DC Cylindrical Magnetron Sputtering

TiO₂ films have been deposited on BK7 substrates by DC cylindrical magnetron sputtering setup in ambient temperature. The samples were fabricated at various O₂/Ar reactive gas mixtures. The effects of changing O₂ amount in O₂/Ar reactive gas mixture on structural, morphological and optical properties of films were studied. The thickness of films was measured by surface profile meter. Thickness of films decreases with increasing the O₂ amount in gas mixture. XRD studies shows that the films are amorphous. Atomic Force Microscopy was used to evaluate and compare the surface roughness and morphologies. The optical properties (transmission and reflection) of the samples were measured by UV–Vis–NIR spectrophotometer. Results show that increasing the O₂ amount in O₂/Ar mixture changes the surface morphologies and optical properties of films. All films exhibit a transmittance higher than 65 % in the visible region. The band gap of films was calculated from the optical measurements. The band gap of TiO₂ thin films increases from 3.471 to 3.526 for different O₂/Ar amounts.     

Phase changes of the ZrO2—12wt%Y2O3 film with Ar^＋ irradiation

1IntroductionYttrisistabilizedzirconiawithahighresistivityandalargerelativedielectricconstant.isaveryattractiveelectricalinsulator.11]Itcanbeusedforthefabricationofsilicon-oninsulator(SOI)structuresorasthebufferlayerinhighToceramicsuperconductorsonSttoavoidthereactionbetweenStandthesuperconductorfilm.[2]Thepolymorphicbehaviourofzirconiabasedceramicscontaininglessthan20wt%Yaosstillaffectsitsthermalshock-resistancewhenitisusedoveralargetemperaturerange.Ithasbeenfoundthatthereseemsacorrelesnon…     

The Effect of Substrate Temperature on the Structure and Morphology of Titanium Nitride Compounds Grown by DC Magnetron Sputtering

The TiN thin films were deposited on p-type silicon (100) substrates using reactive planar DC magnetron sputtering system. The target was 99.99% pure Ti. The reactive sputter gas was a mixture of Ar (99.999%) and N₂ (99.999%) with the ratio Ar (97%) and N₂ (3%) by volume. Structural characterization of the coating was done using X-ray diffraction (XRD). The surface roughness of the coating was determined using an Atomic Force Microscope (AFM). The reflectivity of thin films was investigated by a spectrophotometer system. The X-ray diffraction measurements showed that by increasing the substrate temperature during the growth, change in crystalline structure will occur. The crystallite size of the films determined by Scherrer’s equation, and the crystallite size measured by AFM also increased by increasing the substrate growth temperature. The surface reflectivity measurements indicate that by increasing the substrate growth temperature, the optical properties of the films changes. The change in optical properties and crystalline structure of the films indicate that substrate growth temperature plays an important role in structure and morphology of the grown layers.     

Production and preliminary characterization of DC plasma polymerized allylamine film (PPAA) by NRA, ERD and XPS

Due to its surface properties, especially the presence of amine groups, plasma polymerized allylamine (PPAA) is involved in a large range of applications. Most of them are related to biology and biochemistry. In this work, we demonstrate a quick and simple way to produce PPAA thin films by conventional DC magnetron sputtering. To the best of our knowledge, this is the first method not involving radiofrequency (RF) or microwave discharges. In this paper, we show preliminary characterizations on the produced films (bulk analysis) carried out by ion beam techniques. The Hydrogen content in the whole layers was measured by ERD. The surface composition was probed by XPS on pentafluorobenzaldehyde (PFBA) derivatized films: the maximum concentration of amine groups is 1.6%.     

Physical Properties of Silver Oxide Thin Film Prepared by DC Magnetron Sputtering: Effect of Oxygen Partial Pressure During Growth

In this paper the physical properties of silver oxide thin film have been prepared on BK7 substrate at room temperature by reactive DC magnetron sputtering technique using pure silver metal target by varying oxygen partial pressure during growth at reported. The reactive sputter gas was a mixture of Ar (99.999%) and N₂ (99.999%) with the different ratio Ar and N₂ by volume at the constant pressure of the growth chamber. The X-ray diffraction measurements showed that by increasing O₂ volume during the Growth, change in crystalline structure will occur. The Atomic Force Microscope images shown by increasing O₂ volume, the RMS roughness decreasing consistently. The thickness of the thin films decreases (from 353 to 230 nm) with increasing oxygen partial pressure in chamber. The reflectivity of thin films was investigated with a spectrophotometer system, and the surface reflectivity measurements indicate that by increasing O₂ volume growth, the optical properties of the films changes.     

Effects of composition and structure on gasochromic coloration of tungsten oxide films investigated with XRD and RBS

The effects of composition and structure on gasochromic coloration of tungsten oxide films for hydrogen have been investigated. Tungsten oxide films with various O/W atomic ratios from 1.5 to 3.0 are prepared using a reactive rf magnetron sputtering from a tungsten target at different oxygen partial pressures. The films were deposited on quartz and carbon substrates at 200 °C. The O/W atomic ratio and crystallographic structure of the films were determined by Rutherford backscattering spectroscopy and X-ray diffraction. The gasochromic properties of the films were examined by use of optical transmittance in exposure in 1% H₂/Ar atmosphere. The stoichiometric WO₃ film with amorphous structure resulted in superior gasochromic coloration. The decrease in gasochromic performance was caused by non-stoichiometric WO₃ films with amorphous structure or stoichiometric WO₃ films crystallized with post-annealing at temperatures higher than 300 °C in air. It suggests that the gasochromic coloration of tungsten oxide films for hydrogen is strongly influenced by the composition and structure.     

Microstructure and Mechanical Properties of CrN Films Deposited by Inductively Coupled Plasma Enhanced Radio Frequency Magnetron Sputtering

CrN films have been synthesized on Si（100） wafer by inductively coupled plasma （ICP）-enhanced radio frequency （RF） magnetron sputtering. The effects of ICP power on microstructure, crystal orientation, nanohardness and stress of the CrN films have been investigated. With the increase of ICP power, the current density at substrate increases and the films exhibit denser structure, while the DC self-bias of target and the deposition rate of films decrease. The films change from crystal structure to amorphous structure with the increase of ICP power. The measured nanohardness and the compressive stress of films reach the topmost at ICP power of 150 W and 200 W, respectively. The mechanical properties of films show strong dependence on the crystalline structure and the density influenced by the ICP power.     

Reactive DC Magnetron Sputter Deposited Titanium-Copper-Nitrogen Nano-Composite Thin Films with an Argon/Nitrogen Gas Mixture

A sintered Ti13Cu87 target was sputtered by reactive direct current (DC) magnetron sputtering with a gas mixture of argon/nitrogen for different sputtering powers. Titanium-copper-nitrogen thin films were deposited on Si (111), glass slide and potassium bromide (KBr) substrates. Phase analysis and structural properties of titanium-copper-nitrogen thin films were studied by X-ray diffraction (XRD). The chemical bonding was characterized by Fourier transform infrared (FTIR) spectroscopy. The results from XRD show that the observed phases are nano-crystallite cubic anti rhenium oxide (anti ReO3) structures of titanium doped Cu3N (Ti:Cu3N) and nano-crystallite face centered cubic (fcc) structures of copper. Scanning electron microscopy and energy dispersive X-ray spectroscopy (SEM/EDX) were used to determine the film morphology and atomic titanium/copper ratio, respectively. The films possess continuous and agglomerated structure with an atomic titanium/copper ratio ( 0.07) below that of the original target ( 0.15). The transmittance spectra of the composite films were measured in the range of 360 to 1100 nm. Film thickness, refractive index and extinction coefficient were extracted from the measured transmittance using a reverse engineering method. In the visible range, the higher absorption coefficient of the films prepared at lower sputtering power indicates more nitrification in comparison to those prepared at higher sputtering power. This is consistent with the formation of larger Ti:Cu3N crystallites at lower sputtering power. The deposition rate vs. sputtering power shows an abrupt transition from metallic mode to poisoned mode. A complicated behavior of the films’ resistivity upon sputtering power is shown.     

磁控溅射法制备金/钆柱腔工艺研究

采用直流磁控溅射方法制备金/钆(Au/Gd)多层膜,并研究不同制备参数对多层膜结构与性能的影响。溅射压强高于1Pa时,Au膜与Gd膜的沉积速率均随溅射压强的增大而下降;在较低溅射气压下,随着溅射气压的降低,金膜与钆膜的均方根粗糙度有所减小;随着溅射功率的减小,金/钆多层膜的周期性结构变好,界面更为清晰。本工作制备了不同原子比的金/钆膜柱腔,探讨了有关柱腔成型的解决方法。     

Investigation of conductive and transparent ITO/Ni/ITO multilayer films deposited by a magnetron sputter process

Transparent conducting ITO/Ni/ITO films were deposited by RF magnetron sputtering of Sn-doped In₂O₃ and DC magnetron sputtering of Ni on unheated polycarbonate substrates. Ni interlayers with thicknesses of 5, 10, and 20 nm were used as intermediate metallic layers.Changes in the work function and optical, electrical and structural properties of the films were examined with respect to Ni layer thickness. The work function was measured to be about 4.5 eV and was found to be independent of Ni layer thickness. However, the structural, optical, and electrical properties of the films were influenced by the Ni thickness. As-deposited ITO single layer films showed In₂O₃ diffraction peaks for the (2 2 2) and (4 0 0) planes, while after insertion of the Ni layer between ITO films, these diffraction peaks disappeared. The electrical resistivity decreased with the Ni intermediated film and the optical transmittance also decreased due to increased optical absorption. The figure of merit reached a maximum of 2.0 × 10⁻³ Ω⁻¹ for a 5 nm-thick inserted Ni film, which is greater than the value for as-deposited ITO films.     

不同参数对GDP薄膜的结构与力学性能的影响

采用辉光放电等离子体聚合技术,在不同制备参数条件下,制备了辉光放电聚合物（GDP）薄膜。利用傅里叶变换红外吸收光谱对GDP薄膜的化学结构组成进行了分析,采用纳米压痕技术对GDP薄膜的硬度及杨氏模量进行了表征,探讨了GDP薄膜的化学结构组成、硬度及杨氏模量随制备参数的变化规律。研究表明：随着工作气压和反式二丁烯与氢气（T₂B/H₂）流量比逐渐降低,GDP薄膜中SP³（CH₃）基团随之降低,SP²（CH₂）基团含量和SP³（CH_1,2）随之增加;GDP薄膜的硬度与杨氏模量随着工作气压、T₂B/H₂流量比的降低而逐渐增大。     

溅射功率对磁控溅射制备Bi薄膜结构和性能的影响

采用直流磁控溅射方法在不同功率下制备了铋(Bi)薄膜,对薄膜的沉积速率、表面形貌、生长模式、晶体结构进行了研究,并对其晶粒尺寸和应力的变化规律进行了分析。扫描电镜(SEM)图像显示：薄膜均为柱状生长,平均晶粒尺寸随溅射功率先增大后减小,薄膜的致密度随着功率的增加而降低,在60W时又变得较致密。X射线衍射(XRD)结果表明：Bi薄膜均为多晶斜六方结构,薄膜内应力随功率的增加由张应力变为压应力。     

Recent Developments in Magnetron Sputtering

The principle of magnetron sputtering is introduced andthe balanced and unbalanced magnetrons are compared andthe necessity of unbalanced magnetrons is explained as well. Several recent developments in plasma magnetron sputtering, i.e., unbalanced magnetron sputtering, pulsed magnetron sputtering and ion assisted sputtering, are discussed. The recent developments of unbalanced magnetron systems and their incorporation with ion sources result in an understanding in growingimportance of the magnetron sputtering technology, which makes the technology an applicable deposition process for a variety of important films, such as wear-resistant films and decorative films.     

Hydrogen behavior in gasochromic tungsten oxide films investigated by elastic recoil detection analysis

Changes in the composition and crystalline structure of gasochromic tungsten oxide films resulting from the incorporation of hydrogen were investigated; the oxide films were prepared by reactive RF magnetron sputtering on SiO₂ and glassy carbon substrates simultaneously. X-ray diffraction analysis of the deposited films at 600 °C showed a uniaxial oriented structure in the (0 1 0) plane of monoclinic WO₃ for both substrates. The elastic recoil detection analysis (ERDA) and Rutherford backscattering spectroscopy (RBS) for the films on glassy carbon revealed that the hydrogen impurity was uniformly distributed up to a concentration of 0.24 H/W. The Pd-coated films on SiO₂ turned blue when they were exposed to a mixture of Ar and 5% H₂ gases. When the sample became colored, the hydrogen concentration in the film increased to 0.47 H/W and the crystalline structure of the film changed from monoclinic to tetragonal. These results indicated that the gasochromic coloration of the tungsten oxide films coincided with incorporation of hydrogen atoms into the crystalline lattice, corresponding to the formation of hydrogen tungsten bronze (H_xWO₃).