Growth and characterization of indium doped zinc oxide films sputtered from powder targets

Indium doped Zn O films were grown on quartz glass substrates by radio frequency magnetron sputtering from powder targets. Indium content in the targets varied from 1at% to 9at%. In doping on the structure, optical and electrical properties of Zn O thin films were studied. X-ray diffraction shows that all the films are hexagonal wurtzite with c-axis perpendicular to the substrates. There is a positive strain in the films and it increases with indium content. All the films show a high transmittance of 86% in the visible light region. Undoped Zn O thin film exhibits a high transmittance in the near infrared region. The transmittance of indium doped Zn O thin films decreases sharply in the near infrared region, and a cut-off wavelength can be found. The lowest resistivity of 4.3×10~(-4) Ω·cm and the highest carrier concentration of 1.86×10~(21) cm~(-3) can be obtained from Zn O thin films with an indium content of 5at% in the target.     

Structure, optical, and magnetic properties of Mn-doped ZnO films prepared by sputtering

The microstructural,optical,and magnetic properties and room-temperature photoluminescence(PL) of Mn-doped ZnO thin films were studied.The chemical compositions were examined by energy dispersive X-ray spectroscopy(EDS) and the charge state of Mn ions in the ZnO:Mn films was characterized by X-ray photoelectronic spectrometry(XPS).From the X-ray diffraction(XRD) data of the samples,it can be found that Mn doping does not change the orientation of ZnO thin films.All the films prepared have a wurtzite stru...     

Influence of dopant content on morphology and optical constants of ZnO: Na films by sol-gel method

Undoped and Na-doped ZnO films were deposited by sol-gel method. The effects of sodium incorporation on structure, surface morphology and optical constants of the films were investigated. X-ray diffraction patterns show the hexagonal wurtzite polycrystalline structure and that the sodium incorporation leads to the change in the structural characteristics of ZnO films. The SEM observations show that the surface morphology of the films is affected by the sodium incorporation. The transmission spectra show that the average transmittance of the films is above 85% in the visible range. The absorption edge initially blue-shifts and then red-shifts with the increase of Na doping content. The optical constants of these films were calculated using transmission spectra. Refractive indices of the films in the visible range decrease at first and then increase with increasing Na doping content.     

Al掺杂对ZnO薄膜结构和光学性能的影响

研究了Al掺杂对采用直流磁控溅射方法制备的ZnO薄膜结构及光学性能的影响。X射线衍射结果揭示薄膜具有良好的C轴择优取向生长特性,同时,衬底温度对它们的透射谱和荧光谱有着明显影响,所有薄膜都有大于86%的可见光透过率和陡峭的本征吸收边,但ZAO薄膜的光学透过率略低。Al掺杂导致了更宽的光学带隙,光致发光光谱显示ZnO具有较强的近带本征吸收峰和深能级发射峰,但Al掺杂使得深能级发射峰降低。随着衬底温度的升高,近带边吸收峰蓝移,与光学带隙Eg变化趋势一致。     

Fe掺杂对ZnO薄膜的微结构与光学性质的影响

采用溶胶一凝胶法在石英玻璃衬底上制备了Fe掺杂的ZnO薄膜,研究了不同的Fe掺杂浓度对ZnO薄膜的微结构与光学性质的影响.利用x射线衍射分析了薄膜样品的晶向和晶相.利用原子力显微镜观测了薄膜样品的表面形貌,利用双光束紫外-可见分光光度计分析了znO薄膜样品的光学性质.实验结果表明:所有ZnO薄膜样品都是六角纤锌矿结构,ZnO晶粒沿c轴择优生长.质量分数为1%fe掺入之后,ZnO薄膜的C轴择优取向进一步增强,薄膜的晶化质量也得到进一步提高.当Fe的掺杂浓度高于1%时,ZnO薄膜(002)衍射峰的强度又降低了,这可能是由于Fe2+(x=2或3)和zn2+具有不同的离子半径,大量的Fe2+进入晶格取代Zn2+导致晶格严重畸变,从而影响了znO晶粒的正常生长.所制备的ZnO薄膜在可见光区都具有高的透射丰,由吸收边估算出来的ZnO薄膜的光学带隙表明:随着Fe的掺杂浓度的提高,光学带隙逐渐展宽.     

氧化锌薄膜的阴极电沉积法制备及性能

以硝酸锌溶液为沉积液,采用阴极电沉积技术在ITO导电玻璃基片上制备ZnO薄膜．分析了Zn（NO3）2体系ZnO的电化学沉积机理及反应过程,考察了沉积电位和Zn（NO3）2浓度对沉积过程、薄膜结构及其性能的影响结果表明：沉积电位和Zn（NO3）2浓度对薄膜形貌都有着显著的影响,沉积速率随沉积电位和Zn（NO3）2浓度的增加而增大;当沉积电位和Zn（NO3）2浓度较小时,薄膜粒径小,透光性相对较高．     

Preparation,characterization and electronic properties of fluorine-doped tin oxide films

Tin oxide(SnO_2) and fluorine doped tin oxide(FTO) films were prepared on glass substrates by sol-gel spin-coating using SnCl_4 and NH_4F precursors.Fluorine doping concentration was fixed at 4 at%and 20 at%by controlling precursor sol composition.Films exhibited the tetragonal rutile-type crystal structure regardless of fluorine concentration.Uniform and highly transparent FTO films,with more than 85%of optical transmittance,were obtained by annealing at 600℃.Florine doping of films was verified by analyzing the valence band region obtained by XPS.It was found that the fluorine doping affects the shape of valence band of SnO_2 films.In addition,it was observed that the band gap of SnO_2 is reduced as well as the Fermi level is upward shifted by the effect of fluorine doping.     

溶胶-凝胶法制备氧化锌薄膜

采用了溶胶-凝胶工艺在普通的玻璃载玻片上成功地制备出具有c轴择优取向性、高的可见光透光率、平整均匀的氧化锌薄膜。通过XRD、AFM以及UV光谱仪等分析,其结果表明:所制备的氧化锌薄膜具有纤锌矿型结构,表面均匀致密,薄膜晶粒尺寸大约在40~90 nm,溶胶浓度增大时,其晶粒大小呈增大的趋势。随着涂膜层数的增加,薄膜的(002)方向的取向度增加。薄膜在可见光区的光透过率>85%,在近紫外光波段透射率急剧减小,对应的禁带宽度为3.34 eV。     

Mg质量分数及缓冲层对ZnMgO∶Ga薄膜性能的影响

为了解决氧化锌在柔性电子器件应用方面的问题,利用脉冲激光沉积法(PLD)在聚对苯二甲酸乙二醇酯（PET）柔性衬底上室温下制备镓掺杂氧化锌（ZnO∶Ga）和镓掺杂Zn1-xMgxO (Zn1-xMgxO∶Ga)透明导电薄膜,采用X射线衍射仪（XRD）,扫描电镜,霍尔效应测试仪,紫外-可见光分光光度计对结构和性能进行表征,探讨靶材中镁质量分数对薄膜结构及光电性能的影响,并采用预沉积ZnO无机缓冲层法来改善薄膜样品的性能.研究结果表明,在柔性衬底上通过优化生长参数制备出性能良好的ZnO基透明导电薄膜,通过缓冲层的预沉积可以明显改善薄膜的结构和电学性能,薄膜电阻率最低可至8.27×10^-4 Ω·cm,在可见光区平均透射率超过70%.     

Physical properties of Al-doped ZnO and Ga-doped ZnO thin films prepared by direct current sputtering at room temperature

Al-doped zinc oxide(AZO) and Ga-doped zinc oxide(GZO) thin films with the same doping concentration(3.6 at%) were deposited on glass substrates at room temperature by direct current(DC) magnetron sputtering.Consequently,we comparatively studied the doped thin films on the basis of their structural,morphological,electrical,and optical properties for optoelectronic applications.Both thin films exhibited excellent optical properties with more than 85%transmission in the visible range.The GZO thin film had better crystallinity and smoother surface morphology than the AZO thin film.The conductivity of the GZO thin film was improved compared to that of the AZO thin film:the resistivity decreased from 1.01×10~(-3) to 3.5×10~(-4) Ω cm,which was mostly due to the increase of the carrier concentration from 6.5×10~(20) to 1.46×10~(21)cm~(-3).These results revealed that the GZO thin film had higher quality than the AZO thin film with the same doping concentration for optoelectronic applications.     

Er^＋注入Yb掺杂的ZnO波导膜的光学及结构特性研究

利用射频磁控溅射技术在蓝宝石衬底上沉积ZnO：Yb光波导薄膜,然后用离子注入技术将能量为200keV的Er^＋离子注入薄膜中,剂量为1×10^15ions／cm2。应用棱镜耦合技术、卢瑟福背散射（RBS）技术、X射线衍射（XRD）技术和荧光光谱等技术研究了薄膜的波导性质、基本结构、厚度、组分、Er^＋的射程情况及光学频率上转换性质。实验发现掺杂Yb和Er的薄膜可以形成光波导结构,但波导质量较纯ZnO波导膜差,膜的有效折射率及沉积速率随Yb掺杂量增加有减小趋势;薄膜呈ZnO高度c-轴取向生长,Yb和Er能有效掺杂进ZnO晶格,ZnO晶格常数受Yb掺杂量的不同而变化;在980nm激光激发下没有发现在300-720nm间的光学频率上转换。     

退火条件对ZnO薄膜结构和光学性能的影响

采用溶胶-凝胶法在单晶硅Si(100)衬底上制备了ZnO薄膜,研究了退火温度对ZnO结构和光学性能的影响。实验发现,退火可以明显地改善ZnO薄膜的结构和光学性能。随着退火温度的升高,ZnO薄膜的晶粒增大,同时在室温下观察到明显的紫外发光现象,其紫外PL谱峰值变强,并有红移现象。     

络合剂对ZnO薄膜的结构及其光电性能的影响

在400℃预处理温度下,以醋酸锌为前驱体,分别以乙醇胺、二乙醇胺和三乙醇胺为络合剂,在普通玻璃载玻片上采用溶胶-凝胶技术成功地制备了C轴择优取向的ZnO薄膜.用X射线衍射、紫外-可见吸收光谱、光致发光光谱和平行电极法等技术研究了以不同络合剂制备的ZnO薄膜的结构、缺陷组成及其光电性能.结果表明:络合剂对ZnO薄膜结构的影响很大,不同结构的薄膜,其性能也有很大的差异.其中,以乙醇胺为络合剂制备的ZnO薄膜具有最佳的(002)晶面择优取向,并能减少晶界处载流子的散射,使薄膜具有较高的光电流.     

Characterization of Ti-Cu Films Deposited by HPPMS and Effect on NO Catalytic Release and Platelet Adhesion Behavior

Ti-Cu films with different Cu concentrations were fabricated by high-power pulsed magnetron sputtering(HPPMS) to release copper ions and catalyze NO to improve the blood compatibility. The Cu concentrations of films were 25.7 at% and 68.8 at%. Pure Ti films were also fabricated. Copper release, catalytic release of nitric oxide(NO), and blood platelet adhesion of Ti-Cu films were studied. Ti-Cu films released copper ions in PBS solution and more Cu ions were released from films with 68.8 at% Cu. Ti-Cu films had excellent ability of catalytical decomposition of exogenous donor S-nitroso-N-acetyl-DL-penicillamine(SNAP) and as a result, nitric oxide(NO) was generated. The NO generation catalyzed by Ti-Cu films was significantly higher than that by pure Ti films. This was more eminent in the Ti-Cu films with 68.8 at% Cu. The platelet adhesion and activation of Ti-Cu films were significantly inhibited compared to that of pure Ti films in the presence of SNAP. The Ti-Cu film fabricated by HPPMS showed the ability of releasing Cu ions to catalyze SNAP to generate NO to inhibit platelet adhesion and activation.     

Photoluminescence properties of ZnO thin films prepared by DC magnetron sputtering

ZnO thin films were prepared by direct current（DC） reactive magnetron sputtering under different oxygen partial pressures And then the samples were annealed in vacuum at 450 ℃. The effects of the oxygen partial pressures and the treatment of annealing in vacuum on the photoluminescence and the concentration of six intrinsic defects in ZnO thin films such as oxygen vacancy（Vo）, zinc vacancy（VZn）, antisite oxygen（OZn）, antisite zinc（Zno）, interstitial oxygen（Oi） and interstitial zinc（Zni） were studied. The results show that a green photoluminescence peak at 520 nm can be observed in all the samples, whose intensity increases with increasing oxygen partial pressure; for the sample annealed in vacuum, the intensity of the green peak increases as well. The green photoluminescence peak observed in ZnO may be attributed to zinc vacancy, which probably originates from transitions between electrons in the conduction band and zinc vacancy levels, or from transitions between electrons in zinc vacancy levels and up valence band.     

Comprehensive optimization of electrical and optical properties for ATO films prepared by pulsed laser deposition

Antimony doped tin oxide(ATO) thin films have been prepared by pulsed laser deposition(PLD) method.The intrinsic effect of Sb dopant,including the Sb content,transition degree between Sb~(3+) and Sb~(5+) and crystallinity on the electrical and optical properties of the ATO thin films is mainly investigated.It is suggested that the transition degree of Sb~(3+) towards Sb~(5+)(Sb~(5+)/Sb~(3+) ratio) is determined by Sb content.When the Sb content is increased to 12 at%,the Sb~(5+)/Sb~(3+) ratio reaches the highest value of 2.05,corresponding to the resistivity of 2.70×10~(-3) Ω·cm.Meanwhile,the Burstein-Moss effect caused by the increase of carrier concentration is observed and the band gap of the ATO thin films is broadened to 4.0 eV when the Sb content is increased to 12 at%,corresponding to the highest average optical transmittance of 92%.Comprehensively considering the combination of electrical and optical properties,the ATO thin films deposited with Sb content of 12 at%exhibit the best properties with the highest "figure of merit" of 3.85×10~(-3) Ω~(-1).Finally,an antimony selenide(Sb_2Se_3) heterojunction solar cell prototype with the ATO thin film as the anode has been prepared,and a power conversion efficiency of 0.83%has been achieved.     

沉积温度对ZnO薄膜结构形貌及光学性能的影响

以Zn(NO3)2·6H2O为前驱体,采用超声喷雾热解法在玻璃衬底上沉积了ZnO薄膜,采用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外光谱仪(UVS)等对所得ZnO薄膜进行表征,研究了沉积温度对ZnO薄膜的结构、微观形貌及光学性能的影响。结果表明,沉积温度为500℃时所制备的薄膜质量最佳,形成的是六角纤锌矿ZnO结构,且薄膜沿(002)晶面择优取向生长显著,薄膜表面光滑致密,晶粒细小均匀,尺寸在50~60nm。薄膜表现出良好的光学性能,可见光透过率可达87%。     

Effects of potential and temperature on the electrodeposited porous zinc oxide films

Porous ZnO films were prepared by electrodeposition method in zinc nitrate aqueous solution using ITO glass covered with polystyrene sphere (PS) colloidal crystal arrays as substrates. The preparation procedure includes two parts: deposition of ZnO in the interstices of the colloidal crystals and subsequent removal of the PS templates. The influences of deposition potential and temperature on the ZnO films were investigated. The ordered, uniform porous ZnO films with optical transmittance of approximately 63.6% at 600 nm could be obtained when the deposition potential and temperature were –1.1 V and 70 ℃, respectively. The optical band gap energy increased along with the absolute deposition potential and temperature, ranging from 3.33 to 3.43 eV and from 3.35 to 3.42 eV, respectively.     

Influence of argon gas pressure on the ZnO:Al films deposited on flexible TPT substrates at room temperature by magnetron sputtering

Aluminium doped ZnO thin films(ZnO︰Al) were deposited on transparent polymer substrates at room temperature by rf magnetron sputtering method from a ZnO target with Al2O3 of 2.0 wt%. Argon gas pressure varied from 0.5 Pa to 2.5 Pa with radio frequency power of 120 W. XRD results showed that all the ZnO︰Al films had a polycrystalline hexagonal structure and a (002) preferred orientation with the c-axis perpendicular to the substrate. The grain sizes of the films were 6.3-14.8 nm.SEM images indicated the ZnO︰Al film with low Argon gas pressure was denser and the deposition rate of the films depended strongly on the Argon gas pressure, increasing firstly and then decreasing with increasing the pressure. The highest deposition rate was 5.2 nm/min at 1 Pa. The optical transmittance of the ZnO︰Al films increased and the blue shift of the absorption edge appeared when the Argon gas pressure increased. The highest transmittance of obtained ZnO︰Al films at 2.5 Pa was about 85% in the visible region. The electrical properties of the films were worsened with the increase of the Argon gas power from 1 Pa to 2.5 Pa. The resistivity of obtained film at 1.0 Pa was 2.79×10-2 Ω·cm.     

ZnO：Al透明导电膜制备工艺及其性能的研究

采用溶胶-凝胶法在载波片上制备了Al^3＋掺杂型ZnO薄膜．所用溶胶以乙二醇甲醚为溶剂,醋酸锌为前躯物,乙二醇胺为稳定剂经反应制得;用甩膜法在基片上甩膜,经热处理后在玻璃基片制备出掺铝ZnO薄膜;利用X射线分析仪、分光光度计、四探针测试仪对薄膜的结构和光电特性进行了研究．