CFZ单晶的生产及特点

本文介绍了一种全新的硅单晶生长方法，通过大量实验对ＣＦＺ法生产技术和特点作了描述，并对ＣＦＺ的应用作了讨论。     

自适应滤波的新方法--几何中心法

自适应滤波器的性能曲面具有某些有益的几何特性,根据这些特性,本文提出ＦＩＲ自适应几何中心法（ＦＩＲＡＧＣＭ）,然后通过转化ＩＩＲ滤波器的性能曲面,得到全局收敛的ＩＩＲＡＧＣＭ算法,与梯度法不同的是：ＦＩＲＡＧＣＭ算法无需步长选择,需要的存储量极少,并且收敛迅速,ＵＲＡＧＣＭ继承了ＦＩＲＡＧＣＭ的全部优点,并且大幅度提高了收敛精度,仿真结果表明,两种算法性能相当优越。     

用MoM—CGM—FFT分析二维电磁散射问题

本文提出一种ＭｏＭ－ＣＧＭ－ＦＦＴ（矩量法－共轭梯度法－快速富立叶变换）的混合技术来分析任意截面各非均匀介质柱的散射问题，该方法是以等效电流作为未知函数进行求解，该方法适应性广，是一种求解电磁散射问题的简单途径，由于应用了ＣＧＭ－ＦＦＴ技术，降低了所需计算机内存和ＣＰＵ时间，可以有效地处理电子尺寸的柱体散射和非均匀介质柱的散射，本文给出的数据和准确结果相比比较，吻合好。     

MC3356宽带FSK接收器的一种改进用法

ＭＣ３３５６ 宽带ＦＳＫ 解调接收器适用于多种数据通讯设备中, 可用来传送速率不高于５００ ｋｂｉｔ／ ｓ 的ＦＳＫ 信号。本文介绍了ＭＣ３３５６ 接收器的解调原理,并给出了ＭＣ３３５６ 在实际通信系统中产生本振信号的一种应用。     

舰船电子设备系统结构FMECA技术研究

舰船电子设备进行系统结构方案设计时，首先应考虑系统结构可靠性设计，本文推荐系统结构可靠性分析方法为ＦＭＥＣＡ法，并提出了系统结构ＦＭＥＣＡ分析的实例。     

预条件共轭梯度法在辐射和散射问题的应用

用矩量法求解一些辐射和散射问题,如线天线辐射和线状体散射等问题时,可以产生一个Ｔｏｅｐｌｉｔｚ线性方程组,采用预条件共轭梯度法（ＰＣＧ）与快速富里叶变换（ＦＦＴ）的结合方法（ＰＣＧＦＦＴ）来求解该方程组,其中预条件器采用Ｔ．Ｃｈａｎ的优化循环预条件器。使用ＰＣＧＦＦＴ算法,可有效地节省内存,提高了计算速度。为说明其有效性,将ＰＣＧＦＦＴ算法与ＣＧＦＦＴ算法以及Ｌｅｖｉｎｓｏｎ递推算进行了对比。     

用MoM－CGM－FFT分析二维电磁散射问题

本文提出一种ＭｏＭ－ＣＧＭ－ＦＦＴ（矩量法－共轭梯度法－快速富立叶变换）的混合技术来分析任意截面和非均匀介质柱的做射问题。该方法是以等效电流作为未知函数进行求解。该方法适应世广，是一种求解电磁散射问题的简单途径。由于应用了ＣＧＭ－ＦＦＴ技术，降低了所需计算机内存和ＣＰＵ时间，可以有效地处理电子尺寸的柱体散射和非均匀介质柱的散射，本文给出的数据和准确结果相比较，吻合好。     

用不等接收功率法计算CATV的光路

提出ＣＡＴＶ中ＨＦＣ光纤的不等接收功率法,并给出其计算方法。     

CFDTD法在涂敷金属目标TM散射问题中的应用研究

本文对ＦＤＴＤ方法中的ＣＰ剖分析技术在二维情况下进行了详细的研究，推导出并数值实现了涂静金属导体附近网格点上场量的迭代方程。在二维ＴＭ情况下，对涂敷或半涂敷金属柱体的远区ＲＣＳ及近场分布进行计算，根据计算实例解析结果考查了ＣＦＤＴＤ的计算精度。     

加速器法沉积无氢类金刚石薄膜的性能与结构

本文对用加速器法（ＣＡＤ）在９Ｃｒ１８不锈轴承钢上制备的无氢类金刚石（ＨＦＤＬＣ）样品进行了显微硬度测试、磨擦磨损试验、激光扫描显微镜（ＬＳＭ）观察和透射电镜（ＴＥＭ）分析。试验结果表明用该工艺方法制 的ＨＦＤＬＣ膜具有非晶态显微结构，硬度极高，磨擦贪婪在损性能优异。     

Ionisation and dissociation in CF4

A mass-spectrometric reinvestigation of ionisation and dissociation in CF4 was undertaken to deduce the probable value of the CF3?F bond strength. From studies of the appearance potentials for both positive and negative F and CF3 ions a best value for the bond strength of 143 kcal/mole is deduced. Possible reasons for the abnormal low dielectric strength of CF4 are discussed.     

基于杂波跟踪的CFAR检测研究

通过设立专门通道将图像处理技术应用于雷达检测域杂波功率数据处理,对特征杂波进行跟踪,为恒虚警处理提供背景信息.本文介绍了对抗杂波边缘的自适应CFAR检测器设计中的研究工作,设计了基于杂波跟踪的杂波属性CF(clutter feature)-CFAR检测器和结构元素SE(structuring element)-CFAR检测器,对其检测性能进行了分析.并通过蒙特卡罗(Monte Carlo)仿真方法对上述两种检测器的检测性能进行了仿真.     

基于PocketPC的CF卡驱动程序设计

结合CF(Compact Flash)卡驱动的设计,重点阐述了PocketPC驱动程序的设计方法、CF卡设备的驱动结构和设计原理,介绍了使用实现CF 协议的接口芯片TL16PC564的系统设计,探讨了CF卡的即插即用问题,并且给出了一个CF卡PocketPC驱动及应用程序和驱动交互的实例。     

基于SoC可配置CF/CF+卡控制器的设计

基于最新的CF/CF 3.0协议,设计了一款基于AHB总线的可配置的CF/CF 卡控制器.设计采用了高性能乒乓操作方式的改进异步FIFO.针对CF/CF 卡实际使用时往往只需要其某一两种模式的特点,采用了一种可定制可裁剪CF/CF 控制器电路的设计思路,极大地提高设计效率;探讨了一种基于SoC高性能接口控制器电路通用体系架构,已成功应用到多种接口控制器的设计中.设计通过了仿真(NC-Verilog)、综合(DC)以及FPGA验证,嵌入到单板系统中,实现了与CF存储卡之间的数据传输.     

Throughput-efficient coalition formation of selfish/altruistic nodes in ad hoc networks: a hedonic game approach

In this paper, we analyze the problem of throughput-efficient distributed coalition formation (CF) of selfish/altruistic nodes in ad hoc radio networks. We formulate the problem as a hedonic CF game with non-transferable utility and propose different preference relations (CF rules) based on individual/group rate improvement of distributed nodes. We develop a hedonic CF algorithm, through which distributed nodes may self-organize into stable throughput-efficient disjoint coalitions. We apply the concept of frequency reuse over different coalitions, such that the members of each coalition will transmit over orthogonal sub-bands with the available spectrum being optimally allocated among them. We study the computational complexity and convergence properties of the proposed hedonic CF algorithm under selfish and altruistic preferences, and present means to guarantee Nash-stability. In addition, we identify the scenarios in which a CF process might lead to instability (CF cycle), and we propose methods to avoid cycles and define different exit procedures if a CF cycle is inevitable. Performance analysis shows that the proposed algorithm with optimal bandwidth allocation provides a substantial gain, in terms of average payoff per link, over existing coalition formation algorithms for a wide SNR range.     

CF卡在DM642基便携式数字视频系统中的应用

介绍了CF卡的基本结构、工作原理,在此基础上提出了DM642与CF卡的硬件和软件接口方案,并给出了相应的程序,然后根据存储的数据格式要求实现了对CF卡的内存空间的管理,能方便地对CF卡进行各种读、写操作。     

基于SEP3203的CF卡接口扩展及驱动程序设计

在嵌入式系统的中,通常需要一定的存储空间来存放系统程序、用户程序和其它数据.CF卡是目前使用较为广泛的存储设备,为方便数据交换,有必要在嵌入式系统中扩展CF卡接口.本文首先介绍了CF卡的基本结构、工作模式、内部寄存器和命令.然后基于SEP3203平台,介绍了工作在True IDE模式下CF卡的接口电路设计、基本读写操作流程以及在Fat16文件系统下的驱动程序设计.     

Multitone signals with low crest factor

After an introductory discussion of real-valued and complex signals, it is shown that minimizing the crest factor (CF) of multitone signals is closely related to the construction of complex sequences with low sidelobes in their aperiodic autocorrelation function. Inspired by this observation, a lower bound on the achievable CF is derived. Four differing algorithms for the reduction of the CF of complex multitone signals are compared with each other by computer simulation. The preferred algorithm is presented in detail, and its convergence is proven. Examples of multitone signals with up to 15 tones and lower CF than previously reported in the literature are given     

碳氟等离子体中CF2对SiO2，Si3N4和Si刻蚀的作用

The CF2 density and etch rate of SiO2, Si3N4 and Si are investigated as a function of gas pressure and O2 flow rate in fluorocarbon plasma. As the pressure increases, the self-bias voltage decreases whereas the SiO2 etch rate increases. Previous study has shown that SiO2 etch rate is proportional to the self-bias voltage. This result indicates that other etching parameters contribute to the SiO2 etching. Generally, the CF2 radical is considered as a precursor for fluorocarbon layer formation. At a given power, defluorination of fluorocarbon under high-energy ion bombardment is a main source of fluorine for SiO2 etching. When more CF2 radical in plasma, SiO2 etch rate is increased because more fluorine can be provided. In this case, CF2 is considered as a reactant for SiO2 etching. The etch rate of Si3N4 and Si is mainly determined by the polymer thickness formed on its surface which is dominated by the CF2 density in plasma. Etching results obtained by varying O2 flow rate also support the proposition.     

Role of CF2 in the etching of SiO2, Si3N4 and Si in fluorocarbon plasma

The CF2 density and etch rate of SiO2, Si3N4 and Si are investigated as a function of gas pressure and 02 flow rate in fluorocarbon plasma. As the pressure increases, the self-bias voltage decreases whereas the SiO2 etch rate increases. Previous study has shown that SiO2 etch rate is proportional to the self-bias voltage. This result indicates that other etching parameters contribute to the SiO2 etching. Generally, the CF2 radical is considered as a precursor for fluorocarbon layer formation. At a given power, defluorination of fluorocarbon under high-energy ion bombardment is a main source of fluorine for SiO2 etching. When more CF2 radical in plasma, SiO2 etch rate is increased because more fluorine can be provided. In this case, CF2 is considered as a reactant for SiO2 etching. The etch rate of Si3N4 and Si is mainly determined by the polymer thickness formed on its surface which is dominated by the CF2 density in plasma. Etching results obtained by varying O2 flow rate also support the proposition.