Variation of the lattice parameter and thermal expansion coefficient of (U,Dy)O2 as a function of DyO1.5 content

Thermal expansions of (U,Dy)O₂ solid solutions were investigated between room temperature and 1673 K by using a thermo-mechanical analyzer. The lattice parameter of (U,Dy)O₂ pellets is lower than that of UO₂ and it decreases as Dy content increases. The linear thermal expansion and average thermal expansion coefficients of (U,Dy)O₂ are higher than that of UO₂. For the temperature range from room temperature to 1673 K, the average thermal expansion coefficient values for UO₂ and (U_0.8Dy_0.2)O₂ are 10.97 × 10⁻⁶ and 11.37 × 10⁻⁶ K⁻¹, respectively.     

Electrical properties,sintering and thermal expansion behavior of composite ceramic interconnecting materials,La0.7Ca0.3CrO3−δ/Y0.2Ce0.8O1.9 for SOFCs

This paper presents a high-performance interconnect ceramic for solid oxide fuel cells (SOFCs), based on a modification of La_0.7Ca_0.3CrO_3−δ (LCC). It was found that addition of a small amount of YDC (Y_0.2Ce_0.8O_1.9) into LCC dramatically increased the electrical conductivity. For the best system, LCC + 3 wt.% YDC, the electrical conductivity reached 104.8 S cm⁻¹ at 800 °C in air. The electrical conductivity of the specimen with 2 wt.% YDC in H₂ at 800 °C was 5.9 S cm⁻¹. With the increase of YDC content, the relative density increased, reaching 97.6% when the YDC content was 10 wt.%. The average coefficient of thermal expansion (CTE) at 30–1000 °C in air increased with YDC content, ranging from 11.12 × 10⁻⁶ K⁻¹ to 15.34 × 10⁻⁶ K⁻¹. The oxygen permeation measurement illustrated a negligible oxygen ionic conduction, indicating that it is still an electronically conducting ceramic. Therefore, it is a very promising interconnecting ceramic for SOFCs.     

Thermal expansion of the W5Si3 and T2 phases of the W–Si–B system investigated by high-temperature X-ray diffraction

The coefficients of thermal expansion (CTE) of the W₅Si₃ and T₂ phases of the W–Si–B system were determined using high-temperature X-ray diffraction in the 298–1273 K temperature interval. Alloys with nominal compositions 62.5W37.5Si (at%) and 58W21Si21B (at%) were prepared from high-purity materials through arc melting followed by heat treatment at 2073 K for 12 h under argon atmosphere. The highly different thermal expansion coefficients of W₅Si₃ along the a (5.0 × 10⁻⁶ K⁻¹) and c (16.3 × 10⁻⁶ K⁻¹) axes lead to a high thermal expansion anisotropy (α_c/α_a ≅ 3.3). On the other hand, the T₂-phase exhibits similar thermal expansion coefficients along the a (6.9 × 10⁻⁶ K⁻¹) and c (7.6 × 10⁻⁶ K⁻¹) axes, indicating a behavior close to isotropic (α_c/α_a ≅ 1.1).     

Thermomechanical properties of TiC particle-reinforced tungsten composites for high temperature applications

Tungsten and tungsten alloys are widely used in high temperature environments where arc ablation or mechanical deformation and damage are the main sources of materials failure. For high temperature critical applications in thermomechanical environments, however, the low strength limits the use of tungsten and tungsten alloys. Hence, new tungsten based materials with good high temperature thermomechanical properties need to be developed in order to extend the use of tungsten. TiC particle-reinforced tungsten based composites (TiC_p/W) were fabricated by hot pressing at 2000 °C, 20 MPa in a vacuum of 1.3×10⁻³ Pa. The composites were examined with respect to their thermophysical and mechanical properties at room temperature and at elevated temperature. Vickers hardness and elastic modulus increased with increasing TiC content from 0 to 40 vol.%. The highest flexural strength, 843 MPa, and the highest toughness, 10.1 MPa m^1/2, of the composites at room temperature were all obtained when 20 vol.% TiC particle were added. As the test temperature rose, the flexural strength of the TiC_p/W composites firstly increased and then decreased, except in the monolithic tungsten. The highest strength of 1155 MPa was measured at 1000 °C in the composite containing 30 vol.% TiC particles. The strengthening effect of TiC particles on the tungsten matrix is more significant at high temperatures. With the addition of TiC particles, the thermal conduction of tungsten composites was drastically decreased from 153 W m⁻¹ K⁻¹ for monolithic W to 27.9 W m⁻¹ K⁻¹ for 40 vol.% TiC_p/W composites, and the thermal expansion was also increased. The new composites are successfully used to make high temperature grips and moulds.     

Processing and properties of sintered reaction-bonded silicon nitride with Y2O3–MgSiN2: Effects of Si powder and Li2O addition

The effects of Si powder and Li₂O addition on the processing, thermal conductivity and mechanical properties of sintered reaction-bonded silicon nitride (SRBSN) with Y₂O₃–MgSiN₂ sintering aids were studied. Addition of Li₂O provides a less-viscous liquid phase that results in a more uniform and finer pore structure in RBSN with the coarser Si powders, but the pore structure plays a less important role in the densification of RBSN. The thermal conductivity of SRBSN without porosity decreases with increased Al impurity content and also decreases with the Li₂O addition regardless of the Si purity. The impurest coarse Si powder produces the lowest thermal conductivity (93 W m⁻¹ K⁻¹) but the highest four-point bending strength (∼700 MPa) and a higher fracture toughness (∼10 MPa m^1/2). However, the purer fine Si powder produces the highest thermal conductivity (119 W m⁻¹ K⁻¹) and highest toughness (∼11 MPa m^1/2) but the lowest strength (∼500 MPa).     

Variation of atomic spacing and thermomechanical properties in Ni–Mn–Ga/alumina film composites

Ni_51.4Mn_28.3Ga_20.3 thin films deposited on alumina ceramics have been studied by X-ray powder diffraction and dynamic mechanical analysis. Substantial temperature vs. film thickness dependencies of interatomic spacing measured in the direction of the film normal are observed in the range of 25–200 °C and 0.1–5 μm, respectively. The coefficient of thermal expansion (CTE) of the film in the paramagnetic cubic phase has been determined to be equal to (15 ± 1) × 10⁻⁶ K⁻¹ for all the films, in agreement with the CTE of bulk material. The thickness dependent shrinkage of the pseudo-cubic lattice along the film normal direction is attributed to the thermally induced tensile stress in the film plane. The thickness dependence of the elastic modulus of submicron films is obtained. It is shown that the internal stresses result in both the thickness dependence of martensitic transformation temperature and the reversible, thermally induced change in shape of the Ni–Mn–Ga/alumina cantilever actuator.     

An extremely low thermal conduction ceramic: RE9.33(SiO4)6O2 silicate oxyapatite

Complex rare-earth silicate oxyapatite RE_9.33(SiO₄)₆O₂ (RE = La, Nd, Sm, Gd, Dy) ceramics have been synthesized and their thermal conduction characteristics investigated. When evaluated using a steady-state laser heat-flux technique under conditions ranging from room temperature to 1000 °C the materials demonstrated very low thermal conductivities (0.96–1.49 W m^–1 K^–1), especially Gd_9.33(SiO₄)₆O₂, which shows a value of 1.10–1.14 W m^–1 K^–1 in the measured temperature range. Phonon mean free path and Raman spectra were used to investigate the thermal transfer mechanism. The source of low thermal conductivity was determined to be the strong intrinsic scattering in the crystal cell, which is due to the phonon mean free path being on the inter-atomic level. Furthermore, a connection between the full width at half maximum Raman spectra and the thermal conductivity of RE_9.33(SiO₄)₆O₂ ceramics at room temperature was established. The insensitivity of the thermal conduction properties to temperature for RE_9.33(SiO₄)₆O₂ ceramics have allowed it to show great potential in high temperature thermal insulation applications.     

Thermal expansion behavior of ruthenium aluminides

The thermal expansion behavior of three near-stoichiometric variants of ruthenium aluminide (RuAl) has been investigated. The coefficient of thermal expansion (CTE) varied between 5.5 × 10⁻⁶/K and 11 × 10⁻⁶/K in the temperature range from 400 to 1773 K. The behavior of RuAl is compared to that of other high temperature B2 intermetallics with emphasis on the use of RuAl as a bond coat material within a thermal barrier coating system.     

Enhanced thermoelectric performance of dual-element-filled skutterudites BaxCeyCo4Sb12

Single-phase polycrystalline dual-element-filled skutterudites Ba_xCe_yCo₄Sb₁₂ (0 < x < 0.4, 0 < y < 0.1) are synthesized by the melting–quenching–annealing and spark plasma sintering methods. The electrical conductivity, Seebeck coefficient, thermal conductivity and low-temperature Hall data of these compounds are reported. Our results suggest that there is essentially no difference in electrical transport properties between the dual-element-filled Ba_xCe_yCo₄Sb₁₂ and single-element-filled Ba_yCo₄Sb₁₂ systems. The Ba–Ce co-filling is more effective in lattice thermal conductivity reduction than Ba single filling in the temperature range of 300–850 K. Very low lattice thermal conductivity values less than 2.0 W m^?1 K^?1 are obtained at room temperature. Consequently, enhanced thermoelectric figure of merits (ZT) for these dual-element-filled CoSb₃ skutterudites are achieved at elevated temperatures, in particular ZT = 1.26 at 850 K for Ba_0.18Ce_0.05Co₄Sb_12.02.     

Thermal expansion of the V5Si3 and T2 phases of the V–Si–B system investigated by high-temperature X-ray diffraction

The thermal expansion anisotropy of the V₅Si₃ and T₂-phase of the V–Si–B system were determined by high-temperature X-ray diffraction from 298 to 1273 K. Alloys with nominal compositions V_62.5Si_37.5 (V₅Si₃ phase) and V₆₃Si₁₂B₂₅ (T₂-phase) were prepared from high-purity materials through arc-melting followed by heat-treatment at 1873 K by 24 h, under argon atmosphere. The V₅Si₃ phase exhibits thermal expansion anisotropy equals to 1.3, with thermal expansion coefficients along the a and c-axis equal to 9.3 × 10^?6 K^?1 and 11.7 × 10^?6 K^?1, respectively. Similarly, the thermal expansion anisotropy value of the T₂-phase is 0.9 with thermal expansion coefficients equal to 8.8 × 10^?6 K^?1 and 8.3 × 10^?6 K^?1, along the a and c-axis respectively. Compared to other isostructural silicides of the 5:3 type and the Ti₅Si₃ phase, the V₅Si₃ phase presents lower thermal expansion anisotropy. The T₂-phase present in the V–Si–B system exhibits low thermal expansion anisotropy, as the T₂-phase of the Mo–Si–B, Nb–Si–B and W–Si–B systems.     

Improving thermoelectric properties of n-type bismuth–telluride-based alloys by deformation-induced lattice defects and texture enhancement

Repetitive hot deformation has been demonstrated as a new approach to obtain high-performance n-type bismuth–telluride-based alloys, benefiting from the deformation-induced lattice defects and texture enhancement. X-ray diffraction measurement showed that the oriented textures were greatly enhanced after repetitive hot deformation of the alloys with a quasi-layered crystal structure. The electrical conductivity was remarkably improved by the deformation-induced donor-like defect and texture enhancement, while the Seebeck coefficient remained almost unchanged, and consequently the room temperature power factor was significantly increased from 1.3 W m^?1 K², before hot deformation, to 2.9 W m^?1 K² after four hot deformations. The in-plane lattice thermal conductivity was also largely reduced by the generated high-density lattice defects during the hot-deformation process. The maximum ZT value for the repetitively hot-deformed samples reached 1.0 at 513 K, suggesting that the simple new top-down method is very promising for large-scale production of high-performance bismuth–telluride-based polycrystalline bulk materials.     

Preparation and electrical–magnetic properties of polyaniline doped with ionic ferrocenesulfonic acid

Conducting polyaniline with electrical conductivity of 2.34 × 10⁻¹ S cm⁻¹ was obtained using ferrocenesulfonic acid as dopant. After the ferrocenesulfonic acid was oxidized with FeCl₃, though the electrical conductivity of the doped polyaniline decreased by 1–2 orders of magnitude, the magnetic susceptibility (χ) increased with the increase of the oxidation degree of ferrocenesulfonic acid. EPR spectra showed not only a signal with a g value of around 2, but also a so-called half-field signal with a g value of about 4 even at room temperature. Coexistence of ferromagnetic intrachain interactions and antiferromagnetic interchain interactions in the materials has been suggested.     

Reinforcement architectures and thermal fatigue in diamond particle-reinforced aluminum

Aluminum reinforced by 60 vol.% diamond particles has been investigated as a potential heat sink material for high power electronics. Diamond (CD) is used as reinforcement contributing its high thermal conductivity (TC ≈ 1000 W mK^?1) and low coefficient thermal expansion (CTE ≈ 1 ppm K^?1). An Al matrix enables shaping and joining of the composite components. Interface bonding is improved by limited carbide formation induced by heat treatment and even more by SiC coating of diamond particles. An AlSi7 matrix forms an interpenetrating composite three-dimensional (3D) network of diamond particles linked by Si bridges percolated by a ductile α-Al matrix. Internal stresses are generated during temperature changes due to the CTE mismatch of the constituents. The stress evolution was determined in situ by neutron diffraction during thermal cycling between room temperature and 350 °C (soldering temperature). Tensile stresses build up in the Al/CD composites: during cooling <100 MPa in a pure Al matrix, but around 200 MPa in the Al in an AlSi7 matrix. Compressive stresses build up in Al during heating of the composite. The stress evolution causes changes in the void volume fraction and interface debonding by visco-plastic deformation of the Al matrix. Thermal fatigue damage has been revealed by high resolution synchrotron tomography. An interconnected diamond–Si 3D network formed with an AlSi7 matrix promises higher stability with respect to cycling temperature exposure.     

Thermoelectric properties of Sb-doped Mg2Si semiconductors

The thermoelectric properties of Sb-doped Mg₂Si (Mg₂Si:Sb = 1:x(0.001 ≦ x ≦ 0.02)) fabricated by spark plasma sintering have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) between 300 and 900 K. Sb-doped Mg₂Si samples are n-type in the measured temperature range. The electron concentration of Sb-doped Mg₂Si at 300 K ranges from 2.2 × 10¹⁹ for the Sb concentration, where x = 0.001, to 1.5 × 10²⁰ cm⁻³ for x = 0.02. First-principles calculation revealed that Sb atoms are expected to be primarily located at the Si sites in Mg₂Si. The electrical resistivity, Seebeck coefficient, and thermal conductivity are strongly affected by the Sb concentration. The sample x = 0.02 shows a maximum value of the figure of merit ZT, which is 0.56 at 862 K.     

The calculation of electronic properties of an Ag/chitosan/n-Si Schottky barrier diode

In this study, the film of chitosan by adding the solution of chitosan being a polymeric compound on the top of an n-Si substrate and then by evaporating solvent was formed. It was seen that the chitosan/n-Si contact demonstrated clearly rectifying behavior and the reverse curves exhibit a weak bias voltage dependence by the current–voltage (I–V) curves studied at room temperature. Average barrier height and ideality factor values for this structure were determined as 0.94 eV and 1.81, respectively. Furthermore, the energy distribution of the interface state density located in the semiconductor band gap at the chitosan/n-Si substrate in the energy range (E_c−0.785) to (E_c−0.522) eV have been determined from the I–V characteristics. The interface state density N_ss ranges from 5.39 × 10¹² cm⁻² eV⁻¹ in (E_c−0.785) eV to 1.52 × 10¹³ cm⁻² eV⁻¹ in (E_c−0.522) eV. The interface state density has an exponential rise with bias from the midgap towards the bottom of the conduction band.     

Thermal properties of MoSi2 with minor aluminum substitutions

Mo(Si_1−xAl_x)₂ compositions (x = 0–0.1) have been prepared by a modified SHS route under uniaxial hydrostatic pressure. Oxidation studies carried out by thermal analysis and sheet resistivity indicate an improvement in the low temperature (700–900 K) oxidation resistance with increasing aluminum addition. Dilatometric results show a decrease in the α value up to x = 0.05 substitution. With the aluminum substitution, both thermal expansion coefficient and thermal conductivity show decrease in their values except in the biphasic region. The x = 0.05 composition containing both C11_b and C40 phases is a promising material for high temperature thermal barrier coating as it shows higher oxidation resistance and a similar K/α value as compared to pure MoSi₂.     

Processing and characterization of sintered reaction bonded Si3N4 ceramics

The present contribution reports the influence of nitridation and sintering conditions on the densification, microstructure, mechanical and thermal conductivity properties of sintered reaction bonded Si₃N₄ (SRBSN) mixed with 3.5% Y₂O₃-1.5% MgO. The nitridation of samples was carried out at 1450 and 1500 °C for different time schedules (2.5, 8 and 16 h) in order to increase β Si₃N₄ phase and subsequently sintering was performed at various temperatures (1850, 1900 and 1950 °C) for 10 h to enhance densification and properties of SRBSN ceramics. It was observed that the density of the samples slightly decreased and β Si₃N₄ phase significantly increased to 87% with increasing nitridation temperature and time. The density of gas pressure sintered (GPS) samples increased with increasing sintering temperature, almost full density was measured for all the samples at the respective sintering temperature (except those samples which were given nitridation at 1500 °C for 16 h). The microstructure of SRBSN samples were characterized by bimodal microstructure with equiaxed and rod like elongated grains and average grain size of SRBSN samples varied between 1.62 and 2.43 μm and aspect ratio of grains varied from 3.78 to 6.88 with varying the sintering temperature. Depending on the sintering density and microstructure, the SRBSN samples exhibited hardness (16.69 to 19.47 GPa), fracture toughness (7.02 to 9.20 MPa·m^1/2) and thermal conductivity (77.32 to 98.52 W/m·K). The coarsening of grain size and aspect ratio negatively affected hardness and fracture toughness, on the contrary the thermal conductivity increased. Among all samples, the SRBSN (which was subjected to nitridation at 1500 °C for 16 h; GPS at 1950 °C for 10 h) measured with good combination of hardness: 17.32 GPa, fracture toughness: 8.36 MPa·m^1/2and thermal conductivity: 98.52 W/m·K.     

Viscous flow behavior and thermal properties of bulk amorphous Mg58Cu31Y11 alloy

The viscous flow behavior of the Mg₅₈Cu₃₁Y₁₁ bulk amorphous rods in the supercooled viscous region is investigated using differential scanning calorimetry (DSC) and thermomechanical analyzer (TMA). Below the glass transition temperature, T_g, a linear thermal expansion coefficient of 3 ± 1 × 10⁻⁶ m/m K was obtained. In contrast, significant viscous deformation occurred as a result of a compressive load above T_g. The onset, steady state, and finish temperatures for viscous flow, determined by TMA, are slightly different from the glass transition and crystallization temperatures measured by DSC. The appropriate working temperature for microforming as determined by the steady state viscous flow temperature is about 460–474 K. The effective viscosity within this temperature range is estimated to be about 10⁷–10⁹ Pa s, and it increases with increasing applied stress. The onset, steady state, and finish temperatures all decrease with increasing applied stress, suggesting accelerated crystallization in the present Mg₅₈Cu₃₁Y₁₁ under stress.     

Electrical properties of 1,4-bis[2-(3,4,5-trimethoxyphenyl)ethenyl] benzene

The increase of the electrical conductivity of the arylenevinylene (AV) system 1,4-bis[2-(3,4,5-trimethoxyphenyl)ethenyl] benzene was measured as a function of the doping level of iodine. Compressed powders and films blended with polystyrene (PS) containing up to 30 wt.% of the oligomer were used. At the highest doping level the conductivity of the compressed powder reaches a value of 3.3×10⁻⁴ Ω⁻¹ cm⁻¹. The conductivity, measured between 90 and 300 K on the powder with the highest conductivity, is thermally activated with an activation energy of ∼0.1 eV. The thermopower is positive in agreement with a charge transfer from the organic chain to an iodine atom. Its value is small (25 μV K⁻¹) and temperature independent. The results are interpreted in terms of small-polaron hopping.