Graphene-enhanced microwave absorption properties of Fe3O4/SiO2 nanorods

Fe₃O₄/SiO₂/graphene composite composed of Fe₃O₄/SiO₂ core–shell nanorods and graphene nanosheets were synthesized by a facile wet chemical method. Structure and morphology studies reveal that the Fe₃O₄/SiO₂ nanorods with porous structure and large aspect ratio are densely wrapped by the graphene nanosheets. By changing the graphene content, the electromagnetic properties of the Fe₃O₄/SiO₂/graphene composite can be well tuned. When the weight ratio of Fe₃O₄/SiO₂ to graphene reaches an appropriate value, excellent microwave absorption performance is achieved due to the large electromagnetic losses and good impedance matching. The Fe₃O₄/SiO₂/graphene composite with graphene content of 5 wt.% shows the minimum reflection loss of −27.1 dB at 12.2 GHz when the coating layer thickness is only 1.5 mm.     

Double-layer microwave absorber based on nanocrystalline Zn0.5Ni0.5Fe2O4/α-Fe microfibers

The microwave absorption properties of the nanocrystalline NiZn ferrite (Zn_0.5Ni_0.5Fe₂O₄) and iron (α-Fe) microfibers with single-layer and double-layer structures were investigated in the frequency range of 2–18 GHz. The double-layer absorbers have much better microwave absorption properties than the single-layer absorbers, and the microwave absorption properties of the double-layer structure are influenced by the coupling interactions between the absorbing layer and matching layer. With the absorbing layer thickness 0.7 mm of α-Fe microfibers–wax composite and the matching layer thickness 1.5 mm of Zn_0.5Ni_0.5Fe₂O₄ microfibers–wax composite, the minimum reflection loss (RL) reaches about −71 dB at 16.2 GHz and the absorption band width is about 9.2 GHz ranging from 8.8 to 18 GHz with the RL value exceeding −10 dB. While, when the absorbing layer is the Zn_0.5Ni_0.5Fe₂O₄ microfibers–wax composite with thickness 1.8 mm and the matching layer is the α-Fe microfibers–wax composite with thickness 0.2 mm, the RL value achieves the minimum about −73 dB at 13.8 GHz and the absorption band width is about 10.2 GHz ranging from 7.8 to 18 GHz with the RL value exceeding −10 dB, which covers the whole X-band (8.2–12.4 GHz) and K_u-band (12.4–18 GHz).     

Preparation and microwave absorption of porous hollow ZnO by CO2 soft-template

The porous hollow ZnO samples were prepared by calcination of ZnCO₃ precursor at 450 °C. The structural properties were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), thermogravimetric analysis and differential thermal analysis (TG-DTA). A possible mechanism for the formation of porous hollow microstructure was proposed. The microwave absorption properties of the porous hollow structural ZnO have been investigated. The reflection loss (RL) of the ZnO was calculated based on the relative complex permeability and permittivity. A minimum reflection loss of the wax-composite with 25 wt% porous hollow ZnO is −36.3 dB at 12.8 GHz with a thickness of 4.0 mm. The results indicate that porous hollow structural ZnO can be used as a desirable material for the microwave absorption.     

Microwave characteristics of SiC artificial crystal

Design and simulation of a new type of stealthy material are presented, including theory, methodology, and results/discussion. This material consists of a three-dimensional periodic lattice of SiC ceramic dielectric rods with SiO₂ as matrix. Transmission, reflection and absorption coefficients of the material are calculated. Proper parameters which meet the stealthy requirements are obtained from the numerical calculation. It's found that when conductivity is equal to 1 × 10^0.4 Sm⁻¹, the maximum absorption loss is got at 6 GHz. The main advantages of this material are light-weight, high temperature stability, and high impedance matching the free space.     

Carbon nanotubes doped SiO2/SiO2–PbO double layer high emissivity coating

Carbon nanotubes (CNTs) doped SiO₂/SiO₂–PbO double layer coating is prepared on Ni alloy plate by hybrid SiO₂ sol-gel method and SiO₂–PbO powders with certain heat treatment. The SiO₂–PbO top layer is observed to possess a kind of porous and skeleton-like structure. The emissivity enhancement mechanisms of the coating's structure and doping carbon nanotubes are investigated in this study. Spectral emissivity measurements from 1.28 to 25 μm at 570 and 820 K show that the carbon nanotubes doped SiO₂/SiO₂–PbO double layer coating possesses strong blackbody character and the coating's emissivity can reach as high as 0.94 at 820 K.     

Structural,magnetic and microwave absorption characteristics of BaCoxMnxTi2xFe12 − 4xO19

The effect of Mn⁺²Co⁺²Ti⁺⁴ substitution on microwave absorption has been studied for BaCo_xMn_xTi_2xFe_12 ? 4xO₁₉ ferrite–acrylic resin composites, where x varies from 0.3 to 0.5 in steps of 0.1, in frequency range from 12 to 20 GHz. X-ray diffraction (XRD), scanning electron microscope (SEM), vibrating sample magnetometer, and vector network analyzer were used to analyze the structures, electromagnetic and microwave absorption properties. The results showed that, the magnetoplumbite structures for all samples have been formed. Based on microwave measurement on reflectivity, BaCo_xMn_xTi_2xFe_12 ? 4xO₁₉ may be a good candidate for electromagnetic compatibility and other practical applications at high frequency.     

Microwave absorbing behavior of metal dispersed TiO2 nanocomposites

Metal dispersed TiO₂ nanocomposites were prepared by milling process. The microwave absorbing characteristics of the prepared nanocomposites with epoxy were studied in the 8.2–12.4 GHz frequency range for the microwave absorption application. The measured relative complex permittivity of metal dispersed nanocomposite-epoxy indicates higher values in comparison to the pure TiO₂-epoxy nanocomposite. The Reflection loss (RL) values were calculated for thickness from 0.1 to 2.2 mm with an interval of 0.1 mm and the maximum value of RL found for TiO₂-epoxy nanocomposite was −4.96 dB at 10.21 GHz frequency for 2.0 mm thickness. Whereas, RL value is improved to a maximum value of −13.67 dB at 10.13 GHz with Al dispersion (1.8 mm thickness) and −7.24 dB at 10.38 GHz with Ni dispersion (1.3 mm thickness). This study suggests the effectiveness metal particles dispersion for the development of thin microwave absorbers as well as increasing the level of RL.     

Synthesis and characterization of Co/SiO2 as catalyst catalyze hydrogen generation

Novel composites of porous SiO₂-LP and SiO₂-HP supports are synthesized by the silica–polyethylene glycol monooleyl ether surfactant self-assembly method to obtain a large surface area. Cobalt is immobilized in the supports by incipient wetness impregnation. A stable and active Co/SiO₂ catalyst is examined using FE-SEM, BET and XRD. Further, the catalyst is tested for catalytic hydrolysis of alkaline sodium borohydride (NaBH₄) solution: the rate of hydrogen generation is found to increase with increasing cobalt loading of the Co/SiO₂ catalyst. The hydrogen generation rates increase dramatically when the temperature is increased from 17 to 40 °C. The highest hydrogen generation rates of Co/SiO₂ catalyst are obtained at 2513 mL min^? 1 g^? 1 in 20 mL of 5 wt.% NaBH₄ solution containing 5 wt.% NaOH at 40 °C.     

Enhanced thermal transfer and bending strength of SiC/Al composite with controlled interfacial reaction

The interface and its effect on the thermal conductivity and bending strength of SiC/Al composite were investigated. The results indicated that the compact interfacial layer could be obtained when holding the SiC particles for 4 h at 1200 °C. The decrease of the holding time reduced the thickness of the interfacial layer, yet harmful for the thermal transfer of the interface due to the formation of pores and Al₄C₃. The prolongation of the holding time introduced SiO₂ layer owning the very low instinct thermal conductivity, resulting in the increase of interfacial thermal resistance. However, the addition of SiO₂ layer seems less harmful for the interfacial thermal transfer with respect to the thin SiO₂ layer. The critical thickness of SiO₂ layer is confirmed to be 210 nm. Very similar to the variation of thermal conductivity, the bending strength follows a first increase until reaches a maximum value 435 MPa and then trends to decrease. The composite after T6 treatment exhibits a better bending strength compares to T2 treated composite.     

Interfacial SiC formation in polysiloxane-derived Si–O–C ceramics

Poly(methylsilsesquioxane) (CH₃SiO_1.5)_n (PMS) loaded with 40 vol.% Si-filler powder was pyrolyzed in inert atmosphere up to 1400 °C to fabricate Si–O–C composite ceramics. The evolution of the interface microstructure between the filler and the matrix was studied by high resolution electron microscopy (HREM), energy-dispersive X-ray spectroscopy and electron energy loss spectroscopy. While below pyrolysis temperatures of 1000 °C no filler reaction was observed (inert filler regime), a porous interface layer of nanosized ß-SiC was formed at reaction temperatures above 1200 °C. Due to a high fraction of open porosity of 13% (1000 °C) to 19% (1400 °C) in the polymer-derived Si–O–C matrix, gas-phase transport and reaction processes involving CO and SiO as the dominant species are likely to occur at the interface boundary layer.     

Electromagnetic and microwave absorption performance of some transition metal doped La0.7Sr0.3Mn1−xTMxO3±δ (TM = Fe,Co or Ni)

In this study the transition metal doped La_0.7Sr_0.3Mn_1?xTM_xO_3±δ (TM = Fe, Co or Ni, x = 0, 0.2) powders were fabricated by the conventional solid state reaction method. The compositions, morphologies and crystal structures were characterized using different method. The influences of the incorporation of TM into La_0.7Sr_0.3MnO_3±δ on the complex permittivity, complex permeability and microwave absorption performance were investigated in the range of 5.85–18 GHz. It is found that the electromagnetic loss has been enhanced after TM doping. And the microwave absorption properties have been significantly improved. In present study La_0.7Sr_0.3Mn_0.8Fe_0.2O_3±δ had the best microwave absorption properties. The maximum reflection loss was 27.67 dB at 10.97 GHz, and the absorbing bandwidth above 6 dB was 6.80 GHz with 2 mm thickness.     

Nanocrystalline ruthenium oxide of fine mesoporosity prepared by templating for electrochemical capacitor applications

Hydrous ruthenium-oxide (RuO_xH_y) particles composed of nanocrystallites of ～5 nm in size were prepared, using hexagonal self-ordered mesoporous SiO₂ (SBA-15) as a template and RuCl₃ as the ruthenium precursor. The material has a highly mesoporous structure with a sharp distribution of fine pores of size around 3–4 nm. A high specific capacitance of 954 F g^?1 for the RuO_xH_y in 1 M H₂SO₄(aq) and a high energy density of 118.9 J g^?1 (or 32.7 W h kg^?1) were obtained from an electrochemical capacitor made with the material. Rectangular shape of the cyclic voltammetry was observed even increasing the scan rate to about 100 mV s^?1.     

High-speed deposition of dense,dendritic and porous SiO2 films by Nd: YAG laser chemical vapor deposition

Dense, dendritic and porous SiO₂ films were prepared by laser chemical vapor deposition (LCVD) using a high-power continuous-wave mode Nd: YAG laser (206 W) and a TEOS (tetraethyl orthosilicate) precursor. The effects of laser power (P_L) and total chamber pressure (P_tot) on the microstructure and deposition rate (R_dep) were investigated. Amorphous SiO₂ films were obtained independent of P_L and P_tot. Flame formation was observed between the nozzle and the substrate at P_L > 160 W and P_tot > 15 kPa. At P_L = 206 W, dense, dendritic and porous SiO₂ films were obtained at P_tot < 20 kPa, P_tot = 23 kPa and P_tot > 25 kPa, respectively. The R_dep increased thousands of times under flame formation conditions, the highest R_dep being reached at 1200 μm h^?1, 22,000 μm h^?1 and 28,000 μm h^?1 for the dense, dendritic and porous SiO₂ films, respectively.     

Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO₂/50 nm-thick HfO₂ dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO₂/HfO₂ showed a higher capacitance of 35 nF/cm² and a lower leakage current density of 4.6 nA/cm² than 200 nm-thick SiO₂. The obtained saturation mobility (μ_sat), threshold voltage (V_th), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm² V^?1 s^?1, 0.88 V, and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.     

Properties of Co0.5Ni0.5Fe2O4/carbon nanotubes/polyimide nanocomposites for microwave absorption

High-temperature microwave absorbing materials are of great interest due to their ability to withstand high temperatures. Multi-walled carbon nanotubes (MWNTs) were surface modified by Ar plasma and Co_0.5Ni_0.5Fe₂O₄ nanoparticles were doped onto the surface of the MWNTs by a chemical co-precipitation method. Co_0.5Ni_0.5Fe₂O₄/MWNTs powders were then added to polyimide to prepare nanocomposites for microwave absorption. After plasma modification, the surface of the MWNTs produced carboxyl groups, which are beneficial for interfacial bonding between the MWNTs and PI. The glass transition temperature of the nanocomposites was 261 °C and their thermostability was preserved up to 500 °C. The maximum reflection loss (RL) value of nanocomposites containing 0.75 wt% modified MWNTs was ?24.37 dB and the frequency range where the RL value was less than ?10 dB was 5.1 GHz from 7.8 to 12.9 GHz.     

Self-reducing coal-derived carbon/Ni3Fe magnetic composites with frequency-dependent microwave absorption performance

Coal-derived carbon/Ni₃Fe magnetic composites with frequency dependent microwave absorption performance were prepared at low temperatures (750–850 °C) using coal as the carbon source. The Ni₃Fe alloy was successfully formed due to the carbothermal reaction and reducing gas. SEM images indicate the surface becomes rougher and the number of interlayer of the composites increases with increasing reaction temperature. Consistently, high degree of graphitization of the coal-derived carbon was confirmed by using Raman spectroscopy. Specifically, coal-derived carbon/Ni₃Fe magnetic composites exhibit frequency-dependent microwave absorption characteristics at 2–18 GHz, that is, as the reaction temperature rises from 750 °C to 850 °C, the minimum reflection loss gradually shifts to low frequencies. Among them, CC/Ni₃Fe_(8 0 0)-0.4 exhibits a minimum reflection loss of ?60.76 dB at 16.64 GHz, while the thickness is only 1.28 mm. Such a clean strategy provides experience for the environmental application of coal and microwave absorption. Meanwhile, a lightweight, stable and efficient microwave absorber has been developed.     

Low-firing of BiSbO4 microwave dielectric ceramic with V2O5–CuO addition

Effects of 1.0 wt.% V₂O₅–CuO mixture addition on the sintering behavior, phase composition and microwave dielectric properties of BiSbO₄ ceramics have been investigated. BiSbO₄ ceramics can be well densified below temperature about 930 °C with 1.0 wt.% V₂O₅–CuO mixtures addition with different ratios of CuO to V₂O₅. The formation of BiVO₄ phase and substitution of Cu²⁺ can explain the decrease of sintering temperature. Dense BiSbO₄ ceramics sintered at 930 °C for 2 h exhibited good microwave dielectric properties with permittivity between 19 and 20.5, Qf values between 19,000 and 40,000 GHz and temperature coefficient of resonant frequency shifting between ?71.5 ppm °C^?1 and ?77.8 ppm °C^?1. BiSbO₄ ceramics could be a candidate for microwave application and low temperature co-fired ceramics technology.     

Brazing of SiO2f/SiO2 composite modified with few-layer graphene and Invar using AgCuTi alloy

Due to the poor wettability of the AgCuTi alloy on the SiO_2f/SiO₂ composite, direct brazing of the composite with an Invar alloy could hardly achieve a reliable joint. To overcome that, the SiO_2f/SiO₂ composite was decorated with few-layer graphene (FLG) by a plasma enhanced chemical vapor deposition (PECVD) method. Sessile drop experiments indicate that the contact angle dropped from 123.8° to 50.7° after FLG was grown on the surface of the SiO_2f/SiO₂ composite. Afterwards, the effects of brazing temperature and Ti contents on the microstructure evolution and mechanical properties of joints (Invar/SiO_2f–SiO₂ modified with FLG) were investigated. The typical interface structure of the joint is SiO_2f–SiO₂/Ti₅Si₃ + TiO₂ + Cu_xTi_6 − xO(x = 2,3)/Ag(s,s) + Cu(s,s) + Cu–Ti blocks/wave-like Fe₂Ti + Ni₃Ti/Ag(s,s) + Cu(s,s) + Fe₂Ti + Ni₃Ti blocks/Invar. As the brazing temperature and Ti contents increase, the reaction layer on the SiO_2f/SiO₂ side becomes thicker and cracks gradually propagate. Meanwhile, a few dispersive Fe₂Ti + Ni₃Ti phases change into large-area wave-like compounds and more Cu–Ti compounds form with the increase of the Ti content. The microstructure evolution significantly affects the shear strength of the brazed joints. The highest shear strength is 26 MPa brazed at 860 °C for 10 min with 4.5 wt.% Ti content.     

Porous structure to improve microwave absorption properties of lamellar ZnO

The novel porous ZnO nanoflakes were fabricated by a facile two-step method containing preparation of precursor ZnCO₃ and subsequently calcination of ZnCO₃. The as-prepared products were analyzed by X-ray diffraction, scanning electron microscopy, and thermalgravimetric analysis. The results reveal that the porous ZnO nanoflakes were in the diameter and thickness of several to tens micrometers and 100–500 nm, respectively. The microwave absorption properties of porous ZnO nanoflakes were investigated by the network analyzer, which exhibit the minimal reflection loss of ?34.5 dB at 10.7 GHz with only thickness of 1.5 mm. The effective absorption (below ?10 dB) bandwidth can be tuned between 7.0 GHz and 17.1 GHz by tuning absorber thickness of 1.0–2.2 mm. Thus, the porous lamellar ZnO could be used as a promising absorbing material with the features of high efficiency absorption, wide-band and light weight.     

Effects of CaF2 addition on sintering behavior and microwave dielectric properties of ZnTa2O6 ceramics

Microwave dielectric ceramics ZnTa₂O₆ were prepared by conventional mixed oxide route. The effects of CaF₂ addition on the microstructures and microwave dielectric properties of ZnTa₂O₆ ceramics were investigated. Formation of second phase can be detected at the high addition of CaF₂ (0.5–1.0 wt.%). Variation of grain shapes were observed with CaF₂ content increasing. The sintering temperature of CaF₂-doped ZnTa₂O₆ ceramics can be effectively lowered from 1400 °C to 1225 °C due to liquid phase effect. The microwave dielectric properties were affected by the amount of CaF₂ addition. At 1225 °C for 4 h, ZnTa₂O₆ ceramics with 0.25 wt.% CaF₂ possesses excellent microwave dielectric properties: ε_r = 31.32, Q × ? = 73600 GHz(6.8 GHz) and τ_? = ? 6.97 ppm/°C.